公开(公告)号：US5719730A

公开(公告)日：1998-02-17

申请号：US682476

申请日：1996-07-17

申请人： Jei-Wei Chang ,  Kochan Ju ,  Yimin Guo ,  Xizeng Shi ,  Arthur Hungshin Tao

发明人： Jei-Wei Chang ,  Kochan Ju ,  Yimin Guo ,  Xizeng Shi ,  Arthur Hungshin Tao

IPC分类号： G11B5/012 ,  G11B5/187 ,  G11B5/265 ,  G11B5/31 ,  G11B5/39 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/1871 ,  G11B5/2651 ,  G11B5/3103 ,  G11B5/3116 ,  G11B5/3967 ,  G11B2005/3996 ,  G11B5/012

摘要： A low fringe-field and narrow write-track magnetic read-write head. The low fringe-field and narrow write-track magnetic read-write head includes a first pole layer formed adjoining an insulator layer over a substrate. The first pole layer has a first air bearing surface which has a first edge adjoining and parallel with a first surface of the insulator layer. The low fringe-field and narrow write-track magnetic read-write head also includes a second pole layer separated from the first pole layer by the insulator layer. The second pole layer has a width no greater than about 20 microns and a width no greater than about 100 percent of the width of the first pole layer where the width of the second pole layer is contained within the width of the first pole layer. The second pole layer also has a second air bearing surface coplanar with the first air bearing surface. The second air bearing surface has a second edge adjoining and parallel with a second surface of the insulator layer parallel and opposite from the first surface of the insulator layer. Finally, there is removed at least one portion of at least one of: (1) the second air bearing surface including at least one outer portion of the second edge; and (2) the first air bearing surface including at least one portion of the first edge most closely adjoining but not opposite the second edge.

摘要翻译： 低边缘场和窄写磁道磁读写头。 低条纹场和窄写磁道磁读写头包括邻近衬底上的绝缘体层形成的第一极层。 第一极层具有第一空气轴承表面，其具有与绝缘体层的第一表面相邻并平行的第一边缘。 低条纹场和窄写磁道磁读写头还包括通过绝缘体层与第一极层分离的第二极层。 第二极层的宽度不大于约20微米，宽度不大于第一极层的宽度的第一极层的宽度的大约百分之百，其中第二极层的宽度包含在第一极层的宽度内。 第二极层还具有与第一空气轴承表面共面的第二空气轴承表面。 第二空气轴承表面具有与绝缘体层的与绝缘体层的第一表面平行且相对的绝缘体层的第二表面相邻并平行的第二边缘。 最后，移除至少一部分至少一个：（1）第二空气支承表面包括第二边缘的至少一个外部部分; 和（2）所述第一空气轴承表面包括所述第一边缘的至少一部分最接近但不相对于所述第二边缘。

公开(公告)号：US07613868B2

公开(公告)日：2009-11-03

申请号：US10865717

申请日：2004-06-09

申请人： Hsu Kai (Karl) Yang ,  Xizeng Shi ,  Po-Kang Wang ,  Bruce Yee Yang

发明人： Hsu Kai (Karl) Yang ,  Xizeng Shi ,  Po-Kang Wang ,  Bruce Yee Yang

IPC分类号： G06F13/16 ,  G11C11/15

CPC分类号： G11C11/15 ,  G11C8/14

摘要： A method and system for programming and reading a magnetic memory is disclosed. The magnetic memory includes a plurality of selectable word line segments and a plurality of magnetic storage cells corresponding to each word line segment. The method and system include reading the magnetic storage cells corresponding to a word line segment to determine a state of each magnetic storage cell. The method and system also include writing data to a portion of the magnetic cells corresponding to the word line segment after the reading. The method and system also include rewriting the state to each of a remaining portion of the magnetic storage cells corresponding to the word line segments at substantially the same time as the portion of the magnetic cells are written.

摘要翻译： 公开了一种用于编程和读取磁存储器的方法和系统。 磁存储器包括多个可选字线段和对应于每个字线段的多个磁存储单元。 该方法和系统包括读取对应于字线段的磁存储单元以确定每个磁存储单元的状态。 该方法和系统还包括在读取之后将数据写入对应于字线段的磁性单元的一部分。 所述方法和系统还包括将所述状态重写为与写入所述磁性单元的所述部分基本相同的时间对应于所述字线段的所述磁存储单元的剩余部分。

公开(公告)号：US07362644B2

公开(公告)日：2008-04-22

申请号：US11313019

申请日：2005-12-20

申请人： Hsu Kai Yang ,  Po-Kang Wang ,  Xizeng Shi

发明人： Hsu Kai Yang ,  Po-Kang Wang ,  Xizeng Shi

IPC分类号： G11C11/06

CPC分类号： G11C29/02 ,  G11C7/20 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1693 ,  G11C29/021 ,  G11C29/023 ,  G11C29/028 ,  G11C29/50012

摘要： A configurable MRAM device is achieved. The device comprises a memory array of magnetic memory cells. A first part of the array comprises the memory cells that can be accessed for reading and writing during normal operation. A second part of the array comprises the memory cells that can be read only during a power up initialization. The second part of the array is used to store configuration data for altering the physical operation of the memory array. Programmable current sources and timing delays use the stored configuration data to optimize device performance. A redundant section of memory cells is activated by the configuration data.

