公开(公告)号：US4725558A

公开(公告)日：1988-02-16

申请号：US927501

申请日：1986-11-06

申请人： Shunpei Yamazaki ,  Kunio Suzuki ,  Mikio Kinka ,  Takeshi Fukada ,  Masayoshi Abe ,  Ippei Kobayashi ,  Katsuhiko Shibata ,  Masato Susukida ,  Susumu Nagayama ,  Kaoru Koyanagi

发明人： Shunpei Yamazaki ,  Kunio Suzuki ,  Mikio Kinka ,  Takeshi Fukada ,  Masayoshi Abe ,  Ippei Kobayashi ,  Katsuhiko Shibata ,  Masato Susukida ,  Susumu Nagayama ,  Kaoru Koyanagi

IPC分类号： H01L27/142 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/20 ,  H01L31/18

CPC分类号： H01L31/208 ,  H01L31/02021 ,  H01L31/046 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S136/29

摘要： An improved semiconductor defects curing method and apparatus are disclosed which is free from current leakage due to pin-holes or other defects. Also an improved method for processing a semiconductor device is shown. According to the invention, the gaps or holes in the semiconductor layer produced in the fabrication process are filled with insulator in advance of deposition of electrodes.

摘要翻译： 公开了一种改进的半导体缺陷固化方法和装置，其由于针孔或其它缺陷而没有电流泄漏。 还示出了用于处理半导体器件的改进方法。 根据本发明，在制造工艺中生产的半导体层中的间隙或孔在电极沉积之前被填充绝缘体。

公开(公告)号：US07763503B2

公开(公告)日：2010-07-27

申请号：US11275209

申请日：2005-12-19

申请人： Shunpei Yamazaki ,  Toshiji Hamatani ,  Takeshi Fukada

发明人： Shunpei Yamazaki ,  Toshiji Hamatani ,  Takeshi Fukada

IPC分类号： H01L21/84

CPC分类号： H01L27/1222 ,  H01L27/1214 ,  H01L27/1274 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/78696 ,  Y10S438/908

摘要： In a semiconductor device manufacturing process, a gate insulating film forming step, an amorphous semiconductor film forming step, and an insulating film forming step are continuously performed without taking out the substrate to the atmosphere.

摘要翻译： 在半导体器件制造工艺中，连续地执行栅绝缘膜形成步骤，非晶半导体膜形成步骤和绝缘膜形成步骤，而不将基板取出到大气中。

公开(公告)号：US20060105514A1

公开(公告)日：2006-05-18

申请号：US11275209

申请日：2005-12-19

申请人： Shunpei Yamazaki ,  Toshiji Hamatani ,  Takeshi Fukada

发明人： Shunpei Yamazaki ,  Toshiji Hamatani ,  Takeshi Fukada

IPC分类号： H01L21/8234 ,  H01L21/336

CPC分类号： H01L27/1222 ,  H01L27/1214 ,  H01L27/1274 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/78696 ,  Y10S438/908

摘要： Two kinds of a thin film semiconductor unit are disposed over a substrate. A first thin film semiconductor unit includes a polycrystalline semiconductor thin film, and a second thin film semiconductor unit includes an amorphous semiconductor thin film.

摘要翻译： 在基板上设置两种薄膜半导体单元。 第一薄膜半导体单元包括多晶半导体薄膜，第二薄膜半导体单元包括非晶半导体薄膜。

公开(公告)号：US06623122B1

公开(公告)日：2003-09-23

申请号：US09675715

申请日：2000-09-29

申请人： Shunpei Yamazaki ,  Masaaki Hiroki ,  Takeshi Fukada

发明人： Shunpei Yamazaki ,  Masaaki Hiroki ,  Takeshi Fukada

IPC分类号： G03B2126

CPC分类号： G02B27/149 ,  G02B27/145 ,  G02B27/148 ,  G02F1/133609 ,  G02F2001/133622 ,  G03B21/2013 ,  G03B21/208 ,  G03B33/12 ,  H04N5/7441 ,  H04N9/3164

摘要： A light source optical system capable of forming an image having good balance in brightness of red, blue, and green color light, having high overall brightness, and having good color reproducibility, on a screen is provided. The light source optical system has a first lamp, a second lamp, and a condensing optical system for synthesizing a first light emitted from the first lamp and a second light emitted from the second lamp to form irradiation light. The light source optical system is characterized in that the first light and the second light have mutually differing spectral distributions.

