Interlayer oxide containing thin films for high dielectric constant application
    1.
    发明授权
    Interlayer oxide containing thin films for high dielectric constant application 有权
    用于高介电常数应用的含有薄膜的层间氧化物

    公开(公告)号:US06495878B1

    公开(公告)日:2002-12-17

    申请号:US09365628

    申请日:1999-08-02

    IPC分类号: H01L27108

    摘要: A high dielectric constant insulator including a thin film of a metal oxide selected from the group consisting of tungsten-bronze-type oxides, pyrochlore-type oxides, and combinations of Bi2O3 with an oxide selected from the group consisting of perovskites and pyrochlore-type oxides. An embodiment contains metal oxides represented by the general stoichiometric formulas AB2O6, A2B2O7 and A2Bi2B2O10, wherein A represents A-site atoms selected from the group of metals consisting of Ba, Bi, Sr, Pb, Ca, K, Na and La; and B represents B-site atoms selected from the group of metals consisting of Ti, Zr, Ta, Hf, Mo, W and Nb. Preferably, the metal oxides are (BaxSr1−x)(TayNb1−y)2O6, where 0≦x≦1.0 and 0≦y≦1.0; (BaxSr1−x)2(TayNb1−Y)2O7, where 0≦x≦1.0 and 0≦y≦1.0; and (BaxSr1−x)2Bi2(TayNb1−y)2O10, where 0≦x≦1.0 and 0≦y≦1.0. Thin films according to the invention have a relative dielectric constant ≧40, and preferably about 100. The value of Vcc in the metal oxides of the invention is close to zero. The value of Tcc is

    摘要翻译: 一种高介电常数绝缘体,包括选自钨青铜型氧化物,烧绿石型氧化物和Bi 2 O 3与选自钙钛矿和烧绿石型氧化物的氧化物的组合的金属氧化物的薄膜 。 一个实施方案包含由一般化学计量式AB2O6,A2B2O7和A2B2B2O10表示的金属氧化物,其中A表示选自由Ba,Bi,Sr,Pb,Ca,K,Na和La组成的金属组中的A位原子; B表示选自由Ti,Zr,Ta,Hf,Mo,W和Nb组成的金属组中的B位原子。 优选地,金属氧化物是(BaxSr1-x)(TayNb1-y)2O6,其中0 <= x <= 1.0且0 <= y <= 1.0; (BaxSr1-x)2(TayNb1-Y)2O7,其中0 <= x <= 1.0且0 <= y <= 1.0; 和(BaxSr1-x)2Bi2(TayNb1-y)2O10,其中0 <= x <= 1.0且0 <= y <= 1.0。 根据本发明的薄膜的相对介电常数> 40,优选约100。本发明的金属氧化物中的Vcc值接近零。 Tcc的值<1000ppm,优选<100。

    Interlayer oxide containing thin films for high dielectric constant application of the formula AB2O6 or AB2O7
    2.
    发明授权
    Interlayer oxide containing thin films for high dielectric constant application of the formula AB2O6 or AB2O7 失效
    含有氧化物的薄膜用于高介电常数应用的AB2O6或AB2O7

    公开(公告)号:US06867452B2

    公开(公告)日:2005-03-15

    申请号:US10278581

    申请日:2002-10-23

    摘要: A high dielectric constant insulator including a thin film of a metal oxide selected from the group consisting of tungsten-bronze-type oxides, pyrochlore-type oxides, and combinations of Bi2O3 with an oxide selected from the group consisting of perovskites and pyrochlore-type oxides. An embodiment contains metal oxides represented by the general stoichiometric formulas AB2O6, A2B2O7 and A2Bi2B2O10, wherein A represents A-site atoms selected from the group of metals consisting of Ba, Bi, Sr, Pb, Ca, K, Na and La; and B represents B-site atoms selected from the group of metals consisting of Ti, Zr, Ta, Hf, Mo, W and Nb. Preferably, the metal oxides are (BaxSr1−x)(TayNb1−y)2O6, where 0≦y≦1.0 and 0≦y≦1.0; (BaxSr1−x)2(TayNb1−y)2O7, where 0≦x≦1.0 and 0≦y≦1.0; and (BaxSr1−x)2Bi2(TayNb1−y)2O10, where 0≦x≦1.0 and 0≦y≦1.0. Thin films according to the invention have a relative dielectric constant ≧40, and preferably about 100. The value of Vcc in the metal oxides of the invention is close to zero. The value of Tcc is

    摘要翻译: 一种高介电常数绝缘体,包括选自钨青铜型氧化物,烧绿石型氧化物和Bi 2 O 3与选自钙钛矿和烧绿石型氧化物的氧化物的组合的金属氧化物的薄膜 。 一个实施方案包含由一般化学计量式AB2O6,A2B2O7和A2B2B2O10表示的金属氧化物,其中A表示选自由Ba,Bi,Sr,Pb,Ca,K,Na和La组成的金属组中的A位原子; B表示选自由Ti,Zr,Ta,Hf,Mo,W和Nb组成的金属组中的B位原子。 优选地,金属氧化物是(BaxSr1-x)(TayNb1-y)2O6,其中0 <= y <= 1.0且0 <= Y&LE; 1.0; (BAxSr1-x)2(TayNb1-y)2O7,其中0 <= x <= 1.0且0 <= y <= 1.0; AND(BAxSr1-x)2Bi2(TayNb1-y)2O10,其中0 <= x <= 1.0且0 <= y <= 1.0。 根据本发明的薄膜的相对介电常数> 40,优选约100。本发明的金属氧化物中的Vcc值接近零。 Tcc的值<1000ppm,优选<100。

