公开(公告)号：US06541279B2

公开(公告)日：2003-04-01

申请号：US09798310

申请日：2001-03-02

申请人： Shinichiro Hayashi ,  Vikram Joshi ,  Narayan Solayappan ,  Joseph D. Cuchiaro ,  Carlos A. Paz de Araujo

发明人： Shinichiro Hayashi ,  Vikram Joshi ,  Narayan Solayappan ,  Joseph D. Cuchiaro ,  Carlos A. Paz de Araujo

IPC分类号： H01L2100

CPC分类号： H01L21/02197 ,  H01L21/02205 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/31691 ,  H01L27/0629

摘要： A high dielectric constant insulator including a thin film of a metal oxide selected from the group consisting of tungsten-bronze-type oxides, pyrochlore-type oxides, and combinations of Bi2O3 with an oxide selected from the group consisting of perovskites and pyrochlore-type oxides. An embodiment contains metal oxides represented by the general stoichiometric formulas AB2O6, A2B2O7 and A2Bi2B2O10, wherein A represents A-site atoms selected from the group of metals consisting of Ba, Bi, Sr, Pb, Ca, K, Na and La; and B represents B-site atoms selected from the group of metals consisting of Ti, Zr, Ta, Hf, Mo, W and Nb. Preferably, the metal oxides are (BaxSr1−x)(TayNb1−y)2O6, where 0≦x≦1.0 and 0≦y≦1.0; (BaxSr1−x)2(TayNb1−y)2O7, where 0≦x≦1.0 and 0≦y≦1.0; and (BaxSr1−x)2Bi2(TayNby−1)2O10, where 0≦x≦1.0 and 0≦y≦1.0. Thin films according to the invention have a relative dielectric constant ≧40, and preferably about 100. The value of Vcc in the metal oxides of the invention is close to zero. The value of Tcc is

摘要翻译： 一种高介电常数绝缘体，包括选自钨青铜型氧化物，烧绿石型氧化物和Bi 2 O 3与选自钙钛矿和烧绿石型氧化物的氧化物的组合的金属氧化物的薄膜 。 一个实施方案包含由一般化学计量式AB2O6，A2B2O7和A2B2B2O10表示的金属氧化物，其中A表示选自由Ba，Bi，Sr，Pb，Ca，K，Na和La组成的金属组中的A位原子; B表示选自由Ti，Zr，Ta，Hf，Mo，W和Nb组成的金属组中的B位原子。 优选地，金属氧化物是（BaxSr1-x）（TayNb1-y）2O6，其中0 <= x <= 1.0且0 <= y <= 1.0; （BaxSr1-x）2（TayNb1-y）2O7，其中0 <= x <= 1.0且0 <= y <= 1.0; 和（BaxSr1-x）2Bi2（TayNby-1）2O10，其中0 <= x <= 1.0且0 <= y <= 1.0。 根据本发明的薄膜的相对介电常数> 40，优选约100.本发明金属氧化物中的Vcc值接近零。 Tcc的值<1000ppm，优选<100。

公开(公告)号：US06469334B2

公开(公告)日：2002-10-22

申请号：US09821596

申请日：2001-03-29

申请人： Koji Arita ,  Shinichiro Hayashi ,  Tatsuo Otsuki ,  Carlos A. Paz de Araujo

发明人： Koji Arita ,  Shinichiro Hayashi ,  Tatsuo Otsuki ,  Carlos A. Paz de Araujo

IPC分类号： H01L2994

CPC分类号： H01L28/56 ,  H01L21/28291 ,  H01L29/516 ,  H01L29/78391

摘要： A ferroelectric FET having an interface insulator layer containing ZrO2. The ferroelectric FET includes a gate oxide layer, the interface insulator layer is located on the gate oxide layer, and ferroelectric layered superlattice material is located on the interface insulator layer, The interface insulator layer has a thickness of from 15 to 25 nanometers.

