公开(公告)号：US20180236538A1

公开(公告)日：2018-08-23

申请号：US15901822

申请日：2018-02-21

申请人： Desktop Metal, Inc.

发明人： Michael Andrew Gibson ,  Nihan Tuncer ,  Christopher Allan Schuh ,  Michael J. Tarkanian

IPC分类号： B22F3/00 ,  B22F3/10 ,  B22F1/00 ,  B22F1/02 ,  B33Y10/00 ,  B33Y70/00

CPC分类号： B22F3/008 ,  B22F1/0014 ,  B22F1/0018 ,  B22F1/0022 ,  B22F1/0025 ,  B22F1/0062 ,  B22F1/02 ,  B22F3/10 ,  B22F7/02 ,  B22F2301/00 ,  B22F2301/052 ,  B22F2301/10 ,  B22F2301/15 ,  B22F2301/20 ,  B22F2301/255 ,  B22F2301/35 ,  B22F2302/10 ,  B22F2302/20 ,  B22F2302/25 ,  B22F2302/45 ,  B22F2304/054 ,  B22F2304/056 ,  B22F2304/10 ,  B33Y10/00 ,  B33Y50/02 ,  B33Y70/00 ,  B33Y80/00 ,  B82Y30/00 ,  C08G81/025 ,  C09D11/023 ,  C09D11/102 ,  C09D11/106 ,  C09D11/34

摘要： Devices, systems, and methods are directed to the use of nanoparticles for improving fabrication of three-dimensional objects formed through layer-by-layer delivery of an ink onto a powder of metal particles in a powder bed. More specifically, the ink may include metal nanoparticles suspended in a non-oxidizing aqueous solution to facilitate maintaining the metal nanoparticles in a stable form, providing a shelf-life suitable for transportation and storage of the ink in large-scale commercial operations. The ink may be delivered onto the powder of the metal particles in the powder bed, where the nanoparticles may interact with the metal particles to improve strength of the three-dimensional objects being fabricated. Also, or instead, the nanoparticles may reduce the likelihood of defects associated with subsequent processing of the three-dimensional objects (e.g., slumping and shrinking and/or inadequate densification of the final part).

公开(公告)号：US20180209034A1

公开(公告)日：2018-07-26

申请号：US15745994

申请日：2016-07-26

申请人： Hitachi Metals, Ltd.

发明人： Masashi KAMINADA ,  Kazuya SAITOH ,  Yuu TAMADA ,  Hide UENO

IPC分类号： C23C14/34 ,  C22C27/04

CPC分类号： C23C14/3414 ,  B22F3/14 ,  B22F3/15 ,  B22F2301/20 ,  C22C1/045 ,  C22C27/04 ,  C23C14/165

摘要： Provided is a target material which suppresses contamination of a gate electrode during sputtering and which is used to form a gate electrode capable of achieving stable TFT characteristics. This target material contains a total of 50 atom % or more of one or more elements (M) selected from among the group consisting of W, Nb, Ta, Ni, Ti and Cr, with the remainder comprising Mo and unavoidable impurities, wherein a content of K, which is one of the unavoidable impurities, is preferably 0.4 to 20.0 ppm by mass and a content of W as the element (M) is preferably 10 to 50 atom %.

公开(公告)号：US20180182573A1

公开(公告)日：2018-06-28

申请号：US15738275

申请日：2016-06-21

申请人： MEIDENSHA CORPORATION

发明人： Shota HAYASHI ,  Keita ISHIKAWA ,  Kenta YAMAMURA ,  Kosuke HASEGAWA

IPC分类号： H01H11/04 ,  B22F3/10 ,  B22F1/00 ,  C22C1/04 ,  C22C9/00 ,  C22C30/02 ,  H01H33/664 ,  H01H1/02

CPC分类号： H01H11/048 ,  B22F1/00 ,  B22F1/0011 ,  B22F3/10 ,  B22F7/00 ,  B22F2301/10 ,  B22F2301/20 ,  C22C1/04 ,  C22C9/00 ,  C22C9/10 ,  C22C30/02 ,  H01H1/0206 ,  H01H11/04 ,  H01H33/664