摘要翻译： 实现了可配置的MRAM设备。 该装置包括磁存储单元的存储器阵列。 该阵列的第一部分包括可在正常操作期间被读取和写入的存储器单元。 阵列的第二部分包括只能在上电初始化期间读取的存储器单元。 数组的第二部分用于存储用于更改存储器阵列的物理操作的配置数据。 可编程电流源和定时延迟使用存储的配置数据来优化设备性能。 存储器单元的冗余部分由配置数据激活。

公开(公告)号：US20070140033A1

公开(公告)日：2007-06-21

申请号：US11313019

申请日：2005-12-20

申请人： Hsu Yang ,  Po-Kang Wang ,  Xizeng Shi

发明人： Hsu Yang ,  Po-Kang Wang ,  Xizeng Shi

IPC分类号： G11C11/06

CPC分类号： G11C29/02 ,  G11C7/20 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1693 ,  G11C29/021 ,  G11C29/023 ,  G11C29/028 ,  G11C29/50012

摘要： A configurable MRAM device is achieved. The device comprises a memory array of magnetic memory cells. A first part of the array comprises the memory cells that can be accessed for reading and writing during normal operation. A second part of the array comprises the memory cells that can be read only during a power up initialization. The second part of the array is used to store configuration data for altering the physical operation of the memory array. Programmable current sources and timing delays use the stored configuration data to optimize device performance. A redundant section of memory cells is activated by the configuration data.

摘要翻译： 实现了可配置的MRAM设备。 该装置包括磁存储单元的存储器阵列。 该阵列的第一部分包括可在正常操作期间被读取和写入的存储器单元。 阵列的第二部分包括只能在上电初始化期间读取的存储器单元。 数组的第二部分用于存储用于更改存储器阵列的物理操作的配置数据。 可编程电流源和定时延迟使用存储的配置数据来优化设备性能。 存储器单元的冗余部分由配置数据激活。

公开(公告)号：US07211874B2

公开(公告)日：2007-05-01

申请号：US10818581

申请日：2004-04-06

申请人： Yimin Guo ,  Po-Kang Wang ,  Xizeng Shi ,  Tai Min

发明人： Yimin Guo ,  Po-Kang Wang ,  Xizeng Shi ,  Tai Min

IPC分类号： H01L29/82

CPC分类号： G11C11/16

摘要： An MTJ MRAM cell element, whose free layer has a shape induced magnetic anisotropy, is formed between orthogonal word and bit lines. The bit line is a composite line which includes a high conductivity current carrying layer and a soft adjacent magnetic layer (SAL). During operation, the soft magnetic layer concentrates the magnetic field of the current and, due to its proximity to the free layer, it magnetically couples with the free layer to produce two magnetization states of greater and lesser stability. During switching, the layer is first placed in the less stable state by a word line current, so that a small bit line current can switch its magnetization direction. After switching, the state reverts to its more stable form as a result of magnetostatic interaction with the SAL, which prevents it from being accidentally rewritten when it is not actually selected and also provides stability against thermal agitation.

摘要翻译： 在正交字和位线之间形成MTJ MRAM单元元件，其自由层具有诱导磁各向异性的形状。 位线是包括高导电性载流层和软相邻磁性层（SAL）的复合线。 在操作期间，软磁层集中了电流的磁场，并且由于其接近于自由层，其与自由层磁耦合以产生更大和更小稳定性的两种磁化状态。 在切换期间，该层首先通过字线电流处于较不稳定的状态，使得小的位线电流可以切换其磁化方向。 在切换之后，由于与SAL的静磁相互作用，状态恢复到更稳定的形式，这防止了当它不被实际选择时被意外重写，并且还提供了抗热搅动的稳定性。

公开(公告)号：US07184302B2

公开(公告)日：2007-02-27

申请号：US11093613

申请日：2005-03-30

申请人： Hsu Kai Yang ,  Po-Kang Wang ,  Xizeng Shi

发明人： Hsu Kai Yang ,  Po-Kang Wang ,  Xizeng Shi

IPC分类号： G11C11/00

CPC分类号： G11C8/14 ,  G11C11/15

摘要： In an MRAM array based on MTJs, the size of segmented word line select transistors and their associated connections become a significant overhead, especially when the operating point is chosen deep along the hard axis of the asteroid curve. This problem has been overcome by placing the big segmented word line select transistors under the MTJ array and reducing the overall MRAM cell array down to a level comparable to a simple Cross Point MRAM array.

