公开(公告)号：US20080199613A1

公开(公告)日：2008-08-21

申请号：US11709509

申请日：2007-02-21

申请人： Vishwanath Bhat ,  Gordon Morrison

发明人： Vishwanath Bhat ,  Gordon Morrison

IPC分类号： C23C16/00

CPC分类号： C23C16/4412 ,  C23C16/4408 ,  C23C16/45523

摘要： One embodiment thermal chemical vapor deposition method includes exposing a substrate within a chamber to first and second deposition precursors effective to thermally chemical vapor deposit a material on the substrate, and exhausting unreacted first and second deposition precursors from the chamber through a vacuum pump via a first exhaust line comprising a filter. A reactive gas is flowed to the material on the substrate, with the reactive gas being reactive with the material. After flowing the reactive gas, an inert purge gas is flowed through the chamber and through the vacuum pump. The flowing of the inert purge gas to the vacuum pump is through a second exhaust line not comprising the filter. The exposing, the flowing of the reactive gas, and the flowing of the inert purge gas are repeated effective to deposit material of desired thickness on the substrate.

摘要翻译： 一个实施方案的热化学气相沉积方法包括将室内的衬底暴露于第一和第二沉积前体，其有效地将化学气相沉积到衬底上的材料，以及通过真空泵经由第一 排气管线包括过滤器。 反应性气体流到衬底上的材料，反应气体与材料反应。 在流动反应气体后，惰性吹扫气体流过腔室并通过真空泵。 惰性吹扫气体流入真空泵是通过不包括过滤器的第二排气管线。 重复有效地将曝光，反应气体的流动和惰性吹扫气体的流动重叠在基板上沉积所需厚度的材料。

公开(公告)号：US20080014694A1

公开(公告)日：2008-01-17

申请号：US11488587

申请日：2006-07-17

申请人： Vishwanath Bhat ,  Noel Rocklein ,  F. Daniel Gealy

发明人： Vishwanath Bhat ,  Noel Rocklein ,  F. Daniel Gealy

IPC分类号： H01L21/8244

CPC分类号： H01L28/60 ,  Y10T29/417

摘要： A method of forming a capacitor includes forming a conductive first capacitor electrode material comprising TiN over a substrate. TiN of the TiN-comprising material is oxidized effective to form conductive TiOxNy having resistivity no greater than 1 ohm·cm over the TiN-comprising material where x is greater than 0 and y is from 0 to 1.4. A capacitor dielectric is formed over the conductive TiOxNy. Conductive second capacitor electrode material is formed over the capacitor dielectric. Other aspects and implementations are contemplated, including capacitors independent of method of fabrication.

摘要翻译： 形成电容器的方法包括在衬底上形成包含TiN的导电的第一电容器电极材料。 含TiN材料的TiN被有效氧化，以形成电阻率不大于1欧姆·厘米的导电性TiO 2，其中x越大 0和y为0至1.4。 电容器电介质形成在导电TiO 2上。 在电容器电介质上形成导电的第二电容器电极材料。 考虑了其他方面和实现方式，包括独立于制造方法的电容器。

公开(公告)号：US20070238259A1

公开(公告)日：2007-10-11

申请号：US11402018

申请日：2006-04-10

申请人： Vishwanath Bhat ,  Niraj Rana ,  Shyam Surthi

发明人： Vishwanath Bhat ,  Niraj Rana ,  Shyam Surthi

IPC分类号： H01L21/20

CPC分类号： H01L28/91 ,  H01L27/10852

摘要： A method of forming a plurality of capacitors includes an insulative material received over a capacitor array area and a circuitry area. The array area comprises a plurality of capacitor electrode openings within the insulative material received over individual capacitor storage node locations. The intervening area comprises a trench. Conductive material is formed within the openings and against a sidewall portion of the trench to less than completely fill the trench. Conductive material received over the trench sidewall portion is covered with a silicon nitride-comprising layer which less than fills remaining trench volume. The insulative material within the array area and the silicon nitride-comprising layer are etched with a liquid etching solution effective to expose outer sidewall portions of the conductive material within the array area and to expose the conductive material within the trench. The conductive material within the array area is incorporated into a plurality of capacitors.