摘要翻译： 提供了能够在屏幕上形成具有高整体亮度并具有良好的色彩再现性的红色，蓝色和绿色光的亮度平衡良好的图像的光源光学系统。 光源光学系统具有第一灯，第二灯和聚光系统，用于合成从第一灯发出的第一光和从第二灯发出的第二光，以形成照射光。 光源光学系统的特征在于，第一光和第二光具有相互不同的光谱分布。

公开(公告)号：US06621535B1

公开(公告)日：2003-09-16

申请号：US09296042

申请日：1999-04-21

申请人： Takeshi Fukada

发明人： Takeshi Fukada

IPC分类号： G02F1136

CPC分类号： H01L27/12 ,  H01L27/1248

摘要： There is provided a highly reliable semiconductor device in which electrostatic breakdown can be prevented. A diamond-like carbon (DLC) film is formed on a surface of an insulating substrate, and thereafter, a thin film transistor is formed on the insulating substrate. This DLC film allows charges of static electricity to flow and can prevent electrostatic breakdown of the thin film transistor.

摘要翻译： 提供了可以防止静电击穿的高度可靠的半导体器件。 在绝缘基板的表面上形成类金刚石碳（DLC）膜，然后在绝缘基板上形成薄膜晶体管。 该DLC膜允许静电电荷流动并且可以防止薄膜晶体管的静电击穿。

公开(公告)号：US06479334B1

公开(公告)日：2002-11-12

申请号：US09444405

申请日：1999-11-22

申请人： Mitsufumi Codama ,  Yukio Yamauchi ,  Naoya Sakamoto ,  Takeshi Fukada

发明人： Mitsufumi Codama ,  Yukio Yamauchi ,  Naoya Sakamoto ,  Takeshi Fukada

IPC分类号： H01L2100

CPC分类号： H01L29/78603 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02667 ,  H01L27/1218

摘要： A thin film transistor and a semiconductor device and a method for forming the same. A silicon thin film formed on an insulating substrate is heated at 550 to 800° C. so that it has crystallinity, and a thin film transistor is formed using the crystalline silicon film thus obtained. Thermal contraction of the insulating substrate is set in a range of 30 to 500 ppm in the heating process, so that the thin film transistor has high mobility, low threshold voltage and high off-resistance. Thermal contraction of the insulating substrate may be also set 100 ppm or less in a heating process after a patterning treatment in a thin film transistor producing process.

摘要翻译： 薄膜晶体管和半导体器件及其形成方法。 将形成在绝缘基板上的硅薄膜在550〜800℃下加热，使其具有结晶性，利用所得到的结晶硅膜形成薄膜晶体管。 绝缘基板的热收缩在加热过程中设定在30〜500ppm的范围内，使得薄膜晶体管具有高迁移率，低阈值电压和高截止电阻。 在薄膜晶体管制造工艺中的图案化处理之后，在加热过程中绝缘基板的热收缩也可以设定为100ppm以下。

公开(公告)号：US06458635B2

公开(公告)日：2002-10-01

申请号：US09812359

申请日：2001-03-19

申请人： Shunpei Yamazaki ,  Toshiji Hamatani ,  Takeshi Fukada

发明人： Shunpei Yamazaki ,  Toshiji Hamatani ,  Takeshi Fukada

IPC分类号： H01L2100

CPC分类号： H01L27/1222 ,  H01L27/1214 ,  H01L27/1274 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/78696 ,  Y10S438/908

摘要： In a semiconductor device manufacturing process, a gate insulating film forming step, an amorphous semiconductor film forming step, a crystallizing step and an etch stopper insulating film forming step are continuously performed without exposing the atmosphere.

