公开(公告)号：US5528099A

公开(公告)日：1996-06-18

申请号：US378333

申请日：1995-01-26

申请人： Chenggang Xie ,  Nalin Kumar

发明人： Chenggang Xie ,  Nalin Kumar

IPC分类号： H01J1/304 ,  H01J3/02 ,  H01J1/30

CPC分类号： H01J1/3042 ,  H01J3/022 ,  H01J2329/00

摘要： Lateral luminescent field emitter devices for use in flat panel displays and a method of manufacturing are described. The device comprises a flat substrate, an anode disposed on the substrate, and a cathode disposed on the substrate, the cathode providing an electron emission surface capable of emitting electrons laterally across a gap to a major portion of an adjacent surface of the anode.

摘要翻译： 描述了用于平板显示器的侧面发光场发射器件和制造方法。 该器件包括平坦的衬底，设置在衬底上的阳极和设置在衬底上的阴极，阴极提供能够横向跨过阳极的相邻表面的主要部分的间隙发射电子的电子发射表面。

公开(公告)号：US5469014A

公开(公告)日：1995-11-21

申请号：US829251

申请日：1992-02-03

申请人： Shigeo Itoh ,  Teruo Watanabe ,  Makoto Miyamori ,  Norio Nishimura ,  Junji Itoh ,  Seigo Kanemaru

发明人： Shigeo Itoh ,  Teruo Watanabe ,  Makoto Miyamori ,  Norio Nishimura ,  Junji Itoh ,  Seigo Kanemaru

IPC分类号： H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J21/10 ,  H01J1/30

CPC分类号： H01J21/105 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30426

摘要： A field emission element including a gate and an emitter and capable of preventing any of the element oxide layer from being formed on a tip of the emitter to prevent a decrease in emission current, unstable operation and an increase in noise. The gate has a surface formed of a material of oxygen bonding strength higher than that of a material for at least a tip surface of the emitter, so that oxygen atoms and molecules containing oxygen entering the gate may be captured by adsorption on the gate to prevent formation of any oxide layer on the emitter. When a portion of the emitter other than the tip surface is formed of a material of oxygen bonding strength higher than that of the material for the tip surface, formation of any oxide layer on the tip surface of the emitter is minimized.

摘要翻译： 一种场致发射元件，包括栅极和发射极，并且能够防止在发射极的顶端上形成任何元素氧化物层，以防止发射电流降低，操作不稳定和噪声增加。 栅极具有由氧键合强度高于发光体的至少尖端表面的材料的表面形成的表面，从而可以通过栅极上的吸附捕获氧原子和进入栅极的分子，以防止 在发射体上形成任何氧化物层。 当除尖端表面之外的发射体的一部分由氧结合强度高于尖端表面材料的材料形成时，在发射极的顶端表面上形成任何氧化物层都被最小化。

公开(公告)号：US5461280A

公开(公告)日：1995-10-24

申请号：US830977

申请日：1992-02-10

申请人： Robert C. Kane

发明人： Robert C. Kane

IPC分类号： H01J1/304 ,  H01J1/34 ,  H01J40/14 ,  H01J40/16

CPC分类号： H01J40/14 ,  H01J1/3042 ,  H01J1/34 ,  H01J2201/317

摘要： A cold cathode field emission device employs photon energy and electric field induced electron emission enhancement to provide subthreshold photoelectric emission; and, alternatively, photon-enhanced cold cathode field emission.

摘要翻译： 冷阴极场发射器件采用光子能量和电场感应电子发射增强来提供亚阈值光电发射; 以及光子增强型冷阴极场发射。

公开(公告)号：US5451830A

公开(公告)日：1995-09-19

申请号：US184919

申请日：1994-01-24

申请人： Jammy C. Huang

发明人： Jammy C. Huang

IPC分类号： H01J1/304 ,  H01J9/02 ,  H01J1/30

CPC分类号： H01J9/025 ,  H01J1/3042 ,  H01J2201/319 ,  H01J2329/00

摘要： A high resolution matrix addressed flat panel display having single field emission microtip redundancy with resistive base is described. Parallel, spaced conductors acting as cathode columns for the display are over the substrate. A layer of insulation is formed over the cathode columns. Parallel, spaced conductors acting as gate lines for the display are formed over the layer of insulation at a right angle to the cathode columns. The intersections of the cathode columns and gate lines are pixels of the display. A plurality of openings at the pixels extend through the insulating layer and the gate lines. At each of the openings is a resistive base connected to the cathode conductor column. A small field emission microtip is formed on each resistive base, extending up from the resistive base and into the openings, the height of the microtip being many times smaller than the height of the resistive base.

