Sound Image Localization Control Apparatus
    61.
    发明申请
    Sound Image Localization Control Apparatus 审中-公开
    声像定位控制装置

    公开(公告)号:US20080025518A1

    公开(公告)日:2008-01-31

    申请号:US11579168

    申请日:2006-01-20

    IPC分类号: H04R1/40 H04R3/00 H04S1/00

    CPC分类号: H04S3/002

    摘要: An audio signal high frequency component controlled in terms of directivity is reproduced, or an audio signal high frequency component compensated in terms of frequency characteristic or controlled in terms of directivity is reproduced, such that the reflected sound comes from a direction in which the high frequency component is intended to be localized. The sound pressure in a seat where a desired localization effect is not provided due to the arrangement of speakers is compensated such that the interaural amplitude level in the seat is equal to that of another seat. Thus, an equivalent level of localization effect is provided in a plurality of seats, especially for an audio signal high frequency component, without significantly increasing the number of the speakers.

    摘要翻译: 再现方向性控制的音频信号高频分量,或者以频率特性补偿或者以方向性方式被控制的音频信号高频分量被再现,使得反射的声音来自高频 组件旨在本地化。 由于扬声器的布置而不能提供期望的定位效果的座椅中的声压被补偿,使得座椅中的眶内振幅水平等于另一个座椅的声压级。 因此,在多个座位中,特别是对于音频信号高频分量提供了等效的定位效果水平,而不显着增加扬声器的数量。

    Automatic clutch control device
    63.
    发明授权
    Automatic clutch control device 失效
    自动离合器控制装置

    公开(公告)号:US07058498B2

    公开(公告)日:2006-06-06

    申请号:US10699647

    申请日:2003-11-04

    IPC分类号: G06F7/00

    摘要: The automatic clutch control device controls, regardless of the gear-shift operation, the clutch to be brought into a half-clutch state or to a perfect disconnecting state according to a running state of a vehicle from the following five viewpoints deceleration slip amount of driving wheels RL and RR; a convergence time of a driving wheel speed to the driving wheel in a pressure-down mode during a vehicle stabilizing control (for example, ABS control); a continuation time of a judder vibration; whether the vehicle is in a spinning state or not; and whether there is a possibility that an engine stall occurs during a traction control. As a result, this device can attain at least one or more objects of the improvement in stability of the vehicle, improvement in precision of the vehicle stabilizing control, improvement of comfortableness of the occupant and prevention of the occurrence of the engine stall.

    摘要翻译: 自动离合器控制装置根据车辆的行驶状态从以下五个视点来控制离合器进入半离合状态或完全切断状态,而不考虑换档操作,减速滑行量 车轮RL和RR; 在车辆稳定控制(例如,ABS控制)期间以降压模式的驱动轮速度到驱动轮的收敛时间; 持续的抖动时间; 车辆是否处于旋转状态; 以及在牵引力控制期间是否存在发动机失速的可能性。 结果,该装置可以获得车辆的稳定性的提高的至少一个或多个目的,提高车辆稳定控制的精度,提高乘员的舒适性,防止发动机失速的发生。

    Semiconductor device with quantum-wave interference layers
    64.
    发明授权
    Semiconductor device with quantum-wave interference layers 失效
    具有量子波干涉层的半导体器件

    公开(公告)号:US06552412B2

    公开(公告)日:2003-04-22

    申请号:US09320510

    申请日:1999-05-26

    申请人: Hiroyuki Kano

    发明人: Hiroyuki Kano

    IPC分类号: H01L2915

    摘要: A semiconductor device of a pin junction structure, constituted by a quantum-wave interference layers Q1 to Q4 with plural periods of a pair of a first layer W and a second layer B and middle layers (carrier accumulation layers) C1 to C3. The second layer B has wider band gap than the first layer W. Each thicknesses of the first layer W and the second layer B is determined by multiplying by an odd number one fourth of wavelength of quantum-wave of carriers conducted in the i-layer in each of the first layer W and the second layer B existing at the level near the lowest energy level of the second layer B. A &dgr; layer, for sharply varying energy band, is formed at an every interface between the first layer W and the second layer B and has a thickness substantially thinner than the first layer W and the second layer B. Then quantum-wave interference layers and carrier accumulation layers are formed in series. As a result, a hysterisis characteristic that the device has different values of voltage when the electric current rises and decreases abruptly with a step function, or when the current-voltage characteristic varies with a step function can be found.

