Base Station and Mobile Station
    1.
    发明申请
    Base Station and Mobile Station 有权
    基站和移动台

    公开(公告)号:US20090117898A1

    公开(公告)日:2009-05-07

    申请号:US12108047

    申请日:2008-04-23

    CPC classification number: H04W72/005 H04W4/12 H04W68/00

    Abstract: Problems can be solved by a base station to which a location of a mobile station is registered and which performs a radio communication with the MS, and when receiving distribution information, divides the distribution information into N pieces, and incorporates the divided distribution information in N pieces of reception channels to successively transmit them to the MS. It can be achieved by a MS which is in a waiting state of a BS and which performs a radio communication with the BS, and when receiving distribution information which is incorporated in reception channels and divided, stores the distribution information, and when determining completion of the distribution of the distribution information, constructs the N pieces of divided information and displays it.

    Abstract translation: 可以通过登记有移动站的位置并与MS进行无线通信的基站来解决问题,并且当接收到分发信息时,将分发信息划分为N个部分,并将划分的分发信息合并在N中 接收信道,连续发送给MS。 可以通过处于BS的等待状态并与BS进行无线通信的MS来实现,并且当接收到并入接收信道中的分配信息并被分割,存储分发信息时,以及当确定完成时 分发信息的分发,构建N条分割信息并显示。

    Ferroelectric capacitor and method for fabricating the same
    2.
    发明申请
    Ferroelectric capacitor and method for fabricating the same 审中-公开
    铁电电容器及其制造方法

    公开(公告)号:US20070158715A1

    公开(公告)日:2007-07-12

    申请号:US11540761

    申请日:2006-10-02

    CPC classification number: H01L28/75 H01L27/11507 H01L28/56 H01L28/65

    Abstract: In a ferroelectric capacitor comprising: a lower electrode; a ferroelectric film formed on the lower electrode; and an upper electrode formed on the ferroelectric film, variations in composition profile of elements constituting the ferroelectric film are 50% or lower in the thickness direction of the ferroelectric film, and the polarization switching time of the ferroelectric film is 1 μs or less.

    Abstract translation: 在铁电电容器中,包括:下电极; 形成在下电极上的铁电膜; 并且形成在强电介质膜上的上电极,构成铁电体膜的元件的组成轮廓的变化在铁电体膜的厚度方向上为50%以下,强电介质膜的极化切换时间为1μ以下。

    Eraser
    3.
    发明申请
    Eraser 有权
    橡皮

    公开(公告)号:US20070065654A1

    公开(公告)日:2007-03-22

    申请号:US11603794

    申请日:2006-11-22

    Abstract: An eraser is constituted by an elastic material containing a rubber component or a resin component, and a skeleton structure for reinforcing the elastic material, and the skeleton structure is made from a porous structural material such as from an organic polymer that is broken when rubbed. Void portions in the porous structural material of the skeleton structure contain the elastic material of the eraser composition. Here, the skeleton portions of the skeleton structure may have an average thickness of 1 to 100 μm, and the void portions may have an average pore size of 10 μm to 3 mm. The eraser may have a surface hardness of 50 to 80, and also a sticking strength of 1.5 to 20 (kgf).

    Abstract translation: 橡皮擦由包含橡胶组分或树脂组分的弹性材料和用于增强弹性材料的骨架结构构成,并且骨架结构由诸如由摩擦破裂的有机聚合物的多孔结构材料制成。 骨架结构的多孔结构材料中的空隙部分含有橡皮擦组合物的弹性材料。 这里,骨架结构的骨架部的平均厚度可以为1〜100μm,空隙部的平均孔径可以为10μm〜3mm。 橡皮擦的表面硬度可以为50〜80,粘着强度为1.5〜20(kgf)。

    Capacitive element and semiconductor memory device
    5.
    发明申请
    Capacitive element and semiconductor memory device 失效
    电容元件和半导体存储器件

    公开(公告)号:US20050006684A1

    公开(公告)日:2005-01-13

    申请号:US10916482

    申请日:2004-08-12

    CPC classification number: H01L28/55 H01L27/10852 H01L28/65 H01L28/90

    Abstract: A capacitive element includes a lower electrode having a three-dimensional shape, an upper electrode formed so as to be opposed to the lower electrode, and a capacitor insulating film formed between the lower and upper electrodes and made of a crystallized ferroelectric material. The thickness of the capacitor insulating film is set at 12.5 through 100 nm both inclusive.

