利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

99 条记录 (耗时 0.031 秒)

    SEMICONDUCTOR TRANSISTORS WITH CONTACT HOLES CLOSE TO GATES
    61.
    发明申请
    SEMICONDUCTOR TRANSISTORS WITH CONTACT HOLES CLOSE TO GATES 有权
    具有接触孔的半导体晶体管靠近门

    公开(公告)号：US20070102766A1

    公开(公告)日：2007-05-10

    申请号：US11163966

    申请日：2005-11-04

    申请人： Toshiharu Furukawa ,  Mark Hakey ,  Steven Holmes ,  David Horak ,  Charles Koburger ,  William Tonti

    发明人： Toshiharu Furukawa ,  Mark Hakey ,  Steven Holmes ,  David Horak ,  Charles Koburger ,  William Tonti

    IPC分类号： H01L29/78 ,  H01L21/336

    CPC分类号： H01L21/76897 ,  H01L21/28052 ,  H01L21/28061 ,  H01L21/28114

    摘要： A structure and a method for forming the same. The structure includes (a) a semiconductor layer including a channel region disposed between first and second S/D regions; (b) a gate dielectric region on the channel region; (c) a gate region on the gate dielectric region and electrically insulated from the channel region by the gate dielectric region; (d) a protection umbrella region on the gate region, wherein the protection umbrella region comprises a first dielectric material, and wherein the gate region is completely in a shadow of the protection umbrella region; and (e) a filled contact hole (i) directly above and electrically connected to the second S/D region and (ii) aligned with an edge of the protection umbrella region, wherein the contact hole is physically isolated from the gate region by an inter-level dielectric (ILD) layer which comprises a second dielectric material different from the first dielectric material.

    摘要翻译： 一种结构及其形成方法。 该结构包括（a）包括设置在第一和第二S / D区之间的沟道区的半导体层; （b）沟道区上的栅介质区; （c）栅极电介质区域上的栅极区域，并且通过栅极电介质区域与沟道区域电绝缘; （d）栅极区域上的保护伞区域，其中保护伞区域包括第一介电材料，并且其中栅极区域完全处于保护伞区域的阴影中; 和（e）直接在第二S / D区域上方并电连接到第二S / D区域的填充接触孔（i）和（ii）与保护伞区域的边缘对准，其中接触孔通过一个 层间介电层（ILD）层，其包括不同于第一介电材料的第二电介质材料。

    Shrinking Contact Apertures Through LPD Oxide
    62.
    发明申请
    Shrinking Contact Apertures Through LPD Oxide 失效
    通过LPD氧化物收缩接触孔

    公开(公告)号：US20070099416A1

    公开(公告)日：2007-05-03

    申请号：US11163786

    申请日：2005-10-31

    申请人： Toshiharu Furukawa ,  Mark Hakey ,  Steven Holmes ,  David Horak ,  Charles Koburger ,  Larry Nesbit

    发明人： Toshiharu Furukawa ,  Mark Hakey ,  Steven Holmes ,  David Horak ,  Charles Koburger ,  Larry Nesbit

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76816 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144

    摘要： Sublithographic contact apertures through a dielectric are formed in a stack of dielectric, hardmask and oxide-containing seed layer. An initial aperture through the seed layer receives a deposition of oxide by liquid phase deposition, which adheres selectively to the exposed vertical walls of the aperture in the seed layer. The sublithographic aperture, reduced in size by the thickness of the added material, defines a reduced aperture in the hardmask. The reduced hardmask then defines the sublithographic aperture through the dielectric.

    摘要翻译： 通过电介质的亚光刻接触孔形成在电介质，硬掩模和含氧化物种子层的堆叠中。 通过种子层的初始孔径通过液相沉积接收氧化物沉积，该相沉积选择性地粘附到种子层中的孔的暴露的垂直壁。 通过所添加的材料的厚度减小尺寸的亚光刻孔径在硬掩模中限定了减小的孔径。 缩小的硬掩模然后限定通过电介质的亚光刻孔。

    METHOD OF DOPING A GATE ELECTRODE OF A FIELD EFFECT TRANSISTOR
    65.
    发明申请
    METHOD OF DOPING A GATE ELECTRODE OF A FIELD EFFECT TRANSISTOR 失效
    电场效应晶体管的栅极电极的方法

    公开(公告)号：US20060228835A1

    公开(公告)日：2006-10-12

    申请号：US10907569

    申请日：2005-04-06

    申请人： Toshiharu Furukawa ,  Mark Hakey ,  Steven Holmes ,  David Horak ,  Charles Koburger

