Method of forming nano-sized MTJ cell without contact hole
    63.
    发明授权
    Method of forming nano-sized MTJ cell without contact hole 有权
    形成无接触孔的纳米尺寸MTJ电池的方法

    公开(公告)号:US07220601B2

    公开(公告)日:2007-05-22

    申请号:US11033830

    申请日:2005-01-13

    IPC分类号: H01L21/00

    CPC分类号: H01L43/12 G11C11/16

    摘要: Provided is a method of manufacturing a nano-sized MTJ cell in which a contact in the MTJ cell is formed without forming a contact hole. The method of forming the MTJ cell includes forming an MTJ layer on a substrate, forming an MTJ cell region by patterning the MTJ layer, sequentially depositing an insulating layer and a mask layer on the MTJ layer, exposing an upper surface of the MTJ cell region by etching the mask layer and the insulating layer at the same etching rate, and depositing a metal layer on the insulating layer and the MTJ layer.

    摘要翻译: 提供一种制造其中形成MTJ电池中的接触而不形成接触孔的纳米尺寸的MTJ电池的方法。 形成MTJ单元的方法包括在基板上形成MTJ层,通过图案化MTJ层形成MTJ单元区域,在MTJ层上依次沉积绝缘层和掩模层,暴露MTJ单元区域的上表面 通过以相同的蚀刻速率蚀刻掩模层和绝缘层,并在绝缘层和MTJ层上沉积金属层。

    Reflection mask for EUV photolithography and method of fabricating the reflection mask
    64.
    发明申请
    Reflection mask for EUV photolithography and method of fabricating the reflection mask 有权
    用于EUV光刻的反射掩模和制造反射掩模的方法

    公开(公告)号:US20060281017A1

    公开(公告)日:2006-12-14

    申请号:US11441835

    申请日:2006-05-26

    IPC分类号: G21K5/00 G03F1/00

    摘要: A reflection mask for extreme ultraviolet (EUV) photolithography and a method of fabricating the same, in which the reflection mask includes a substrate, a lower reflection layer formed in a multi-layer structure on the substrate and including a material reflecting EUV light, an upper reflection layer formed in a multi-layer structure on the lower reflection layer and reflecting EUV light, and a phase reversing layer formed between the lower reflection layer and the upper reflection layer in a certain pattern and causing destructive interference between reflection light from the upper reflection layer and reflection light from the lower reflection layer. An incidence of a shadow effect can be reduced and unnecessary EUV light can be eliminated, so that a pattern on the reflection mask can be projected precisely on a silicon wafer. Since the phase reversing layer includes the same material as the reflection layer and an absorption layer, mask fabrication processes can be handled easily.

    摘要翻译: 一种用于极紫外(EUV)光刻的反射掩模及其制造方法,其中反射掩模包括基板,在基板上形成为多层结构的下反射层,并且包括反射EUV光的材料, 在下反射层上形成多层结构并反射EUV光的上反射层和以一定图案形成在下反射层和上反射层之间的相位反转层,并且产生来自上层的反射光之间的相消干涉 反射层和来自下反射层的反射光。 可以减少阴影效应的入射,并且可以消除不必要的EUV光,使得反射掩模上的图案可以精确地投影在硅晶片上。 由于相位反转层包括与反射层和吸收层相同的材料,因此可以容易地处理掩模制造工艺。

    Light-sensing apparatuses, methods of driving the light-sensing apparatuses, and optical touch screen apparatuses including the light-sensing apparatuses
    65.
    发明授权
    Light-sensing apparatuses, methods of driving the light-sensing apparatuses, and optical touch screen apparatuses including the light-sensing apparatuses 有权
    感光装置,驱动感光装置的方法以及包括光感测装置的光学触摸屏装置

    公开(公告)号:US09576992B2

    公开(公告)日:2017-02-21

    申请号:US13435666

    申请日:2012-03-30

    摘要: Light-sensing apparatuses may include a light sensor transistor and a switching transistor in a light-sensing pixel, the transistors being oxide semiconductor transistors. In the light-sensing apparatus, the light sensor transistor and the switching transistor in the light-sensing pixel may be adjacently formed on one substrate, the switching transistor including a channel material that is relatively less light-sensitive than the light sensor transistor and is stable, and the light sensor transistor includes a channel material that is relatively light-sensitive. The light sensor transistor may include a transparent upper electrode on a surface of a channel, and a negative voltage may be applied to the transparent upper electrode, whereby a threshold voltage shift in a negative voltage direction may be prevented or reduced.

