公开(公告)号：US09443981B2

公开(公告)日：2016-09-13

申请号：US14942376

申请日：2015-11-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshikazu Kondo ,  Hideyuki Kishida

IPC: H01L29/00 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/45 ,  H01L29/24 ,  H01L29/49 ,  H01L21/477 ,  H01L21/02

CPC classification number: H01L27/1225 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02614 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/477 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1259 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/45 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78663 ,  H01L29/78678 ,  H01L29/7869 ,  H01L29/78693

Abstract: In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.

公开(公告)号：US09209283B2

公开(公告)日：2015-12-08

申请号：US14626150

申请日：2015-02-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshikazu Kondo ,  Hideyuki Kishida

IPC: H01L29/00 ,  H01L29/66 ,  H01L27/12 ,  H01L29/45 ,  H01L29/786 ,  H01L29/24 ,  H01L29/49 ,  H01L21/477 ,  H01L21/02

CPC classification number: H01L27/1225 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02614 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/477 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1259 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/45 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78663 ,  H01L29/78678 ,  H01L29/7869 ,  H01L29/78693

Abstract: In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.

Abstract translation: 在薄膜晶体管中，防止阈值电压的关断电流的增加或负偏移。 在薄膜晶体管中，在氧化物半导体层与源极电极层和漏极电极层之间设置有缓冲层。 缓冲层包括在氧化物半导体层的中间部分上的绝缘体或半导体的金属氧化物层。 金属氧化物层用作抑制杂质掺入到氧化物半导体层中的保护层。 因此，在薄膜晶体管中，可以防止阈值电压的关断电流的增加或负偏移。

公开(公告)号：US08860023B2

公开(公告)日：2014-10-14

申请号：US13870399

申请日：2013-04-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi Tsubuku ,  Yusuke Nonaka ,  Noritaka Ishihara ,  Masashi Oota ,  Hideyuki Kishida

IPC: H01L29/786 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L21/477 ,  H01L29/045 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78696

Abstract: Reducing hydrogen concentration in a channel formation region of an oxide semiconductor is important in stabilizing threshold voltage of a transistor including an oxide semiconductor and improving reliability. Hence, hydrogen is attracted from the oxide semiconductor and trapped in a region of an insulating film which overlaps with a source region and a drain region of the oxide semiconductor. Impurities such as argon, nitrogen, carbon, phosphorus, or boron are added to the region of the insulating film which overlaps with the source region and the drain region of the oxide semiconductor, thereby generating a defect. Hydrogen in the oxide semiconductor is attracted to the defect in the insulating film. The defect in the insulating film is stabilized by the presence of hydrogen.

Abstract translation: 降低氧化物半导体的沟道形成区域中的氢浓度对于稳定包括氧化物半导体的晶体管的阈值电压和提高可靠性是重要的。 因此，氢被氧化物半导体吸引并被捕获在与氧化物半导体的源极区域和漏极区域重叠的绝缘膜的区域中。 杂质如氩，氮，碳，磷或硼添加到与氧化物半导体的源极区和漏极区重叠的绝缘膜的区域中，从而产生缺陷。 氧化物半导体中的氢被吸引到绝缘膜中的缺陷。 通过氢气的存在使绝缘膜中的缺陷稳定。

公开(公告)号：US20130113044A1

公开(公告)日：2013-05-09

申请号：US13729322

申请日：2012-12-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Akiharu Miyanaga ,  Yasuo Nakamura ,  Junpei Sugao ,  Hideki Uochi

IPC: H01L29/786

CPC classification number: H01L29/78669 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1288 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78678 ,  H01L29/7869

Abstract: It is an object to provide a semiconductor device typified by a display device having a favorable display quality, in which parasitic resistance generated in a connection portion between a semiconductor layer and an electrode is suppressed and an adverse effect such as voltage drop, a defect in signal wiring to a pixel, a defect in grayscale, and the like due to wiring resistance are prevented. In order to achieve the above object, a semiconductor device according to the present invention may have a structure where a wiring with low resistance is connected to a thin film transistor in which a source electrode and a drain electrode that include metal with high oxygen affinity are connected to an oxide semiconductor layer with a suppressed impurity concentration. In addition, the thin film transistor including the oxide semiconductor may be surrounded by insulating films to be sealed.

Abstract translation: 本发明的目的是提供一种由具有良好的显示质量的显示装置代表的半导体器件，其中在半导体层和电极之间的连接部分中产生的寄生电阻被抑制，并且具有诸如电压降等的不利影响 防止由于布线电阻而导致像素的信号布线，灰度级的缺陷等。 为了实现上述目的，根据本发明的半导体器件可以具有这样的结构，其中具有低电阻的布线连接到薄膜晶体管，其中包括具有高氧亲和力的金属的源电极和漏电极是 连接到具有抑制的杂质浓度的氧化物半导体层。 另外，包含氧化物半导体的薄膜晶体管也可以被要被密封的绝缘膜包围。