公开(公告)号：US07140084B2

公开(公告)日：2006-11-28

申请号：US10995447

申请日：2004-11-23

申请人： Tetsuo Yamada ,  Keigo Nagao ,  Chisen Hashimoto

发明人： Tetsuo Yamada ,  Keigo Nagao ,  Chisen Hashimoto

IPC分类号： H04R17/00 ,  H05K3/10 ,  B24B1/00

CPC分类号： H03H9/173 ,  B06B1/0644 ,  G10K11/04 ,  H03H3/02 ,  H03H9/02094 ,  H03H9/02102 ,  H03H9/02149 ,  H03H9/174 ,  H03H9/562 ,  H03H9/564 ,  H03H9/585 ,  H03H9/587 ,  H03H2003/021 ,  H03H2003/0428 ,  Y10S977/888 ,  Y10T29/42 ,  Y10T29/49155

摘要： A method of producing a thin film bulk acoustic resonator having a piezoelectric layer, a first electrode joined to a first surface of the piezoelectric layer, and a second electrode joined to a second surface of the piezoelectric layer, which is located at the opposite side to the first surface, including the steps of forming a pit on a surface of a substrate; filling the pit with a sacrificial layer; polishing a surface of the sacrificial layer so that the RMS variation of a height of the surface of the sacrificial layer is equal to 25 nm or less; forming the first electrode over a partial area of the surface of the sacrificial layer and a partial area of the surface of the substrate; forming the piezoelectric layer on the first electrode so that RMS variation of a height of the second surface of the piezoelectric layer is equal to 5% or less of a thickness of the piezoelectric layer; forming the second electrode on the piezoelectric layer; and removing the sacrificial layer from the inside of the pit by etching.

摘要翻译： 一种制造具有压电层的薄膜体声波谐振器的方法，连接到压电层的第一表面的第一电极和连接到压电层的第二表面的第二电极，该第二电极位于与压电层相对的一侧 所述第一表面包括在基板的表面上形成凹坑的步骤; 用牺牲层填充坑; 抛光牺牲层的表面，使得牺牲层的表面的高度的RMS变化等于25nm或更小; 在所述牺牲层的表面的部分区域和所述衬底的表面的部分区域上形成所述第一电极; 在第一电极上形成压电层，使得压电层的第二表面的高度的RMS变化等于压电层的厚度的5％以下; 在压电层上形成第二电极; 并通过蚀刻从凹坑的内部去除牺牲层。

公开(公告)号：US07079183B1

公开(公告)日：2006-07-18

申请号：US09680963

申请日：2000-10-06

申请人： Tetsuo Yamada

发明人： Tetsuo Yamada

IPC分类号： H04N5/335

CPC分类号： H01L29/76816 ,  H01L27/14843 ,  H04N5/347 ,  H04N5/3728 ,  H04N5/3765 ,  H04N9/045

摘要： A charge transfer device having: a semiconductor substrate; a charge transfer path formed in the semiconductor substrate and made of a first conductivity type semiconductor layer; a plurality of charge transfer electrodes formed near above the charge transfer path; and a first pulse signal generator circuit for applying either a first pulse signal train for n-phase (n being an integer larger than 1) driving of charges in the charge transfer path to the charge transfer electrodes or a second pulse signal train for (n+1)-phase driving of charges in the charge transfer path to the charge transfer electrodes.

摘要翻译： 一种电荷转移装置，具有：半导体基板; 形成在半导体衬底中并由第一导电类型半导体层制成的电荷传输路径; 多个电荷转移电极，形成在电荷传输路径附近; 以及第一脉冲信号发生器电路，用于向电荷转移电极施加驱动电荷转移路径中的电荷的n相（n为大于1的整数）的第一脉冲信号串或用于（n +1）相电荷驱动电荷到电荷转移电极的电荷转移路径。

