摘要:
A dynamic-type memory A, a non-volatile memory B and a static-type memory C are enclosed in one package. Separated from a first terminal supplying a power-supply potential to the memories A and B, a second terminal supplying a power-supply potential to the memory C is provided. By stopping the supply of the power-supply potential to the first terminal at stand-by, stand-by current of a semiconductor memory device can be reduced. Therefore, the semiconductor memory device having an increased memory capacity while reducing a mounting area and consumption current at stand-by can be provided.
摘要:
An IC socket that can improve the efficiency of the lead replacement process and a semiconductor device having such an IC socket are provided. The IC socket is removably mounted on a circuit substrate, and includes a plurality of linear lead members, a lead module, and a socket base body. The lead module is replaceable and holds lead members of each group of a plurality of groups into which the plurality of lead members are divided. The lead module is provided in plurality to hold each of the plurality of groups. The socket base body is placed between the circuit substrate and the lead module and determines the position of the lead module on the circuit substrate.
摘要:
A seal device of the non-contact type having seal faces formed by those end faces of a rotating seal ring and a stationary ring which are perpendicular to axes of the two rings, and also having dynamic pressure generating grooves formed in one of the seal faces at a certain interval in the circumferential direction of the seal face each groove having a first spiral groove portion and a second terminal portion being formed continuous from the front end of each of the first spiral groove portions, extending along the circumferential direction of the seal face but across its corresponding first spiral groove portion, and provided with a closed front end. The seal device can be used at high speed and under high pressure and it can correct the tilting of its seal faces, which is caused by pressure and heat added, to prevent them from being contacted with each other. Even when the difference of pressures added to them changes, the seal device can keep them parallel to each other to reduce the amount of liquid leaked to a greater extent.
摘要:
An apparatus for detecting the correct timing of lot changing in a corrugator. The sum of a finished extent, which is the product of a specified cut length and the number of cut pieces excluding rejected cut pieces, and the residual quantity of a single-faced or double-faced corrugated board on the production line is subtracted from a lot size or length which is the product of the specified cut length and a specified number of cut pieces, to obtain a residual lot length, and this computation is successively performed at predetermined time intervals. The amount of raw material board fed is successively subtracted from the residual lot length, so that when the difference is reduced to zero, it is an indication of the desired lot changing timing.
摘要:
An optical thin-film vapor deposition apparatus and method are capable of producing an optical thin-film by vapor depositing a vapor deposition substance onto substrates (14) within a vacuum vessel (10). A dome shaped holder (12) is disposed within the vacuum vessel (10) and holds the substrates (14). A drive rotates the dome shaped holder (12). A vapor depositing source (34) is disposed oppositely to the substrates (14). An ion source (38) irradiates ions to the substrates (14). A neutralizer (40) irradiates electrons to the substrates (14). The ion source (38) is disposed at an angle between an axis, along which ions are irradiated from the ion source (38), and a line perpendicular to a surface of each of the substrates (14). The angle is between 8° inclusive and 40° inclusive. A ratio of a distance in a vertical direction between (i) a center of rotational axis of the dome shaped holder (12), and (ii) a center of the ion source (38), relative to a diameter of the dome shaped holder (12), is between 0.5 inclusive and 1.2 inclusive.
摘要:
A semiconductor integrated circuit which is supplied with a first power supply voltage and a second power supply voltage from outside so as to operate incorporated circuits, and outputs data at an output terminal, includes an internal circuit that carries out a predetermined function for an input signal, an output circuit which includes a first circuit for converting the signal from the internal circuit into an output signal and a second circuit containing a final stage buffer circuit which outputs, depending on the signal from the first circuit, data to the output terminal; and a switching circuit that switches a power supply voltage supplied to the second circuit, to either the first power supply voltage or the second power supply voltage. A voltage obtained by decreasing the first power supply voltage is supplied to the internal circuit. The first power supply voltage is supplied to the first circuit.
摘要:
In a power on reset (POR) circuit, when power is turned on, an output signal of an inverter attains an H level and an N channel MOS transistor is rendered conductive. The potential of an input node of the inverter becomes a potential of a power supply voltage divided by a conductive resistance value R1 of a P channel MOS transistor and a conductive resistance value R2 of an N channel MOS transistor. Assuming that the threshold voltage of the inverter is 0.8 V and R1:R2=2:3, then the power supply voltage Vres at the time when signal POR# inverts its level becomes 1.33 V. Thus, this POR circuit can reliably be utilized even in a product designed to operate with 1.5 V incorporating a MOS transistor having a threshold voltage of 0.8 V.
摘要:
In a power on reset (POR) circuit, when power is turned on, an output signal of an inverter attains an H level and an N channel MOS transistor is rendered conductive. The potential of an input node of the inverter becomes a potential of a power supply voltage divided by a conductive resistance value R1 of a P channel MOS transistor and a conductive resistance value R2 of an N channel MOS transistor. Assuming that the threshold voltage of the inverter is 0.8 V and R1:R2=2:3, then the power supply voltage Vres at the time when signal POR# inverts its level becomes 1.33 V. Thus, this POR circuit can reliably be utilized even in a product designed to operate with 1.5 V incorporating a MOS transistor having a threshold voltage of 0.8 V.
摘要:
An output buffer includes first current driving units connected in parallel between a power-supply voltage and an output node; second current driving units connected in parallel between a ground voltage and an output node; a plurality of operation selection circuits setting the respective first and second current driving units to be in either activated or inactivated state in a non-volatile manner; first signal transmission circuits arranged respectively corresponding to the first current driving circuits and each transmitting the level of output data with a similar first propagation time period; and second signal transmission circuits arranged respectively corresponding to the second current driving units and each transmitting the level of the output data with a similar second propagation time period.
摘要:
A semiconductor device includes a sense amplifier which becomes able to amplify a signal when receiving a read enable signal; a delay unit which can provide a plurality of transmission paths having different delay times and which propagates the read enable signal through a transmission path corresponding to a selection signal among the plurality of transmission paths; a selection signal generation circuit capable of generating the plurality of selection signals; and a JTAG boundary scan test circuit which brings the selection signal generation circuit into operation in accordance with a instruction.