    摘要翻译: 光感测装置可以包括光感测像素中的光传感器晶体管和开关晶体管,该晶体管是氧化物半导体晶体管。 在感光装置中,光感测像素中的光传感器晶体管和开关晶体管可以相邻地形成在一个衬底上,该开关晶体管包括与光传感器晶体管相比较不光敏的沟道材料,并且是 并且光传感器晶体管包括相对光敏的通道材料。 光传感器晶体管可以在通道的表面上包括透明上电极,并且可以向透明上电极施加负电压,由此可以防止或减小负电压方向上的阈值电压偏移。

    Transistors, methods of manufacturing the same, and electronic devices including transistors
    67.
    发明授权
    Transistors, methods of manufacturing the same, and electronic devices including transistors 有权
    晶体管及其制造方法以及包括晶体管的电子器件

    公开(公告)号:US09117727B2

    公开(公告)日:2015-08-25

    申请号:US13099806

    申请日:2011-05-03

    CPC分类号: H01L27/14681 H01L27/14692

    摘要: Example embodiments disclose transistors, methods of manufacturing the same, and electronic devices including transistors. An active layer of a transistor may include a plurality of material layers (oxide layers) with different energy band gaps. The active layer may include a channel layer and a photo sensing layer. The photo sensing layer may have a single-layered or multi-layered structure. When the photo sensing layer has a multi-layered structure, the photo sensing layer may include a first material layer and a second material layer that are sequentially stacked on a surface of the channel layer. The first layer and the second layer may be alternately stacked one or more times.

    摘要翻译: 示例性实施例公开了晶体管,其制造方法以及包括晶体管的电子器件。 晶体管的有源层可以包括具有不同能带隙的多个材料层(氧化物层)。 有源层可以包括沟道层和感光层。 感光层可以具有单层或多层结构。 当感光层具有多层结构时,感光层可以包括依次层叠在沟道层的表面上的第一材料层和第二材料层。 第一层和第二层可以交替堆叠一次或多次。

    Optical touch panels and methods of driving the same
    69.
    发明授权
    Optical touch panels and methods of driving the same 有权
    光触摸面板及其驱动方法

    公开(公告)号:US08917260B2

    公开(公告)日:2014-12-23

    申请号:US12805722

    申请日:2010-08-17

    IPC分类号: G06F3/042 G06F3/041 G06F3/038

    CPC分类号: G06F3/0412 G06F3/0386

    摘要: An optical touch panel may include a plurality of light-sensing areas. The plurality of light-sensing areas may be integrally formed with pixels in a display panel or may be formed on the display panel, in order to sense incident light from outside the optical touch panel. A method of driving an optical touch panel may include sensing a change in an output from a plurality of light-sensing areas between two time points and determining that there is an optical input when the change in the output is greater than or equal to a first reference value that is defined in advance. The light-sensing areas may be integrally formed with pixels in a display panel or formed on a surface of the display panel, for sensing incident light from outside the optical touch panel.

    摘要翻译: 光学触摸面板可以包括多个感光区域。 多个感光区域可以与显示面板中的像素一体地形成,或者可以形成在显示面板上,以便感测来自光学触摸面板外部的入射光。 驱动光学触摸面板的方法可以包括:在两个时间点之间感测来自多个光感测区域的输出的变化,并且当输出的变化大于或等于第一时间点时,确定存在光学输入 提前定义的参考值。 光感测区域可以与显示面板中的像素一体地形成或形成在显示面板的表面上,用于感测来自光学触摸面板外部的入射光。

    Optical touch panel and method of fabricating the same
    70.
    发明授权
    Optical touch panel and method of fabricating the same 有权
    光触摸面板及其制造方法

    公开(公告)号:US08890138B2

    公开(公告)日:2014-11-18

    申请号:US12929301

    申请日:2011-01-13

    摘要: An optical touch panel may be used remotely to control a large-sized display device. According to a method of fabricating the optical touch panel, an optical sensor transistor for sensing light and a switch transistor for drawing data can be formed together on the same substrate by using a relatively simple process. The optical touch panel may include an optical sensor transistor and a switch transistor. The optical sensor transistor may be configured to sense light and the switch transistor may be configured to draw data from the optical sensor transistor. The optical sensor transistor may include a light sensitive oxide semiconductor material as a channel layer. The switch transistor may include a non-light sensitive oxide semiconductor material as a channel layer.

    摘要翻译: 可以远程地使用光学触摸面板来控制大型显示装置。 根据制造光学触摸面板的方法,可以通过使用相对简单的工艺在相同的基板上一起形成用于感测光的光学传感器晶体管和用于绘制数据的开关晶体管。 光学触摸面板可以包括光学传感器晶体管和开关晶体管。 光学传感器晶体管可以被配置为感测光,并且开关晶体管可以被配置为从光学传感器晶体管绘制数据。 光传感器晶体管可以包括作为沟道层的光敏氧化物半导体材料。 开关晶体管可以包括作为沟道层的非光敏氧化物半导体材料。