公开(公告)号：US20190316250A1

公开(公告)日：2019-10-17

申请号：US16452998

申请日：2019-06-26

Applicant: Skyworks Solutions, Inc.

Inventor： Kezia Cheng

IPC: C23C14/50 ,  C23C16/505 ,  C23C16/50 ,  C23C16/06 ,  H01L21/311 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/687 ,  H01L21/677 ,  H01L21/30 ,  H01L21/67

Abstract: Methods to improve front-side process uniformity by back-side metallization are disclosed. In some implementations, a metal layer is deposited on the back-side of a wafer prior to performing a plasma-based process on the front side of the wafer. Presence of the back-side metal layer reduces variations in, for example, thickness of a deposited and/or etched layer resulting from the plasma-based process.

公开(公告)号：US09768081B2

公开(公告)日：2017-09-19

申请号：US14700361

申请日：2015-04-30

Applicant: SKYWORKS SOLUTIONS, INC.

Inventor： Kezia Cheng

IPC: H01L21/66 ,  H01J37/304 ,  H01J37/305 ,  G01N27/00 ,  H01L21/02 ,  C23C14/30 ,  C23C14/54

CPC classification number: H01L22/14 ,  C23C14/30 ,  C23C14/548 ,  G01N27/00 ,  H01J37/304 ,  H01J37/3053 ,  H01J2237/24475 ,  H01J2237/30472 ,  H01J2237/3132 ,  H01L21/02 ,  Y10T29/41

Abstract: An electrode system configured to be positioned within a vacuum chamber of an electron-beam metal evaporation and deposition apparatus including a metal slug from which metal is evaporated during operation of the electron-beam metal evaporation and deposition apparatus. The electrode system includes a substantially ring-shaped electrode formed of a conductive material and a plurality of insulating standoffs configured to support the substantially ring-shaped electrode in the vacuum chamber in a position substantially surrounding the metal slug.

公开(公告)号：US20170186694A1

公开(公告)日：2017-06-29

申请号：US15407144

申请日：2017-01-16

Applicant: Skyworks Solutions, Inc.

Inventor： Kezia Cheng

IPC: H01L23/532 ,  H01L21/768

CPC classification number: H01L23/53238 ,  H01L21/469 ,  H01L21/768 ,  H01L21/76816 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76852 ,  H01L21/76895 ,  H01L21/8252 ,  H01L23/485 ,  H01L23/4855 ,  H01L23/5283 ,  H01L23/532 ,  H01L23/53223 ,  H01L23/535 ,  H01L23/66 ,  H01L24/05 ,  H01L24/48 ,  H01L24/49 ,  H01L27/0605 ,  H01L29/41 ,  H01L29/452 ,  H01L29/475 ,  H01L2223/6677 ,  H01L2224/04042 ,  H01L2224/05666 ,  H01L2224/48463 ,  H01L2224/4911 ,  H01L2224/49171 ,  H01L2924/00014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13063 ,  H01L2924/181 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012

Abstract: Disclosed are devices and methods related to metallization of semiconductors. A metalized structure can include a stack disposed over a compound semiconductor, with the stack including an ohmic metal layer, a titanium/chromium layer, a metal nitride layer such as a titanium nitride layer, and a copper/aluminum layer. The titanium/chromium layer and metal nitride layer can act as a barrier between the copper/aluminum layer and a substrate.

公开(公告)号：US20150243567A1

公开(公告)日：2015-08-27

申请号：US14700361

申请日：2015-04-30

Applicant: SKYWORKS SOLUTIONS, INC.

Inventor： Kezia Cheng

IPC: H01L21/66 ,  C23C14/30 ,  C23C14/54 ,  G01N27/00

CPC classification number: H01L22/14 ,  C23C14/30 ,  C23C14/548 ,  G01N27/00 ,  H01J37/304 ,  H01J37/3053 ,  H01J2237/24475 ,  H01J2237/30472 ,  H01J2237/3132 ,  H01L21/02 ,  Y10T29/41

Abstract: An electrode system configured to be positioned within a vacuum chamber of an electron-beam metal evaporation and deposition apparatus including a metal slug from which metal is evaporated during operation of the electron-beam metal evaporation and deposition apparatus. The electrode system includes a substantially ring-shaped electrode formed of a conductive material and a plurality of insulating standoffs configured to support the substantially ring-shaped electrode in the vacuum chamber in a position substantially surrounding the metal slug.