    Method for forming an integrated circuit
    3.
    发明授权
    Method for forming an integrated circuit 有权
    集成电路形成方法

    公开(公告)号:US06541279B2

    公开(公告)日:2003-04-01

    申请号:US09798310

    申请日:2001-03-02

    IPC分类号: H01L2100

    摘要: A high dielectric constant insulator including a thin film of a metal oxide selected from the group consisting of tungsten-bronze-type oxides, pyrochlore-type oxides, and combinations of Bi2O3 with an oxide selected from the group consisting of perovskites and pyrochlore-type oxides. An embodiment contains metal oxides represented by the general stoichiometric formulas AB2O6, A2B2O7 and A2Bi2B2O10, wherein A represents A-site atoms selected from the group of metals consisting of Ba, Bi, Sr, Pb, Ca, K, Na and La; and B represents B-site atoms selected from the group of metals consisting of Ti, Zr, Ta, Hf, Mo, W and Nb. Preferably, the metal oxides are (BaxSr1−x)(TayNb1−y)2O6, where 0≦x≦1.0 and 0≦y≦1.0; (BaxSr1−x)2(TayNb1−y)2O7, where 0≦x≦1.0 and 0≦y≦1.0; and (BaxSr1−x)2Bi2(TayNby−1)2O10, where 0≦x≦1.0 and 0≦y≦1.0. Thin films according to the invention have a relative dielectric constant ≧40, and preferably about 100. The value of Vcc in the metal oxides of the invention is close to zero. The value of Tcc is

    摘要翻译: 一种高介电常数绝缘体,包括选自钨青铜型氧化物,烧绿石型氧化物和Bi 2 O 3与选自钙钛矿和烧绿石型氧化物的氧化物的组合的金属氧化物的薄膜 。 一个实施方案包含由一般化学计量式AB2O6,A2B2O7和A2B2B2O10表示的金属氧化物,其中A表示选自由Ba,Bi,Sr,Pb,Ca,K,Na和La组成的金属组中的A位原子; B表示选自由Ti,Zr,Ta,Hf,Mo,W和Nb组成的金属组中的B位原子。 优选地,金属氧化物是(BaxSr1-x)(TayNb1-y)2O6,其中0 <= x <= 1.0且0 <= y <= 1.0; (BaxSr1-x)2(TayNb1-y)2O7,其中0 <= x <= 1.0且0 <= y <= 1.0; 和(BaxSr1-x)2Bi2(TayNby-1)2O10,其中0 <= x <= 1.0且0 <= y <= 1.0。 根据本发明的薄膜的相对介电常数> 40,优选约100.本发明金属氧化物中的Vcc值接近零。 Tcc的值<1000ppm,优选<100。

    Ferroelectric and high dielectric constant transistors
    4.
    发明授权
    Ferroelectric and high dielectric constant transistors 失效
    铁电和高介电常数晶体管

    公开(公告)号:US06559469B1

    公开(公告)日:2003-05-06

    申请号:US09686552

    申请日:2000-10-11

    IPC分类号: H01L2972

    摘要: An integrated circuit includes a layered superlattice material having the formula A1w1+a1A2w2+a2 . . . Ajwj+ajS1x1+s1S2x2+s2 . . . Skxk+skB1y1+b1B2y2+b2 . . . Blyl+blQz−q, where A1, A2 . . . Aj represent A-site elements in a perovskite-like structure, S1, S2 . . . Sk represent superlattice generator elements, B1, B2 . . . B1 represent B-site elements in a perovskite-like structure, Q represents an anion, the superscripts indicate the valences of the respective elements, the subscripts indicate the number of atoms of the element in the unit cell, and at least w1 and y1 are non-zero. Some of these materials are extremely low fatigue ferroelectrics and are applied in ferroelectric FETs in non-volatile memories. Others are high dielectric constant materials that do not degrade or break down over long periods of use and are applied as the gate insulator in volatile memories.