    摘要翻译: 由具有一对第一层W和第二层B以及中间层(载流子积累层)C1〜C3的多个周期的量子波干涉层Q1〜Q4构成的pin结结构的半导体装置。 第二层B具有比第一层W更宽的带隙。第一层W和第二层B的厚度通过在i层中传导的载流子的量子波的四分之一波长相乘来确定 在第二层B的最低能级附近存在的第一层W和第二层B中的每一层中。在第一层W和第二层B之间的每个界面处形成用于急剧变化能带的增量层 第二层B具有比第一层W和第二层B薄得多的厚度。然后,串联形成量子波干涉层和载流子堆积层。 结果,可以发现,当电流上升时,器件具有不同的电压值并且以阶梯功能突然降低,或者当电流 - 电压特性随着阶梯功能而变化时的滞后特性。

    Light-emitting device with a quantum-wave interference layer
    65.
    发明授权
    Light-emitting device with a quantum-wave interference layer 失效
    具有量子波干涉层的发光装置

    公开(公告)号:US06486490B1

    公开(公告)日:2002-11-26

    申请号:US09425685

    申请日:1999-10-22

    申请人: Hiroyuki Kano

    发明人: Hiroyuki Kano

    IPC分类号: H01L3300

    摘要: An emission layer is formed in a p-layer, and an electron reflecting layer and a hole reflecting layer are formed sandwiching the emission layer. Each of the electron reflecting layer and the hole reflecting layer is constituted by a quantum-wave interference layer with plural periods of a pair of a first layer W and a second layer B. Thicknesses of the first and the second layers in the electron reflecting layer are determined by multiplying by an odd number one fourth of a quantum-wave wavelength of electrons in each of the first and the second layers, and each thicknesses of the first and the second layers in the hole reflecting layer are determined by multiplying by an odd number one fourth of a quantum-wave wavelength of holes in each of the first and the second layers. A luminous efficiency of the LED is improved by electron-hole pairs. The structure in which the emission layer is sandwiched by the electron reflecting layer and the hole reflecting layer is an alternative of a structure in which an i-layer is sandwiched by an n-cladding layer and a p-cladding layer. The emission layer can be formed in a p-layer, and the hole reflecting layer can be formed in an n-layer, an n−-layer or a p−-layer.

    摘要翻译: 在p层中形成发光层,形成夹着发光层的电子反射层和空穴反射层。 电子反射层和空穴反射层中的每一个由具有多个第一层W和第二层B的多个周期的量子波干涉层构成。电子反射层中的第一层和第二层的厚度 通过将第一和第二层中的每一个中的电子的量子波长的四分之一乘以奇数来确定,并且通过乘以奇数来确定空穴反射层中的第一和第二层的每个厚度 在第一和第二层中的每一个中的孔的量子波长波长的四分之一。 通过电子 - 空穴对来提高LED的发光效率。 发射层被电子反射层和空穴反射层夹持的结构是i层被n包层和p包层夹层的结构的替代。 发光层可以形成为p层,并且空穴反射层可以形成为n层,n层或p层。

    Diodes with quantum-wave interference layers
    66.
    发明授权
    Diodes with quantum-wave interference layers 失效
    具有量子波干涉层的二极管

    公开(公告)号:US06188083B1

    公开(公告)日:2001-02-13

    申请号:US09064222

    申请日:1998-04-22

    申请人: Hiroyuki Kano

    发明人: Hiroyuki Kano

    IPC分类号: H01L2906

    摘要: A pin diode, having a p-layer, an n-layer, and an i-layer sandwiched by the p-layer and the n-layer, is constituted by a quantum-wave interference unit with a plurality of pairs of a first layer W and a second layer B. The second layer B has a wider band gap than the first layer W. Each thickness of the first layer W and the second layer b is determined by multiplying by odd number one fourth of quantum-wave wavelength of carriers in each of the first layer W and the second layer B. A &dgr; layer sharply varying in band gap energy from the first and second layers is formed at every interface between the first layer W and the second layer B and has a thickness substantially thinner than the first layer W and the second layer B. A plurality of quantum-wave interference units are formed sandwiching carrier accumulation layers in series. Then, the I-V characteristic of the diode indicates that, for values of an applied backward voltage, a backward electric current can flow rapidly.