Abstract translation: 一种被配置为位于电子束金属蒸发和沉积设备的真空室内的电极系统，该电子束金属蒸发和沉积设备包括在电子束金属蒸发和沉积设备的操作期间金属被蒸发的金属块。 电极系统包括由导电材料形成的基本上环形的电极和多个绝缘支座，其构造成在基本上围绕金属芯块的位置中支撑真空室中的基本环形电极。

公开(公告)号：US20130069622A1

公开(公告)日：2013-03-21

申请号：US13678765

申请日：2012-11-16

Applicant: SKYWORKS SOLUTIONS, INC.

Inventor： Kezia Cheng

IPC: G01N27/00 ,  H01L21/02

CPC classification number: H01L22/14 ,  C23C14/30 ,  C23C14/548 ,  G01N27/00 ,  H01J37/304 ,  H01J37/3053 ,  H01J2237/24475 ,  H01J2237/30472 ,  H01J2237/3132 ,  H01L21/02 ,  Y10T29/41

Abstract: Disclosed herein are systems and methods for in-situ measurement of impurities on metal slugs utilized in electron-beam metal evaporation/deposition systems, and for increasing the production yield of a semiconductor manufacturing processes utilizing electron-beam metal evaporation/deposition systems. A voltage and/or a current level on an electrode disposed in a deposition chamber of an electron-beam metal evaporation/deposition system is monitored and used to measure contamination of the metal slug. Should the voltage or current reach a certain level, to the deposition is completed and the system is inspected for contamination.

Abstract translation: 本文公开了用于在电子束金属蒸发/沉积系统中使用的金属块上的杂质的原位测量的系统和方法，以及利用电子束金属蒸发/沉积系统提高半导体制造工艺的生产产量。 监测设置在电子束金属蒸发/沉积系统的沉积室中的电极上的电压和/或电流水平，以用于测量金属屑的污染。 如果电压或电流达到一定水平，完成沉积并检查系统是否有污染。

公开(公告)号：US20180047650A1

公开(公告)日：2018-02-15

申请号：US15673569

申请日：2017-08-10

Applicant: SKYWORKS SOLUTIONS, INC.

Inventor： Bradley Paul Barber ,  Kezia Cheng

IPC: H01L23/31 ,  H01L23/00 ,  H01L21/56

Abstract: According to various aspects and embodiments, a support structure for packaging an electronic device is provided. In one example, a packaged electronic device includes a substrate, at least one electronic device disposed on the substrate, an encapsulation structure disposed on the substrate and having a wall that forms a perimeter around the at least one electronic device, and at least one support structure formed from a photosensitive polymer and disposed adjacent the wall of the encapsulation structure. The at least one support structure has a configuration that provides at least one of increased adhesion and mechanical strength to the encapsulation structure.

公开(公告)号：US20170365554A1

公开(公告)日：2017-12-21

申请号：US15620064

申请日：2017-06-12

Applicant: SKYWORKS SOLUTIONS, INC.

Inventor： Bradley Paul Barber ,  Kezia Cheng

IPC: H01L23/528 ,  H05K5/00 ,  H05K5/06 ,  H05K5/02 ,  H05K5/03

CPC classification number: H01L23/5283 ,  H01L2224/05551

Abstract: A system and method for packaging an electronic device are provided. The packaged electronic device may include a structure material having one portion with a first lateral cross-section, and at least one other portion with a second lateral cross-section, where at least one of a dimension and a shape of the second lateral cross-section is different than in the first lateral cross-section.

公开(公告)号：US09576906B2

公开(公告)日：2017-02-21

申请号：US15224993

申请日：2016-08-01

Applicant: Skyworks Solutions, Inc.