摘要： It is a method for manufacturing an electrode material containing Cu, Cr, a heat-resistant element, and a low melting metal. A Cr powder and a heat-resistant element powder are mixed together in a ratio such that the Cr is greater than the heat-resistant element by weight. The mixed powder of the heat-resistant element and the Cr powder is baked. A MoCr solid solution obtained by the baking and containing a solid solution of the heat-resistant element and the Cr is pulverized and then classified. The classified MoCr solid solution powder, a Cu powder, and a low-melting metal powder are mixed together, followed by sintering at a temperature that is 1010° C. or higher and is lower than 1038° C., thereby obtaining the electrode material.

公开(公告)号：US09926623B2

公开(公告)日：2018-03-27

申请号：US15061566

申请日：2016-03-04

申请人： Brad Lemon ,  Joseph Hirt ,  Timothy Welling ,  James G. Daily, III ,  David Meendering ,  Gary Rozak ,  Jerome O'Grady ,  Prabhat Kumar ,  Steven A. Miller ,  Rong-chein Richard Wu ,  David G. Schwartz

发明人： Brad Lemon ,  Joseph Hirt ,  Timothy Welling ,  James G. Daily, III ,  David Meendering ,  Gary Rozak ,  Jerome O'Grady ,  Prabhat Kumar ,  Steven A. Miller ,  Rong-chein Richard Wu ,  David G. Schwartz

IPC分类号： C23C14/34 ,  B22F3/16 ,  C22C1/04 ,  C22C27/04 ,  C23C14/35 ,  C23C14/46 ,  B22F1/00 ,  B22F5/00 ,  C21D8/02 ,  C22F1/18 ,  C23C14/14 ,  B22F3/24

CPC分类号： C23C14/3414 ,  B22F1/0003 ,  B22F3/16 ,  B22F3/162 ,  B22F3/24 ,  B22F5/006 ,  B22F2003/248 ,  B22F2301/20 ,  B22F2998/00 ,  B22F2998/10 ,  C21D8/0221 ,  C21D8/0247 ,  C22C1/045 ,  C22C27/04 ,  C22F1/18 ,  C23C14/14 ,  C23C14/3478 ,  C23C14/3485 ,  C23C14/35 ,  C23C14/46 ,  B22F3/172 ,  B22F3/20 ,  B22F3/04 ,  B22F3/10

摘要： In various embodiments, sputtering targets are formed by introducing molybdenum powder into a sheet bar mold, pressing the powder to form a sheet bar, sintering the sheet bar to form an ingot having a density of at least 90% of a theoretical density, preheating the ingot, rolling the ingot to form a plate, and heat treating the plate.

公开(公告)号：US20180079002A1

公开(公告)日：2018-03-22

申请号：US15560084

申请日：2016-03-18

申请人： MITSUBISHI MATERIALS CORPORATION

发明人： Wardoyo AKHMADI EKO ,  Toshihiko MATSUO ,  Chihiro SAKURAZAWA ,  Shotaro MATSUMOTO

IPC分类号： B22F3/10 ,  B22F1/00 ,  C23C14/34 ,  C22C27/04

CPC分类号： B22F3/10 ,  B22F1/0011 ,  B22F3/14 ,  B22F2201/20 ,  B22F2301/20 ,  B22F2304/10 ,  B22F2998/10 ,  C22C1/045 ,  C22C27/04 ,  C23C14/3414 ,  B22F1/0003

摘要： A polycrystalline tungsten compact, having high density and a fine grain structure is produced by: preparing a raw material powder made of W particles, a raw material powder where W powder and an alloy particle powder of one or more selected from Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and Mn are blended, or a green compact thereof; inserting them in a pressure sintering apparatus; and sintering them in a state where a pressing of 2.55-13 GPa is loaded on the raw material powders or the green compacts at 1200° C. to a melting point. A relative density of the compact is 99% or more, a porosity of the compact measured in an arbitrary cross section of the compact is 0.2 area % or less, an average crystal grain size is 50 μm or less, and an average aspect ratio of crystal grains is 1 to 2.5.

