公开(公告)号：US20160172583A1

公开(公告)日：2016-06-16

申请号：US15049418

申请日：2016-02-22

Applicant: Sony Corporation

Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Hiroyuki Uchida

IPC: H01L43/02 ,  H01L43/10

CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10

Abstract: Provided is an information storage element comprising a first layer, an insulation layer coupled to the first layer, and a second layer coupled to the insulation layer opposite the first layer. The first layer is capable of storing information according to a magnetization state of a magnetic material. The insulation layer includes a non-magnetic material. The second layer includes a fixed magnetization. In an embodiment, the first layer has a transverse length that is approximately 45 nm or less and a volume that is approximately 2,390 nm3 or less. In a further embodiment, the second layer includes MgO and is capable of allowing electrons passing through the second layer reach the first layer before the electrons enter a non-polarized state.

Abstract translation: 提供了一种信息存储元件，包括第一层，耦合到第一层的绝缘层和耦合到与第一层相对的绝缘层的第二层。 第一层能够根据磁性材料的磁化状态存储信息。 绝缘层包括非磁性材料。 第二层包括固定磁化。 在一个实施方案中，第一层具有约45nm或更小的横向长度和约2390nm 3或更小的体积。 在另一实施例中，第二层包括MgO，并且能够使电子通过第二层的电子在电子进入非极化状态之前到达第一层。

公开(公告)号：US09331270B2

公开(公告)日：2016-05-03

申请号：US14330748

申请日：2014-07-14

Applicant: Sony Corporation

Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Tetsuya Asayama ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC: H01L29/82 ,  H01L43/10 ,  H01L43/08 ,  H01L27/22 ,  G11C11/16

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L27/222 ,  H01L27/228 ,  H01L29/82 ,  H01L43/08

Abstract: A memory element includes a layered structure: a memory layer having a magnetization direction changed depending on information, the magnetization direction being changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer, including a first ferromagnetic layer having a magnetization direction that is inclined from a direction perpendicular to a film face, a bonding layer laminated on the first ferromagnetic layer, and a second ferromagnetic layer laminated on the bonding layer and bonded to the first ferromagnetic layer via the bonding layer, having a magnetization direction that is inclined from the direction perpendicular to the film face, a magnetization-fixed layer having a fixed magnetization direction, an intermediate layer that is provided between the memory layer and the magnetization-fixed layer, and is contacted with the first ferromagnetic layer, and a cap layer that is contacted with the second ferromagnetic layer.

Abstract translation: 存储元件包括分层结构：具有根据信息改变的磁化方向的存储层，通过在分层结构的层叠方向施加电流来改变磁化方向，以将信息记录在存储层中，该信息包括第一铁磁 层，其具有从垂直于膜面的方向倾斜的磁化方向，层压在所述第一铁磁层上的接合层和层压在所述接合层上并通过所述接合层接合到所述第一铁磁性层的第二铁磁层， 从垂直于膜面的方向倾斜的磁化方向，具有固定的磁化方向的磁化固定层，设置在存储层和磁化固定层之间的中间层，并与第一铁磁体 层和与第二铁磁体接触的盖层 c层。

公开(公告)号：US09324935B2

公开(公告)日：2016-04-26

申请号：US14334277

申请日：2014-07-17

Applicant: Sony Corporation

Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Hiroyuki Uchida

IPC: G11C11/14 ,  H01L43/02 ,  G11C11/16 ,  H01L43/10 ,  H01F10/32 ,  H01L27/22

CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10

Abstract: Provided is an information storage element comprising a first layer, an insulation layer coupled to the first layer, and a second layer coupled to the insulation layer opposite the first layer. The first layer has a transverse length that is approximately 45 nm or less, or an area that is approximately 1,600 nm2 or less, so as to be capable of storing information according to a magnetization state of a magnetic material. The magnetization state is configured to be changed by a current. The insulation layer includes a non-magnetic material. The second layer includes a fixed magnetization so as to be capable of serving as a reference of the first layer.

