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    Functional plant, promoter to be used for producing the functional plant and method of using the same
    61.
    发明申请
    Functional plant, promoter to be used for producing the functional plant and method of using the same 审中-公开
    功能植物，用于生产功能植物的促进剂及其使用方法

    公开(公告)号：US20050223438A1

    公开(公告)日：2005-10-06

    申请号：US10508810

    申请日：2002-03-22

    申请人： Hiroshi Otsuki ,  Masahiro Ohshima

    发明人： Hiroshi Otsuki ,  Masahiro Ohshima

    IPC分类号： A01H5/00 ,  C07K14/415 ,  C12N15/09 ,  C12N15/82 ,  C12N15/00

    CPC分类号： C12N15/8216 ,  C12N15/8222 ,  C12N15/8225 ,  C12N15/823

    摘要： It is intended to construct a system for arbitrarily expressing a desired gene at a desired site in a plant. This object can be solved by providing a plant containing at least one promoter allowing a specific level of expression and a gene ligated to this promoter in an operable manner wherein the specificity of the promoter is determined based on the expression frequency of a gene containing the promoter in a cDNA database involving the promoter-containing gene. As a cDNA database, use may be made of those published in the genome project.

    摘要翻译： 旨在构建用于在植物中的所需位点任意表达所需基因的系统。 该目的可以通过提供含有至少一种启动子的植物来解决，所述启动子允许特定水平的表达，并以可操作的方式连接到该启动子的基因，其中基于含有启动子的基因的表达频率确定启动子的特异性 在涉及含启动子的基因的cDNA数据库中。 作为cDNA数据库，可以使用基因组计划中公布的那些数据库。

    Method for measuring thickness of oxide film
    62.
    发明授权
    Method for measuring thickness of oxide film 失效
    测量氧化膜厚度的方法

    公开(公告)号：US06885466B1

    公开(公告)日：2005-04-26

    申请号：US09616372

    申请日：2000-07-13

    申请人： Atsushi Komura ,  Hisato Kato ,  Hiroshi Otsuki

    发明人： Atsushi Komura ,  Hisato Kato ,  Hiroshi Otsuki

    IPC分类号： G01B11/06 ,  G01B11/28 ,  G01J4/00

    CPC分类号： G01B11/0616

    摘要： In a process of manufacturing a semiconductor device, after a gate oxide film is formed, the thickness of the gate oxide film is measured by measuring an exposure period defined from a time at which the oxide film is formed to a time at which the thickness of the oxide film is measured. In addition, if necessary, the measurement of the oxide film is corrected to determine the real thickness based on the exposure period. Accordingly, the thickness of the gate oxide film can be measured accurately.

    摘要翻译： 在制造半导体器件的过程中，在形成栅极氧化膜之后，通过测量从形成氧化物膜的时间定义的曝光时间到测量氧化膜厚度的时间来测量栅极氧化膜的厚度 测量氧化膜。 此外，如果需要，校正氧化膜的测量以基于曝光周期确定实际厚度。 因此，可以精确地测量栅极氧化膜的厚度。

    Semiconductor treatment apparatus
    63.
    发明授权
    Semiconductor treatment apparatus 失效
    半导体治疗仪

    公开(公告)号：US5575854A

    公开(公告)日：1996-11-19

    申请号：US366452

    申请日：1994-12-30

    申请人： Shimpei Jinnouchi ,  Hiroshi Kuno ,  Hiroshi Otsuki

    发明人： Shimpei Jinnouchi ,  Hiroshi Kuno ,  Hiroshi Otsuki

    IPC分类号： C23C16/448 ,  C23C26/00

    CPC分类号： C23C16/4482

    摘要： A CVD apparatus in which a process gas containing a carrier gas and a raw material gas is supplied to a process chamber through a supply line. A first part of the carrier gas is supplied from a primary line through a bubbling line and passed through a raw material liquid to derive the raw material gas, and then sent to the supply line. A second part of the carrier gas is supplied from the primary line through a bypass line directly to the supply line. Electromagnetic valves are provided on each of the bubbling line and the bypass line and flow sensors are provided on each of the primary line and the supply line. Each flow sensor has a reference element and a heated element, each of which has a thermally-sensitive and electrically conductive wire. Signals from the sensors are supplied to a flow controller, which measures the flow rate of the raw material gas by comparing the measured value with a reference value, and adjusts the opening degrees of the electromagnetic valves on the basis of the comparison.

    摘要翻译： 一种CVD装置，其中含有载气和原料气体的处理气体通过供给管线供给到处理室。 载气的第一部分从初级管路通过鼓泡管道供给，并通过原料液，得到原料气体，然后送至供给管路。 载气的第二部分从主线通过旁路管线直接供给到供应管线。 在每个起泡线和旁路管上设置有电磁阀，并且在主线路和供给线路中的每一个上设置流量传感器。 每个流量传感器具有参考元件和加热元件，每个元件具有热敏和导电的导线。 来自传感器的信号被提供给流量控制器，其通过将测量值与参考值进行比较来测量原料气体的流量，并且基于该比较来调节电磁阀的开度。

    Method of embedding inserts in a thermoplastic body
    68.
    发明授权
    Method of embedding inserts in a thermoplastic body 失效
    在热塑体中嵌入插件的方法

    公开(公告)号：US3998824A

    公开(公告)日：1976-12-21

    申请号：US589900

    申请日：1975-06-24

    申请人： Hiroshi Otsuki ,  Hideharu Yamamoto

    发明人： Hiroshi Otsuki ,  Hideharu Yamamoto

    IPC分类号： B29C65/64 ,  G11B33/02 ,  B29D3/00 ,  B29F5/00

    CPC分类号： B29C65/645 ,  B29C66/8322 ,  G11B33/02

    摘要： In order to secure a metal element, such as, a pin or shaft, to a synthetic resin body so as to project from one surface of the latter, the body is formed with a hole extending from that one surface to the opposite surface of the body and preferably having a cross-sectional area smaller than that of a mounting portion at an end of the metal element, the metal element is inserted into the hole from that opposite surface, and the metal element is pressed in the axial direction of the hole toward the surface from which the metal element is to project so as to urge the mounting portion into the hole while softening the region of the body contacted by the mounting portion until the latter is contained in the hole and the metal element projects to the desired extent from the body, whereupon the body is allowed to harden at the region of its contact with the mounting portion. Preferably, the synthetic resin of the body is thermoplastic and is softened at its region of contact with the mounting portion by heat conducted through the latter from a heat source urged against the mounting portion for simultaneously pressing the mounting portion into the hole.