    摘要翻译: 具有由p层和n层夹着的p层,n层和i层的pin二极管由具有多对第一层的量子波干涉单元构成 W和第二层B.第二层B具有比第一层W更宽的带隙。第一层W和第二层b的厚度通过乘以载波的量子波长的四分之一 在第一层W和第二层B的每一个中。在第一层W和第二层B之间的每个界面处形成从第一层和第二层的带隙能量急剧变化的增量层,其厚度基本上比 第一层W和第二层B.多个量子波干涉单元被形成为串联地夹持载流子堆积层。 然后,二极管的I-V特性指示,对于所施加的反向电压的值,反向电流可以快速流动。

    Method and device for generating graphic data using a writing motion
model
    67.
    发明授权
    Method and device for generating graphic data using a writing motion model 失效
    使用书写动作模型生成图形数据的方法和装置

    公开(公告)号:US5640589A

    公开(公告)日:1997-06-17

    申请号:US406407

    申请日:1995-03-20

    CPC分类号: G06T17/00

    摘要: Using a writing implement model defined in the O-XYZ coordinate system a character or graphic form is generated on a writing plane model (O-XY plane) defined in the O-XYZ coordinate system. A control polygon for a character or graphical form to be generated is designed in advance in the O-XYZ coordinate system and a smooth writing motion model is generated using local basis functions that are weighted by the coordinate values of the respective vertices of that control polygon. The position component of the writing motion model represents variations in the position of a representative point of the writing implement model in the O-XYZ coordinate system with respect to time, and the posture component of the writing motion model represents time-variations of its inclination in the O-XYZ coordinate system with respect to the O-XYZ coordinate system. The writing implement model and the writing plane model intersect at a time, thereby forming a character segment. If character segments are generated at regular intervals between the start point and the end point of the writing motion, then the entire image of a character or graphic form will be obtained automatically.

    摘要翻译: 使用在O-XYZ坐标系中定义的书写工具模型,在O-XYZ坐标系中定义的书写平面模型(O-XY平面)上生成字符或图形。 在O-XYZ坐标系中预先设计要生成的字符或图形形状的控制多边形,并且使用由该控制多边形的各个顶点的坐标值加权的局部基函数来生成平滑的写入运动模型 。 写入运动模型的位置分量表示O-XYZ坐标系中的书写工具模型的代表点相对于时间的位置的变化,并且书写运动模型的姿态分量表示其倾斜的时间变化 在O-XYZ坐标系中相对于O-XYZ坐标系。 写作工具模型和写作平面模型一次相交,从而形成一个字符段。 如果在写入动作的起点和终点之间以规则的间隔生成字符段,则将自动获得字符或图形的整个图像。

    High pressure fuel supply pump
    68.
    发明授权
    High pressure fuel supply pump 失效
    高压燃油泵

    公开(公告)号:US5603303A

    公开(公告)日:1997-02-18

    申请号:US533913

    申请日:1995-09-26

    摘要: A high pressure fuel supply pump comprises a cylinder, the upper part of which is exposed to the outside of a head cover that is a part of the engine housing, and is fixed to the head cover by means of bolts, not shown. The remaining portion of the high pressure fuel supply pump is received in an accommodation hole of the head cover. A pump cam 111 is mounted to a valve camshaft for driving a suction/exhaust valve and drives the high pressure fuel supply pump. The use of an exclusive shaft for pump driving only, a bearing member therefor, and the like is rendered unnecessary, which enables a reduction in the number of parts employed. Further, since the timing with which the pressurized fuel is discharged is controlled through the operation of a solenoid valve, the precision with which fuel injection is controlled is improved.