Abstract translation: 提供了一种信息存储元件，包括第一层，耦合到第一层的绝缘层和耦合到与第一层相对的绝缘层的第二层。 第一层具有大约45nm或更小的横向长度或大约1,600nm2或更小的面积，以便能够根据磁性材料的磁化状态存储信息。 磁化状态被配置为由电流改变。 绝缘层包括非磁性材料。 第二层包括固定的磁化强度，以便能够作为第一层的参考。

公开(公告)号：US09324424B2

公开(公告)日：2016-04-26

申请号：US14497978

申请日：2014-09-26

Applicant: Sony Corporation

Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC: G11C11/02 ,  G11C13/00 ,  G11C11/16

CPC classification number: G11C13/003 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/1693 ,  G11C13/0002 ,  G11C13/0069 ,  G11C2213/74 ,  G11C2213/79

Abstract: A memory device includes multiple bit lines extending in a first direction, multiple word lines extending in a second direction crossing the first direction, and multiple memory cells each coupled to corresponding two word lines and corresponding two bit lines. Each memory cell includes a memory element configured to store information on the basis of changes in resistance and two select transistors. One terminal of the memory element is coupled to one of the two bit lines corresponding to the memory cell; the other terminal is coupled to respective drains of the select transistors; respective sources of the select transistors are coupled to the other bit line; a gate of one of the select transistors is coupled to one of the two word lines corresponding to the memory cell; and a gate of the other is coupled to the other word line.

Abstract translation: 存储器件包括在第一方向上延伸的多个位线，在与第一方向相交的第二方向上延伸的多个字线，以及分别耦合到对应的两个字线和对应的两个位线的多个存储器单元。 每个存储单元包括被配置为基于电阻变化存储信息的存储元件和两个选择晶体管。 存储元件的一个端子耦合到对应于存储器单元的两个位线之一; 另一个端子耦合到选择晶体管的相应的漏极; 选择晶体管的各个源耦合到另一位线; 选择晶体管之一的栅极耦合到对应于存储单元的两条字线之一; 并且另一个的门耦合到另一个字线。

公开(公告)号：US09251057B2

公开(公告)日：2016-02-02

申请号：US13681999

申请日：2012-11-20

Applicant: Sony Corporation

Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Tetsuya Asayama ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC: G06F12/02 ,  G06F11/16 ,  G06F12/08 ,  G06F11/14 ,  G06F11/10

CPC classification number: G06F12/0246 ,  G06F11/1064 ,  G06F11/1441 ,  G06F11/1666 ,  G06F12/0895 ,  G06F2212/222

Abstract: Disclosed is a nonvolatile cache memory including a nonvolatile memory part and a cache controller. The nonvolatile memory part is configured to store cache data. The cache controller is configured to control reading and writing of the cache data with respect to the nonvolatile memory part. Further, the cache controller is configured to perform, as a preparation for an interruption of power supply, standby preparation processing to generate standby state data and store the generated standby state data in the nonvolatile memory part. Further, the cache controller is configured to perform, at resumption of the power supply, restoration processing of the cache data stored in the nonvolatile memory part using the standby state data.

Abstract translation: 公开了包括非易失性存储器部分和高速缓存控制器的非易失性高速缓冲存储器。 非易失性存储器部件被配置为存储高速缓存数据。 高速缓存控制器被配置为控制关于非易失性存储器部分的高速缓存数据的读取和写入。 此外，高速缓存控制器被配置为执行用于中断电源的准备，备用准备处理以产生待机状态数据并将所生成的备用状态数据存储在非易失性存储器部分中。 此外，高速缓存控制器被配置为在恢复电源时，使用待机状态数据来执行存储在非易失性存储器部分中的高速缓存数据的恢复处理。

公开(公告)号：US20150255134A1

公开(公告)日：2015-09-10

申请号：US14430478

申请日：2013-08-22

Applicant: Sony Corporation

Inventor： Hiroyuki Uchida ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Kazutaka Yamane