摘要翻译： 在基于MTJ的MRAM阵列中，分段字线选择晶体管及其相关连接的大小成为显着的开销，特别是当沿着小行星曲线的硬轴选择工作点时。 通过将大分段字线选择晶体管放置在MTJ阵列下并将整个MRAM单元阵列降低到与简单的交叉点MRAM阵列相当的水平，已经克服了这个问题。

公开(公告)号：US20060227597A1

公开(公告)日：2006-10-12

申请号：US11103977

申请日：2005-04-12

申请人： Po-Kang Wang ,  Yin Rong ,  Hsu Kai Yang ,  Xizeng Shi

发明人： Po-Kang Wang ,  Yin Rong ,  Hsu Kai Yang ,  Xizeng Shi

IPC分类号： G11C11/00

CPC分类号： G11C8/08 ,  G11C11/15

摘要： The word line segment select transistor of a segmented word line array is placed on the word line current source side. This eliminates many undesirable effects currently associated with segmented word line MRAM arrays.

摘要翻译： 分段字线阵列的字线选择晶体管被放置在字线电流源侧。 这消除了目前与分段字线MRAM阵列相关联的许多不期望的影响。

公开(公告)号：US07067866B2

公开(公告)日：2006-06-27

申请号：US10606557

申请日：2003-06-26

申请人： Xizeng Shi

发明人： Xizeng Shi

IPC分类号： H01L27/108

CPC分类号： H01L27/228 ,  B82Y10/00

摘要： A method and system for providing magnetic memory cells in a magnetic memory is disclosed. The method and system include providing each magnetic memory element, providing a first write line and a second write line for each magnetic memory element. The magnetic memory element has a top portion and a bottom portion. The first write line is below the magnetic memory element and is electrically connected with the bottom portion of the magnetic memory element. The second write line is above the magnetic memory element. The second write line is electrically isolated from the magnetic memory element and oriented at an angle to the first write line. The magnetic memory cell allows for a simplified fabrication process, a reduced cell size, and an improved programming efficiency.

摘要翻译： 公开了一种在磁存储器中提供磁存储单元的方法和系统。 该方法和系统包括提供每个磁存储器元件，为每个磁存储元件提供第一写入线和第二写入线。 磁记忆元件具有顶部和底部。 第一写入线在磁存储元件下方并且与磁存储元件的底部部分电连接。 第二个写入线在磁性存储器元件之上。 第二写入线与磁存储元件电隔离并且以与第一写入线成一角度定向。 磁存储单元允许简化的制造工艺，减小的单元尺寸和改进的编程效率。

公开(公告)号：US07009266B2

公开(公告)日：2006-03-07

申请号：US10781479

申请日：2004-02-17

申请人： Xizeng Shi ,  Po-Kang Wang ,  Yimin Guo ,  Tai Min

发明人： Xizeng Shi ,  Po-Kang Wang ,  Yimin Guo ,  Tai Min

IPC分类号： H01L29/82 ,  H01L43/00

CPC分类号： H01L27/228 ,  B82Y10/00 ,  H01L43/08

摘要： A method and system for providing a magnetic element and a magnetic memory using the magnetic element are disclosed. The magnetic memory includes a plurality of magnetic elements. The method and system include providing a plurality of layers and a passivation layer for each of the plurality of magnetic elements. A portion of the layers in the magnetic element includes at least one magnetic layer. The plurality of layers also has a top and a plurality of sides. The passivation layer covers at least a portion of the plurality of sides.

摘要翻译： 公开了一种使用该磁性元件提供磁性元件和磁性存储器的方法和系统。 磁存储器包括多个磁性元件。 该方法和系统包括为多个磁性元件中的每一个提供多个层和钝化层。 磁性元件中的一部分层包括至少一个磁性层。 多个层还具有顶部和多个侧面。 钝化层覆盖多个边的至少一部分。

公开(公告)号：US06977838B1

公开(公告)日：2005-12-20

申请号：US10781482

申请日：2004-02-17

申请人： David Tsang ,  Xizeng Shi ,  Po-Kang Wang ,  Hsu Kai (Karl) Yang ,  David Hu

发明人： David Tsang ,  Xizeng Shi ,  Po-Kang Wang ,  Hsu Kai (Karl) Yang ,  David Hu

IPC分类号： G11C20060101 ,  G11C5/14 ,  G11C11/00 ,  G11C11/16 ,  G11C13/00

CPC分类号： G11C11/16 ,  G11C5/145

摘要： A method and system for providing a magnetic memory are disclosed. The method and system include providing a plurality of magnetic memory cells and at least one programmable current source. Each of the plurality of magnetic memory cells includes a first magnetic element. The programmable current source(s) are for programming a portion of the plurality of magnetic memory cells. Each of the programmable current source(s) includes a controller and a current source coupled to the controller. The controller is for determining a current provided by the current source and includes at least a second magnetic element. The second magnetic element(s) are substantially the same as the first magnetic element. The controller determines the current provided by the current source based on the at least the second magnetic element.

摘要翻译： 公开了一种用于提供磁存储器的方法和系统。 该方法和系统包括提供多个磁存储器单元和至少一个可编程电流源。 多个磁存储单元中的每一个包括第一磁性元件。 可编程电流源用于对多个磁存储单元的一部分进行编程。 每个可编程电流源包括耦合到控制器的控制器和电流源。 控制器用于确定由电流源提供的电流并且包括至少第二磁性元件。 第二磁性元件基本上与第一磁性元件相同。 控制器基于至少第二磁性元件确定由电流源提供的电流。