    摘要翻译: 集成电路包括具有公式A1w1 + a1A2w2 + a2的分层超晶格材料。 。 。 Ajwj + ajS1x1 + s1S2x2 + s2。 。 。 Skxk + skB1y1 + b1B2y2 + b2。 。 。 Blyl + blQz-q,其中A1,A2。 。 。 Aj代表钙钛矿结构中的A位元素,S1,S2。 。 。 Sk代表超晶格发生器元件B1,B2。 。 。 B1表示钙钛矿结构中的B位元素,Q表示阴离子,上标表示各元素的化合价,下标表示单元中元素的原子数,并且至少w1和y1为 非零。 这些材料中的一些是非常低的疲劳铁电体,并且被应用在非易失性存储器中的铁电FET中。 其他的是高介电常数材料,其在长期使用中不会劣化或分解,并且作为在绝缘体中的栅绝缘体。

    Ferroelectric field effect transistor, memory utilizing same, and method of operating same
    7.
    发明授权
    Ferroelectric field effect transistor, memory utilizing same, and method of operating same 失效
    铁电场效应晶体管,利用其的存储器及其操作方法

    公开(公告)号:US06339238B1

    公开(公告)日:2002-01-15

    申请号:US09329670

    申请日:1999-06-10

    IPC分类号: H01L2972

    摘要: A ferroelectric non-volatile memory in which each memory cell consists of a single electronic element, a ferroelectric FET. The FET includes a source, drain, gate and substrate. A cell is selected for writing or reading by application of bias voltages to the source, drain, gate or substrate. A gate voltage equal to one truth table logic value and a drain voltage equal to another truth table logic value are applied via a row decoder, and a substrate bias equal to a third truth table logic value is applied via a column decoder to write to the memory a resultant Ids logic state, which can be non-destructively read by placing a voltage across the source and drain.

    摘要翻译: 一种铁电非易失性存储器,其中每个存储单元由单个电子元件,铁电FET组成。 FET包括源极,漏极,栅极和衬底。 通过对源极,漏极,栅极或衬底施加偏置电压来选择单元进行写入或读取。 通过行解码器施加等于一个真值表逻辑值的栅极电压和等于另一个真值表逻辑值的漏极电压,经由列解码器施加等于第三真值表逻辑值的衬底偏置以写入 记录结果Ids逻辑状态,通过在源极和漏极之间放置电压可以非破坏性地读取。

    Process for making an integrated circuit with high dielectric constant
barium-strontium-niobium oxide
    9.
    发明授权
    Process for making an integrated circuit with high dielectric constant barium-strontium-niobium oxide 失效
    制造具有高介电常数钡 - 锶 - 铌氧化物的集成电路的工艺

    公开(公告)号:US5888585A

    公开(公告)日:1999-03-30

    申请号:US767477

    申请日:1996-12-16

    CPC分类号: H01L28/55 H01L21/31691

    摘要: A charge storage device, such as an integrated circuit memory, including a dielectric comprising a barium-strontium-niobium oxide. A liquid precursor including the metals barium, strontium, and niobium is prepared and applied to a platinum electrode. The precursor is baked and annealed to form a dielectric having the formula Ba.sub.x Sr.sub.y Nb.sub.z O.sub.30, where x=1.3 to 3.5, y=1.5 to 3.7, and z =10. A top platinum electrode is then formed to provide a memory cell capacitor. Optimum results to date have been obtained with Ba.sub.2 Sr.sub.3 Nb.sub.10 O.sub.30, which yields a memory cell dielectric with dielectric constant over 1000 and a leakage current of less than 10.sup.-5 amperes per square centimeter for voltages up to 5 volts.

    摘要翻译: 一种电荷存储装置,例如集成电路存储器,包括包含钡 - 锶 - 氧化铌的电介质。 制备包含金属钡,锶和铌的液体前体并将其施加到铂电极上。 将前体烘烤和退火以形成具有式BaxSryNbzO30的电介质,其中x = 1.3至3.5,y = 1.5至3.7,z = 10。 然后形成顶部铂电极以提供存储单元电容器。 Ba2Sr3Nb10O30已经获得了迄今为止最佳的结果,其产生介电常数超过1000的存储单元电介质,对于高达5伏的电压,漏电流小于10-5安培/平方厘米。

    PSZT for integrated circuit applications
    10.
    发明授权
    PSZT for integrated circuit applications 失效
    PSZT用于集成电路应用

    公开(公告)号:US5811847A

    公开(公告)日:1998-09-22

    申请号:US672421

    申请日:1996-06-28

    CPC分类号: H01L27/11502 H01L28/55

    摘要: An integrated circuit memory, MMIC, or other device including a dielectric comprising lead-tin zirconium-titanium oxide (PSZT). The proportion of tin ranges from 30% to 50% of the total amount of tin, zirconium and titanium. The dielectric is formed by applying a first liquid precursor having 10% excess lead to a substrate and heating it to form a first PSZT thin film, applying a second liquid precursor having 5% excess lead to the first thin film and heating to form a second thin film, then applying the first liquid precursor and heating to form a third thin film, and annealing the three thin films together to form a PSZT dielectric layer.

    摘要翻译: 集成电路存储器,MMIC或包括包含铅 - 锡锆 - 氧化钛(PSZT)的电介质的其它器件。 锡的比例范围为锡,锆和钛的总量的30%至50%。 通过将具有10%过量的铅的第一液体前体施加到基底上并加热以形成第一PSZT薄膜,将具有5%多余铅的第二液体前体施加到第一薄膜上并加热形成第二个 薄膜,然后施加第一液体前体并加热以形成第三薄膜,并将三个薄膜退火在一起以形成PSZT介电层。