IPC: G11C11/16 ,  H01L43/08 ,  H01L43/10 ,  H01L43/02

CPC classification number: G11C11/161 ,  G11B5/3906 ,  G11B5/3909 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: Provided is a storage cell that makes it possible to enhance magnetic characteristics of magnetization pinned layer, a storage device and a magnetic head that include the storage cell. The storage cell includes a layer structure including a base layer, a storage layer in which a direction of magnetization is varied in correspondence with information, a magnetization pinned layer that is formed above the base layer and has magnetization that is perpendicular to a film surface and serves as a reference of information stored in the storage layer, and an intermediate layer that is provided between the storage layer and the magnetization pinned layer and is made of a nonmagnetic body. The base layer has a laminated structure of ruthenium and a nonmagnetic body having a face-centered cubic lattice, and the ruthenium is formed at a location adjacent to the magnetization pinned layer.

Abstract translation: 提供了一种存储单元，其使得可以增强包括存储单元的磁化钉扎层，存储装置和磁头的磁特性。 存储单元包括层结构，其包括基底层，存储层，其中磁化方向与信息相对应地变化;磁化固定层，形成在基底层上方并具有垂直于膜表面的磁化; 用作存储在存储层中的信息的参考，以及设置在存储层和磁化固定层之间并由非磁性体制成的中间层。 基层具有钌和具有面心立方晶格的非磁性体的叠层结构，并且钌形成在与磁化固定层相邻的位置处。

公开(公告)号：US20150249207A1

公开(公告)日：2015-09-03

申请号：US14430065

申请日：2013-08-22

Applicant: SONY CORPORATION

Inventor： Hiroyuki Uchida ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Kazutaka Yamane

IPC: H01L43/08 ,  H01L43/10 ,  H01L43/02

CPC classification number: G11C11/161 ,  G11B5/3909 ,  G11C2213/35 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: Provided is a storage cell that makes it possible to improve TMR characteristics, a storage device and a magnetic head that include the storage cell. The storage cell includes a layer structure including a storage layer in which a direction of magnetization is varied in correspondence with information, a magnetization pinned layer having magnetization that is perpendicular to a film surface and serves as a reference of information stored in the storage layer, and an intermediate layer that is provided between the storage layer and the magnetization pinned layer and is made of a nonmagnetic body. Carbon is inserted in the intermediate layer, and feeding a current in a laminating direction of the layer structure allows the direction of magnetization in the storage layer to be varied, to allow information to be recorded in the storage layer.

Abstract translation: 提供一种能够提高TMR特性的存储单元，包括存储单元的存储装置和磁头。 存储单元包括：层结构，其包括存储层，其中磁化方向与信息相对应地变化，磁化固定层具有垂直于膜表面的磁化，并且用作存储在存储层中的信息的参考; 以及设置在所述存储层和所述磁化被钉扎层之间并由非磁性体制成的中间层。 将碳插入中间层，并且沿着层结构的层叠方向供给电流允许存储层中的磁化方向改变，以便将信息记录在存储层中。

公开(公告)号：US20150235688A1

公开(公告)日：2015-08-20

申请号：US14701401

申请日：2015-04-30

Applicant: Sony Corporation

Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Hiroyuki Uchida

IPC: G11C11/16 ,  H01L43/08 ,  H01L43/02

CPC classification number: G11C11/161 ,  G11C11/15 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: According to some aspects, a layered structure includes a memory layer, a magnetization-fixed layer, and a tunnel insulating layer. The memory layer has magnetization perpendicular to a film face in which a direction of the magnetization is configured to be changed according to information by applying a current in a lamination direction of the layered structure. The magnetization-fixed layer has magnetization parallel or antiparallel to the magnetization direction of the memory layer and comprises a laminated ferripinned structure including a plurality of ferromagnetic layers and one or more non-magnetic layers, and includes a layer comprising an antiferromagnetic material formed on a first ferromagnetic layer of the plurality of ferromagnetic layers and situated between the first ferromagnetic layer and the non-magnetic layer. The tunnel insulating layer is located between the memory layer and the magnetization-fixed layer.

