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    Stripping and removal of organic-containing materials from electronic device substrate surfaces
    61.
    发明授权
    Stripping and removal of organic-containing materials from electronic device substrate surfaces 失效
    从电子器件基板表面剥离和去除含有机物质的材料

    公开(公告)号：US07402213B2

    公开(公告)日：2008-07-22

    申请号：US11347516

    申请日：2006-02-03

    Applicant: Steven Verhaverbeke

    Inventor： Steven Verhaverbeke

    IPC: B08B7/04

    CPC classification number: C23G5/032 ,  G03F7/422 ,  G03F7/423 ,  Y10S134/902

    Abstract: Described herein is a method of removing an organic-containing material from an exposed surface of a large substrate (at least 0.25 m2). The substrate may comprise an electronic device. The exposed surface is treated with a stripping solution comprising ozone (O3) in a solvent, where the solvent comprises acetic anhydride. The stripping solvent used to form the stripping solution may comprise a mixture of acetic anhydride with a co-solvent selected from the group consisting of a carbonate containing 2-4 carbon atoms, ethylene glycol diacetate, and combinations thereof. In some instances, the stripping solution may contain only acetic anhydride and ozone, where the ozone concentration is typically about 300 ppm or greater.

    Abstract translation: 本文描述了从大基材的暴露表面去除含有机物的材料（至少0.25μm2以上）的方法。 衬底可以包括电子器件。 暴露的表面在溶剂中用包含臭氧（O 3 N 3）的汽提溶液处理，其中溶剂包括乙酸酐。 用于形成汽提溶液的汽提溶剂可以包括乙酸酐与选自由2-4个碳原子的碳酸酯，乙二醇二乙酸酯及其组合组成的组的共溶剂的混合物。 在一些情况下，汽提溶液可以仅含有乙酸酐和臭氧，其中臭氧浓度通常为约300ppm或更高。

    Wet chemical treatment to form a thin oxide for high k gate dielectrics
    62.
    发明授权
    Wet chemical treatment to form a thin oxide for high k gate dielectrics 失效
    湿化学处理以形成用于高k栅极电介质的薄氧化物

    公开(公告)号：US07358196B2

    公开(公告)日：2008-04-15

    申请号：US11052160

    申请日：2005-02-07

    Applicant: Steven Verhaverbeke

    Inventor： Steven Verhaverbeke

    IPC: H01L21/302 ,  H01L21/461

    CPC classification number: H01L29/513 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/0228 ,  H01L21/02307 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/28194 ,  H01L21/31675 ,  H01L29/517 ,  H01L29/78 ,  Y10S438/905

    Abstract: Described herein are methods of forming a thin silicon dioxide layer having a thickness of less than eight angstroms on a semiconductor substrate to form the bottom layer of a gate dielectric. A silicon dioxide layer having a thickness of less than eight angstroms may be formed by two different methods. In one method, a sulfuric acid solution is applied to a semiconductor substrate to grow a silicon dioxide layer of less than eight angstroms. The growth of the silicon dioxide layer by the sulfuric acid solution is self-limiting. In another method, a hydrogen peroxide containing solution is applied to a semiconductor substrate for a time sufficient to grow a silicon dioxide layer having a thickness of greater than eight angstroms and then applying an etching solution to etch the silicon dioxide layer down to a thickness of less than eight angstroms.

    Abstract translation: 这里描述的是在半导体衬底上形成厚度小于8埃的薄二氧化硅层以形成栅极电介质的底层的方法。 可以通过两种不同的方法形成厚度小于8埃的二氧化硅层。 在一种方法中，将硫酸溶液施加到半导体衬底上以生长小于8埃的二氧化硅层。 通过硫酸溶液生长二氧化硅层是自限制的。 在另一种方法中，将含过氧化氢的溶液施加到半导体衬底上足以生长厚度大于8埃的二氧化硅层的时间，然后施加蚀刻溶液以将二氧化硅层蚀刻至 不到八埃。

    Single wafer cleaning method to reduce particle defects on a wafer surface
    63.
    发明授权
    Single wafer cleaning method to reduce particle defects on a wafer surface 失效
    单晶圆清洗方法可减少晶圆表面的颗粒缺陷

    公开(公告)号：US07341065B2

    公开(公告)日：2008-03-11

    申请号：US11497182

    申请日：2006-07-31

    Applicant: Steven Verhaverbeke ,  Christopher Laurent Beaudry

    Inventor： Steven Verhaverbeke ,  Christopher Laurent Beaudry

    IPC: B08B6/00 ,  C25F1/00 ,  C25F3/00 ,  C25F5/00

    CPC classification number: H01L21/02052 ,  B08B3/04 ,  B08B3/10 ,  H01L21/67051

    Abstract: Methods of preventing air-liquid interfaces on the surface of a wafer in order to prevent the formation of particle defects on a wafer are presented. The air-liquid interfaces may be prevented by covering the entire surface of the wafer with liquid at all times during a cleaning process while the surface of the wafer is hydrophobic. Methods of preventing the formation of silica agglomerates in a liquid during a pH transition from an alkaline pH to a neutral pH are also presented, including minimizing the turbulence in the liquid solution and reducing the temperature of the liquid solution during the transition.

