利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

100 条记录 (耗时 0.026 秒)

    Thermal chemical vapor deposition methods, and thermal chemical vapor deposition systems
    63.
    发明授权
    Thermal chemical vapor deposition methods, and thermal chemical vapor deposition systems 有权
    热化学气相沉积方法和热化学气相沉积系统

    公开(公告)号：US07976897B2

    公开(公告)日：2011-07-12

    申请号：US11709509

    申请日：2007-02-21

    申请人： Vishwanath Bhat ,  Gordon Morrison

    发明人： Vishwanath Bhat ,  Gordon Morrison

    IPC分类号： C23C16/00

    CPC分类号： C23C16/4412 ,  C23C16/4408 ,  C23C16/45523

    摘要： One embodiment thermal chemical vapor deposition method includes exposing a substrate within a chamber to first and second deposition precursors effective to thermally chemical vapor deposit a material on the substrate, and exhausting unreacted first and second deposition precursors from the chamber through a vacuum pump via a first exhaust line comprising a filter. A reactive gas is flowed to the material on the substrate, with the reactive gas being reactive with the material. After flowing the reactive gas, an inert purge gas is flowed through the chamber and through the vacuum pump. The flowing of the inert purge gas to the vacuum pump is through a second exhaust line not comprising the filter. The exposing, the flowing of the reactive gas, and the flowing of the inert purge gas are repeated effective to deposit material of desired thickness on the substrate.

    摘要翻译： 一个实施方案的热化学气相沉积方法包括将室内的衬底暴露于第一和第二沉积前体，其有效地将化学气相沉积到衬底上的材料，以及通过真空泵经由第一 排气管线包括过滤器。 反应性气体流到衬底上的材料，反应气体与材料反应。 在流动反应气体后，惰性吹扫气体流过腔室并通过真空泵。 惰性吹扫气体流入真空泵是通过不包括过滤器的第二排气管线。 重复有效地将曝光，反应气体的流动和惰性吹扫气体的流动重叠在基板上沉积所需厚度的材料。

    SEAT TRACK FITTING
    64.
    发明申请
    SEAT TRACK FITTING 有权
    座椅跟踪配件

    公开(公告)号：US20110013972A1

    公开(公告)日：2011-01-20

    申请号：US12822158

    申请日：2010-06-23

    申请人： Philippe Roy ,  Peter Driessen ,  Vishwanath Bhat

    发明人： Philippe Roy ,  Peter Driessen ,  Vishwanath Bhat

    IPC分类号： F16B7/14 ,  B23P11/00

    CPC分类号： B64D11/0696 ,  Y10T29/49947 ,  Y10T403/32467

    摘要： Embodiments of the present invention include a track fitting assembly comprising a main body, at least one pre-loaded stud assembly, and a track comprising a pair of lips. The at least one pre-loaded stud assembly comprises a stud and a compressing device. The at least one pre-loaded stud assembly comprises a clamped position, wherein the stud is coupled to the pair of lips and does not contact the compressing device. The at least one pre-loaded stud assembly also comprises an unclamped position, wherein the stud contacts the compressing device and does not contact the pair of lips. Other embodiments include the main body, at least one shear plunger assembly, and the track comprising the pair of lips, where the pair of lips comprise at least one circular opening. The at least one shear plunger assembly comprises a shear pin and a button. The at least one shear pin assembly comprises an disengaged position, wherein the button extends from the main body and the shear pin is positioned within the main body. The at least one shear plunger assembly also comprises an engaged position, wherein the button is positioned flush with the main body and the shear pin is extended from the main body and within the at least one circular opening.

