公开(公告)号：US20110013972A1

公开(公告)日：2011-01-20

申请号：US12822158

申请日：2010-06-23

申请人： Philippe Roy ,  Peter Driessen ,  Vishwanath Bhat

发明人： Philippe Roy ,  Peter Driessen ,  Vishwanath Bhat

IPC分类号： F16B7/14 ,  B23P11/00

CPC分类号： B64D11/0696 ,  Y10T29/49947 ,  Y10T403/32467

摘要： Embodiments of the present invention include a track fitting assembly comprising a main body, at least one pre-loaded stud assembly, and a track comprising a pair of lips. The at least one pre-loaded stud assembly comprises a stud and a compressing device. The at least one pre-loaded stud assembly comprises a clamped position, wherein the stud is coupled to the pair of lips and does not contact the compressing device. The at least one pre-loaded stud assembly also comprises an unclamped position, wherein the stud contacts the compressing device and does not contact the pair of lips. Other embodiments include the main body, at least one shear plunger assembly, and the track comprising the pair of lips, where the pair of lips comprise at least one circular opening. The at least one shear plunger assembly comprises a shear pin and a button. The at least one shear pin assembly comprises an disengaged position, wherein the button extends from the main body and the shear pin is positioned within the main body. The at least one shear plunger assembly also comprises an engaged position, wherein the button is positioned flush with the main body and the shear pin is extended from the main body and within the at least one circular opening.

摘要翻译： 本发明的实施例包括轨道装配组件，其包括主体，至少一个预加载螺柱组件和包括一对唇缘的轨道。 所述至少一个预加载螺柱组件包括螺柱和压缩装置。 所述至少一个预加载螺柱组件包括夹紧位置，其中所述螺柱联接到所述一对唇缘并且不接触所述压缩装置。 所述至少一个预加载螺柱组件还包括未夹紧位置，其中所述螺柱接触所述压缩装置并且不接触所述一对唇缘。 其他实施例包括主体，至少一个剪切柱塞组件和包括一对唇缘的轨道，其中该对唇缘包括至少一个圆形开口。 所述至少一个剪切柱塞组件包括剪切销和按钮。 所述至少一个剪切销组件包括脱离位置，其中所述按钮从所述主体延伸并且所述剪切销位于所述主体内。 所述至少一个剪切柱塞组件还包括接合位置，其中所述按钮与所述主体齐平并且所述剪切销从所述主体延伸并且在所述至少一个圆形开口内延伸。

公开(公告)号：US08602702B2

公开(公告)日：2013-12-10

申请号：US13354754

申请日：2012-01-20

申请人： Philippe Roy ,  Peter Driessen ,  Vishwanath Bhat

发明人： Philippe Roy ,  Peter Driessen ,  Vishwanath Bhat

IPC分类号： B61D45/00 ,  A47B7/00

CPC分类号： B64D11/0696 ,  B60N2/01525 ,  B60N2/01575

摘要： Described are track fitting assemblies having a main body with at least one plunger aperture, at least one button aperture intersecting the at least one plunger aperture, and at least one disengagement recess, at least one shear plunger assembly having a plunger, a shear pin, a plunger-spring, and a button comprising a recess, and a track with a pair of lips having at least one opening. The shear plunger assembly is configured to have a disengaged position, wherein the button is extended from the main body and the shear pin is positioned within the main body, and an engaged position, wherein the button is positioned substantially flush with the main body, the recess of the button is positioned substantially flush with the disengagement recess of the main body, and the shear pin is extended from the main body and within the at least one opening.

摘要翻译： 描述的是轨道装配组件，其具有具有至少一个柱塞孔的主体，与至少一个柱塞孔相交的至少一个按钮孔，以及至少一个分离凹槽，至少一个剪切柱塞组件，其具有柱塞，剪切销， 柱塞弹簧和包括凹部的按钮以及具有至少一个开口的一对唇部的轨道。 剪切柱塞组件构造成具有脱离位置，其中按钮从主体延伸并且剪切销定位在主体内以及接合位置，其中按钮基本上与主体齐平， 按钮的凹部被定位成与主体的脱离凹槽基本齐平，并且剪切销从主体延伸并且在至少一个开口内延伸。