公开(公告)号：US07050101B2

公开(公告)日：2006-05-23

申请号：US09983119

申请日：2001-10-23

申请人： Hideki Wako ,  Katsumi Ikeda ,  Tetsuo Yamada

发明人： Hideki Wako ,  Katsumi Ikeda ,  Tetsuo Yamada

IPC分类号： H04N5/335 ,  H01L27/148 ,  H01L21/00

CPC分类号： H01L29/76816 ,  H01L27/14812 ,  H01L27/14831

摘要： A drain region is formed along a horizontal charge transfer channel constituting a horizontal charge transfer element, and a barrier region for charges is formed between the horizontal charge transfer channel and drain region. A two-electrode element is formed by using the horizontal charge transfer channel, barrier region and drain region. A solid state image pickup device can be manufactured with high productivity, which device can drain charges in the horizontal charge transfer element at high speed.

摘要翻译： 沿着构成水平电荷转移元件的水平电荷转移通道形成漏极区，并且在水平电荷转移通道和漏极区之间形成用于电荷的势垒区。 通过使用水平电荷转移通道，阻挡区域和漏极区域形成双电极元件。 可以以高生产率制造固态图像拾取装置，该装置可以高速地在水平电荷转移元件中排出电荷。

公开(公告)号：US07014314B1

公开(公告)日：2006-03-21

申请号：US09579062

申请日：2000-05-26

申请人： Kenichi Kamata ,  Minoru Inuzuka ,  Tetsuo Yamada

发明人： Kenichi Kamata ,  Minoru Inuzuka ,  Tetsuo Yamada

IPC分类号： G02C7/02

CPC分类号： G02C13/003 ,  D06P5/004

摘要： A subsystem for producing a dye base body used for dyeing a spectacle lens is disclosed. This subsystem includes a camera which photographs the face of a customer, a color memory which stores a plurality of color data, a color selection device for selecting a desired color data from among the plurality of color data stored in the color memory, a display controller for controlling a display to display an image of the customer's face photographed by the camera and coloring a lens area of a displayed spectacle frame image in accordance with the selected color data, a printer for printing using sublimatable dye contained therein, and a print controller for controlling the printer to print a predetermined shape with the dye on a printing base body in accordance with the selected color data to produce the dye base body.

摘要翻译： 公开了一种用于制造用于染色眼镜镜片的染料基体的子系统。 该子系统包括拍摄顾客面部的相机，存储多个彩色数据的彩色存储器，用于从存储在彩色存储器中的多个彩色数据中选择所需颜色数据的颜色选择装置，显示控制器 用于控制显示器以显示由相机拍摄的客户脸部的图像，并根据所选择的颜色数据着色所显示的眼镜框图像的镜片区域;打印机，其使用包含在其中的可升华染料进行打印;以及打印控制器， 控制打印机根据所选择的颜色数据在印刷基体上用染料印刷预定的形状以产生染料基体。

公开(公告)号：US20050248238A1

公开(公告)日：2005-11-10

申请号：US10518704

申请日：2003-06-20

申请人： Tetsuo Yamada ,  Kosuke Nishimura ,  Keigo Nagao

发明人： Tetsuo Yamada ,  Kosuke Nishimura ,  Keigo Nagao

IPC分类号： H01L41/22 ,  H01L41/29 ,  H03H3/02 ,  H03H9/02 ,  H03H9/56 ,  H03H9/58 ,  H01L41/047

CPC分类号： H03H9/562 ,  H03H3/02 ,  H03H9/02094 ,  H03H9/02102 ,  H03H9/02157 ,  H03H9/564 ,  H03H9/568 ,  H03H9/585 ,  H03H9/588

摘要： A thin film piezoelectric device includes a substrate (12) having via holes (22) and a piezoelectric laminated structure (14) consisting of a lower electrode (15), a piezoelectric film (16), and an upper electrode (17) formed on the substrate (12) via an insulation layer (13). A plurality of thin film piezoelectric resonators (210, 220) are formed for the via holes (22). The piezoelectric laminated structure (14) includes diaphragms (23) located to face the via holes (22) and a support area other than those. The thin film piezoelectric resonators (210, 220) are electrically connected by the lower electrode (15). When the straight line in the substrate plane passing through the centers (1, 2) of the diaphragms (23) of the thin film piezoelectric resonators (210, 220) has the length D1 of the segment passing through the support area and the distance between the centers of the diaphragms of the thin film piezoelectric resonators (210, 220) is D0,the ratio D1/D0 is 0.1 to 0.5. The via hole (22) is fabricated by the deep graving type reactive ion etching method.

