公开(公告)号：US07938396B2

公开(公告)日：2011-05-10

申请号：US12536755

申请日：2009-08-06

申请人： Keiji Okumura ,  Yoshio Sugishima ,  Yoshihiro Yamaguchi

发明人： Keiji Okumura ,  Yoshio Sugishima ,  Yoshihiro Yamaguchi

IPC分类号： B65H1/08

CPC分类号： B65H3/0607 ,  B65H3/48 ,  B65H3/60 ,  B65H2301/5143 ,  B65H2601/273

摘要： A sheet feeding device has a sheet accommodating portion for accommodating a sheet stack, a sheet carrying plate for carrying the sheet stack and a pickup roller that dispatches the uppermost sheet of the stack. An elevator displaces the sheet carrying plate between a sheet feeding position where an upper face of the sheet stack contacts the pickup roller and a separating position where the upper face of the sheet stack is separated from the pickup roller. A first warm air mechanism blows warm air toward a side face of the sheet stack. A controller causes the first warm air mechanism to blow warm air to the side face of the sheet stack and causes the elevator to displace the sheet carrying plate between the sheet feeding position and the separating position.

摘要翻译： 片材进给装置具有用于容纳片材堆叠的片材容纳部分，用于承载片材堆叠的片材承载板和分配堆叠的最上面的片材的拾取辊。 升降机将片材承载板置于纸张堆叠的上表面接触拾取辊的送纸位置和纸张堆叠的上表面与拾取辊分离的分离位置之间移动。 第一暖空气机构将热空气吹向片材堆叠的侧面。 控制器使得第一暖空气机构将热空气吹送到片材堆叠的侧面，并使电梯在片材进给位置和分离位置之间移动片材承载板。

公开(公告)号：US07917020B2

公开(公告)日：2011-03-29

申请号：US11444467

申请日：2006-06-01

申请人： Makoto Murata ,  Masatomo Kurata ,  Yoshihiro Yamaguchi ,  Brian Clarkson

发明人： Makoto Murata ,  Masatomo Kurata ,  Yoshihiro Yamaguchi ,  Brian Clarkson

IPC分类号： G03B17/00

CPC分类号： H04N5/772 ,  H04N9/8205 ,  H04N21/42202 ,  H04N21/4223 ,  H04N21/4334 ,  H04N21/84 ,  H04N21/8456

摘要： An information processing device includes a processing unit that recognizes an action based on sensor data output by a sensor and obtained in a same timing as a photographing timing of an image string. The processing unit associates information indicating the action as information for a selection of a reproduction position at a time of a reproduction of the image string with the image string. In addition, the processing unit extracts a plurality of features from the sensor data. The processing unit recognizes the action based on a time series of the plurality of features using a model for a recognition.

摘要翻译： 信息处理装置包括：处理单元，其基于由传感器输出的以与图像串的拍摄定时相同的定时获得的传感器数据识别动作。 处理单元将指示动作的信息与图像串再现时的再现位置的选择信息与图像串相关联。 此外，处理单元从传感器数据中提取多个特征。 处理单元使用用于识别的模型，基于多个特征的时间序列来识别动作。

公开(公告)号：US20110059586A1

公开(公告)日：2011-03-10

申请号：US12944632

申请日：2010-11-11

申请人： Miwako AKIYAMA ,  Yusuke Kawaguchi ,  Yoshihiro Yamaguchi

发明人： Miwako AKIYAMA ,  Yusuke Kawaguchi ,  Yoshihiro Yamaguchi

IPC分类号： H01L21/336

CPC分类号： H01L29/7813 ,  H01L21/26586 ,  H01L29/0634 ,  H01L29/0869 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/66727 ,  H01L29/66734

摘要： A semiconductor device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of the first conductivity type provided on a main surface of the first semiconductor layer and having a lower impurity concentration than that of the first semiconductor layer; a third semiconductor layer of a second conductivity type provided on the second semiconductor layer; a fourth semiconductor layer of the first conductivity type selectively provided on the third semiconductor layer; a gate electrode provided in a trench passing through the third semiconductor layer and reaching the second semiconductor layer; a first main electrode contacting the fourth semiconductor layer and contacting the third semiconductor layer through a contact groove provided to pass through the fourth semiconductor layer between the contiguous gate electrodes; a second main electrode provided on an opposite surface to the main surface of the first semiconductor layer; and a fifth semiconductor layer of the second conductivity type provided in an interior portion of the second semiconductor layer corresponding to a part under the contact groove. An uppermost portion of the fifth semiconductor layer contacts the third semiconductor layer, a lowermost portion of the fifth semiconductor layer has a higher impurity concentration than that of the other portion in the fifth semiconductor layer and is located in the second semiconductor layer and not contacting the first semiconductor layer, and the fifth semiconductor layer is narrower from the uppermost portion to the lower most portion.

