公开(公告)号：US06373976B1

公开(公告)日：2002-04-16

申请号：US09122252

申请日：1998-07-24

申请人： Christophe Pierrat ,  Baorui Yang

发明人： Christophe Pierrat ,  Baorui Yang

IPC分类号： G06K900

CPC分类号： G03F1/42 ,  G03F1/72 ,  G03F1/84 ,  G03F7/70425 ,  G03F7/70616 ,  G03F7/7065 ,  G03F9/70

摘要： A method and apparatus for calibrating the coordinate systems of photomask processing machines improves processing efficiency and the quality of resulting photomasks. A test pattern is printed on an unproductive area of the photomask. The test pattern is used to calibrate the coordinate system of each processing machine on which the photomask is mounted. Using the test pattern as a common reference point enables points located using one processing machine to be quickly and accurately found on a second processing machine. The test pattern is also used as a reference for other metrology measurements.

摘要翻译： 用于校准光掩模处理机的坐标系的方法和装置提高了处理效率和所得光掩模的质量。 测试图案印在光掩模的非生产区域上。 测试图案用于校准安装光掩模的每个加工机器的坐标系。 使用测试图案作为公共参考点使得使用一个处理机器定位的点能够在第二处理机器上快速准确地找到。 测试模式也可用作其它度量测量的参考。

公开(公告)号：US06337172B1

公开(公告)日：2002-01-08

申请号：US09675830

申请日：2000-09-29

申请人： Nanseng Jeng ,  Christophe Pierrat

发明人： Nanseng Jeng ,  Christophe Pierrat

IPC分类号： G03F720

CPC分类号： G03F1/26 ,  G03F1/29 ,  G03F1/32 ,  G03F7/2022 ,  H01L21/0274 ,  H01L21/31144 ,  H01L21/76813 ,  H01L2221/1021

摘要： A semiconductor wafer having a first layer and overlying insulating layer receives a photoresist layer. A first photoresist area is exposed to light having a first dosage, while a second, adjacent photoresist area is concurrently exposed to light having a second dosage. The first area and second area then are concurrently developed to partially expose the photoresist layer. The partial exposure removes photoresist within the first area to one depth and within the second area to a second depth. The second depth differs from the first depth. In one embodiment, the second depth extends through the photoresist down to the insulating layer. After subsequently performing a contact and/or trench etch through the exposed insulating layer and removing excess photoresist above the insulating layer, conductive material is deposited in the contact/trench opening and over the insulating layer. The result is an upper conductive layer coupled to the first layer via a contact or other conductive connection.

摘要翻译： 具有第一层和上覆绝缘层的半导体晶片接收光致抗蚀剂层。 第一光致抗蚀剂区域暴露于具有第一剂量的光，而第二相邻的光致抗蚀剂区域同时暴露于具有第二剂量的光。 然后同时开发第一区域和第二区域以部分地曝光光致抗蚀剂层。 部分曝光将第一区域内的光致抗蚀剂移至一个深度并在第二区域内移至第二深度。 第二深度与第一深度不同。 在一个实施例中，第二深度延伸穿过光致抗蚀剂到达绝缘层。 在随后通过暴露的绝缘层进行接触和/或沟槽蚀刻并且去除绝缘层之上的多余的光致抗蚀剂之后，导电材料沉积在接触/沟槽开口中并在绝缘层上方。 结果是通过接触或其它导电连接耦合到第一层的上导电层。

公开(公告)号：US06319644B2

公开(公告)日：2001-11-20

申请号：US09780407

申请日：2001-02-12

申请人： Christophe Pierrat ,  James E. Burdorf ,  William Baggenstoss ,  William Stanton

发明人： Christophe Pierrat ,  James E. Burdorf ,  William Baggenstoss ,  William Stanton

IPC分类号： G03F900

CPC分类号： G03F1/36 ,  G03F7/70441

摘要： Methods of reducing proximity effects in lithographic processes wherein an integrated circuitry pattern is transferred from a mask onto a semiconductor substrate are described. In one embodiment, a desired spacing is defined between a main feature which is to reside on a mask and which is to be transferred onto the substrate, and an adjacent proximity effects-correcting feature. After the spacing definition, the dimensions of the main feature are adjusted relative to the proximity effects-correcting feature to achieve a desired transferred main feature dimension. In another embodiment, a desired spacing is defined between a main feature having an edge and an adjacent sub-resolution feature. The edge of the main feature is moved relative to the sub-resolution feature to achieve a desired transferred main feature dimension.