摘要翻译： 一种薄膜压电装置，包括具有通孔（22）的基板（12）和由下电极（15），压电膜（16）和上电极（17）构成的压电层叠结构（14） 所述基板（12）经由绝缘层（13）。 为通孔（22）形成多个薄膜压电谐振器（210,220）。 压电层叠结构（14）包括面对通孔（22）的位置和除了这些之外的支撑区域的隔膜（23）。 薄膜压电谐振器（210,220）通过下电极（15）电连接。 当穿过薄膜压电谐振器（210,220）的隔膜（23）的中心（1,2）的基板平面中的直线具有穿过支撑区域的段的长度D 1和距离 在薄膜压电谐振器（210,220）的膜片的中心之间的距离为D 0，比率D 1 / D 0为0.1至0.5。 通孔（22）通过深刻型反应离子蚀刻法制造。

公开(公告)号：US06936837B2

公开(公告)日：2005-08-30

申请号：US10477308

申请日：2002-05-10

申请人： Tetsuo Yamada ,  Keigo Nagao ,  Chisen Hashimoto ,  Morito Akiyama ,  Naohiro Ueno ,  Hiroshi Tateyama

发明人： Tetsuo Yamada ,  Keigo Nagao ,  Chisen Hashimoto ,  Morito Akiyama ,  Naohiro Ueno ,  Hiroshi Tateyama

IPC分类号： H03H9/02 ,  H03H9/56 ,  H03H9/58 ,  H01L47/00

CPC分类号： H03H9/174 ,  H03H9/02094 ,  H03H9/562 ,  H03H9/564 ,  H03H9/585 ,  H03H9/588 ,  Y10S438/90

摘要： A thin film bulk acoustic resonator comprises a substrate (12) of a silicon single crystal, a base film (13) formed on the substrate (12) and composed of a dielectric film mainly containing silicon oxide, and a piezoelectric stacked structure (14) formed on the base film (13). A vibratory section (21) composed of a part of the base film (13) and a part of the piezoelectric stacked structure (14). The piezoelectric stacked structure (14) includes a lower electrode (15), a piezoelectric film (16), and an upper electrode (17) formed in this order from below. The substrate (12) had a via hole (20) in the region corresponding to the vibratory section (21). The via hole forms a space for allowing vibration of the vibratory section (21). The piezoelectric film (16) is an aluminum nitride thin film containing 0.2 to 3.0 atom % of alkaline earth metal and/or a rare earth metal. Thus, the thin film bulk acoustic resonator has a high performance such as a large electromechanical coupling coefficient, an excellent acoustic quality factor (Q) and an excellent frequency-temperature characteristic.

摘要翻译： 薄膜体声波谐振器包括硅单晶的衬底（12），形成在衬底（12）上并由主要包含氧化硅的电介质膜构成的基膜（13）和压电堆叠结构（14） 形成在基膜（13）上。 由所述基膜（13）的一部分和所述压电堆叠结构（14）的一部分构成的振动部（21）。 压电堆叠结构（14）包括下部电极（15），压电膜（16）和从下方依次形成的上部电极（17）。 基板（12）在对应于振动部分（21）的区域中具有通孔（20）。 通孔形成用于允许振动部分（21）振动的空间。 压电膜（16）是含有0.2〜3.0原子％的碱土金属和/或稀土金属的氮化铝薄膜。 因此，薄膜体声波谐振器具有高的机电耦合系数，良好的声学质量因子（Q）和优异的频率 - 温度特性等性能。