摘要翻译： 形成多个电容器的方法包括在电容器阵列区域和电路区域上接收的绝缘材料。 阵列区域包括在单独的电容器存储节点位置处接收的绝缘材料内的多个电容器电极开口。 中间区域包括沟槽。 导电材料形成在开口内并抵靠沟槽的侧壁部分，以小于完全填充沟槽。 接收在沟槽侧壁部分上的导电材料覆盖有少于填充剩余沟槽体积的含氮化硅的层。 阵列区域内的绝缘材料和含氮化硅的层用液体蚀刻溶液进行蚀刻，该液体蚀刻溶液有效地暴露阵列区域内的导电材料的外侧壁部分，并露出沟槽内的导电材料。 阵列区域内的导电材料被并入多个电容器中。

公开(公告)号：US07115929B2

公开(公告)日：2006-10-03

申请号：US10822062

申请日：2004-04-08

申请人： Vishwanath Bhat ,  F. Daniel Gealy ,  Cancheepuram V. Srividya

发明人： Vishwanath Bhat ,  F. Daniel Gealy ,  Cancheepuram V. Srividya

IPC分类号： H01L29/72

CPC分类号： H01L28/56 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L28/40

摘要： The invention includes constructions having two dielectric layers over a conductively-doped semiconductive material. One of the dielectric layers contains aluminum oxide, and the other contains a metal oxide other than aluminum oxide (such metal oxide can be, for example, one or more of hafnium oxide, tantalum oxide, titanium oxide and zirconium oxide). The layer containing aluminum oxide is between the layer containing metal oxide and the conductively-doped semiconductive material. The invention includes capacitor devices having one electrode containing conductively-doped silicon and another electrode containing one or more metals and/or metal compounds. At least two dielectric layers are formed between the two capacitor electrodes, with one of the dielectric layers containing aluminum oxide and the other containing a metal oxide other than aluminum oxide. The invention also includes methods of forming capacitor constructions.

摘要翻译： 本发明包括在导电掺杂的半导体材料上具有两个电介质层的结构。 电介质层中的一层包含氧化铝，另外含有氧化铝以外的金属氧化物（例如，氧化铪，氧化钽，氧化钛，氧化锆等中的一种或多种）。 含有氧化铝的层位于含金属氧化物层和导电掺杂半导体材料之间。 本发明包括具有一个含有导电掺杂硅的电极和含有一种或多种金属和/或金属化合物的另一电极的电容器器件。 在两个电容器电极之间形成至少两个电介质层，其中一个电介质层包含氧化铝，另一个包含除氧化铝之外的金属氧化物。 本发明还包括形成电容器结构的方法。

公开(公告)号：US07056784B2

公开(公告)日：2006-06-06

申请号：US10914824

申请日：2004-08-09

申请人： Vishwanath Bhat ,  Chris M. Carlson ,  F. Daniel Gealy

发明人： Vishwanath Bhat ,  Chris M. Carlson ,  F. Daniel Gealy

IPC分类号： H01L21/8242

CPC分类号： H01G4/085 ,  H01G4/1272 ,  H01G4/33 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/31616 ,  H01L21/31683 ,  H01L28/40

摘要： A method of forming a capacitor includes forming a conductive metal first electrode layer over a substrate, with the conductive metal being oxidizable to a higher degree at and above an oxidation temperature as compared to any degree of oxidation below the oxidation temperature. At least one oxygen containing vapor precursor is fed to the conductive metal first electrode layer below the oxidation temperature under conditions effective to form a first portion oxide material of a capacitor dielectric region over the conductive metal first electrode layer. At least one vapor precursor is fed over the first portion at a temperature above the oxidation temperature effective to form a second portion oxide material of the capacitor dielectric region over the first portion. The oxide material of the first portion and the oxide material of the second portion are common in chemical composition. A conductive second electrode layer is formed over the second portion oxide material of the capacitor dielectric region.