摘要翻译： 半导体器件包括：第一导电类型的第一半导体层; 第一导电类型的第二半导体层设置在第一半导体层的主表面上并且具有比第一半导体层的杂质浓度低的第二半导体层; 设置在第二半导体层上的第二导电类型的第三半导体层; 选择性地设置在第三半导体层上的第一导电类型的第四半导体层; 设置在穿过所述第三半导体层并到达所述第二半导体层的沟槽中的栅电极; 与所述第四半导体层接触的第一主电极，并且通过设置成在所述连续的栅电极之间穿过所述第四半导体层的接触槽使所述第三半导体层接触; 设置在与所述第一半导体层的主表面相反的表面上的第二主电极; 以及第二导电类型的第五半导体层，设置在与所述接触槽下方的部分对应的所述第二半导体层的内部。 第五半导体层的最上部与第三半导体层接触，第五半导体层的最下部分的杂质浓度比第五半导体层中的其他部分杂质浓度高，位于第二半导体层中， 第一半导体层，第五半导体层从最上部到最下部较窄。

公开(公告)号：US07884847B2

公开(公告)日：2011-02-08

申请号：US11700736

申请日：2007-01-31

申请人： Tamaki Kojima ,  Yoshihiro Yamaguchi ,  Mikio Sakemoto ,  Katsuhiro Takematsu

发明人： Tamaki Kojima ,  Yoshihiro Yamaguchi ,  Mikio Sakemoto ,  Katsuhiro Takematsu

IPC分类号： H04N7/00 ,  H04N5/225 ,  H04N5/232

CPC分类号： G06F17/30256 ,  G06F17/30017 ,  G06F17/30247 ,  G06F17/3028 ,  G06K9/00268 ,  G06K9/00288 ,  G06K9/46 ,  G06K9/4647 ,  G06K9/4652 ,  G06K9/481 ,  G06K9/6212 ,  G06T7/70 ,  G06T2207/10004 ,  G06T2207/10024 ,  G06T2207/30201 ,  G06T2207/30242 ,  H04N7/183

摘要： An image processing system may include an imaging device for capturing an image and an image processing apparatus for processing the image. The imaging device may include an imaging unit for capturing the image, a first recording unit for recording information relating to the image, the information being associated with the image, and a first transmission control unit for controlling transmission of the image to the image processing apparatus. The image processing apparatus may include a reception control unit for controlling reception of the image transmitted from the imaging device, a feature extracting unit for extracting a feature of the received image, a second recording unit for recording the feature, extracted from the image, the feature being associated with the image, and a second transmission control unit for controlling transmission of the feature to the imaging device.

摘要翻译： 图像处理系统可以包括用于捕获图像的成像装置和用于处理图像的图像处理装置。 成像装置可以包括用于捕获图像的成像单元，用于记录与图像有关的信息的第一记录单元，与图像相关联的信息，以及用于控制图像传送到图像处理装置的第一传输控制单元 。 图像处理装置可以包括用于控制从成像装置发送的图像的接收的接收控制单元，用于提取接收图像的特征的特征提取单元，用于记录从图像提取的特征的第二记录单元， 特征与图像相关联，以及第二传输控制单元，用于控制特征到成像装置的传输。

公开(公告)号：US07883084B2

公开(公告)日：2011-02-08

申请号：US12490576

申请日：2009-06-24

申请人： Keiji Okumura ,  Yoshihiro Yamaguchi ,  Yoshio Sugishima ,  Sachio Izumichi

发明人： Keiji Okumura ,  Yoshihiro Yamaguchi ,  Yoshio Sugishima ,  Sachio Izumichi

IPC分类号： B65H3/46

CPC分类号： B65H3/60 ,  B65H1/00 ,  B65H2301/5143 ,  B65H2406/10 ,  B65H2801/06 ,  G03G15/6511

摘要： A sheet feeding device for feeding a sheet-form recording medium includes: a sheet accommodating portion for accommodating a sheet stack constituted by a plurality of sheets of the sheet-form recording medium; and a first warm air unit having a first blowing port for blowing warm air toward an upper face of the sheet stack accommodated in the sheet accommodating portion. The sheet feeding device preferably further includes a second warm air unit having a second blowing port for blowing warm air onto a side face of the sheet stack that is parallel to a sheet feeding direction.

