Abstract:
Compact electron gun having a microdot electron source and a semiconductor laser using said gun for electronic pumping. A compact electron gun is provided having a microdot electron emitting source (2), an anode (8) spaced from the microdots, means (16) for applying a high voltage to the and, array (10) of electrodes distributed around the bean emitted by the source for the strip focussing thereof onto the anode. The array also serves as an electrostatic screen for the source with respect to the high voltage of the array. The array is positioned between the source and the anode and has at least two pairs of electrodes (18, 18b, 20a, 20b) of different dimensions which are raised to respectively positive and negative voltages. The positive and the negative voltages produce a weak electrostatic field between the source and the electrode array and a strong electrostatic field between the electrode array and the anode. The electron gun also has means for applying a medium voltage to the electrode array and means for applying an appropriate voltage to the microdots.
Abstract:
A semiconductor heterostructure laser cavity is disclosed which has semiconductor layers epitaxied to define four zones on a substrate. The laser cavity includes a first zone with a composition that varies continuously from a first face to a second face with a gap decreasing from the first face to the second face, the first zone ensuring an optical confinement and light guidance. A second zone constitutes an active emission zone in contact with the second face of the first zone and having at least one quantum well with a gap smaller than that of the first zone. A third zone has a gap larger than that of the at least one quantum well. The third zone ensuring an optical confinement and a light guidance, and having a composition which varies continuously from a first face to a second face with a gap which increases from the first face to the second face, the first face of the third zone being in contact with the active emission zone. A fourth zone constitutes a buffer zone which contacts the second face of the third zone and a substrate, the fourth zone serving as an optical barrier for light guiding, the first and third zones being asymmetrical with respect to the active emission zone to define an asymmetrical GRINSCH structure, one of the first and third zones constituting a surface of the semiconductor heterostructure for ensuring electron excitation and creation of electron-holes.
Abstract:
The invention relates to a microlaser cavity switched with the aid of an electrooptical material (54). Electrodes (84, 86) are produced on support elements (80, 82) and the latter are then applied on either side of the electrooptical element. Solid electrodes can also be applied on either side of the electrooptical material.
Abstract:
A microlaser having input and output mirrors defining a microlaser cavity, a solid active dielectric medium disposed in the microlaser cavity, and a pumping mechanism which pumps the microlaser and which includes at least one vertical cavity semiconductor laser. The microlaser may also include a microoptical focusing device, passive and/or active cavity switches. A plurality of such microlasers can be assembled to form a bidimensional network.
Abstract:
A microoptical component including a microlens having a focal axis and a microbeam to which said microlens, is integrally fixed said microbeam extending along an axis substantially perpendicular to the focal axis of the microlens and undergoing elastic deformations along an axis substantially perpendicular to the focal axis of the microlens and to the axis along which the microbeam extends.
Abstract:
A self-aligned, monolithic, solid microlaser with passive switching by a saturable absorber and a production process therefor. The cavity for the microlaser has a solid active medium, a saturable absorber, an entrance mirror and an exit mirror, wherein the saturable absorber is a thin film of saturable absorbent material directly deposited on the solid active medium.
Abstract:
An optical pump device including a pump source optically connected to an optical divider including one input channel and n output channels. The input channel is configured to receive a pump wave derived from the source and the n output channels are configured to output n pump waves, where n is an integer greater than 1. The pump device can be used in an optical amplification device. The device has applications in all domains in which several optical pumps are necessary, and more particularly in the domain of optical telecommunications, and for example for optical amplifiers.
Abstract:
The invention relates to an optical parametric oscillator characterized in that it comprises an OPO nonlinear material (18) and two mirrors (24, 26) on either side of said nonlinear material and forming an OPO cavity and a switched microlaser (2, 6, 8, 26) for generating an OPO cavity laser pumping beam.
Abstract:
The invention relates to a microlaser cavity having an active laser medium and reflection means at the entrance and exit of the cavity, characterized in that the reflection means are dimensioned in such a way that, in the active medium, the size of a pumping beam is at the most equal to the size of a laser beam emitted by the cavity.
Abstract:
This laser telemetry device operating on the principle of the measurement of the transit time of a light pulse, is characterized in that it comprises: a passive switching microlaser (2), means (6, 10) for receiving a light pulse (18, 19) reflected by an object (4) and for the detection of the reception time of said pulse, means (8, 10) for the detection of the emission time of a pulse from the microlaser (2), means (12) for measuring the time interval or slot separating the microlaser pulse emission time and the reflected beam reception time.