公开(公告)号：US06842088B2

公开(公告)日：2005-01-11

申请号：US10142233

申请日：2002-05-09

申请人： Tetsuo Yamada ,  Keigo Nagao ,  Chisen Hashimoto

发明人： Tetsuo Yamada ,  Keigo Nagao ,  Chisen Hashimoto

IPC分类号： H04R19/02 ,  B06B1/06 ,  G10K11/04 ,  H01L41/09 ,  H01L41/22 ,  H01L41/313 ,  H03H3/02 ,  H03H9/02 ,  H03H9/05 ,  H03H9/13 ,  H03H9/17 ,  H03H9/56 ,  H03H9/58 ,  H04R31/00 ,  H03H9/15 ,  H03H9/54

CPC分类号： H03H9/173 ,  B06B1/0644 ,  G10K11/04 ,  H03H3/02 ,  H03H9/02094 ,  H03H9/02102 ,  H03H9/02149 ,  H03H9/174 ,  H03H9/562 ,  H03H9/564 ,  H03H9/585 ,  H03H9/587 ,  H03H2003/021 ,  H03H2003/0428 ,  Y10S977/888 ,  Y10T29/42 ,  Y10T29/49155

摘要： A pit (52) is formed in a substrate comprising a silicon wafer (51) on a surface of which a silicon oxide thin layer (53) is formed. A sandwich structure (60) comprising a piezoelectric layer (62) and lower and upper electrodes (61, 63) joined to both surfaces of the piezoelectric layer is disposed so as to stride over the pit (52). The upper surface of the lower electrode (61) and the lower surface of the piezoelectric layer (62) joined to the upper surface of the lower electrode are treated so that the RMS variation of the height thereof is equal to 25 nm or less. The thickness of the lower electrode (61) is set to 150 nm or less. According to such a structure, there is provided a high-performance thin film bulk acoustic resonator which are excellent in electromechanical coupling coefficient and acoustic quality factor.

摘要翻译： 在其表面上形成有硅晶片（51）的基板中形成有凹坑（52），其形成有氧化硅薄层（53）。 包括压电层（62）的三明治结构（60）和与压电层的两个表面接合的下电极和上电极（61,63），以跨越凹坑（52）。 处理下电极（61）的上表面和接合到下电极的上表面的压电层（62）的下表面，使得其高度的RMS变化等于25nm或更小。 下电极（61）的厚度设定为150nm以下。 根据这样的结构，提供了机电耦合系数和声音质量因子优异的高性能薄膜体声波谐振器。

公开(公告)号：US06784935B1

公开(公告)日：2004-08-31

申请号：US09432114

申请日：1999-11-02

申请人： Shinji Uya ,  Tetsuo Yamada

发明人： Shinji Uya ,  Tetsuo Yamada

IPC分类号： H04N5335

CPC分类号： H04N5/2355 ,  H04N5/235 ,  H04N5/35581 ,  H04N5/3728

摘要： An image pickup apparatus having:a plurality of photoelectric conversion elements each generating an electric signal through photoelectric conversion; a plurality of signal storage elements for storing the electric signals generated by the photoelectric conversion elements; a plurality of gates for reading the electric signals generated by the photoelectric conversion elements and storing the read electric signals in the signal storage elements; a controller for performing a first image pickup operation by making the photoelectric conversion elements generate the electric signals, reading the generated electric signals and storing the read electric signals in the signal storage elements, thereafter performing a second image pickup operation under an image pickup condition different from the first image pickup operation by making the photoelectric conversion elements generate the electric signals, thereafter outputting the electric signals generated by the first image pickup operation and stored in the signal storage elements to an external, and thereafter reading the electric signals generated by the second image pickup operation from the photoelectric conversion elements, storing the read electric signals in the signal storage elements, and outputting the electric signals to the external; and a synthesizing unit for generating an image signal by subjecting the output electric signals generated by the first and second image pickup operations to a white clip process and synthesizing the output electric signals.

