Abstract:
The invention relates to a vacuum arc source (1), including ring-like magnetic field source (2) and a cathode body (3) with an vaporization material (31) as a cathode (32) for the production of an arc discharge on an vaporization surface (33) of the cathode (32). In this arrangement the cathode body (3) is bounded in an axial direction in a first axial direction by a cathode base (34) and in a second axial direction by the vaporization surface (33) and the ring-like magnetic (2) is arranged polarised parallel or anti-parallel and concentric to a surface normal (300) of the vaporization surface (33). In accordance with the invention a magnetic field enhancement ring (4) is arranged on a side remote from the vaporization surface (33) at a pre-determinable second spacing (A2) in front of the cathode base (34). The invention further relates to an arc vaporization chamber (10) with an arc vaporization source (1).
Abstract:
Disclosed herein are systems and methods for in-situ measurement of impurities on metal slugs utilized in electron-beam metal evaporation/deposition systems, and for increasing the production yield of a semiconductor manufacturing processes utilizing electron-beam metal evaporation/deposition systems. A voltage and/or a current level on an electrode disposed in a deposition chamber of an electron-beam metal evaporation/deposition system is monitored and used to measure contamination of the metal slug. Should the voltage or current reach a certain level, the deposition is completed and the system is inspected for contamination.
Abstract:
To uniformly perform processing such as deposition on a processing object such as a large, heavy substrate for optics, the large, heavy substrate for optics is accurately, reliably attached to a holder. A vacuum processing apparatus which processes a processing object in a vacuum vessel includes a susceptor which has a surface having concavity and convexity, that is opposite to its surface on which the processing object is mounted, and movably holds the processing object, a holder which has a surface having concavity and convexity which mesh with those of the susceptor, a driving mechanism which holds the holder to be movable to a first state or a second state, and a control means for moving the susceptor while the holder is held in the first state to mesh the surface, having the concavity and convexity, of the susceptor with the surface, having the concavity and convexity, of the holder and thereby connect the susceptor and the holder to each other, moving the holder, to which the susceptor is connected, to the second state and processing the processing object, and moving the holder to the first state again and moving the susceptor so that the surface, having the concavity and convexity, of the susceptor is separated from the surface, having the concavity and convexity, of the holder.
Abstract:
An optical thin-film vapor deposition apparatus and method are capable of producing an optical thin-film by vapor depositing a vapor deposition substance onto substrates (14) within a vacuum vessel (10). A dome shaped holder (12) is disposed within the vacuum vessel (10) and holds the substrates (14). A drive rotates the dome shaped holder (12). A vapor depositing source (34) is disposed oppositely to the substrates (14). An ion source (38) irradiates ions to the substrates (14). A neutralizer (40) irradiates electrons to the substrates (14). The ion source (38) is disposed at an angle between an axis, along which ions are irradiated from the ion source (38), and a line perpendicular to a surface of each of the substrates (14). The angle is between 8° inclusive and 40° inclusive. A ratio of a distance in a vertical direction between (i) a center of rotational axis of the dome shaped holder (12), and (ii) a center of the ion source (38), relative to a diameter of the dome shaped holder (12), is between 0.5 inclusive and 1.2 inclusive.
Abstract:
Disclosed herein are systems and methods for in-situ measurement of impurities on metal slugs utilized in electron-beam metal evaporation/deposition systems, and for increasing the production yield of a semiconductor manufacturing processes utilizing electron-beam metal evaporation/deposition systems. A voltage and/or a current level on an electrode disposed in a deposition chamber of an electron-beam metal evaporation/deposition system is monitored and used to measure contamination of the metal slug. Should the voltage or current reach a certain level, to the deposition is completed and the system is inspected for contamination.
Abstract:
To uniformly perform processing such as deposition on a processing object such as a large, heavy substrate for optics, the large, heavy substrate for optics is accurately, reliably attached to a holder. A vacuum processing apparatus which processes a processing object in a vacuum vessel includes a susceptor which has a surface having concavity and convexity, that is opposite to its surface on which the processing object is mounted, and movably holds the processing object, a holder which has a surface having concavity and convexity which mesh with those of the susceptor, a driving mechanism which holds the holder to be movable to a first state or a second state, and a control means for moving the susceptor while the holder is held in the first state to mesh the surface, having the concavity and convexity, of the susceptor with the surface, having the concavity and convexity, of the holder and thereby connect the susceptor and the holder to each other, moving the holder, to which the susceptor is connected, to the second state and processing the processing object, and moving the holder to the first state again and moving the susceptor so that the surface, having the concavity and convexity, of the susceptor is separated from the surface, having the concavity and convexity, of the holder.
Abstract:
The present invention relates to an evaporation system comprising a vacuum chamber, a crucible for receiving an evaporation material, a substrate holder for receiving a substrate, and an electron beam source for heating the evaporation material to be deposited on the substrate, wherein the electron beam source together with the crucible and the substrate holder are arranged inside of the vacuum chamber, the electron beam source is a field emission electron beam source, and the evaporation system further comprises a control unit for controlling the direction of electrons emitted by the field emission electron beam source such that the emitted electrons heat the evaporation material such that it evaporates.
Abstract:
The invention relates to a vacuum arc vaporisation source (1), including ring-like magnetic field source (2) and a cathode body (3) with an vaporisation material (31) as a cathode (32) for the production of an arc discharge on an vaporisation surface (33) of the cathode (32). In this arrangement the cathode body (3) is bounded in an axial direction in a first axial direction by a cathode base (34) and in a second axial direction by the vaporisation surface (33) and the ring-like magnetic (2) is arranged polarised parallel or anti-parallel and concentric to a surface normal (300) of the vaporisation surface (33). In accordance with the invention a magnetic field enhancement ring (4) is arranged on a side remote from the vaporisation surface (33) at a pre-determinable second spacing (A2) in front of the cathode base (34). The invention further relates to an arc vaporisation chamber (10) with an arc vaporisation source (1).
Abstract:
A method of characterizing an electron beam is described, comprising providing a system including an electron gun having a steering coil. A material having a surface is also provided. An electron beam from said electron gun is directed to said surface. The directing includes providing a first current to the steering coil to direct the electron beam to a first point on the surface and then providing a second current to the steering coil to direct the electron beam to a second point on the surface. An imaging system is mounted for viewing said surface. An image is collected based on light emitted from the surface because of the electron beam directed at the first point and the second point. A light intensity is determined at the first point and at the second point.
Abstract:
An electron gun includes the following: a primary thermionic electron source, a secondary thermionic electron source and a focusing electrode disposed within a first housing that includes one or more reference members adjustably attached to a housing support connected to a first platform; an anode and one or more focusing coils disposed within a second housing comprising one or more insulating members adjustably connected to the first platform; and one or more deflection coils disposed within a third housing connected to the second housing and located opposite said first housing.