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公开(公告)号：US08513807B2
公开(公告)日：2013-08-20
申请号：US13407185
申请日：2012-02-28
申请人： Vishwanath Bhat , Dan Gealy , Vassil Antonov
发明人： Vishwanath Bhat , Dan Gealy , Vassil Antonov
IPC分类号： H01L21/44
CPC分类号： H01L28/40 , C23C16/029 , C23C16/18 , H01G4/085 , H01G4/1209 , H01L27/10852 , H01L28/65 , H01L28/75
摘要： Methods for forming ruthenium films and semiconductor devices such as capacitors that include the films are provided.
摘要翻译： 提供形成钌膜的方法和诸如包括膜的电容器的半导体器件。
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公开(公告)号：US08124528B2
公开(公告)日：2012-02-28
申请号：US12100632
申请日：2008-04-10
申请人： Vishwanath Bhat , Dan Gealy , Vassil Antonov
发明人： Vishwanath Bhat , Dan Gealy , Vassil Antonov
IPC分类号： H01L21/44
CPC分类号： H01L28/40 , C23C16/029 , C23C16/18 , H01G4/085 , H01G4/1209 , H01L27/10852 , H01L28/65 , H01L28/75
摘要： Methods for forming ruthenium films and semiconductor devices such as capacitors that include the films are provided.
摘要翻译： 提供形成钌膜的方法和诸如包括膜的电容器的半导体器件。
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公开(公告)号：US20090257170A1
公开(公告)日：2009-10-15
申请号：US12100632
申请日：2008-04-10
申请人： Vishwanath Bhat , Dan Gealy , Vassil Antonov
发明人： Vishwanath Bhat , Dan Gealy , Vassil Antonov
CPC分类号： H01L28/40 , C23C16/029 , C23C16/18 , H01G4/085 , H01G4/1209 , H01L27/10852 , H01L28/65 , H01L28/75
摘要： Methods for forming ruthenium films and semiconductor devices such as capacitors that include the films are provided.
摘要翻译： 提供形成钌膜的方法和诸如包括膜的电容器的半导体器件。
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公开(公告)号：US20120161282A1
公开(公告)日：2012-06-28
申请号：US13407185
申请日：2012-02-28
申请人： Vishwanath Bhat , Dan Gealy , Vassil Antonov
发明人： Vishwanath Bhat , Dan Gealy , Vassil Antonov
CPC分类号： H01L28/40 , C23C16/029 , C23C16/18 , H01G4/085 , H01G4/1209 , H01L27/10852 , H01L28/65 , H01L28/75
摘要： Methods for forming ruthenium films and semiconductor devices such as capacitors that include the films are provided.
摘要翻译： 提供形成钌膜的方法和诸如包括膜的电容器的半导体器件。
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公开(公告)号：US08951903B2
公开(公告)日：2015-02-10
申请号：US13366025
申请日：2012-02-03
IPC分类号： H01L21/3205 , H01L21/31 , H01L21/28 , C23C16/455 , H01L21/314 , H01L21/316 , H01L29/51 , H01L49/02 , H01L29/78
CPC分类号： H01L21/022 , C23C16/45529 , H01L21/02148 , H01L21/02194 , H01L21/0228 , H01L21/28194 , H01L21/3141 , H01L21/3142 , H01L21/31641 , H01L21/31645 , H01L28/40 , H01L28/56 , H01L29/517 , H01L29/78
摘要： Graded dielectric layers and methods of fabricating such dielectric layers provide dielectrics in a variety of electronic structures for use in a wide range of electronic devices and systems. In an embodiment, a dielectric layer is graded with respect to a doping profile across the dielectric layer. In an embodiment, a dielectric layer is graded with respect to a crystalline structure profile across the dielectric layer. In an embodiment, a dielectric layer is formed by atomic layer deposition incorporating sequencing techniques to generate a doped dielectric material.
摘要翻译： 梯度介电层和制造这种电介质层的方法在各种电子结构中提供电介质以用于广泛的电子设备和系统。 在一个实施例中，电介质层相对于跨介电层的掺杂分布而分级。 在一个实施例中，电介质层相对于介电层上的晶体结构分布呈梯度分布。 在一个实施例中，通过包含测序技术的原子层沉积形成电介质层以产生掺杂的电介质材料。
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公开(公告)号：US20120202358A1
公开(公告)日：2012-08-09
申请号：US13366025
申请日：2012-02-03
IPC分类号： H01L21/314
CPC分类号： H01L21/022 , C23C16/45529 , H01L21/02148 , H01L21/02194 , H01L21/0228 , H01L21/28194 , H01L21/3141 , H01L21/3142 , H01L21/31641 , H01L21/31645 , H01L28/40 , H01L28/56 , H01L29/517 , H01L29/78
摘要： Graded dielectric layers and methods of fabricating such dielectric layers provide dielectrics in a variety of electronic structures for use in a wide range of electronic devices and systems. In an embodiment, a dielectric layer is graded with respect to a doping profile across the dielectric layer. In an embodiment, a dielectric layer is graded with respect to a crystalline structure profile across the dielectric layer. In an embodiment, a dielectric layer is formed by atomic layer deposition incorporating sequencing techniques to generate a doped dielectric material.
