摘要:
An audio signal high frequency component controlled in terms of directivity is reproduced, or an audio signal high frequency component compensated in terms of frequency characteristic or controlled in terms of directivity is reproduced, such that the reflected sound comes from a direction in which the high frequency component is intended to be localized. The sound pressure in a seat where a desired localization effect is not provided due to the arrangement of speakers is compensated such that the interaural amplitude level in the seat is equal to that of another seat. Thus, an equivalent level of localization effect is provided in a plurality of seats, especially for an audio signal high frequency component, without significantly increasing the number of the speakers.
摘要:
This automatic clutch control device selects a normal mode when a road friction coefficient is not less than 0.3 at a disconnecting operation starting point (time t1), selects a little low-speed mode when it is not less than 0.1 but less than 0.3 and selects a low-speed mode when it is less than 0.1. Further, when a vehicle stabilizing control such as a traction control or the like is not executed at the time t1, this device selects the normal mode, while when a vehicle stabilizing control is executed at the time t1, it selects the low-speed mode. Moreover, this device selects a high-speed mode when the vehicle is in a sports running mode at the time t1, while selects the normal mode when the vehicle is not in the sports running mode. A connecting operation of a clutch is performed with a speed corresponding to the selected mode in an automatic clutch connecting/disconnecting control by a clutch connecting/disconnecting actuator upon executing a gear-shift control.
摘要:
The automatic clutch control device controls, regardless of the gear-shift operation, the clutch to be brought into a half-clutch state or to a perfect disconnecting state according to a running state of a vehicle from the following five viewpoints deceleration slip amount of driving wheels RL and RR; a convergence time of a driving wheel speed to the driving wheel in a pressure-down mode during a vehicle stabilizing control (for example, ABS control); a continuation time of a judder vibration; whether the vehicle is in a spinning state or not; and whether there is a possibility that an engine stall occurs during a traction control. As a result, this device can attain at least one or more objects of the improvement in stability of the vehicle, improvement in precision of the vehicle stabilizing control, improvement of comfortableness of the occupant and prevention of the occurrence of the engine stall.
摘要:
A semiconductor device of a pin junction structure, constituted by a quantum-wave interference layers Q1 to Q4 with plural periods of a pair of a first layer W and a second layer B and middle layers (carrier accumulation layers) C1 to C3. The second layer B has wider band gap than the first layer W. Each thicknesses of the first layer W and the second layer B is determined by multiplying by an odd number one fourth of wavelength of quantum-wave of carriers conducted in the i-layer in each of the first layer W and the second layer B existing at the level near the lowest energy level of the second layer B. A &dgr; layer, for sharply varying energy band, is formed at an every interface between the first layer W and the second layer B and has a thickness substantially thinner than the first layer W and the second layer B. Then quantum-wave interference layers and carrier accumulation layers are formed in series. As a result, a hysterisis characteristic that the device has different values of voltage when the electric current rises and decreases abruptly with a step function, or when the current-voltage characteristic varies with a step function can be found.
摘要:
An emission layer is formed in a p-layer, and an electron reflecting layer and a hole reflecting layer are formed sandwiching the emission layer. Each of the electron reflecting layer and the hole reflecting layer is constituted by a quantum-wave interference layer with plural periods of a pair of a first layer W and a second layer B. Thicknesses of the first and the second layers in the electron reflecting layer are determined by multiplying by an odd number one fourth of a quantum-wave wavelength of electrons in each of the first and the second layers, and each thicknesses of the first and the second layers in the hole reflecting layer are determined by multiplying by an odd number one fourth of a quantum-wave wavelength of holes in each of the first and the second layers. A luminous efficiency of the LED is improved by electron-hole pairs. The structure in which the emission layer is sandwiched by the electron reflecting layer and the hole reflecting layer is an alternative of a structure in which an i-layer is sandwiched by an n-cladding layer and a p-cladding layer. The emission layer can be formed in a p-layer, and the hole reflecting layer can be formed in an n-layer, an n−-layer or a p−-layer.