摘要翻译： 形成电容器的方法包括在衬底上形成导电金属第一电极层，与氧化温度以下的任何氧化程度相比，导电金属可在氧化温度以上高于可氧化的程度。 在导电金属第一电极层上有效形成电容器电介质区域的第一部分氧化物材料的条件下，在氧化温度以下将至少一种含氧气体前体供给至导电金属第一电极层。 至少一种蒸气前体在高于氧化温度的温度下在第一部分上进料，有效地在第一部分上形成电容器电介质区域的第二部分氧化物材料。 第一部分的氧化物材料和第二部分的氧化物材料在化学组成中是常见的。 在电容器电介质区域的第二部分氧化物材料上形成导电的第二电极层。

公开(公告)号：US20110300721A1

公开(公告)日：2011-12-08

申请号：US13210836

申请日：2011-08-16

申请人： Vishwanath Bhat ,  Rishikesh Krishnan ,  Daniel Gealy

发明人： Vishwanath Bhat ,  Rishikesh Krishnan ,  Daniel Gealy

IPC分类号： H01L21/31 ,  B05D5/12

CPC分类号： C23C16/405 ,  C30B25/02 ,  C30B29/16 ,  H01G4/33 ,  H01G9/0032 ,  H01L28/65

摘要： There is disclosed a method of forming crystalline tantalum pentoxide on a ruthenium-containing material having an oxygen-containing surface wherein the oxygen-containing surface is contacted with a treating composition, such as water, to remove at least some oxygen. Crystalline tantalum pentoxide is formed on at least a portion of the surface having reduced oxygen content.

摘要翻译： 公开了在具有含氧表面的含钌材料上形成结晶五氧化钽的方法，其中含氧表面与处理组合物如水接触以除去至少一些氧。 在具有降低的氧含量的表面的至少一部分上形成五氧化二钽结晶。

公开(公告)号：US07976897B2

公开(公告)日：2011-07-12

申请号：US11709509

申请日：2007-02-21

申请人： Vishwanath Bhat ,  Gordon Morrison

发明人： Vishwanath Bhat ,  Gordon Morrison

IPC分类号： C23C16/00

CPC分类号： C23C16/4412 ,  C23C16/4408 ,  C23C16/45523

摘要： One embodiment thermal chemical vapor deposition method includes exposing a substrate within a chamber to first and second deposition precursors effective to thermally chemical vapor deposit a material on the substrate, and exhausting unreacted first and second deposition precursors from the chamber through a vacuum pump via a first exhaust line comprising a filter. A reactive gas is flowed to the material on the substrate, with the reactive gas being reactive with the material. After flowing the reactive gas, an inert purge gas is flowed through the chamber and through the vacuum pump. The flowing of the inert purge gas to the vacuum pump is through a second exhaust line not comprising the filter. The exposing, the flowing of the reactive gas, and the flowing of the inert purge gas are repeated effective to deposit material of desired thickness on the substrate.

摘要翻译： 一个实施方案的热化学气相沉积方法包括将室内的衬底暴露于第一和第二沉积前体，其有效地将化学气相沉积到衬底上的材料，以及通过真空泵经由第一 排气管线包括过滤器。 反应性气体流到衬底上的材料，反应气体与材料反应。 在流动反应气体后，惰性吹扫气体流过腔室并通过真空泵。 惰性吹扫气体流入真空泵是通过不包括过滤器的第二排气管线。 重复有效地将曝光，反应气体的流动和惰性吹扫气体的流动重叠在基板上沉积所需厚度的材料。

公开(公告)号：US20110013972A1

公开(公告)日：2011-01-20

申请号：US12822158

申请日：2010-06-23

申请人： Philippe Roy ,  Peter Driessen ,  Vishwanath Bhat

发明人： Philippe Roy ,  Peter Driessen ,  Vishwanath Bhat

IPC分类号： F16B7/14 ,  B23P11/00

CPC分类号： B64D11/0696 ,  Y10T29/49947 ,  Y10T403/32467

摘要： Embodiments of the present invention include a track fitting assembly comprising a main body, at least one pre-loaded stud assembly, and a track comprising a pair of lips. The at least one pre-loaded stud assembly comprises a stud and a compressing device. The at least one pre-loaded stud assembly comprises a clamped position, wherein the stud is coupled to the pair of lips and does not contact the compressing device. The at least one pre-loaded stud assembly also comprises an unclamped position, wherein the stud contacts the compressing device and does not contact the pair of lips. Other embodiments include the main body, at least one shear plunger assembly, and the track comprising the pair of lips, where the pair of lips comprise at least one circular opening. The at least one shear plunger assembly comprises a shear pin and a button. The at least one shear pin assembly comprises an disengaged position, wherein the button extends from the main body and the shear pin is positioned within the main body. The at least one shear plunger assembly also comprises an engaged position, wherein the button is positioned flush with the main body and the shear pin is extended from the main body and within the at least one circular opening.