    发明人： Toshiharu Furukawa ,  Mark Hakey ,  Steven Holmes ,  David Horak ,  Charles Koburger

    IPC分类号： H01L21/84 ,  H01L21/00

    CPC分类号： H01L29/4983 ,  H01L29/4908 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66772 ,  H01L29/7833 ,  H01L29/78621 ,  Y10S977/742 ,  Y10S977/847

    摘要： A method of fabricating a structure and fabricating related semiconductor transistors and novel semiconductor transistor structures. The method of fabricating the structure includes: providing a substrate having a top surface ; forming an island on the top surface of the substrate, a top surface of the island parallel to the top surface of the substrate, a sidewall of the island extending between the top surface of the island and the top surface of the substrate; forming a plurality of carbon nanotubes on the sidewall of the island; and performing an ion implantation, the ion implantation penetrating into the island and blocked from penetrating into the substrate in regions of the substrate masked by the island and the carbon nanotubes.

    摘要翻译： 一种制造结构并制造相关半导体晶体管和新型半导体晶体管结构的方法。 制造该结构的方法包括：提供具有顶表面的基底; 在所述基板的顶表面上形成岛，所述岛的顶表面平行于所述基底的顶表面，所述岛的侧壁在所述岛的顶表面和所述基底的顶表面之间延伸; 在岛的侧壁上形成多个碳纳米管; 并且进行离子注入，所述离子注入在所述岛状体和所述碳纳米管所掩盖的基板的区域中贯穿所述岛并阻止其侵入所述基板。

    System and apparatus for photolithography
    69.
    发明申请
    System and apparatus for photolithography 失效
    用于光刻的系统和装置

    公开(公告)号：US20050213061A1

    公开(公告)日：2005-09-29

    申请号：US10808740

    申请日：2004-03-25

    申请人： Mark Hakey ,  David Horak ,  Charles Koburger ,  Peter Mitchell

    发明人： Mark Hakey ,  David Horak ,  Charles Koburger ,  Peter Mitchell

    IPC分类号： G03B27/52 ,  G03F7/20

    CPC分类号： G03F7/70808 ,  G03F7/70341

    摘要： A photolithographic apparatus, system and method employing an improved refractive medium. The photolithographic apparatus may be used in an immersion lithography system for projecting light onto a workpiece such as a semiconductor wafer. In one embodiment, the photolithographic apparatus includes a container containing a transparent fluid. The fluid container is positioned between a lens element and the wafer. The container is further characterized as having a substantially flexible and transparent bottom membrane contacting an upper surface of the wafer and overlapping at least one side edge of the wafer such that a fluid filled skirt is formed extending beyond the edges of the wafer.

    摘要翻译： 一种使用改进的折射介质的光刻设备，系统和方法。 光刻设备可以用于浸入式光刻系统中，用于将光投射到诸如半导体晶片的工件上。 在一个实施例中，光刻设备包括容纳透明流体的容器。 流体容器位于透镜元件和晶片之间。 容器的特征还在于具有与晶片的上表面接触并且与晶片的至少一个侧边缘重叠的基本柔性且透明的底膜，从而形成延伸超过晶片边缘的充满流体的裙部。

    Moving lens for immersion optical lithography
    70.
    发明申请
    Moving lens for immersion optical lithography 失效
    移动透镜用于浸没式光刻

    公开(公告)号：US20050145803A1

    公开(公告)日：2005-07-07

    申请号：US10749638

    申请日：2003-12-31

    申请人： Mark Hakey ,  David Horak ,  Charles Koburger ,  Peter Mitchell

    发明人： Mark Hakey ,  David Horak ,  Charles Koburger ,  Peter Mitchell

    IPC分类号： G03F7/20 ,  H01L21/027 ,  G01J1/00

    CPC分类号： G03F7/70341 ,  G03F7/70258

    摘要： An apparatus for immersion optical lithography having a lens capable of relative movement in synchrony with a horizontal motion of a semiconductor wafer in a liquid environment where the synchronous motion of the lens apparatus and semiconductor wafer advantageously reduces the turbulence and air bubbles associated with a liquid environment. The relative motions of the lens and semiconductor wafer are substantially the same as the scanning process occurs resulting in optimal image resolution with minimal air bubbles, turbulence, and disruption of the liquid environment.

    摘要翻译： 一种用于浸没式光刻的装置，其具有能够在液晶环境中与半导体晶片的水平运动同步的透镜的透镜，其中透镜装置和半导体晶片的同步运动有利地减少了与液体环境相关的湍流和气泡 。 透镜和半导体晶片的相对运动基本上与扫描过程相同，导致最小的图像分辨率，最小的气泡，湍流和液体环境的破坏。