摘要翻译： 描述了具有具有电阻基座的单场发射微尖端冗余的高分辨率矩阵寻址的平板显示器。 作为显示器的阴极柱的平行，间隔的导体在衬底上。 在阴极柱上形成绝缘层。 作为显示器的栅极线的平行的隔开的导体以与阴极柱成直角的绝缘层形成。 阴极柱和栅极线的交点是显示器的像素。 像素处的多个开口延伸穿过绝缘层和栅极线。 在每个开口处是连接到阴极导体柱的电阻基座。 在每个电阻基底上形成小的场发射微尖端，从电阻基极向上延伸到开口中，微尖端的高度比电阻基底的高度小很多倍。

公开(公告)号：US5449310A

公开(公告)日：1995-09-12

申请号：US222597

申请日：1994-04-04

申请人： Reinhard Stengl ,  Wolfgang Hoenlein

发明人： Reinhard Stengl ,  Wolfgang Hoenlein

IPC分类号： H01J1/304 ,  H01J9/02 ,  H01J21/10 ,  H01J1/30

CPC分类号： H01J1/3042 ,  H01J21/105 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30407

摘要： Rod-shaped or cylindrical structures in the nm range on a substrate of silicon are manufactured. A first cylinder of silicon is selectively epitaxially deposited in the hole of a mask layer of oxide, and the mask layer is removed. The silicon is then oxidized to form an oxide layer having such a thickness that a thinner, second cylinder of silicon having practically the same height as the first cylinder remains. In a last step, this oxide layer is removed, so that the second cylinder forms a freestanding silicon rod on the surface of the substrate.

摘要翻译： 制造在硅衬底上的nm范围内的棒状或圆柱形结构。 硅的第一圆柱体被选择性地外延沉积在氧化物的掩模层的孔中，并且去除掩模层。 然后将硅氧化以形成具有这样厚度的氧化物层，使得具有与第一气缸几乎具有相同高度的较薄的第二硅柱体保持不变。 在最后一步中，去除该氧化物层，使得第二圆柱体在基底表面上形成独立的硅棒。

公开(公告)号：US5440579A

公开(公告)日：1995-08-08

申请号：US162067

申请日：1993-12-09

申请人： Engin Molva ,  Roger Accomo

发明人： Engin Molva ,  Roger Accomo

IPC分类号： H01J1/30 ,  H01J1/304 ,  H01S3/0959 ,  H01S5/00 ,  H01S5/04 ,  H01S3/097

CPC分类号： H01J1/3042 ,  H01S5/04

摘要： Compact electron gun having a microdot electron source and a semiconductor laser using said gun for electronic pumping. A compact electron gun is provided having a microdot electron emitting source (2), an anode (8) spaced from the microdots, means (16) for applying a high voltage to the and, array (10) of electrodes distributed around the bean emitted by the source for the strip focussing thereof onto the anode. The array also serves as an electrostatic screen for the source with respect to the high voltage of the array. The array is positioned between the source and the anode and has at least two pairs of electrodes (18, 18b, 20a, 20b) of different dimensions which are raised to respectively positive and negative voltages. The positive and the negative voltages produce a weak electrostatic field between the source and the electrode array and a strong electrostatic field between the electrode array and the anode. The electron gun also has means for applying a medium voltage to the electrode array and means for applying an appropriate voltage to the microdots.

摘要翻译： PCT No.PCT / FR93 / 00353 Sec。 371日期1993年12月9日第 102（e）日期1993年12月9日PCT 1993年4月8日PCT PCT。 公开号WO93 / 21646 日期：1993年10月28日。具有微点电子源的激光电子枪和使用所述枪进行电子泵浦的半导体激光器。 提供了具有微点电子发射源（2），与微点间隔开的阳极（8）的小型电子枪，用于向发射的豆周围的电极施加高电压的装置（16） 通过源极将其聚焦到阳极上。 该阵列还用作相对于阵列的高电压的源的静电屏。 阵列位于源极和阳极之间，并且具有不同尺寸的至少两对电极（18,18b，20a，20b），其被提升到正电压和负电压。 正电压和负电压在源极和电极阵列之间产生弱静电场，并且在电极阵列和阳极之间产生强静电场。 电子枪还具有向电极阵列施加中等电压的装置和用于向微点提供适当电压的装置。