公开(公告)号：US20180047516A1

公开(公告)日：2018-02-15

申请号：US15792785

申请日：2017-10-25

申请人： Global Advanced Metals USA, Inc.

发明人： Ryosuke Matsuoka ,  Eiji Kataoka ,  Yoshikazu Noguchi ,  John Koenitzer ,  Sridhar Venigalla

IPC分类号： H01G9/052 ,  B22F1/00 ,  H01G9/15

CPC分类号： H01G9/0525 ,  B22F1/0096 ,  B22F2998/10 ,  B22F2999/00 ,  H01G9/052 ,  H01G9/15 ,  B22F9/24 ,  B22F9/04 ,  B22F1/0085 ,  B22F3/10 ,  B22F2301/20

摘要： A method for producing agglomerated tantalum particles, comprising: a step for grinding secondary tantalum particles, which are obtained by reducing a tantalum salt, and adding water thereto to give a water-containing mass; a step for drying said water-containing mass to give a dry mass; a step for sieving said dry mass to give spherical particles; and a step for heating said spherical particles. A mixed tantalum powder comprising a mixture of agglomerated tantalum particles (X) with agglomerated tantalum particles (Y), wherein said agglomerated tantalum particles (X) show a cumulative percentage of particles with particle size of 3 μm or less of 5 mass % or less after 25 W ultrasonic radiation for 10 min, while said agglomerated tantalum particles (Y) show a cumulative percentage of particles with particle size of 3 μm or less of 10 mass % or more after 25 W ultrasonic radiation for 10 min.

公开(公告)号：US20180021857A1

公开(公告)日：2018-01-25

申请号：US15365776

申请日：2016-11-30

申请人： NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

发明人： CHIA-SHIH LIN ,  CHAO-NAN WEI ,  CUO-YO NIEH ,  HUI-YUN BOR ,  KUAN-ZONG FUNG

IPC分类号： B22F9/30 ,  B22F9/04 ,  B22F1/00

CPC分类号： B22F9/30 ,  B22F1/0003 ,  B22F3/1017 ,  B22F9/04 ,  B22F2009/043 ,  B22F2301/20 ,  B22F2998/10 ,  C22C1/05 ,  C22C1/1084 ,  B22F1/0085 ,  B22F3/02 ,  B22F3/1035

摘要： A method of preparing a tungsten metal material with high purity, comprising the steps of (A) providing a tungsten metal powder to mix with a metal nitrate to form a mixed powder slurry; (B) ball-grinding the mixed powder slurry to obtain a uniformly mixed powder; (C) sintering the uniformly mixed powder to obtain the tungsten metal material with high purity. Accordingly, the tungsten metal material with purity more than 99.9% can be prepared, so as to prepare the tungsten metal target.

公开(公告)号：US20170306447A1

公开(公告)日：2017-10-26

申请号：US15492996

申请日：2017-04-20

申请人： ARCONIC INC.

发明人： Jen Lin ,  Xinyan Yan

IPC分类号： C22C14/00 ,  B33Y10/00 ,  C22C30/00 ,  B23K35/32 ,  B23K35/02 ,  B23K15/00 ,  B23K10/02 ,  C22F1/00 ,  B22F3/20 ,  B22F3/18 ,  B22F3/17 ,  B22F3/15 ,  B22F1/00 ,  B33Y70/00 ,  C22F1/18

CPC分类号： C22C14/00 ,  B22F1/0003 ,  B22F3/1055 ,  B22F3/15 ,  B22F3/17 ,  B22F3/18 ,  B22F3/20 ,  B22F5/009 ,  B22F5/04 ,  B22F2301/20 ,  B22F2998/10 ,  B22F2999/00 ,  B23K10/027 ,  B23K15/0086 ,  B23K15/0093 ,  B23K26/0006 ,  B23K26/342 ,  B23K35/0261 ,  B23K35/325 ,  B23K2103/52 ,  B33Y10/00 ,  B33Y70/00 ,  C22C30/00 ,  C22F1/002 ,  C22F1/183 ,  Y02P10/295 ,  B22F3/1028 ,  B22F9/08