公开(公告)号：US08371781B2

公开(公告)日：2013-02-12

申请号：US12822158

申请日：2010-06-23

申请人： Philippe Roy ,  Peter Driessen ,  Vishwanath Bhat

发明人： Philippe Roy ,  Peter Driessen ,  Vishwanath Bhat

IPC分类号： B60P7/08

CPC分类号： B64D11/0696 ,  Y10T29/49947 ,  Y10T403/32467

摘要： Described are track fitting assemblies having a main body, at least one pre-loaded stud assembly, and a track comprising a pair of lips. The at least one pre-loaded stud assembly includes a stud and a compressing device, wherein the stud does not contact the compressing device in a clamped position and does not contact the pair of lips in an unclamped position. As examples, track fitting assemblies also include at least one shear plunger assembly having a shear pin and a button, wherein the button extends from the main body and the shear pin is positioned within the main body in a disengaged position, and the button is positioned flush with the main body and the shear pin is extended from the main body in an engaged position.

摘要翻译： 描述的是具有主体，至少一个预加载螺柱组件和包括一对唇缘的轨道的轨道装配组件。 所述至少一个预加载螺柱组件包括螺柱和压缩装置，其中所述螺柱在夹紧位置不接触所述压缩装置，并且在未夹紧位置不接触所述一对唇缘。 作为示例，轨道装配组件还包括至少一个具有剪切销和按钮的剪切柱塞组件，其中按钮从主体延伸并且剪切销位于主体内处于脱离位置，并且按钮被定位 与主体齐平并且剪切销从主体在接合位置延伸。

公开(公告)号：US20120235011A1

公开(公告)日：2012-09-20

申请号：US13354754

申请日：2012-01-20

申请人： PHILIPPE ROY ,  Peter Driessen ,  Vishwanath Bhat

发明人： PHILIPPE ROY ,  Peter Driessen ,  Vishwanath Bhat

IPC分类号： B60N2/005

CPC分类号： B64D11/0696 ,  B60N2/01525 ,  B60N2/01575

摘要： Described are track fitting assemblies having a main body with at least one plunger aperture, at least one button aperture intersecting the at least one plunger aperture, and at least one disengagement recess, at least one shear plunger assembly having a plunger, a shear pin, a plunger-spring, and a button comprising a recess, and a track with a pair of lips having at least one opening. The shear plunger assembly is configured to have a disengaged position, wherein the button is extended from the main body and the shear pin is positioned within the main body, and an engaged position, wherein the button is positioned substantially flush with the main body, the recess of the button is positioned substantially flush with the disengagement recess of the main body, and the shear pin is extended from the main body and within the at least one opening.

摘要翻译： 描述的是轨道装配组件，其具有具有至少一个柱塞孔的主体，与至少一个柱塞孔相交的至少一个按钮孔，以及至少一个分离凹槽，至少一个剪切柱塞组件，其具有柱塞，剪切销， 柱塞弹簧和包括凹部的按钮以及具有至少一个开口的一对唇部的轨道。 剪切柱塞组件构造成具有脱离位置，其中按钮从主体延伸并且剪切销定位在主体内以及接合位置，其中按钮基本上与主体齐平， 按钮的凹部被定位成与主体的脱离凹槽基本齐平，并且剪切销从主体延伸并且在至少一个开口内延伸。

公开(公告)号：US08951903B2

公开(公告)日：2015-02-10

申请号：US13366025

申请日：2012-02-03

申请人： Dan Gealy ,  Vishwanath Bhat ,  Cancheepuram V. Srividya ,  M. Noel Rocklein

发明人： Dan Gealy ,  Vishwanath Bhat ,  Cancheepuram V. Srividya ,  M. Noel Rocklein

IPC分类号： H01L21/3205 ,  H01L21/31 ,  H01L21/28 ,  C23C16/455 ,  H01L21/314 ,  H01L21/316 ,  H01L29/51 ,  H01L49/02 ,  H01L29/78

CPC分类号： H01L21/022 ,  C23C16/45529 ,  H01L21/02148 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/28194 ,  H01L21/3141 ,  H01L21/3142 ,  H01L21/31641 ,  H01L21/31645 ,  H01L28/40 ,  H01L28/56 ,  H01L29/517 ,  H01L29/78

摘要： Graded dielectric layers and methods of fabricating such dielectric layers provide dielectrics in a variety of electronic structures for use in a wide range of electronic devices and systems. In an embodiment, a dielectric layer is graded with respect to a doping profile across the dielectric layer. In an embodiment, a dielectric layer is graded with respect to a crystalline structure profile across the dielectric layer. In an embodiment, a dielectric layer is formed by atomic layer deposition incorporating sequencing techniques to generate a doped dielectric material.