摘要翻译： 梯度介电层和制造这种电介质层的方法在各种电子结构中提供电介质以用于广泛的电子设备和系统。 在一个实施例中，电介质层相对于跨介电层的掺杂分布而分级。 在一个实施例中，电介质层相对于介电层上的晶体结构分布呈梯度分布。 在一个实施例中，通过包含测序技术的原子层沉积形成电介质层以产生掺杂的电介质材料。
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公开(公告)号：US20070048953A1
公开(公告)日：2007-03-01
申请号：US11216542
申请日：2005-08-30
申请人： Dan Gealy , Vishwanath Bhat , Cancheepuram Srividya , M. Rocklein
发明人： Dan Gealy , Vishwanath Bhat , Cancheepuram Srividya , M. Rocklein
IPC分类号： H01L21/336
CPC分类号： H01L21/022 , C23C16/45529 , H01L21/02148 , H01L21/02194 , H01L21/0228 , H01L21/28194 , H01L21/3141 , H01L21/3142 , H01L21/31641 , H01L21/31645 , H01L28/40 , H01L28/56 , H01L29/517 , H01L29/78
摘要： Graded dielectric layers and methods of fabricating such dielectric layers provide dielectrics in a variety of electronic structures for use in a wide range of electronic devices and systems. In an embodiment, a dielectric layer is graded with respect to a doping profile across the dielectric layer. In an embodiment, a dielectric layer is graded with respect to a crystalline structure profile across the dielectric layer. In an embodiment, a dielectric layer is formed by atomic layer deposition incorporating sequencing techniques to generate a doped dielectric material.
摘要翻译： 梯度介电层和制造这种电介质层的方法在各种电子结构中提供电介质以用于广泛的电子设备和系统。 在一个实施例中，电介质层相对于跨介电层的掺杂分布而分级。 在一个实施例中，电介质层相对于介电层上的晶体结构分布呈梯度分布。 在一个实施例中，通过包含测序技术的原子层沉积形成电介质层以产生掺杂的电介质材料。
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公开(公告)号：US20090155486A1
公开(公告)日：2009-06-18
申请号：US11958952
申请日：2007-12-18
申请人： Vishwanath Bhat , Rishikesh Krishnan , Dan Gealy
发明人： Vishwanath Bhat , Rishikesh Krishnan , Dan Gealy
CPC分类号： C23C16/405 , C30B25/02 , C30B29/16 , H01G4/33 , H01G9/0032 , H01L28/65
摘要： There is disclosed a method of forming crystalline tantalum pentoxide on a ruthenium-containing material having an oxygen-containing surface wherein the oxygen-containing surface is contacted with a treating composition, such as water, to remove at least some oxygen. Crystalline tantalum pentoxide is formed on at least a portion of the surface having reduced oxygen content.
摘要翻译： 公开了在具有含氧表面的含钌材料上形成结晶五氧化钽的方法，其中含氧表面与处理组合物如水接触以除去至少一些氧。 在具有降低的氧含量的表面的至少一部分上形成五氧化二钽结晶。
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公开(公告)号：US08110469B2
公开(公告)日：2012-02-07
申请号：US11216542
申请日：2005-08-30
IPC分类号： H01L21/336 , H01L21/3205 , H01L21/31 , H01L21/469
CPC分类号： H01L21/022 , C23C16/45529 , H01L21/02148 , H01L21/02194 , H01L21/0228 , H01L21/28194 , H01L21/3141 , H01L21/3142 , H01L21/31641 , H01L21/31645 , H01L28/40 , H01L28/56 , H01L29/517 , H01L29/78
摘要： Graded dielectric layers and methods of fabricating such dielectric layers provide dielectrics in a variety of electronic structures for use in a wide range of electronic devices and systems. In an embodiment, a dielectric layer is graded with respect to a doping profile across the dielectric layer. In an embodiment, a dielectric layer is graded with respect to a crystalline structure profile across the dielectric layer. In an embodiment, a dielectric layer is formed by atomic layer deposition incorporating sequencing techniques to generate a doped dielectric material.
摘要翻译： 梯度介电层和制造这种电介质层的方法在各种电子结构中提供电介质以用于广泛的电子设备和系统。 在一个实施例中，电介质层相对于跨介电层的掺杂分布而分级。 在一个实施例中，电介质层相对于介电层上的晶体结构分布呈梯度分布。 在一个实施例中，通过包含测序技术的原子层沉积形成电介质层以产生掺杂的电介质材料。
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公开(公告)号：US08012532B2
公开(公告)日：2011-09-06
申请号：US11958952
申请日：2007-12-18
申请人： Vishwanath Bhat , Rishikesh Krishnan , Dan Gealy
发明人： Vishwanath Bhat , Rishikesh Krishnan , Dan Gealy
CPC分类号： C23C16/405 , C30B25/02 , C30B29/16 , H01G4/33 , H01G9/0032 , H01L28/65
摘要： There is disclosed a method of forming crystalline tantalum pentoxide on a ruthenium-containing material having an oxygen-containing surface wherein the oxygen-containing surface is contacted with a treating composition, such as water, to remove at least some oxygen. Crystalline tantalum pentoxide is formed on at least a portion of the surface having reduced oxygen content.
摘要翻译： 公开了在具有含氧表面的含钌材料上形成结晶五氧化钽的方法，其中含氧表面与处理组合物如水接触以除去至少一些氧。 在具有降低的氧含量的表面的至少一部分上形成五氧化二钽结晶。
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