摘要:
A paper web threading apparatus for a rotary printing press, which occupies a minimum space required for the installation thereof and which enables automatic threading of a paper web to be conducted smoothly without applying any ineffective tension to the paper web which can be guided along all relevant paper web threading paths. The paper web threading apparatus includes a guide path provided along and laterally of the paper web threading path. A paper web guiding member includes a belt-shaped member having a guided end engaging portion adapted to engage with or secure the guided end of the paper web. A guiding member moving and driving device meshs with the paper we guiding member so as to move the latter along the guide path.
摘要:
An acoustic diaphragm comprising two or more laminated composite sheets, being formed into a shape with a curved surface. The composite sheet is made up of sliced wood and nonwoven fabric cloth consisting of adhesive resin, being stuck on backside of the sliced wood. Thus, it is capable of forming a three-dimensional shape, making use of natural wood characteristics, and improving unevenness of natural material properties. In one preferred embodiment, the diaphragm is woven of slit wood or other article forming the weft and synthetic or inorganic fibers forming the warp.
摘要:
An improved semiconductor processing is disclosed. In the manufacturing process, a semiconductor layer is formed and then undergoes photo annealing. A neutralizer is then introduced to the photoannealed semiconductor. The semiconductor thus formed demonstrates the SEL effect instead of the Staebler-Wronski effect.
摘要:
In production of a beryllium type diaphragm used for acoustic appliances such as speakers and microphones, formation of a crude beryllium plate by means of vacuum deposition is followed by hot cross rolling and hot pressing. Vacuum deposition well reduces production of undesirable impurities such as BeO and hot rolling increases density of the beryllium crystal structure obtained by the preceding vacuum deposition, both for betterment in acoustic and mechanical characteristics of the product such as sound pressure and mechanical strength.
摘要:
A process for preparing a 2-carbamoylocxyalkyl-1,4-dihydropyridine derivative represented by the general formula: ##STR1## which comprises: (a) reacting a 3-amino-3-carbamoyloxyalkylacrylic acid derivative represented by the general formula: ##STR2## with a benzylidene compound represented by the general formula: ##STR3## (b) reacting the 3-amino-3-carbamoyloxyalkylacrylic acid derivative of the general formula II with an aldehyde compound represented by the general formula: ##STR4## and a .beta.-keto-ester compound represented by the general formula:R.sup.4 --CO--CH.sub.2 --COOR.sup.2 (V)(c) reacting a 3-carbamoyloxyalkylpropiolic acid derivative represented by the general formula: ##STR5## with the benzylidene compound of the general formula III and ammonia or its salt; or(d) reacting the 3-carbamoyloxyalkylpropiolic acid derivative of the general formula VI with the aldehyde compound of the general formula IV, the .beta.-keto-ester compound of the general formula V and ammonia or its salt.
摘要:
A process for preparing a 2-carbamoyloxyalkyl-1,4-dihydropyridine derivative represented by the general formula: ##STR1## which comprises: (a) reacting a 3-amino-3-carbamoyloxyalkylacrylic acid derivative represented by the general formula: ##STR2## with a benzylidene compound represented by the general formula: ##STR3## (b) reacting the 3-amino-3-carbamoyloxyalkylacrylic acid derivative of the general formula II with an aldehyde compound represented by the general formula: ##STR4## and a .beta.-keto-ester compound represented by the general formula:R.sup.4 --CO--CH.sub.2 --COOR.sup.2 (V)(c) reacting a 3-carbamoyloxyalkylpropiolic acid derivative represented by the general formula: ##STR5## with the benzylidene compound of the general formula III and ammonia or its salt; or(d) reacting the 3-carbamoyloxyalkylpropiolic acid derivative of the general formula VI with the aldehyde compound of the general formula IV, the .beta.-keto-ester compound of the general formula V and ammonia or its salt.
摘要:
In production of a gap spacer for magnetic heads in electric and electronic appliances, accumulation of a non-magnetic material insoluble to acids or alkalis on a thin base soluble to these solvents is employed with use of a proper mask as a substitute for the conventional rolling process. Stable growth in thickness of the non-magnetic material during the accumulation process assures highly precise thickness uniformity of the product via easy time control of the process and absence of the rolling process allows broader freedom in choice of the material.
摘要:
In a method of controlling a floating zone of a semiconductor rod of the present invention shown in FIG. 1, the diameter D.sub.s at a crystallization boundary of a crystal and the axial length of the floating zone are indirectly controlled by controlling a diameter D.sub.m of a crystallizing-side melt shoulder portion and the diameter D.sub.n of a constricted melt portion, respectively. Since these diameters D.sub.m and D.sub.n are used for predicting D.sub.s and L to be obtained after a given time has passed, the response speed and stability of the control are improved as compared with the direct control of D.sub.s and L. An apparatus for controlling a floating zone of a semiconductor rod of the present invention performs the above-described method. In another method, the zone length is directly or indirectly controlled by regulating a relative moving speed of the melting-side semiconductor rod relative to the heater, and the diameter D.sub.s at the crystallization boundary of the crystal is directly or indirectly controlled by regulating the electrical power supplied to the heater.
摘要:
An improved semiconductor processing is disclosed. In the manufacturing process, fluorine gas is introduced just after formation of semiconductor layer in a reaction. The semiconductor thus formed demonstrates SEL effect in place of Staebler-Wronski effect.
摘要:
An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for processing a semiconductor device is shown. According to the invention, gaps produced during the fabricating process of the semiconductor layer are filled with insulator in advance of deposition of electrodes. By virtue of this configuration, short current paths do not result when electrodes are provided on the semiconductor layer.