摘要翻译： 梯度介电层和制造这种电介质层的方法在各种电子结构中提供电介质以用于广泛的电子设备和系统。 在一个实施例中，电介质层相对于跨介电层的掺杂分布而分级。 在一个实施例中，电介质层相对于介电层上的晶体结构分布呈梯度分布。 在一个实施例中，通过包含测序技术的原子层沉积形成电介质层以产生掺杂的电介质材料。

公开(公告)号：US08940388B2

公开(公告)日：2015-01-27

申请号：US13038605

申请日：2011-03-02

申请人： Vassil Antonov ,  Jennifer K. Sigman ,  Vishwanath Bhat ,  Matthew N. Rocklein ,  Bhaskar Srinivasan ,  Chris Carlson

发明人： Vassil Antonov ,  Jennifer K. Sigman ,  Vishwanath Bhat ,  Matthew N. Rocklein ,  Bhaskar Srinivasan ,  Chris Carlson

IPC分类号： B32B7/02 ,  H01G4/33 ,  H01G4/30 ,  H01G4/12

CPC分类号： H01L28/40 ,  H01G4/1209 ,  H01G4/1218 ,  H01G4/1236 ,  H01G4/1254 ,  H01G4/1272 ,  H01G4/306 ,  H01G4/33 ,  H01L21/02172 ,  H01L21/02356 ,  H01L21/225 ,  Y10T428/2495

摘要： Methods of forming an insulative element are described, including forming a first metal oxide material having a first dielectric constant, forming a second metal oxide material having a second dielectric constant different from the first, and heating at least portions of the structure to crystallize at least a portion of at least one of the first dielectric material and the second dielectric material. Methods of forming a capacitor are described, including forming a first electrode, forming a dielectric material with a first oxide and a second oxide over the first electrode, and forming a second electrode over the dielectric material. Structures including dielectric materials are also described.

摘要翻译： 描述了形成绝缘元件的方法，包括形成具有第一介电常数的第一金属氧化物材料，形成具有与第一介电常数不同的第二介电常数的第二金属氧化物材料，并加热该结构的至少部分至少结晶 第一电介质材料和第二电介质材料中的至少一个的一部分。 描述了形成电容器的方法，包括形成第一电极，在第一电极上形成具有第一氧化物和第二氧化物的介电材料，以及在电介质材料上形成第二电极。 还描述了包括电介质材料的结构。

公开(公告)号：US08760845B2

公开(公告)日：2014-06-24

申请号：US13370312

申请日：2012-02-10

申请人： Noel Rocklein ,  Vishwanath Bhat ,  Chris Carlson

发明人： Noel Rocklein ,  Vishwanath Bhat ,  Chris Carlson

IPC分类号： H01G4/06 ,  H01G4/10

CPC分类号： H01L28/40 ,  H01L21/02159

摘要： A capacitor structure includes a storage node; a capacitor dielectric on the storage node; and a plate electrode on the capacitor dielectric. The capacitor dielectric may include a Si-doped ZrO2 layer or crystalline ZrSiOx with a Si/(Zr+Si) content ranging between 4-9% by atomic ratio. The capacitor structure further includes an interfacial TiO2/TiON layer between the storage node and the capacitor dielectric.

摘要翻译： 电容器结构包括存储节点; 存储节点上的电容器电介质; 和电容器电介质上的平板电极。 电容器电介质可以包括Si掺杂的ZrO 2层或Si /（Zr + Si）含量在4-9％原子比范围内的结晶ZrSiO x。 电容器结构还包括存储节点和电容器电介质之间的界面TiO 2 / TiON层。

公开(公告)号：US08518486B2

公开(公告)日：2013-08-27

申请号：US12778893

申请日：2010-05-12

申请人： Nik Mirin ,  Tsai-Yu Huang ,  Vishwanath Bhat ,  Chris Carlson ,  Vassil Antonov