Abstract translation: 根据一些方面，分层结构包括存储层，磁化固定层和隧道绝缘层。 存储层具有垂直于膜面的磁化，其中通过在分层结构的层叠方向上施加电流，磁化方向被配置为根据信息而被改变。 磁化固定层具有与存储层的磁化方向平行或反平行的磁化，并且包括包括多个铁磁层和一个或多个非磁性层的层叠铁极化结构，并且包括包含反铁磁性材料的层 位于第一铁磁层和非磁性层之间的多个铁磁层的第一铁磁层。 隧道绝缘层位于存储层和磁化固定层之间。

公开(公告)号：US20150109851A1

公开(公告)日：2015-04-23

申请号：US14497978

申请日：2014-09-26

Applicant: Sony Corporation

Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC: G11C13/00

CPC classification number: G11C13/003 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/1693 ,  G11C13/0002 ,  G11C13/0069 ,  G11C2213/74 ,  G11C2213/79

Abstract: A memory device includes multiple bit lines extending in a first direction, multiple word lines extending in a second direction crossing the first direction, and multiple memory cells each coupled to corresponding two word lines and corresponding two bit lines. Each memory cell includes a memory element configured to store information on the basis of changes in resistance and two select transistors. One terminal of the memory element is coupled to one of the two bit lines corresponding to the memory cell; the other terminal is coupled to respective drains of the select transistors; respective sources of the select transistors are coupled to the other bit line; a gate of one of the select transistors is coupled to one of the two word lines corresponding to the memory cell; and a gate of the other is coupled to the other word line.

Abstract translation: 存储器件包括在第一方向上延伸的多个位线，在与第一方向相交的第二方向上延伸的多个字线，以及分别耦合到对应的两个字线和对应的两个位线的多个存储器单元。 每个存储单元包括被配置为基于电阻变化存储信息的存储元件和两个选择晶体管。 存储元件的一个端子耦合到对应于存储器单元的两个位线之一; 另一个端子耦合到选择晶体管的相应的漏极; 选择晶体管的各个源耦合到另一位线; 选择晶体管之一的栅极耦合到对应于存储单元的两条字线之一; 并且另一个的门耦合到另一个字线。

公开(公告)号：US20150109846A1

公开(公告)日：2015-04-23

申请号：US14399268

申请日：2013-03-06

Applicant: Sony Corporation

Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Tetsuya Asayama ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC: G11C11/16 ,  G11C5/08

CPC classification number: H04W72/048 ,  G11C5/08 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/1697 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H04W72/085 ,  H04W72/121

Abstract: To provide a memory apparatus capable of operating at high speed with less current and inhibiting a decrease in an amplitude of a readout signal.A memory apparatus includes a memory device at least including a memory layer, a magnetic fixed layer, and an intermediate layer made of a non-magnetic body disposed between the memory layer and the magnetic fixed layer; current being capable of flowing in a lamination direction; a wiring for supplying current flowing to the lamination direction; and a memory control unit for storing information by flowing standby current at a predetermined level to the memory device via the wiring to incline the magnetization direction of the memory layer from the direction perpendicular to a film surface and flowing recording current that is higher than the standby current via the wiring to change the magnetization direction of the memory layer.

Abstract translation: 提供能够以较低电流高速运行并且抑制读出信号的振幅降低的存储装置。 存储装置包括存储器件，其至少包括存储层，磁性固定层和由设置在存储层和磁性固定层之间的非磁性体制成的中间层; 电流能够沿层叠方向流动; 用于提供流向层叠方向的电流的布线; 存储器控制单元，用于通过经由布线将预定电平的待机电流从存储器层的磁化方向从垂直于膜表面的方向倾斜并且高于待机的流动记录电流来存储信息 电流通过布线改变存储层的磁化方向。