    摘要翻译: 高压燃料供给泵包括气缸,其上部暴露于作为发动机壳体的一部分的头盖的外侧,并且通过未示出的螺栓固定到头罩。 高压燃料供给泵的剩余部分被容纳在头盖的容纳孔中。 泵凸轮111安装在阀凸轮轴上,用于驱动吸气/排气阀并驱动高压燃料供给泵。 不需要仅使用用于泵驱动的专用轴,其轴承构件等,这使得能够减少所使用的部件的数量。 此外,由于通过电磁阀的操作来控制加压燃料排出的时间,所以提高了控制燃料喷射的精度。

    Fuel injection valve having different fuel injection angles at different
opening amounts
    69.
    发明授权
    Fuel injection valve having different fuel injection angles at different opening amounts 失效
    具有不同开启量的不同燃油喷射角的燃油喷射阀

    公开(公告)号:US5163621A

    公开(公告)日:1992-11-17

    申请号:US624104

    申请日:1990-12-10

    IPC分类号: F02M61/10 F02M61/16 F02M61/18

    摘要: A fuel injection valve of a diesel engine, comprising a valve body including a concave conical surface in the tip portion of the valve body, and fuel injection holes extending from the concave surface to the outside of the valve body, and a needle valve movable in the valve body and including a cylindrical shaft portion, a first conical surface adjacent to the shaft portion and having a conical angle smaller than that of the concave surface, the lower edge of the first conical surface defining a contact line separably contacting with the concave surface, a second conical surface adjacent to the first surface and having a conical angle substantially equal to that of the concave surface, a third conical surface adjacent to the second surface and having a conical angle greater than that of the concave surface. In case of a smaller lift amount of the needle valve, the fuel flow speed flowing into the fuel injection hole is fast and the atomized fuel injection divergence angle from the injection hole is great, thereby producing active producing mixing of the fuel with the air and enhancing the ignition feature, while in case of a greater lift amount, the fuel flow speed is slow and the atomized fuel injection divergence angle from the injection hole is small, thereby increasing the fuel flow reach and producing an active mixing of the fuel with the air by virtue of the kinetic energy of the atomized fuel flow.

    摘要翻译: 一种柴油发动机的燃料喷射阀,包括阀体,该阀体包括在阀体的顶端部分中的凹形锥形表面,以及从阀体的凹面向外部延伸的燃料喷射孔, 所述阀体包括圆柱形轴部分,与所述轴部分相邻并且具有比所述凹形表面小的圆锥角的第一锥形表面,所述第一锥形表面的下边缘限定与所述凹面可分离地接触的接触线 与所述第一表面相邻并且具有基本上等于所述凹表面的圆锥角的第二锥形表面,与所述第二表面相邻并且具有大于所述凹面的圆锥角的锥形角。 在针阀的提升量较小的情况下,流入燃料喷射孔的燃料流速快,并且来自喷射孔的雾化燃料喷射发散角大,从而产生燃料与空气的主动产生混合, 提高点火特征,而在提升量较大的情况下,燃料流速变慢,喷射孔的雾化燃料喷射发散角小,从而增加燃料流量到达并产生燃料与主燃料的主动混合 借助于雾化燃料流的动能,空气。

    Compound semiconductor device and a method of manufacturing the same
    70.
    发明授权
    Compound semiconductor device and a method of manufacturing the same 失效
    化合物半导体器件及其制造方法

    公开(公告)号:US4925810A

    公开(公告)日:1990-05-15

    申请号:US397367

    申请日:1989-08-24

    摘要: A compound semiconductor device comprises a substrate formed from a single crystal of silicon, a layer of an insulator formed on a portion of a surface of the substrate, at least one layer of a high resistance compound semiconductor formed on the insulator layer, and at least one layer of a single crystal of a compound semiconductor formed on a different portion of the substrate surface from the insulator layer. The device can be manufactured by forming an insulator layer on one portion of a surface of a single crystal silicon substrate, and growing a compound semiconductor by epitaxy on the insulator layer and on the different portion from the insulator layer. One of useful applications is a hybrid semiconductor device having a compound semiconductor formed from e.g. GaAs on a silicon substrate.

    摘要翻译: 化合物半导体器件包括由单晶硅形成的衬底,形成在衬底的表面的一部分上的绝缘体层,至少一层形成在绝缘体层上的高电阻化合物半导体,并且至少 形成在与绝缘体层的衬底表面的不同部分上的化合物半导体的单晶的一层。 该器件可以通过在单晶硅衬底的一个表面上形成绝缘体层并通过在绝缘体层上和绝缘体层的不同部分上的外延生长化合物半导体来制造。 有用的应用之一是具有由例如化合物形成的化合物半导体的混合半导体器件。 GaAs在硅衬底上。