发明人： Nik Mirin ,  Tsai-Yu Huang ,  Vishwanath Bhat ,  Chris Carlson ,  Vassil Antonov

IPC分类号： C23C16/00

CPC分类号： H01L21/02186 ,  C01G23/04 ,  C23C16/405 ,  C23C16/45534 ,  H01G4/085 ,  H01G4/1227 ,  H01G4/33 ,  H01L21/02233 ,  H01L21/02244 ,  H01L21/28556 ,  H01L21/32051 ,  H01L23/367 ,  H01L23/3735 ,  H01L23/3736 ,  H01L27/10808 ,  H01L27/1085 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/60 ,  H01L2924/0002 ,  H05K1/0203 ,  Y10T428/24802 ,  Y10T428/24975 ,  H01L2924/00

摘要： Some embodiments include methods of forming rutile-type titanium oxide. A monolayer of titanium nitride may be formed. The monolayer of titanium nitride may then be oxidized at a temperature less than or equal to about 550° C. to convert it into a monolayer of rutile-type titanium oxide. Some embodiments include methods of forming capacitors that have rutile-type titanium oxide dielectric, and that have at least one electrode comprising titanium nitride. Some embodiments include thermally conductive stacks that contain titanium nitride and rutile-type titanium oxide, and some embodiments include methods of forming such stacks.

摘要翻译： 一些实施方案包括形成金红石型氧化钛的方法。 可以形成单层的氮化钛。 然后氮化钛单层可以在小于或等于约550℃的温度下被氧化，以将其转化为金红石型氧化钛的单层。 一些实施方案包括形成具有金红石型氧化钛电介质的电容器并且具有至少一个包含氮化钛的电极的方法。 一些实施方案包括含有氮化钛和金红石型氧化钛的导热叠层，并且一些实施方案包括形成这种叠层的方法。

公开(公告)号：US20130208403A1

公开(公告)日：2013-08-15

申请号：US13370312

申请日：2012-02-10

申请人： Noel Rocklein ,  Vishwanath Bhat ,  Chris Carlson

发明人： Noel Rocklein ,  Vishwanath Bhat ,  Chris Carlson

IPC分类号： H01G4/10 ,  C09D1/00

CPC分类号： H01L28/40 ,  H01L21/02159

摘要： A capacitor structure includes a storage node; a capacitor dielectric on the storage node; and a plate electrode on the capacitor dielectric. The capacitor dielectric may include a Si-doped ZrO2 layer or crystalline ZrSiOx with a Si/(Zr+Si) content ranging between 4-9% by atomic ratio. The capacitor structure further includes an interfacial TiO2/TiON layer between the storage node and the capacitor dielectric.

摘要翻译： 电容器结构包括存储节点; 存储节点上的电容器电介质; 和电容器电介质上的平板电极。 电容器电介质可以包括Si掺杂的ZrO 2层或Si /（Zr + Si）含量在4-9％原子比范围内的结晶ZrSiO x。 电容器结构还包括存储节点和电容器电介质之间的界面TiO 2 / TiON层。

公开(公告)号：US20120267757A1

公开(公告)日：2012-10-25

申请号：US13090277

申请日：2011-04-20

申请人： Vassil Antonov ,  Vishwanath Bhat ,  Chris Carlson

发明人： Vassil Antonov ,  Vishwanath Bhat ,  Chris Carlson

IPC分类号： H01L29/92 ,  H01L21/04

CPC分类号： H01L28/75 ,  H01L27/10844 ,  H01L28/65

摘要： A method for using a metal bilayer is disclosed. First, a bottom electrode is provided. Second, a dielectric layer which is disposed on and is in direct contact with the lower electrode is provided. Then, a metal bilayer which serves as a top electrode in a capacitor is provided. The metal bilayer is disposed on and is in direct contact with the dielectric layer. The metal bilayer consists of a noble metal in direct contact with the dielectric layer and a metal nitride in direct contact with the noble metal.

摘要翻译： 公开了一种使用金属双层的方法。 首先，设置底部电极。 第二，提供了设置在下电极上并与下电极直接接触的电介质层。 然后，提供用作电容器中的顶部电极的金属双层。 金属双层配置在电介质层上并与电介质层直接接触。 金属双层由与电介质层直接接触的贵金属和与贵金属直接接触的金属氮化物组成。