    摘要翻译： 本发明的实施例包括轨道装配组件，其包括主体，至少一个预加载螺柱组件和包括一对唇缘的轨道。 所述至少一个预加载螺柱组件包括螺柱和压缩装置。 所述至少一个预加载螺柱组件包括夹紧位置，其中所述螺柱联接到所述一对唇缘并且不接触所述压缩装置。 所述至少一个预加载螺柱组件还包括未夹紧位置，其中所述螺柱接触所述压缩装置并且不接触所述一对唇缘。 其他实施例包括主体，至少一个剪切柱塞组件和包括一对唇缘的轨道，其中该对唇缘包括至少一个圆形开口。 所述至少一个剪切柱塞组件包括剪切销和按钮。 所述至少一个剪切销组件包括脱离位置，其中所述按钮从所述主体延伸并且所述剪切销位于所述主体内。 所述至少一个剪切柱塞组件还包括接合位置，其中所述按钮与所述主体齐平并且所述剪切销从所述主体延伸并且在所述至少一个圆形开口内延伸。

    Methods of forming capacitors
    65.
    发明授权
    Methods of forming capacitors 有权
    形成电容器的方法

    公开(公告)号：US07618874B1

    公开(公告)日：2009-11-17

    申请号：US12114124

    申请日：2008-05-02

    申请人： Kevin Shea ,  Brett Busch ,  Farrell Good ,  Irina Vasilyeva ,  Vishwanath Bhat

    发明人： Kevin Shea ,  Brett Busch ,  Farrell Good ,  Irina Vasilyeva ,  Vishwanath Bhat

    IPC分类号： H01L21/20 ,  H01L21/108

    CPC分类号： H01L27/10852 ,  H01L27/10894 ,  H01L28/91 ,  Y10T156/10

    摘要： A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being received within the opening above the shield and a void being received within the opening below the shield. The shield comprises a nitride. Etching is conducted within the opening through the nitride-comprising shield. After the etching, a first capacitor electrode is formed within the opening in electrical connection with the node location. A capacitor dielectric and a second capacitor electrode are formed operatively adjacent the first capacitor electrode. Other aspects and implementations are contemplated.

    摘要翻译： 形成电容器的方法包括在衬底上的节点位置上提供其中具有开口的材料。 在开口内和横过开口设置有屏蔽件，空隙被容纳在屏蔽件上方的开口内，并且在屏蔽件下面的开口内容纳有空隙。 屏蔽包括氮化物。 通过包含氮化物的护罩在开口内进行蚀刻。 在蚀刻之后，在开口内形成与节点位置电连接的第一电容器电极。 与第一电容器电极可操作地形成电容器电介质和第二电容器电极。 考虑了其他方面和实现。

    Methods of forming a plurality of capacitors
    67.
    发明申请
    Methods of forming a plurality of capacitors 有权
    形成多个电容器的方法

    公开(公告)号：US20080206950A1

    公开(公告)日：2008-08-28

    申请号：US11711232

    申请日：2007-02-26

    申请人： Vishwanath Bhat ,  Kevin R. Shea

    发明人： Vishwanath Bhat ,  Kevin R. Shea

    IPC分类号： H01L21/20

    CPC分类号： H01L28/91

    摘要： A method of forming a plurality of capacitors includes an insulative material received over a capacitor array area and a circuitry area. The array area comprises a plurality of capacitor electrode openings within the insulative material received over individual capacitor storage node locations. The intervening area comprises a trench. Conductive metal nitride-comprising material is formed within the openings and against a sidewall portion of the trench to less than completely fill the trench. Inner sidewalls of the conductive material within the trench are annealed in a nitrogen-comprising atmosphere. The insulative material within the array area is etched with a liquid etching solution effective to expose outer sidewall portions of the conductive material within the array area. The conductive material within the array area is incorporated into a plurality of capacitors.