摘要： The present disclosure relates to new materials comprising Al, Ti, and Zr. The new materials may realize a single phase field of a hexagonal close-packed (hcp) solid solution structure immediately below the solidus temperature of the material. The new materials may include at least one precipitate phase and have a solvus temperature of at least 1240° C. The new materials may include 29.0-42.4 wt. % Al, 41.2-59.9 wt. % Ti, and 10.3-24.1 wt. % Zr. In one embodiment, the precipitate is selected from the group consisting of the L10 phase, the Al2Zr phase, and combinations thereof. The new alloys may realize improved high temperature properties.

公开(公告)号：US20170283916A1

公开(公告)日：2017-10-05

申请号：US15509290

申请日：2014-09-11

申请人： ISHIHARA CHEMICAL CO., LTD.

发明人： Takayuki MAESHIMA ,  Issei SATOH ,  Hisakazu SAKAI ,  Jun FURUTANI ,  Yoshihiko TAKATA ,  Tsukasa KONDO

IPC分类号： C22C27/02 ,  B22F9/22 ,  H01G9/052 ,  B22F3/24 ,  H01G9/042 ,  B22F1/00 ,  B22F3/10

CPC分类号： C22C27/02 ,  B22F1/00 ,  B22F1/0018 ,  B22F1/0059 ,  B22F3/10 ,  B22F3/24 ,  B22F5/00 ,  B22F9/22 ,  B22F2003/242 ,  B22F2301/20 ,  H01G9/042 ,  H01G9/052 ,  H01G9/15

摘要： A Ta-Nb alloy powder which has provides a capacitor having a higher capacitance than a Ta capacitor and a better thermal stability in terms of an oxide film is better than a Nb capacitor, the Ta-Nb alloy powder being a Ta-Nb alloy powder produced by a thermal CVD method, wherein a content of Nb is 1 to 50 mass %, and an average particle diameter of primary particles is 30 to 200 nm, preferably, a CV value per unit mass of the powder (μF·V/g) is 250 kμF·V/g or more, or further, a CV value per unit volume (μF·V/mm3) in terms of a molded body whose molding density ρ (g/cm3) is ρc (g/cm3)=−0.012RNb+3.57, wherein RNb: Nb content (mass %) in an alloy, is 900 μF·V/mm3 or more, and an anode element for a solid electrolytic capacitor using the alloy powder.

公开(公告)号：US09669460B2

公开(公告)日：2017-06-06

申请号：US14357953

申请日：2012-08-29

申请人： Kazumi Naito ,  Shoji Yabe

发明人： Kazumi Naito ,  Shoji Yabe

IPC分类号： B22F1/00 ,  B22F9/04 ,  H01G9/052 ,  B82Y30/00

CPC分类号： B22F1/0014 ,  B22F1/0011 ,  B22F1/0018 ,  B22F1/0088 ,  B22F9/04 ,  B22F9/16 ,  B22F2301/20 ,  B22F2304/10 ,  B22F2998/10 ,  B82Y30/00 ,  H01G9/042 ,  H01G9/0525 ,  Y10T428/12181 ,  B22F9/22 ,  B22F1/02

摘要： A method for finely powdering tungsten powder, which includes dispersing tungsten powder in an aqueous solution containing an oxidizing agent to form an oxide film in the surface of the tungsten powder and removing the oxide film with an alkaline aqueous solution. Also disclosed is a method for producing fine tungsten powder, which includes obtaining tungsten powder having an average particle size of 0.05 to 0.5 μm by a process including the above method for finely powdering. Also disclosed is a tungsten powder having an average particle size of 0.05 to 0.5 μm, in which the dMS value (product of an average particle size d (μm), true density M (g/cm3) and BET specific surface area S (m2/g)) is within the range of 6±0.8.