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109 条记录 (耗时 0.025 秒)

    Method and composition for selectively etching against cobalt silicide
    61.
    发明授权
    Method and composition for selectively etching against cobalt silicide 失效
    选择性蚀刻硅化钴的方法和组成

    公开(公告)号：US06759343B2

    公开(公告)日：2004-07-06

    申请号：US10050639

    申请日：2002-01-15

    申请人： Whonchee Lee ,  Yongjun Jeff Hu

    发明人： Whonchee Lee ,  Yongjun Jeff Hu

    IPC分类号： H01L21302

    CPC分类号： C23F1/28 ,  H01L21/32134 ,  H01L21/76895

    摘要： An etching method for use in integrated circuit fabrication includes providing a metal nitride layer on a substrate assembly, providing regions of cobalt silicide on first portions of the metal nitride layer, and providing regions of cobalt on second portions of the metal nitride layer. The regions of cobalt and the second portions of the metal nitride layer are removed with at least one solution including a mineral acid and a peroxide. Further, the removal of the regions of cobalt and the second portions of the metal nitride layer may include a one-step process or a two-step process. In the one-step process, the regions of cobalt and the second portions of the metal nitride layer are removed with a single solution including the mineral acid and the peroxide. In the two-step process, the regions of cobalt are removed with a first solution containing a mineral acid and a peroxide and the second portions of the metal nitride layer are removed with a second solution containing a peroxide.

    摘要翻译： 用于集成电路制造的蚀刻方法包括在衬底组件上提供金属氮化物层，在金属氮化物层的第一部分上提供钴硅化物的区域，以及在金属氮化物层的第二部分上提供钴区域。 用至少一种包含无机酸和过氧化物的溶液除去钴的区域和金属氮化物层的第二部分。 此外，去除钴的区域和金属氮化物层的第二部分可以包括一步法或两步法。 在一步法中，用包含无机酸和过氧化物的单一溶液除去钴的区域和金属氮化物层的第二部分。 在两步法中，用含有无机酸和过氧化物的第一溶液除去钴的区域，并用含有过氧化物的第二溶液除去金属氮化物层的第二部分。

    Compositions for etching silicon with high selectivity to oxides and methods of using same
    62.
    发明授权
    Compositions for etching silicon with high selectivity to oxides and methods of using same 失效

    公开(公告)号：US06660180B2

    公开(公告)日：2003-12-09

    申请号：US09997928

    申请日：2001-11-30

    申请人： Whonchee Lee ,  Pai Pan ,  Terry Gilton

    发明人： Whonchee Lee ,  Pai Pan ,  Terry Gilton

    IPC分类号： C09K1300

    CPC分类号： H01L21/30604 ,  H01L21/76224

    摘要： A silicon etching method includes providing a substrate assembly including an exposed silicon region and an exposed oxide region. An etch composition including an ammonium fluoride component, an inorganic acid component, and an oxidizing agent is also provided. The etch composition has a pH in the range of about 7.0 to about 8.0. The substrate assembly is exposed to the etch composition. Exposing the substrate assembly to the etch composition may result in etching the exposed silicon region at an etching rate that is greater than about 3 times the etching rate of the exposed oxide region and/or etching the silicon region at an etch rate greater than about 9 Å/minute. The etching method may be used in forming isolation structures. Further, etch compositions for performing the desired etch are provided.

    Methods of forming insulative plugs and oxide plug forming methods
    63.
    发明授权
    Methods of forming insulative plugs and oxide plug forming methods 失效
    形成绝缘塞的方法和氧化物塞形成方法

    公开(公告)号：US06436831B1

    公开(公告)日：2002-08-20

    申请号：US09528740

    申请日：2000-03-20

    申请人： Pai-Hung Pan ,  Whonchee Lee

    发明人： Pai-Hung Pan ,  Whonchee Lee

    IPC分类号： H01L21302

    CPC分类号： H01L21/76224 ,  H01L21/30604 ,  H01L21/31053 ,  H01L21/31612

    摘要： In one aspect, the invention includes a method of forming an insulative plug within a substrate, comprising: a) forming a masking layer over the substrate, the masking layer having an opening extending therethrough to expose a portion of the underlying substrate; b) etching the exposed portion of the underlying substrate to form an opening extending into the substrate; c) forming an insulative material within the opening in the substrate, the insulative material within the opening forming an insulative plug within the substrate; d) after forming the insulative material within the opening, removing the masking layer; and e) after removing the masking layer, removing a portion of the substrate to lower an upper surface of the substrate relative to the insulative plug.