    摘要翻译： 形成多个电容器的方法包括在电容器阵列区域和电路区域上接收的绝缘材料。 阵列区域包括在单独的电容器存储节点位置处接收的绝缘材料内的多个电容器电极开口。 中间区域包括沟槽。 导电的含金属氮化物的材料形成在开口内并抵靠沟槽的侧壁部分以小于完全填充沟槽。 沟槽内的导电材料的内侧壁在含氮气氛中退火。 用液体蚀刻溶液蚀刻阵列区域内的绝缘材料，有效地暴露阵列区域内的导电材料的外侧壁部分。 阵列区域内的导电材料被并入多个电容器中。

    Devices comprising aluminum oxide and metal oxide dielectric materials, capacitor constructions, and methods of forming capacitor constructions
    68.
    发明申请
    Devices comprising aluminum oxide and metal oxide dielectric materials, capacitor constructions, and methods of forming capacitor constructions 失效
    包括氧化铝和金属氧化物电介质材料的器件，电容器结构以及形成电容器结构的方法

    公开(公告)号：US20050224913A1

    公开(公告)日：2005-10-13

    申请号：US10822062

    申请日：2004-04-08

    申请人： Vishwanath Bhat ,  F. Gealy ,  Cancheepuram Srividya

    发明人： Vishwanath Bhat ,  F. Gealy ,  Cancheepuram Srividya

    IPC分类号： H01L21/00 ,  H01L21/02 ,  H01L21/316 ,  H01L21/8242

    CPC分类号： H01L28/56 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L28/40

    摘要： The invention includes constructions having two dielectric layers over a conductively-doped semiconductive material. One of the dielectric layers contains aluminum oxide, and the other contains a metal oxide other than aluminum oxide (such metal oxide can be, for example, one or more of hafnium oxide, tantalum oxide, titanium oxide and zirconium oxide). The layer containing aluminum oxide is between the layer containing metal oxide and the conductively-doped semiconductive material. The invention includes capacitor devices having one electrode containing conductively-doped silicon and another electrode containing one or more metals and/or metal compounds. At least two dielectric layers are formed between the two capacitor electrodes, with one of the dielectric layers containing aluminum oxide and the other containing a metal oxide other than aluminum oxide. The invention also includes methods of forming capacitor constructions.

    摘要翻译： 本发明包括在导电掺杂的半导体材料上具有两个电介质层的结构。 电介质层中的一层包含氧化铝，另外含有氧化铝以外的金属氧化物（例如，氧化铪，氧化钽，氧化钛，氧化锆等中的一种或多种）。 含有氧化铝的层位于含金属氧化物层和导电掺杂半导体材料之间。 本发明包括具有一个含有导电掺杂硅的电极和含有一种或多种金属和/或金属化合物的另一电极的电容器器件。 在两个电容器电极之间形成至少两个电介质层，其中一个电介质层包含氧化铝，另一个包含除氧化铝之外的金属氧化物。 本发明还包括形成电容器结构的方法。

    Capacitor structure with metal bilayer and method for using the same
    69.
    发明授权
    Capacitor structure with metal bilayer and method for using the same 有权
    金属双层电容结构及其使用方法

    公开(公告)号：US08841747B2

    公开(公告)日：2014-09-23

    申请号：US13090277

    申请日：2011-04-20

    申请人： Vassil Antonov ,  Vishwanath Bhat ,  Chris Carlson

    发明人： Vassil Antonov ,  Vishwanath Bhat ,  Chris Carlson

    IPC分类号： H01L21/02 ,  H01L49/02

    CPC分类号： H01L28/75 ,  H01L27/10844 ,  H01L28/65

    摘要： A method for using a metal bilayer is disclosed. First, a bottom electrode is provided. Second, a dielectric layer which is disposed on and is in direct contact with the lower electrode is provided. Then, a metal bilayer which serves as a top electrode in a capacitor is provided. The metal bilayer is disposed on and is in direct contact with the dielectric layer. The metal bilayer consists of a noble metal in direct contact with the dielectric layer and a metal nitride in direct contact with the noble metal.

    摘要翻译： 公开了一种使用金属双层的方法。 首先，设置底部电极。 第二，提供了设置在下电极上并与下电极直接接触的电介质层。 然后，提供用作电容器中的顶部电极的金属双层。 金属双层配置在电介质层上并与电介质层直接接触。 金属双层由与电介质层直接接触的贵金属和与贵金属直接接触的金属氮化物组成。