摘要翻译： 一种图像拾取装置，具有：多个光电转换元件，各自通过光电转换产生电信号; 多个信号存储元件，用于存储由光电转换元件产生的电信号; 多个门，用于读取由光电转换元件产生的电信号，并将读取的电信号存储在信号存储元件中; 控制器，用于通过使光电转换元件产生电信号，读取所生成的电信号并将读取的电信号存储在信号存储元件中，然后在不同的图像拾取条件下执行第二图像拾取操作来执行第一图像拾取操作 通过使光电转换元件产生电信号从第一图像拾取操作中，然后将由第一图像拾取操作生成并存储在信号存储元件中的电信号输出到外部，然后读取由第二图像生成的电信号 将来自光电转换元件的图像拾取操作，将读取的电信号存储在信号存储元件中，并将电信号输出到外部; 以及合成单元，用于通过对由第一和第二图像拾取操作产生的输出电信号进行白夹子处理并合成输出电信号来产生图像信号。

公开(公告)号：US06707498B1

公开(公告)日：2004-03-16

申请号：US09188885

申请日：1998-11-10

申请人： Tetsuo Toma ,  Tetsuo Yamada ,  Masashi Inuiya

发明人： Tetsuo Toma ,  Tetsuo Yamada ,  Masashi Inuiya

IPC分类号： H04N5335

CPC分类号： H04N5/3728 ,  H04N5/3452 ,  H04N5/3456

摘要： An image signal processing apparatus includes: a solid-state image pickup device capable of taking a two-dimensional image, the device having a plurality of primary transfer paths and a secondary transfer path, wherein the plurality of primary first transfer each have a plurality of transfer stages each capable of storing electric charges and transfer the electric charges in a first direction, and the secondary transfer path has a plurality of transfer stages each capable of storing electric charges, receives electric charges in the plurality of primary transfer paths, and transfers the electric charges in a second direction; a reading unit for scanning the two-dimensional image on the solid-state image pickup device in a main scan direction corresponding to the second direction and in a sub-scan direction corresponding to the first direction and reading the electric charges in the secondary-transfer path as image signals; and an output unit for outputting the read image signals on a monitor by interchanging the main scan direction and the sub-scan direction.

摘要翻译： 一种图像信号处理装置包括：能够获取二维图像的固态图像拾取装置，该装置具有多个一次传送路径和二次传送路径，其中多个主要第一传送各自具有多个 每个能够存储电荷并沿第一方向传送电荷的传送级，并且二次传送路径具有多个传送级，每个传送级能够存储电荷，在多个一次传送路径中接收电荷，并传送 第二方向的电荷; 读取单元，用于在与第二方向对应的主扫描方向和对应于第一方向的副扫描方向上扫描固态图像拾取装置上的二维图像，并读取二次转印中的电荷 路径作为图像信号; 以及输出单元，用于通过交替主扫描方向和副扫描方向在监视器上输出读取的图像信号。

公开(公告)号：US06367950B1

公开(公告)日：2002-04-09

申请号：US09383380

申请日：1999-08-26

申请人： Tetsuo Yamada ,  Kenji Mitani ,  Masaki Umemoto

发明人： Tetsuo Yamada ,  Kenji Mitani ,  Masaki Umemoto

IPC分类号： F21V500

CPC分类号： F21V13/04 ,  F21S41/322 ,  F21S43/14 ,  F21S43/241 ,  F21S43/243 ,  F21S43/247 ,  F21S43/249 ,  F21S43/315 ,  F21S43/40 ,  F21V5/04 ,  F21V7/0091 ,  F21Y2115/10

摘要： A vehicle lamp fixture is disclosed in which a truncated bowl-shaped reflector 6 is formed as a single unit in front of each respective LED 5. Each reflector is formed from a transparent substance and has an aperture in the front surface. Each reflector also has a reflective surface 6b that totally reflects light from the LED 5 and a light conductive member 6c that conducts at least a portion of light reflected by the reflective surface toward the front of the light fixture. A transparent front lens can thereby be used that does not include light-distributing facets.

摘要翻译： 公开了一种车灯灯具，其中在每个相应的LED 5的前面形成截头碗形反射器6作为单个单元。每个反射器由透明物质形成并且在前表面中具有孔。 每个反射器还具有完全反射来自LED 5的光的反射表面6b和将由反射表面反射的光的至少一部分导向灯具前部的光导体6c。 因此可以使用不包括光分布面的透明前透镜。