摘要翻译： 本发明的实施例包括轨道装配组件，其包括主体，至少一个预加载螺柱组件和包括一对唇缘的轨道。 所述至少一个预加载螺柱组件包括螺柱和压缩装置。 所述至少一个预加载螺柱组件包括夹紧位置，其中所述螺柱联接到所述一对唇缘并且不接触所述压缩装置。 所述至少一个预加载螺柱组件还包括未夹紧位置，其中所述螺柱接触所述压缩装置并且不接触所述一对唇缘。 其他实施例包括主体，至少一个剪切柱塞组件和包括一对唇缘的轨道，其中该对唇缘包括至少一个圆形开口。 所述至少一个剪切柱塞组件包括剪切销和按钮。 所述至少一个剪切销组件包括脱离位置，其中所述按钮从所述主体延伸并且所述剪切销位于所述主体内。 所述至少一个剪切柱塞组件还包括接合位置，其中所述按钮与所述主体齐平并且所述剪切销从所述主体延伸并且在所述至少一个圆形开口内延伸。

公开(公告)号：US20100090309A1

公开(公告)日：2010-04-15

申请号：US12251733

申请日：2008-10-15

申请人： Noel Rocklein ,  Chris M. Carlson ,  Dave Peterson ,  Cunyu Yang ,  Praveen Vaidyanathan ,  Vishwanath Bhat

发明人： Noel Rocklein ,  Chris M. Carlson ,  Dave Peterson ,  Cunyu Yang ,  Praveen Vaidyanathan ,  Vishwanath Bhat

IPC分类号： H01L29/92 ,  H01L21/31 ,  H01L23/58

CPC分类号： H01L21/28273 ,  H01L21/02175 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/3142 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/91 ,  H01L29/51 ,  H01L29/513 ,  H01L29/78

摘要： Some embodiments include dielectric structures. The structures include first and second portions that are directly against one another. The first portion may contain a homogeneous mixture of a first phase and a second phase. The first phase may have a dielectric constant of greater than or equal to 25, and the second phase may have a dielectric constant of less than or equal to 20. The second portion may be entirely a single composition having a dielectric constant of greater than or equal to 25. Some embodiments include electrical components, such as capacitors and transistors, containing dielectric structures of the type described above. Some embodiments include methods of forming dielectric structures, and some embodiments include methods of forming electrical components.

摘要翻译： 一些实施例包括电介质结构。 这些结构包括彼此直接相对的第一和第二部分。 第一部分可以包含第一相和第二相的均匀混合物。 第一相可以具有大于或等于25的介电常数，并且第二相可以具有小于或等于20的介电常数。第二部分可以是完全是具有大于或等于20的介电常数的单一组成， 等于25.一些实施例包括包含上述类型的电介质结构的电气部件，例如电容器和晶体管。 一些实施方案包括形成电介质结构的方法，并且一些实施方案包括形成电组件的方法。

公开(公告)号：US07618874B1

公开(公告)日：2009-11-17

申请号：US12114124

申请日：2008-05-02

申请人： Kevin Shea ,  Brett Busch ,  Farrell Good ,  Irina Vasilyeva ,  Vishwanath Bhat

发明人： Kevin Shea ,  Brett Busch ,  Farrell Good ,  Irina Vasilyeva ,  Vishwanath Bhat

IPC分类号： H01L21/20 ,  H01L21/108

CPC分类号： H01L27/10852 ,  H01L27/10894 ,  H01L28/91 ,  Y10T156/10

摘要： A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being received within the opening above the shield and a void being received within the opening below the shield. The shield comprises a nitride. Etching is conducted within the opening through the nitride-comprising shield. After the etching, a first capacitor electrode is formed within the opening in electrical connection with the node location. A capacitor dielectric and a second capacitor electrode are formed operatively adjacent the first capacitor electrode. Other aspects and implementations are contemplated.

摘要翻译： 形成电容器的方法包括在衬底上的节点位置上提供其中具有开口的材料。 在开口内和横过开口设置有屏蔽件，空隙被容纳在屏蔽件上方的开口内，并且在屏蔽件下面的开口内容纳有空隙。 屏蔽包括氮化物。 通过包含氮化物的护罩在开口内进行蚀刻。 在蚀刻之后，在开口内形成与节点位置电连接的第一电容器电极。 与第一电容器电极可操作地形成电容器电介质和第二电容器电极。 考虑了其他方面和实现。