摘要翻译： 在半导体器件制造工艺中，连续地进行栅极绝缘膜形成步骤，非晶半导体膜形成步骤，结晶步骤和蚀刻停止绝缘膜形成步骤，而不暴露气氛。

公开(公告)号：US06177302B1

公开(公告)日：2001-01-23

申请号：US08310364

申请日：1994-09-22

申请人： Shunpei Yamazaki ,  Hongyong Zhang ,  Takashi Inushima ,  Takeshi Fukada

发明人： Shunpei Yamazaki ,  Hongyong Zhang ,  Takashi Inushima ,  Takeshi Fukada

IPC分类号： H01L2184

CPC分类号： H01L29/66757 ,  C23C14/568 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02631 ,  H01L21/02661 ,  Y10S438/906 ,  Y10S438/907 ,  Y10S438/908

摘要： A method of manufacturing thin film field effect transistors is described. The channel region of the transistors is formed by depositing an amorphous semiconductor film in a first sputtering apparatus followed by thermal treatment for converting the amorphous phase to a polycrystalline phase. The gate insulating film is formed by depositing an oxide film in a second sputtering apparatus connected to the first apparatus through a gate valve. The sputtering for the deposition of the amorphous semiconductor film is carried out in an atmosphere comprising hydrogen in order to introduce hydrogen into the amorphous semiconductor film. On the other hand the gate insulating oxide film is deposited by sputtering in an atmosphere comprising oxygen.

摘要翻译： 描述制造薄膜场效应晶体管的方法。 通过在第一溅射装置中沉积非晶半导体膜，然后进行热处理以将非晶相转化为多晶相来形成晶体管的沟道区。 栅极绝缘膜通过在通过闸阀连接到第一装置的第二溅射装置中沉积氧化膜而形成。 用于沉积非晶半导体膜的溅射在包括氢的气氛中进行，以便将氢引入到非晶半导体膜中。 另一方面，通过溅射在包含氧的气​​氛中沉积栅极绝缘氧化物膜。

公开(公告)号：US5296405A

公开(公告)日：1994-03-22

申请号：US933718

申请日：1992-08-24

申请人： Shunpei Yamazaki ,  Kunio Suzuki ,  Susumu Nagayama ,  Takashi Inujima ,  Masayoshi Abe ,  Takeshi Fukada ,  Mikio Kinka ,  Ippei Kobayashi ,  Katsuhiko Shibata ,  Masato Susukida ,  Kaoru Koyanagi

发明人： Shunpei Yamazaki ,  Kunio Suzuki ,  Susumu Nagayama ,  Takashi Inujima ,  Masayoshi Abe ,  Takeshi Fukada ,  Mikio Kinka ,  Ippei Kobayashi ,  Katsuhiko Shibata ,  Masato Susukida ,  Kaoru Koyanagi

IPC分类号： H01L21/30 ,  H01L31/20 ,  H01L21/20 ,  H01L21/324

CPC分类号： H01L21/3003 ,  H01L31/208 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S148/003 ,  Y10S148/004 ,  Y10S148/061 ,  Y10S148/09 ,  Y10S148/093

摘要： An improved semiconductor processing is disclosed. In the manufacturing process, a semiconductor layer is formed and then undergoes photo annealing. A neutralizer is then introduced to the photoannealed semiconductor. The semiconductor thus formed demonstrates the SEL effect instead of the Staebler-Wronski effect.

摘要翻译： 公开了一种改进的半导体处理。 在制造过程中，形成半导体层，然后进行光退火。 然后将中和剂引入到光电导半导体中。 这样形成的半导体表现出SEL效应而不是Staebler-Wronski效应。

公开(公告)号：US5294238A

公开(公告)日：1994-03-15

申请号：US852518

申请日：1992-03-18

申请人： Takeshi Fukada ,  Naoya Sakamoto

发明人： Takeshi Fukada ,  Naoya Sakamoto

IPC分类号： C03C17/34 ,  H01L21/48 ,  H01L23/15 ,  C03B25/00

CPC分类号： C03C17/3435 ,  H01L21/4803 ,  H01L23/15 ,  H01L2924/0002

摘要： A glass substrate usable for a semiconductor device which shrinks less during a heating process. Specifically, lithium is added to the glass substrate material prior to formation. Further, the glass substrate can be thermal annealed in advance. In accordance with the present invention, it is possible to reduce substrate shrinkage even during TFT processing, by using glass material including more than 4% by weight of lithium, and further by heating the glass substrate at a temperature below the glass strain point temperature.

摘要翻译： 可用于在加热过程中收缩较少的半导体器件的玻璃基板。 具体地说，在形成之前，将锂加入到玻璃基板材料中。 此外，可以预先对玻璃基板进行热退火。 根据本发明，通过使用包含4重量％以上的锂的玻璃材料，进一步在低于玻璃应变点温度的温度下加热玻璃基板，即使在TFT加工中也能够降低基板收缩。