公开(公告)号：US06255024B1

公开(公告)日：2001-07-03

申请号：US09539084

申请日：2000-03-30

申请人： Christophe Pierrat

发明人： Christophe Pierrat

IPC分类号： G03F900

CPC分类号： G03F1/32

摘要： An improved photolithographic method employs a pattern of subresolution openings to enhance the printability of clear-field patterns. Incorporating a subresolution opening along the edges of the transmission areas prevents the printing of side lobe light and enables incorporation of a positive bias in the clear-field pattern. This is turn increases the lithographic process latitudes. The photomask must be significantly overexposed as a result of using a positive bias. To compensate for the impact of increased exposure on large transmission areas and avoid degradation of the corresponding resist, a pattern of subresolution openings is incorporated in the large transmission areas. The size and orientation of the subresolution areas creates a diffraction grating effect, reducing the exposure of the area under each transmission area.

摘要翻译： 改进的光刻方法采用分解开口的图案以增强清晰场图案的可印刷性。 沿着透射区域的边缘并入分解开口防止了旁瓣光的打印，并且能够在清晰场图案中并入正偏压。 这是增加光刻过程的纬度。 作为使用正偏压的结果，光掩模必须显着过度曝光。 为了补偿在大的透射区域增加曝光的影响并避免相应的抗蚀剂的劣化，在大透射区域中并入有一个分层开口的图案。 分解区域的尺寸和方向产生衍射光栅效应，减少了每个透射区域下的面积的曝光。

公开(公告)号：US06221564B1

公开(公告)日：2001-04-24

申请号：US09133587

申请日：1998-08-13

申请人： Nanseng Jeng ,  Christophe Pierrat

发明人： Nanseng Jeng ,  Christophe Pierrat

IPC分类号： G03C516

CPC分类号： H01L29/6659 ,  H01L21/0337

摘要： This invention teaches methods and apparatus for forming self-aligned photosensitive material spacers about protruding structures in semiconductor devices. One embodiment of the invention is a method for forming a lightly doped drain (LDD) structure, utilizing disposable photosensitive material spacers. A second embodiment of the invention comprises a method for forming a transistor, having salicided source/drain regions, utilizing photosensitive polyimide spacers for forming the salicided source/drain regions, without disposing of the spacers. A third embodiment of the invention comprises a method for creating an offset from a protruding structure on a semiconductor substrate, using disposable photosensitive material spacers.

摘要翻译： 本发明教导了用于在半导体器件中形成围绕突出结构的自对准感光材料间隔物的方法和装置。 本发明的一个实施例是一种利用一次性感光材料间隔物形成轻掺杂漏极（LDD）结构的方法。 本发明的第二实施例包括一种用于形成具有水银源/漏区的晶体管的方法，利用光敏聚酰亚胺间隔物形成水银源/漏区，而不处理间隔物。 本发明的第三实施例包括使用一次性感光材料间隔件从半导体衬底上的突出结构产生偏移的方法。

公开(公告)号：US6077630A

公开(公告)日：2000-06-20

申请号：US4183

申请日：1998-01-08

申请人： Christophe Pierrat

发明人： Christophe Pierrat

IPC分类号： G03F1/00 ,  G03F1/26 ,  G03F1/32 ,  G03F7/00 ,  G03F9/00

CPC分类号： G03F7/001 ,  G03F1/26 ,  G03F1/32

摘要： A subresolution grating composed of approximately circular contacts is fabricated around the border of the primary pattern of a photomask. As a result, resolution at the edges of the photomask pattern is improved when the pattern is printed on a wafer surface. In addition, the reduced leakage enables a more efficient use of the glass plate on which the photomask is fabricated as well as a more efficient use of the wafer surface as a result of being able to place patterns closer together.