    Abstract translation: 电容元件包括具有三维形状的下电极,形成为与下电极相对的上电极,以及形成在下电极和上电极之间并由结晶铁电材料制成的电容器绝缘膜。 电容绝缘膜的厚度设定为12.5〜100nm。

    Semiconductor memory
    8.
    发明授权
    Semiconductor memory 有权
    半导体存储器

    公开(公告)号:US06448598B2

    公开(公告)日:2002-09-10

    申请号:US09338542

    申请日:1999-06-23

    CPC classification number: H01L27/10852 H01L28/55

    Abstract: A semiconductor memory includes plural lower electrodes formed on a semiconductor substrate; a capacitor dielectric film of an insulating metal oxide continuously formed over the plural lower electrodes; plural upper electrodes formed on the capacitor dielectric film in positions respectively corresponding to the plural lower electrodes; and plural transistors formed on the semiconductor substrate. The plural lower electrodes are respectively connected with source regions of the plural transistors.

    Abstract translation: 半导体存储器包括形成在半导体衬底上的多个下电极; 连续地形成在所述多个下电极上的绝缘金属氧化物的电容器电介质膜; 在分别对应于多个下电极的位置上形成在电容器电介质膜上的多个上电极; 以及形成在半导体基板上的多个晶体管。 多个下电极分别与多个晶体管的源极区域连接。

    Ferroelectric flat panel displays
    10.
    发明授权
    Ferroelectric flat panel displays 失效
    铁电平板显示屏

    公开(公告)号:US06198225B1

    公开(公告)日:2001-03-06

    申请号:US09326838

    申请日:1999-06-07

    CPC classification number: G09G3/367 G09G3/22 H01J1/30 H01J2201/306 H01J2329/00

    Abstract: A thin film of ferroelectric layered superlattice material in a flat panel display device is energized to selectively influence the display image. In one embodiment, a voltage pulse causes the layered superlattice material to emit electrons that impinge upon a phosphor, causing the phosphor to emit light. In another embodiment, an electric potential creates a remanent polarization in the layered superlattice material, which exerts an electric field in liquid crystal layer, thereby influencing the transmissivity of light through the liquid crystal. The layered superlattice material is a metal oxide formed using an inventive liquid precursor containing an alkoxycarboxylate. The thin film thickness is preferably in the range 50-140 nm, so that polarizabilty and transparency of the thin film is enhanced. A display element may comprise a varistor device to prevent cross-talk between pixels and to enable sudden polarization switching. A functional gradient in the ferroelectric thin film enhances electron emission. Two ferroelectric elements, one on either side of the phosphor may be used to enhance luminescence. A phosphor can be sandwiched between a dielectric and a ferroelectric to enhance emission.

    Abstract translation: 平板显示装置中的铁电层状超晶格材料薄膜被通电以选择性地影响显示图像。 在一个实施例中,电压脉冲使得层状超晶格材料发射撞击磷光体的电子,导致磷光体发光。 在另一个实施例中,电位在层状超晶格材料中产生剩余极化,其在液晶层中施加电场,从而影响透过液晶的透射率。 层状超晶格材料是使用本发明的含有烷氧基羧酸盐的液体前体形成的金属氧化物。 薄膜厚度优选在50-140nm的范围内,从而提高薄膜的极化性和透明度。 显示元件可以包括用于防止像素之间的串扰并允许突发极化切换的变阻器装置。 铁电薄膜中的功能梯度增强了电子发射。 可以使用两个铁电元件,一个在荧光体的两侧,以增强发光。 荧光体可以夹在电介质和铁电体之间以增强发射。

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