摘要:
A pin diode, having a p-layer, an n-layer, and an i-layer sandwiched by the p-layer and the n-layer, is constituted by a quantum-wave interference unit with a plurality of pairs of a first layer W and a second layer B. The second layer B has a wider band gap than the first layer W. Each thickness of the first layer W and the second layer b is determined by multiplying by odd number one fourth of quantum-wave wavelength of carriers in each of the first layer W and the second layer B. A &dgr; layer sharply varying in band gap energy from the first and second layers is formed at every interface between the first layer W and the second layer B and has a thickness substantially thinner than the first layer W and the second layer B. A plurality of quantum-wave interference units are formed sandwiching carrier accumulation layers in series. Then, the I-V characteristic of the diode indicates that, for values of an applied backward voltage, a backward electric current can flow rapidly.
摘要:
Using a writing implement model defined in the O-XYZ coordinate system a character or graphic form is generated on a writing plane model (O-XY plane) defined in the O-XYZ coordinate system. A control polygon for a character or graphical form to be generated is designed in advance in the O-XYZ coordinate system and a smooth writing motion model is generated using local basis functions that are weighted by the coordinate values of the respective vertices of that control polygon. The position component of the writing motion model represents variations in the position of a representative point of the writing implement model in the O-XYZ coordinate system with respect to time, and the posture component of the writing motion model represents time-variations of its inclination in the O-XYZ coordinate system with respect to the O-XYZ coordinate system. The writing implement model and the writing plane model intersect at a time, thereby forming a character segment. If character segments are generated at regular intervals between the start point and the end point of the writing motion, then the entire image of a character or graphic form will be obtained automatically.
摘要:
A high pressure fuel supply pump comprises a cylinder, the upper part of which is exposed to the outside of a head cover that is a part of the engine housing, and is fixed to the head cover by means of bolts, not shown. The remaining portion of the high pressure fuel supply pump is received in an accommodation hole of the head cover. A pump cam 111 is mounted to a valve camshaft for driving a suction/exhaust valve and drives the high pressure fuel supply pump. The use of an exclusive shaft for pump driving only, a bearing member therefor, and the like is rendered unnecessary, which enables a reduction in the number of parts employed. Further, since the timing with which the pressurized fuel is discharged is controlled through the operation of a solenoid valve, the precision with which fuel injection is controlled is improved.
摘要:
A fuel injection valve of a diesel engine, comprising a valve body including a concave conical surface in the tip portion of the valve body, and fuel injection holes extending from the concave surface to the outside of the valve body, and a needle valve movable in the valve body and including a cylindrical shaft portion, a first conical surface adjacent to the shaft portion and having a conical angle smaller than that of the concave surface, the lower edge of the first conical surface defining a contact line separably contacting with the concave surface, a second conical surface adjacent to the first surface and having a conical angle substantially equal to that of the concave surface, a third conical surface adjacent to the second surface and having a conical angle greater than that of the concave surface. In case of a smaller lift amount of the needle valve, the fuel flow speed flowing into the fuel injection hole is fast and the atomized fuel injection divergence angle from the injection hole is great, thereby producing active producing mixing of the fuel with the air and enhancing the ignition feature, while in case of a greater lift amount, the fuel flow speed is slow and the atomized fuel injection divergence angle from the injection hole is small, thereby increasing the fuel flow reach and producing an active mixing of the fuel with the air by virtue of the kinetic energy of the atomized fuel flow.
摘要:
A compound semiconductor device comprises a substrate formed from a single crystal of silicon, a layer of an insulator formed on a portion of a surface of the substrate, at least one layer of a high resistance compound semiconductor formed on the insulator layer, and at least one layer of a single crystal of a compound semiconductor formed on a different portion of the substrate surface from the insulator layer. The device can be manufactured by forming an insulator layer on one portion of a surface of a single crystal silicon substrate, and growing a compound semiconductor by epitaxy on the insulator layer and on the different portion from the insulator layer. One of useful applications is a hybrid semiconductor device having a compound semiconductor formed from e.g. GaAs on a silicon substrate.