公开(公告)号：US5343110A

公开(公告)日：1994-08-30

申请号：US889938

申请日：1992-06-02

申请人： Akira Kaneko ,  Toru Kanno ,  Keiko Morishita

发明人： Akira Kaneko ,  Toru Kanno ,  Keiko Morishita

IPC分类号： H01J1/304 ,  H01J1/13 ,  H01J1/16

CPC分类号： H01J1/3042

摘要： An electron emission element includes a substrate, a base electrode formed on the substrate, an emitter connecting portion formed on a part of the base electrode, and an emitter formed on the emitter connecting portion and having a wedge. The wedge of the emitter has a mesa shape in section. The wedge of the emitter has an upper surface and a lower surface which is wider than the upper surface. The wedge of the emitter has an edge provided with a lower corner of an acute angle in section. The electron emission element further includes an insulating layer formed on the substrate and spaced from the wedge of the emitter by a given gap, and a control electrode formed on the insulating layer for enabling electrons to be emitted from the edge of the emitter. The wedge of the emitter may have an inverted-mesa shape.

摘要翻译： 电子发射元件包括基板，形成在基板上的基极，形成在基极的一部分上的发射极连接部分和形成在发射极连接部分上并具有楔形的发射极。 发射器的楔形部分具有台面形状。 发射器的楔具有比上表面宽的上表面和下表面。 发射器的楔子具有边缘，该边缘设有截面为锐角的下角。 电子发射元件还包括形成在衬底上并且与发射器的楔形物间隔给定间隙的绝缘层，以及形成在绝缘层上用于使电子能够从发射极的边缘发射的控制电极。 发射器的楔形物可以具有倒置的台面形状。

公开(公告)号：US5329207A

公开(公告)日：1994-07-12

申请号：US883629

申请日：1992-05-13

申请人： David A. Cathey ,  J. Brett Rolfson ,  Tyler A. Lowrey ,  Trung T. Doan

发明人： David A. Cathey ,  J. Brett Rolfson ,  Tyler A. Lowrey ,  Trung T. Doan

IPC分类号： H01J1/30 ,  H01J1/304 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12

CPC分类号： H01J1/3042 ,  H01J9/025 ,  H01J2201/30407

摘要： A baseplate for a flat panel display comprising relatively thick semiconductor substrate, wherein the semiconductor substrate is a macro-grain polycrystalline substrate, which is amorphized by ion implantation or reformed by recrystallization, to obscure the grain boundaries, thereafter redundant circuitry may be fabricated thereon to further enhance product yield.

摘要翻译： 一种用于平板显示器的底板，包括相对厚的半导体衬底，其中半导体衬底是通过离子注入而非晶化或通过重结晶重新形成的宏晶多晶衬底，以掩盖晶界，此后可制造冗余电路， 进一步提高产品产量。

公开(公告)号：US5319233A

公开(公告)日：1994-06-07

申请号：US882227

申请日：1992-05-13

申请人： Robert C. Kane

发明人： Robert C. Kane

IPC分类号： H01J1/304 ,  H01J1/46

CPC分类号： H01J1/3042 ,  H01J2201/319

摘要： A variety of field emission devices and structures which employ non-substrate layers of single-crystal silicon. By employing non-substrate layers of single-crystal silicon, improved emission control is achieved and improved performance controlling devices are formed within the device structure.

摘要翻译： 采用单晶硅非衬底层的各种场致发射器件和结构。 通过采用单晶硅的非衬底层，实现改进的发射控制，并且在器件结构内形成改进的性能控制器件。

公开(公告)号：US5212426A

公开(公告)日：1993-05-18

申请号：US645163

申请日：1991-01-24

申请人： Robert C. Kane

发明人： Robert C. Kane

IPC分类号： G09G3/12 ,  G09G3/22 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J29/04 ,  H01J29/48 ,  H01J29/96 ,  H01J31/12

CPC分类号： H01J1/3042 ,  H01J29/481 ,  H01J3/022 ,  H01J2201/319

摘要： An integrally controlled field emission display device (FED display) is set forth wherein at least a first controller, realized generally as a transistor device, is disposed in/on at least a layer of the FED display and is operably connected to at least one element of the field emission devices of the FED display. A plurality of integrally formed controllers may be selectively interconnected to provide selective control of groups of FEDs of the FED display in a manner that provides for integrated active addressing of the FED display.