摘要翻译： 具有含有ZrO 2的界面绝缘体层的铁电FET。 铁电FET包括栅极氧化物层，界面绝缘体层位于栅极氧化物层上，并且铁电层状超晶格材料位于界面绝缘体层上。界面绝缘体层的厚度为15至25纳米。

公开(公告)号：US06448190B1

公开(公告)日：2002-09-10

申请号：US09316917

申请日：1999-05-21

申请人： Shinichiro Hayashi ,  Larry D. McMillan ,  Carlos A. Paz de Araujo

发明人： Shinichiro Hayashi ,  Larry D. McMillan ,  Carlos A. Paz de Araujo

IPC分类号： H01L2100

CPC分类号： H01L21/316 ,  H01L21/3144 ,  H01L2924/0002 ,  H01L2924/00

摘要： A thin film of solid material is selectively formed during fabrication of an integrated circuit by applying a liquid precursor to a substrate having a first surface and a second surface and treating the liquid precursor. The first surface has different physical properties than the second surface such that a solid thin film forms on the first surface but does not form on the second surface. The substrate is washed after formation of said solid thin film to remove any residues of said liquid from the second substrate surface.

摘要翻译： 通过将液体前体施加到具有第一表面和第二表面的基底并处理液体前体，在制造集成电路期间选择性地形成固体材料薄膜。 第一表面具有与第二表面不同的物理性质，使得在第一表面上形成固体薄膜，但不形成在第二表面上。 在形成所述固体薄膜之后洗涤底物以从第二基材表面除去所述液体的任何残余物。

公开(公告)号：US06351004B1

公开(公告)日：2002-02-26

申请号：US09688494

申请日：2000-10-16

申请人： Yasuhiro Shimada ,  Shinichiro Hayashi ,  Kiyoshi Uchiyama ,  Keisuke Tanaka

发明人： Yasuhiro Shimada ,  Shinichiro Hayashi ,  Kiyoshi Uchiyama ,  Keisuke Tanaka

IPC分类号： H01L2978

CPC分类号： H01L29/6684 ,  H01L21/28291 ,  H01L29/772 ,  H01L29/78391

摘要： A tunneling transistor is provided as an effective means for miniaturization of a semiconductor integrated circuit having nonvolatile memory. An insulating layer is disposed on a silicon substrate. A source and a drain are disposed on the insulating layer, with an insulator of a few nanometers in thickness that provides a tunnel barrier being interposed between the source and the drain. A ferroelectric layer that exhibits spontaneous polarization is disposed directly above a region of the source that is adjacent to the insulator. With this construction, when the ferroelectric layer is polarized in a predetermined direction, at least a portion of the region of the source adjacent to the insulator forms a depletion region, with it being possible to vary the amount of current tunneling through the insulator depending on whether the ferroelectric layer is polarized or not.

摘要翻译： 提供隧道晶体管作为具有非易失性存储器的半导体集成电路的小型化的有效手段。 绝缘层设置在硅衬底上。 源极和漏极设置在绝缘层上，具有几纳米厚度的绝缘体，其提供了在源极和漏极之间插入的隧道势垒。 显示自发极化的铁电层直接设置在与绝缘体相邻的源极的正上方。 利用这种结构，当铁电层在预定方向上极化时，与绝缘体相邻的源极的区域的至少一部分形成耗尽区，根据该结构，可以改变通过绝缘体的电流隧穿量 铁电层是否极化。

公开(公告)号：US06255121B1

公开(公告)日：2001-07-03

申请号：US09258489

申请日：1999-02-26

申请人： Koji Arita ,  Shinichiro Hayashi ,  Tatsuo Otsuki ,  Carlos A. Paz de Araujo

发明人： Koji Arita ,  Shinichiro Hayashi ,  Tatsuo Otsuki ,  Carlos A. Paz de Araujo

IPC分类号： H01L2100

CPC分类号： H01L28/56 ,  H01L21/28291 ,  H01L29/516 ,  H01L29/78391

摘要： A method for forming an interface insulator layer in a ferroelectric FET memory, in which a liquid precursor is applied to a semiconductor substrate. Preferably, the liquid precursor is an enhanced metalorganic decomposition (“EMOD”) precursor, applied using a liquid-source misted deposition technique. Preferably, the EMOD precursor solution applied to the substrate contains metal ethylhexanoates containing metal moieties in relative molar proportions for forming an interface insulator layer containing ZrO2, CeO2, Y2O3 or (Ce1-xZrx)O2, wherein 0≦x≦1.