摘要翻译： 用于供给片状记录介质的片材进给装置包括：片材容纳部分，用于容纳由多张片状记录介质构成的片材堆叠; 以及第一热空气单元，其具有朝向容纳在所述片材容纳部分中的片材堆叠的上表面吹送暖空气的第一吹出口。 片材供给装置优选还包括第二暖气单元，其具有用于将热空气吹送到片材堆叠的平行于片材进给方向的侧面的第二吹出口。

公开(公告)号：US07679652B2

公开(公告)日：2010-03-16

申请号：US11774363

申请日：2007-07-06

申请人： Mikio Watanabe ,  Koichi Sakamoto ,  Hisayoshi Tsubaki ,  Yoshihiro Yamaguchi

发明人： Mikio Watanabe ,  Koichi Sakamoto ,  Hisayoshi Tsubaki ,  Yoshihiro Yamaguchi

IPC分类号： H04N5/235 ,  H04N5/76 ,  H04N5/232

CPC分类号： H04N1/00137 ,  H04N1/00127 ,  H04N1/00132 ,  H04N1/00167 ,  H04N1/00172 ,  H04N1/00188 ,  H04N1/00204 ,  H04N1/00278 ,  H04N2101/00 ,  H04N2201/3225 ,  H04N2201/3252 ,  H04N2201/3278

摘要： An image processing system includes: an image capturing apparatus for obtaining an image of a subject, having a setting unit, which sets an obtaining condition for the image according to user's operation, and an outputting unit, which outputs the obtaining condition in association with the image; and an image processing apparatus for performing an image processing for the image, having a receiving unit, which receives the image and the obtaining condition, an image processing unit, which performs an image processing for the image, and a controlling unit, which controls the image processing unit based on the obtaining conditions.

摘要翻译： 一种图像处理系统包括：用于获得被摄体图像的图像捕获装置，具有设置单元，该设置单元根据用户的操作设置图像的获得条件;以及输出单元，其输出与 图片; 以及图像处理装置，用于对图像执行图像处理，具有接收图像和获得条件的接收单元，执行图像的图像处理的图像处理单元，以及控制单元， 基于获得条件的图像处理单元。

公开(公告)号：US20090183612A1

公开(公告)日：2009-07-23

申请号：US12225186

申请日：2007-02-14

申请人： Yoshihiro Yamaguchi ,  Takahiro Iriyama ,  Satoshi Ohnishi

发明人： Yoshihiro Yamaguchi ,  Takahiro Iriyama ,  Satoshi Ohnishi

IPC分类号： B26D5/00

CPC分类号： B26D7/22 ,  B23K9/013 ,  B23K10/00 ,  B23K26/02 ,  B23K26/38 ,  B23K37/006 ,  B26D5/00 ,  B26F3/004 ,  Y10T83/148 ,  Y10T83/159

摘要： A cutting machine secures safety of a worker during movement of a head without lowering production efficiency. When moving a cutting head without cutting material to be cut upon a table, a moving truck and the cutting head are moved at a higher speed as compared with when cutting the material to be cut. If, when the moving truck and the cutting head are moving at high speed, a worker who is present upon the table intercepts either of light beams which are located in front of and behind a horizontal beam, then this movement speed is decelerated to a safe low speed, but the task of cutting the material is not interrupted. Subsequently, when the worker approaches the horizontal beam closer, and contacts a wire or a bar in the vicinity of the horizontal beam, movement of the moving truck and the cutting head is forcibly stopped.

摘要翻译： 切割机在头部移动期间确保工人的安全性，而不降低生产效率。 当切割头没有切割切割材料在桌子上移动切割头时，与切割要切割的材料相比，移动的卡车和切割头以更高的速度移动。 如果当移动的卡车和切割头高速移动时，存在于工作台上的工人拦截位于水平梁前方和后方的光束之一，然后将该移动速度减速到安全 低速，但切割材料的任务不会中断。 随后，当工作人员靠近水平梁并且接触水平梁附近的线或杆时，强制停止移动的卡车和切割头的移动。

公开(公告)号：USD582449S1

公开(公告)日：2008-12-09

申请号：US29290751

申请日：2008-01-10

申请人： Yoshihiro Yamaguchi ,  Kazuhiro Kuraoka

设计人： Yoshihiro Yamaguchi ,  Kazuhiro Kuraoka

公开(公告)号：US20080251838A1

公开(公告)日：2008-10-16

申请号：US12118159

申请日：2008-05-09

申请人： Syotaro Ono ,  Yoshihiro Yamaguchi ,  Yusuke Kawaguchi ,  Kazutoshi Nakamura ,  Norio Yasuhara ,  Kenichi Matsushita ,  Shinichi Hodama ,  Akio Nakagawa

