摘要:
An optical/electrical interconnect board includes a base material composing an electrical circuit; a plurality of light receiving/emitting units, each of the units being constituted by a light emitting element and a light receiving element packaged on the base material; and an optical fiber tape that connects the light emitting element to the light receiving element for each of the light receiving/emitting units, the optical fiber tape being formed by bringing together optical wires for the units in a side-by-side manner and coating with a first coating material.
摘要:
A graft-modified organic porous material comprising an organic porous material of 1-50 ml/g total pore volume having such an open cell structure that mesopores of 0.01-1000 μm radius are present within walls between macropores communicating with each other and, provided on the surface of the organic porous material, grafted polymer chains, characterized in that the density of polymer chains is at least 0.1 polymer chain per nm2 of surface of organic porous material. Thus, there are provided a graft-modified organic porous material wherein polymer chains have been introduced at high density in surface portion of organic porous material and a process for producing the same.
摘要:
Since the majority of conventional organic/inorganic composite materials are obtained by mechanical blending of a silsesquioxane and an organic polymer or other means, it was extremely difficult to control the structure of the composite as a molecular agglomerate. In order to solve such a problem, the invention is to provide a silicon compound represented by Formula (1). This novel silicon compound has a living radical polymerization initiating ability for addition polymerizable monomers of a wide range. In Formula (1), R1 is hydrogen, an alkyl, an aryl, or an arylalkyl; R2 is an alkyl, phenyl, or cyclohexyl; and A is a group having a polymerization initiating ability for addition polymerizable monomers.
摘要翻译:由于大多数常规有机/无机复合材料是通过机械共混倍半硅氧烷和有机聚合物或其它方法获得的,所以非常难以控制复合材料的结构作为分子聚集体。 为了解决这个问题,本发明提供一种由式(1)表示的硅化合物。 该新型硅化合物具有广泛范围的可加聚单体的活性自由基聚合引发能力。 在式(1)中,R 1是氢,烷基,芳基或芳基烷基; R 2是烷基,苯基或环己基; A是具有加成聚合性单体的聚合引发能力的基团。
摘要:
In an electro-rheological composition comprising an electrical insulating medium and solid particles dispersed therein, insulating solid particles possessed of morphological anisotropy are used as the solid particles. In a preferred embodiment, the insulating solid particles mentioned above are plate-like insulating solid particles, preferably plate-like insulating solid particles having a diameter (particle diameter) not less than 1 μm, more preferably plate-like aluminum oxide particles having a diameter not less than 1 μm. In another preferred embodiment, the insulating solid particles which have undergone a surface treatment with organic molecules or a semiconducting inorganic material, particularly the insulating solid particles having a metal oxide such as tin oxide and titanium oxide adhered to the surfaces thereof are used as the particles. Still another preferred embodiment is the ER composition of which electrical insulating medium is gelled.
摘要:
The present invention provides a novel silicon compound represented by Formula (1) having a living radical polymerization initiating ability for addition-polymerizable monomers and a polymer obtained using the same. The above polymer can provide an organic-inorganic composite material having a distinct structure. wherein R1 is hydrogen, alkyl, aryl or arylalkyl; R2 and R3 are alkyl, phenyl or cyclohexyl; and A is a group having an ability to initiate polymerization of a monomer.
摘要翻译:本发明提供一种由加成聚合性单体具有活性自由基聚合引发能力的式(1)表示的新型硅化合物和使用该硅化合物的聚合物。 上述聚合物可以提供具有不同结构的有机 - 无机复合材料。 其中R 1是氢,烷基,芳基或芳基烷基; R 2和R 3是烷基,苯基或环己基; 而A是具有引发单体聚合能力的基团。
摘要:
A multibeam exposure device carrying out exposure processing by irradiating, onto an exposure surface of a photosensitive material, an exposure beam obtained by modulating a light beam, by a spatial light modulator and in accordance with an image to be exposed and formed, the multibeam exposure device having: an opening plate having an opening disposed on the exposure surface and blocking light which is other than an object of measurement of light quantity data at the spatial light modulator, the opening allowing passage of the exposure beam which corresponds to a pixel which is an object of measurement of light quantity data at the spatial light modulator; a feeding operation mechanism moving the opening plate such that the opening is moved in a direction intersecting a scanning direction at a time of scan-exposure; and a light-receiving element measuring a light quantity of the exposure beam which passes through the opening.
摘要:
In accordance with the present invention, there is provided a process for producing a polymer by a living radical polymerization method which is also applicable to the polymerization of a methacrylate monomer, and a methacrylate-based polymer having a narrow molecular weight distribution which is produced by the above process. Specifically, the present invention relates to a process for producing a methacrylate-based polymer by a atom transfer radical polymerization method in which a polymerizable monomer containing at least one methacrylate monomer is polymerized in the presence of a redox catalyst comprising a metal complex containing at least one transition metal as a central metal selected from the group consisting of elements of Groups 7 to 11 of the Periodic Table, using an organohalogen compound or a halogenated sulfonyl compound as a polymerization initiator.
摘要:
When forming first and second circuits on a semiconductor substrate, an isolation region is provided between the first and second circuits by embedding a conductor in the semiconductor substrate. Also, an output node of a low impedance voltage output circuit that provides a fixed voltage at low impedance is connected to the isolation region. In this way, a noise current caused by high-frequency noise generated from the first or second circuit flows into the low impedance voltage output circuit. Hence leakage of noise signals between the circuits can be suppressed.
摘要:
A semiconductor integrated circuit includes a thermal resistor which is made of a tungsten silicon nitride containing at least about 5% by weight of silicon and formed on a semiconductor substrate directly or via an insulating film. The semiconductor integrated circuit is produced by a method including the steps of: forming a tungsten silicide nitride film on a semiconductor substrate; patterning the tungsten silicide nitride film in a predetermined pattern to form a thermal resistor; and forming a pair of electrodes to be connected to the thermal resistor. The semiconductor integrated circuit is provided so as to have a predetermined resistance by measuring electric characteristics of the semiconductor integrated circuit; obtaining a difference between the measured electric characteristics and desired electric characteristics to calculate a required adjusting amount of a resistance of the thermal resistor; and adjusting the resistance of the thermal resistor by the adjusting amount through heating of the thermal resistor with electric power.
摘要:
There is provided a ball mill having a milling chamber into which metal powder is fed. The ball mill is also provided with milling means for milling metal powder into fine metal powder having a particle size less than a predetermined size. When the ball mill operates, a quantity of heat (Q0) is generated in the milling chamber. The milling chamber is cooled by liquid cooling means and gas cooling means according to the present invention. The liquid cooling means causes cooling liquid to flow along the outside wall of the milling chamber to remove a quantity of heat (Q1) during the ball mill operation. The gas cooling means causes cooling gas to flow through the milling chamber to remove a quantity of heat (Q2) during the ball mill operation. The generated quantity of heat (Q0) can be counterbalanced with the sum of the removed quantities of heat (Q1) and (Q2) so as to prevent the inside of the milling chamber from overheating, so that the ball mill can operate in the condition of Q0/V≧0.05 kW/l, where V is the inner volume of the milling chamber.