摘要翻译： 一种用于在铁电FET存储器中形成界面绝缘体层的方法，其中将液体前体施加到半导体衬底。 优选地，液体前体是使用液体源雾化沉积技术施加的增强的金属有机分解（“EMOD”）前体。 优选地，施加到基底上的EMOD前体溶液含有相对摩尔比例含有金属部分的金属乙基己酸，以形成含有ZrO 2，CeO 2，Y 2 O 3或（Ce 1-x Zr x）O 2的界面绝缘体层，其中0≤x≤1。

公开(公告)号：US5187456A

公开(公告)日：1993-02-16

申请号：US587093

申请日：1990-09-24

申请人： Shinichiro Hayashi

发明人： Shinichiro Hayashi

IPC分类号： H01F27/00 ,  H01F17/06 ,  H01F27/28 ,  H01F27/36 ,  H03H1/00 ,  H03H7/09

CPC分类号： H01F27/362 ,  H01F17/06 ,  H01F27/2847 ,  H01F27/36 ,  H03H1/0007

摘要： A line filter arranged in such a manner that a foil conductors are used as the coil conductor and the shield plate, and a reactor is formed therein by laminating and winding the foil conductor and the shield plate with an insulating material held therebetween. A line filter arranged in such a manner that a pair of coil blocks connected to each other in parallel is provided on the iron core leg is included in the scope of the invention. Each of the coil blocks is structured in such a manner that the coil conductor and the shield plate made of the foil conductors are stacked and wound via the insulating material. A structure is included within the scope of the invention, the structure having a plurality of filter mechanisms connected to one another in series, each of the filter mechanisms being constituted by a pair of coil blocks connected to each other in parallel.

摘要翻译： 以箔片导体作为线圈导体和屏蔽板的方式配置的线路滤波器，并且在其间通过层叠和卷绕箔导体和屏蔽板而形成电抗器，绝缘材料保持在其间。 在本发明的范围内，包括以铁芯支腿相互并联连接的一对线圈块的方式配置的线路滤波器。 每个线圈块被构造成使得由箔导体制成的线圈导体和屏蔽板通过绝缘材料堆叠并缠绕。 结构包括在本发明的范围内，该结构具有彼此串联连接的多个过滤器机构，每个过滤机构由一对彼此并联连接的线圈块构成。

公开(公告)号：US08514403B2

公开(公告)日：2013-08-20

申请号：US13086759

申请日：2011-04-14

申请人： Yuichi Ogawa ,  Shinichiro Hayashi ,  Seiji Kamba ,  Takashi Kondo

发明人： Yuichi Ogawa ,  Shinichiro Hayashi ,  Seiji Kamba ,  Takashi Kondo

IPC分类号： G01B11/02

CPC分类号： G01N21/3581 ,  G01N21/3563

摘要： A sample analysis method is provided for analyzing a sample having a permeability to terahertz radiation and accurately measure the composition, physical properties, mass and dimensions of a very small sample or a minute amount of sample by irradiating the sample with terahertz radiation. In the method, a reflective member is provided adjoining a first principal surface of the sample, an entrance member is provided adjoining a second principal surface of the sample, terahertz radiation is delivered from outside of entrance member towards the sample, and the sample is analyzed using an interference wave generated from a first-surface reflected wave at the interface between the first principal surface of the sample and the reflective member and a second-surface reflected wave at the interface between the second principal surface of the sample and the entrance member.