    Abstract translation: 提出了防止晶片表面上的空气 - 液体界面以防止在晶片上形成颗粒缺陷的方法。 可以通过在清洁过程中始终通过用液体覆盖晶片的整个表面来防止空气 - 液体界面，同时晶片的表面是疏水性的。 还提出了在从碱性pH到中性pH的pH转变期间防止在液体中形成二氧化硅聚集体的方法，包括最小化液体溶液中的湍流并降低在转变期间液体溶液的温度。

    Ammonium hydroxide treatments for semiconductor substrates
    65.
    发明申请
    Ammonium hydroxide treatments for semiconductor substrates 失效

    公开(公告)号：US20070183956A1

    公开(公告)日：2007-08-09

    申请号：US11725126

    申请日：2007-03-15

    Applicant: Steven Verhaverbeke

    Inventor： Steven Verhaverbeke

    IPC: C01C1/00

    CPC classification number: H01L21/02052 ,  C11D1/66 ,  C11D1/72 ,  C11D3/044 ,  C11D3/33 ,  C11D11/0047 ,  C11D11/007

    Abstract: Embodiments of the current invention describe ammonia hydroxide treatments for surfaces. In one embodiment, a method and a cleaning solution including ammonium hydroxide (NH4OH), water (H2O), a chelating agent, and a surfactant for cleaning silicon germanium substrates are described. The cleaning solution does not include hydrogen peroxide (H2O2) because hydrogen peroxide etches germanium. In another embodiment, a method of terminating oxidized surfaces on semiconductor substrates with terminating groups that promote the bonding of the oxidized surface to another surface with a surface treatment containing ammonium hydroxide (NH4OH) is described. The oxidized surface is immediately bonded to a second substrate after evaporation of the surface treatment.

    Method and apparatus for cleaning semiconductor substrates
    69.
    发明申请
    Method and apparatus for cleaning semiconductor substrates 审中-公开
    用于清洁半导体衬底的方法和装置

    公开(公告)号：US20060237043A1

    公开(公告)日：2006-10-26

    申请号：US11114276

    申请日：2005-04-25

    Applicant: Steven Verhaverbeke ,  Roman Gouk

    Inventor： Steven Verhaverbeke ,  Roman Gouk

    IPC: B08B3/02

    CPC classification number: H01L21/67051

    Abstract: According to one aspect of the present invention, a method and apparatus for cleaning a semiconductor substrate are provided. The apparatus may include a chamber wall defining a processing chamber having a chamber gas therein, a semiconductor substrate support, and a fluid nozzle within the processing chamber having first and second pieces. The first piece may have a tip with a tip opening, and the second piece may have inlet and outlet openings and a fluid passageway therethrough interconnecting the inlet and outlet openings. A space may be defined in the fluid nozzle such that when a semiconductor substrate processing fluid is directed into the fluid passageway a relative low pressure region being formed within the fluid passageway to draw the chamber gas into the fluid passageway through the space between in the fluid nozzle, mix with semiconductor substrate processing fluid, and flow onto the semiconductor substrate.

    Abstract translation: 根据本发明的一个方面，提供了一种用于清洁半导体衬底的方法和装置。 该设备可以包括限定其中具有腔室气体的处理室的腔壁，半导体衬底支撑件和处理室内的具有第一和第二块的流体喷嘴。 第一件可以具有带有尖端开口的尖端，并且第二件可具有入口和出口开口以及通过其互连入口和出口的流体通道。 可以在流体喷嘴中限定空间，使得当半导体衬底处理流体被引导到流体通道中时，形成在流体通道内的相对低压区域以将腔室气体通过流体中的空间 喷嘴，与半导体衬底处理流体混合，并流到半导体衬底上。

    Wet chemical treatment to form a thin oxide for high k gate dielectrics
    70.
    发明申请
    Wet chemical treatment to form a thin oxide for high k gate dielectrics 失效
    湿化学处理以形成用于高k栅极电介质的薄氧化物

    公开(公告)号：US20060178015A1

    公开(公告)日：2006-08-10

    申请号：US11052160

    申请日：2005-02-07

    Applicant: Steven Verhaverbeke

    Inventor： Steven Verhaverbeke

    IPC: H01L21/31

    CPC classification number: H01L29/513 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/0228 ,  H01L21/02307 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/28194 ,  H01L21/31675 ,  H01L29/517 ,  H01L29/78 ,  Y10S438/905

    Abstract: Described herein are methods of forming a thin silicon dioxide layer having a thickness of less than eight angstroms on a semiconductor substrate to form the bottom layer of a gate dielectric. A silicon dioxide layer having a thickness of less than eight angstroms may be formed by two different methods. In one method, a sulfuric acid solution is applied to a semiconductor substrate to grow a silicon dioxide layer of less than eight angstroms. The growth of the silicon dioxide layer by the sulfuric acid solution is self-limiting. In another method, a hydrogen peroxide containing solution is applied to a semiconductor substrate for a time sufficient to grow a silicon dioxide layer having a thickness of greater than eight angstroms and then applying an etching solution to etch the silicon dioxide layer down to a thickness of less than eight angstroms.

    Abstract translation: 这里描述的是在半导体衬底上形成厚度小于8埃的薄二氧化硅层以形成栅极电介质的底层的方法。 可以通过两种不同的方法形成厚度小于8埃的二氧化硅层。 在一种方法中，将硫酸溶液施加到半导体衬底上以生长小于8埃的二氧化硅层。 通过硫酸溶液生长二氧化硅层是自限制的。 在另一种方法中，将含过氧化氢的溶液施加到半导体衬底上足以生长厚度大于8埃的二氧化硅层的时间，然后施加蚀刻溶液以将二氧化硅层蚀刻至 不到八埃。

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