公开(公告)号：US5986625A

公开(公告)日：1999-11-16

申请号：US779616

申请日：1997-01-07

申请人： Karen Huang ,  Christophe Pierrat

发明人： Karen Huang ,  Christophe Pierrat

IPC分类号： G09G3/22 ,  H01J3/02 ,  H01J31/12

CPC分类号： H01J3/022 ,  H01J31/127 ,  G09G3/22

摘要： An application specific field emission display includes one or more extended emitters. The emitters are patterned according to a selected image where the selected image depends upon the application. In one embodiment, an emitter is patterned in a serpentine pattern to provide a single block of illumination. In another application, emitters are grouped in threes and the emitters are driven respectively by the red, green, and blue components of an image signal to produce a multicolor display. In a display assembly according to the invention, application specific emitters are incorporated in subdisplays on a common substrate with a conventional matrix addressable array. The array provides video, graphical or textual information and the subdisplays provide textual, fixed-shaped graphical, numerical or colorized information.

摘要翻译： 应用专用场发射显示器包括一个或多个扩展发射器。 发射器根据所选择的图像被图案化，其中所选择的图像取决于应用。 在一个实施例中，以蛇形图案将发射器图案化以提供单个照明块。 在另一个应用中，发射器被分组为三分之一，并且发射器分别由图像信号的红色，绿色和蓝色分量驱动以产生多色显示。 在根据本发明的显示组件中，应用特定的发射器被并入具有常规矩阵可寻址阵列的公共衬底上的子显示中。 该阵列提供视频，图形或文本信息，子显示提供文本，固定形状的图形，数字或着色信息。

公开(公告)号：US5922497A

公开(公告)日：1999-07-13

申请号：US6236

申请日：1998-01-13

申请人： Christophe Pierrat

发明人： Christophe Pierrat

IPC分类号： G03F1/52 ,  G03F1/62 ,  G03F9/00

CPC分类号： G03F1/52 ,  G03F1/62

摘要： A layer applied over the reticle used in a lithographic system can improve the image quality of the system. The applied layer may have a thickness of approximately the wavelength of incident light divided by four times its index of refraction.

摘要翻译： 施加在光刻系统中使用的掩模版上的层可以提高系统的图像质量。 施加的层可以具有近似于入射光的波长的倍数除以其折射率的四倍的厚度。

公开(公告)号：US5851734A

公开(公告)日：1998-12-22

申请号：US626666

申请日：1996-03-26

申请人： Christophe Pierrat

发明人： Christophe Pierrat

IPC分类号： G03F1/00 ,  G03F7/20

CPC分类号： G03F7/70466 ,  G03F1/70 ,  G03F7/2022

摘要： A process for forming patterns in resist material on a semiconductor wafer that uses two masks to define a pattern instead of a single conventional mask to define the pattern. The present invention realizes better process latitude and resolution for a given feature size than did the prior art.

摘要翻译： 用于在半导体晶片上形成抗蚀剂材料中的图案的方法，其使用两个掩模来限定图案而不是单个常规掩模来限定图案。 对于给定的特征尺寸，本发明实现了比现有技术更好的工艺纬度和分辨率。

公开(公告)号：US5801954A

公开(公告)日：1998-09-01

申请号：US637307

申请日：1996-04-24

申请人： Chin Aik Le ,  Christophe Pierrat

发明人： Chin Aik Le ,  Christophe Pierrat

IPC分类号： G01N21/956 ,  G03F1/00 ,  G06F17/50

CPC分类号： G06F17/5081 ,  G01N2021/95676 ,  G01N21/956

摘要： A process for designing and checking a mask layout is provided. A mask layout is generated from a binary mask layout design. An aerial image of the mask layout is then calculated using simulation software. The simulated aerial image is then compared to the binary mask layout design and modifications are made to the mask layout if necessary.

摘要翻译： 提供了一种用于设计和检查掩模布局的过程。 从二进制掩码布局设计生成掩码布局。 然后使用模拟软件计算掩模布局的空中图像。 然后将模拟的航空图像与二进制掩模布局设计进行比较，如果需要，对掩模布局进行修改。