摘要翻译： 提供样品分析方法，用于分析具有太赫兹辐射渗透性的样品，并通过用太赫兹辐射照射样品来精确测量非常小样品或微量样品的组成，物理性质，质量和尺寸。 在该方法中，邻接样品的第一主表面设置反射构件，邻接样品的第二主表面设置入口构件，将太赫兹辐射从入口构件的外部朝向样品传送，并分析样品 使用从样品的第一主表面和反射构件之间的界面处的第一表面反射波产生的干涉波和在样品的第二主表面与入口构件之间的界面处的第二表面反射波。

公开(公告)号：US08253103B2

公开(公告)日：2012-08-28

申请号：US12511016

申请日：2009-07-28

申请人： Yuichi Ogawa ,  Shinichiro Hayashi ,  Eiji Kato

发明人： Yuichi Ogawa ,  Shinichiro Hayashi ,  Eiji Kato

IPC分类号： G01J1/00 ,  G01J5/00

CPC分类号： G01N21/3581 ,  G01N21/95692 ,  H01L31/0232 ,  H01L31/101

摘要： There is provided a measuring apparatus including a space arrangement structure that includes space regions surrounded by conductors in a plane, an electromagnetic wave emitter that emits electromagnetic waves towards an object held by the space arrangement structure, and an electromagnetic wave detector that measures the electromagnetic waves that have passed through the space arrangement structure. Here, characteristics of the object are measured by measuring the electromagnetic waves that have passed through the space arrangement structure. The electromagnetic waves emitted from the electromagnetic wave emitter towards the space arrangement structure are incident on the plane containing the space regions at an angle, and the electromagnetic waves that have passed through the space arrangement structure are measured.

摘要翻译： 提供了一种测量装置，包括：空间布置结构，包括由平面内的导体包围的空间区域;朝向由所述空间布置结构保持的物体发射电磁波的电磁波发射器;以及测量电磁波的电磁波检测器 已经通过了空间布置结构。 这里，通过测量已经通过空间排列结构的电磁波来测量物体的特性。 从电磁波发射器朝向空间配置结构发射的电磁波以一定角度入射在包含空间区域的平面上，并且测量已经通过空间布置结构的电磁波。

公开(公告)号：US20110205528A1

公开(公告)日：2011-08-25

申请号：US13086759

申请日：2011-04-14

申请人： Yuichi Ogawa ,  Shinichiro Hayashi ,  Seiji Kamba ,  Takashi Kondo

发明人： Yuichi Ogawa ,  Shinichiro Hayashi ,  Seiji Kamba ,  Takashi Kondo

IPC分类号： G01N21/55

CPC分类号： G01N21/3581 ,  G01N21/3563

摘要： A sample analysis method is provided for analyzing a sample having a permeability to terahertz radiation and accurately measure the composition, physical properties, mass and dimensions of a very small sample or a minute amount of sample by irradiating the sample with terahertz radiation. In the method, a reflective member is provided adjoining a first principal surface of the sample, an entrance member is provided adjoining a second principal surface of the sample, terahertz radiation is delivered from outside of entrance member towards the sample, and the sample is analyzed using an interference wave generated from a first-surface reflected wave at the interface between the first principal surface of the sample and the reflective member and a second-surface reflected wave at the interface between the second principal surface of the sample and the entrance member.

摘要翻译： 提供样品分析方法，用于分析具有太赫兹辐射渗透性的样品，并通过用太赫兹辐射照射样品来精确测量非常小样品或微量样品的组成，物理性质，质量和尺寸。 在该方法中，邻接样品的第一主表面设置反射构件，邻接样品的第二主表面设置入口构件，将太赫兹辐射从入口构件的外部朝向样品传送，并分析样品 使用从样品的第一主表面和反射构件之间的界面处的第一表面反射波产生的干涉波和在样品的第二主表面与入口构件之间的界面处的第二表面反射波。

公开(公告)号：US07800112B2

公开(公告)日：2010-09-21

申请号：US12257700

申请日：2008-10-24

申请人： Itaru Ootani ,  Shinichiro Hayashi ,  Shinji Nishiura

发明人： Itaru Ootani ,  Shinichiro Hayashi ,  Shinji Nishiura

IPC分类号： H01L27/108

CPC分类号： H01L27/0805 ,  H01L23/5223 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

摘要： A conductive film embedded in a predetermined region on an upper surface of an insulation film and metallic wirings embedded so as to penetrate through the conductive film and protrudes into the insulation film constitute a lower electrode of an MIM capacitor.

摘要翻译： 嵌入在绝缘膜的上表面上的预定区域中的导电膜和嵌入以穿透导电膜并突出到绝缘膜中的金属布线构成MIM电容器的下电极。