    摘要翻译： 在一个方面，本发明包括一种在衬底内形成绝缘插塞的方法，包括：a）在衬底上形成掩模层，掩模层具有穿过其中的开口以露出下面衬底的一部分; b）蚀刻下面的衬底的暴露部分以形成延伸到衬底中的开口; c）在所述基板的开口内形成绝缘材料，所述开口内的所述绝缘材料在所述基板内形成绝缘塞; d）在开口内形成绝缘材料之后，去除掩模层; 以及e）在去除掩蔽层之后，去除衬底的一部分以相对于绝缘插头降低衬底的上表面。

    Electroplating systems
    66.
    发明授权
    Electroplating systems 有权
    电镀系统

    公开(公告)号：US08419906B2

    公开(公告)日：2013-04-16

    申请号：US12234783

    申请日：2008-09-22

    申请人： Suresh Ramarajan ,  Whonchee Lee

    发明人： Suresh Ramarajan ,  Whonchee Lee

    IPC分类号： C25D17/14 ,  C25D17/12 ,  C25D17/06 ,  C25D17/00

    CPC分类号： C25D17/002 ,  C25D5/18 ,  C25D7/123 ,  C25D17/001 ,  C25D17/10 ,  C25D17/12 ,  H01L21/2885

    摘要： Electroplating systems that include a plurality of electrodes, a power supply operably coupled to the plurality of electrodes, a platen for bearing a substrate on which metal features are to be formed, and an electrode support are disclosed. The electrode support may be configured for suspending the electrode assembly over an upper surface of the substrate disposed on the platen in spaced relation to and in alignment with the substrate or for supporting the electrode assembly in a stationary position over the substrate when the voltage is applied across the plurality of electrodes. The electrodes may be adjacent, mutually spaced and electrically isolated and connected in series so as to be oppositely polarized when the voltage is applied thereacross or may be connected so as to have alternating polarities when the voltage is applied thereacross.

    摘要翻译： 公开了包括多个电极的电镀系统，可操作地耦合到多个电极的电源，用于承载要形成金属特征的基板的压板和电极支撑件。 电极支撑件可以被配置用于将电极组件悬挂在设置在压板上的衬底的上表面上，该衬底的上表面与衬底间隔开并与之对准，或者当施加电压时，将电极组件支撑在衬底上的静止位置 跨越多个电极。 电极可以相邻，相互间隔并且电隔离并且串联连接，以便当在其上施加电压时可以相反地极化，或者可以在电压施加到其上时具有交替的极性。

    METHODS OF ETCHING SINGLE CRYSTAL SILICON
    67.
    发明申请
    METHODS OF ETCHING SINGLE CRYSTAL SILICON 有权
    蚀刻单晶硅的方法

    公开(公告)号：US20120322263A1

    公开(公告)日：2012-12-20

    申请号：US13599791

    申请日：2012-08-30

    申请人： Whonchee Lee ,  Janos Fucsko ,  David H. Wells

    发明人： Whonchee Lee ,  Janos Fucsko ,  David H. Wells

    IPC分类号： H01L21/306

    CPC分类号： H01L21/30608 ,  B81B2203/033 ,  B81B2203/0338 ,  B81C1/00626 ,  C30B29/06 ,  C30B33/10

    摘要： A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The substrate is exposed to a buffered fluoride etch solution which undercuts the silicon to provide lateral shelves when patterned in the direction. The resulting structure includes an undercut feature when patterned in the direction.

    摘要翻译： 单晶硅蚀刻方法包括提供其中具有至少一个沟槽的单晶硅衬底。 将衬底暴露于缓冲的氟化物蚀刻溶液，其在<100>方向图案化时，其将硅切割以提供横向搁板。 当沿<100>方向图案化时，所得结构包括底切特征。