发明人： Syotaro Ono ,  Yoshihiro Yamaguchi ,  Yusuke Kawaguchi ,  Kazutoshi Nakamura ,  Norio Yasuhara ,  Kenichi Matsushita ,  Shinichi Hodama ,  Akio Nakagawa

IPC分类号： H01L29/78

CPC分类号： H01L29/7802 ,  H01L21/26586 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/66712 ,  H01L29/7809

摘要： A semiconductor device includes: a semiconductor substrate, at least a surface portion thereof serving as a low-resistance drain layer of a first conductivity type; a first main electrode connected to the low-resistance drain layer; a high-resistance epitaxial layer of a second-conductivity type formed on the low-resistance drain layer; a second-conductivity type base layer selectively formed on the high-resistance epitaxial layer; a first-conductivity type source layer selectively formed in a surface portion of the second-conductivity type base layer; a trench formed in a region sandwiched by the second-conductivity type base layers with a depth extending from the surface of the high-resistance epitaxial layer to the semiconductor substrate; a jfet layer of the first conductivity type formed on side walls of the trench; an insulating layer formed in the trench; an LDD layer of the first-conductivity type formed in a surface portion of the second-conductivity type base layer so as to be connected to the first-conductivity type jfet layer around a top face of the trench; a control electrode formed above the semiconductor substrate so as to be divided into a plurality of parts, and formed on a gate insulating film formed on a part of the surface of the LDD layer, on surfaces of end parts of the first-conductivity type source layer facing each other across the trench, and on a region of the surface of the second-conductivity type base layer sandwiched by the LDD layer and the first-conductivity type source layer; and a second main electrode in ohmic contact with the first-conductivity type source layer and the second-conductivity type base layer so as to sandwich the control electrode.

摘要翻译： 半导体器件包括：半导体衬底，至少其表面部分用作第一导电类型的低电阻漏极层; 连接到所述低电阻漏极层的第一主电极; 形成在低电阻漏极层上的第二导电类型的高电阻外延层; 选择性地形成在高电阻外延层上的第二导电型基极层; 选择性地形成在所述第二导电型基底层的表面部分中的第一导电型源极层; 在由所述第二导电型基底层夹持的区域中形成的沟槽，其深度从所述高电阻外延层的表面延伸到所述半导体衬底; 形成在沟槽的侧壁上的第一导电类型的jfet层; 形成在沟槽中的绝缘层; 形成在第二导电型基底层的表面部分中的第一导电类型的LDD层，以便围绕沟槽的顶面连接到第一导电型jfet层; 控制电极，其形成在所述半导体衬底上，以被分成多个部分，并形成在形成在所述LDD层的一部分表面上的栅极绝缘膜上，所述第一导电型源的端部 并且在由LDD层和第一导电型源极层夹在第二导电型基底层的表面的区域上， 以及与所述第一导电型源极层和所述第二导电型基极欧姆接触以便夹持所述控制电极的第二主电极。

公开(公告)号：US20080035992A1

公开(公告)日：2008-02-14

申请号：US11836383

申请日：2007-08-09

申请人： Yusuke KAWAGUCHI ,  Yoshihiro Yamaguchi ,  Syotaro Ono ,  Akio Nakagawa ,  Miwako Akiyama ,  Kazuya Nakayama ,  Masakazu Yamaguchi

发明人： Yusuke KAWAGUCHI ,  Yoshihiro Yamaguchi ,  Syotaro Ono ,  Akio Nakagawa ,  Miwako Akiyama ,  Kazuya Nakayama ,  Masakazu Yamaguchi

IPC分类号： H01L29/78

CPC分类号： H01L29/7813 ,  H01L21/2815 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/42356 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/66734 ,  H01L29/7828

摘要： This semiconductor device comprises a drift layer of a first conductivity type formed on a drain layer of a first conductivity type, and a drain electrode electrically connected to the drain layer. A semiconductor base layer of a second conductivity type is formed in a surface of the drift layer, and a source region of a first conductivity type is further formed in the semiconductor base layer.A source electrode is electrically connected to the source region and a semiconductor base layer. Plural gate electrodes are formed through a gate insulation film so that a semiconductor base layer may be sandwiched by the gate electrodes. The width of the semiconductor base layer sandwiched by the gate electrodes is 0.3 micrometers or less.

摘要翻译： 该半导体器件包括形成在第一导电类型的漏极层上的第一导电类型的漂移层和电连接到漏极层的漏电极。 在漂移层的表面上形成第二导电类型的半导体基底层，并且在半导体基底层中进一步形成第一导电类型的源极区。 源电极电连接到源区和半导体基层。 多个栅电极通过栅极绝缘膜形成，使得半导体基底层可以被栅电极夹持。 被栅电极夹持的半导体基底层的宽度为0.3微米以下。