Inventor： Kezia Cheng

IPC: H01L29/06 ,  H01L23/532 ,  H01L21/8252 ,  H01L21/768 ,  H01L23/535 ,  H01L23/528 ,  H01L23/66 ,  H01L27/06

CPC classification number: H01L23/53238 ,  H01L21/469 ,  H01L21/768 ,  H01L21/76816 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76852 ,  H01L21/76895 ,  H01L21/8252 ,  H01L23/485 ,  H01L23/4855 ,  H01L23/5283 ,  H01L23/532 ,  H01L23/53223 ,  H01L23/535 ,  H01L23/66 ,  H01L24/05 ,  H01L24/48 ,  H01L24/49 ,  H01L27/0605 ,  H01L29/41 ,  H01L29/452 ,  H01L29/475 ,  H01L2223/6677 ,  H01L2224/04042 ,  H01L2224/05666 ,  H01L2224/48463 ,  H01L2224/4911 ,  H01L2224/49171 ,  H01L2924/00014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13063 ,  H01L2924/181 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012

Abstract: Disclosed are devices and methods related to metallization of semiconductors. A metalized structure can include a stack disposed over a compound semiconductor, with the stack including a barrier, a copper (Cu) layer disposed over the barrier, and a first titanium (Ti) layer disposed over the Cu layer. The metalized structure can further include a sputtered titanium tungsten (TiW) layer disposed over the first Ti layer. The barrier can include an assembly of titanium nitride (TiN) and Ti layers. The metalized structure can further include a second Ti layer disposed over the sputtered TiW layer.

Abstract translation: 公开了与半导体的金属化相关的器件和方法。 金属化结构可以包括设置在化合物半导体上的堆叠，堆叠包括阻挡层，设置在阻挡层上的铜（Cu）层和设置在Cu层上的第一钛（Ti）层。 金属化结构还可以包括设置在第一Ti层之上的溅射钛钨（TiW）层。 阻挡层可以包括氮化钛（TiN）和Ti层的组件。 金属化结构还可以包括设置在溅射TiW层上的第二Ti层。

公开(公告)号：US09068918B2

公开(公告)日：2015-06-30

申请号：US13678765

申请日：2012-11-16

Applicant: SKYWORKS SOLUTIONS, INC.

Inventor： Kezia Cheng

IPC: G01R27/08 ,  G01N27/00 ,  H01J37/304 ,  H01J37/305 ,  H01L21/02

CPC classification number: H01L22/14 ,  C23C14/30 ,  C23C14/548 ,  G01N27/00 ,  H01J37/304 ,  H01J37/3053 ,  H01J2237/24475 ,  H01J2237/30472 ,  H01J2237/3132 ,  H01L21/02 ,  Y10T29/41

Abstract: Disclosed herein are systems and methods for in-situ measurement of impurities on metal slugs utilized in electron-beam metal evaporation/deposition systems, and for increasing the production yield of a semiconductor manufacturing processes utilizing electron-beam metal evaporation/deposition systems. A voltage and/or a current level on an electrode disposed in a deposition chamber of an electron-beam metal evaporation/deposition system is monitored and used to measure contamination of the metal slug. Should the voltage or current reach a certain level, the deposition is completed and the system is inspected for contamination.

Abstract translation: 本文公开了用于在电子束金属蒸发/沉积系统中使用的金属块上的杂质原位测量的系统和方法，以及利用电子束金属蒸发/沉积系统提高半导体制造工艺的产量。 监测设置在电子束金属蒸发/沉积系统的沉积室中的电极上的电压和/或电流水平，以用于测量金属屑的污染。 如果电压或电流达到一定水平，则完成沉积并检查系统是否有污染。

公开(公告)号：US20240258994A1

公开(公告)日：2024-08-01

申请号：US18427321

申请日：2024-01-30

Applicant: Skyworks Solutions, Inc.

Inventor： Kurt George Steiner ,  Alan Sangone Chen ,  Yosuke Hamaoka ,  Benjamin Paul Abbott ,  Michael David Hill ,  Kezia Cheng

IPC: H03H9/25 ,  H03H9/02 ,  H03H9/64

CPC classification number: H03H9/25 ,  H03H9/02574 ,  H03H9/02834 ,  H03H9/6483

Abstract: An acoustic wave device is disclosed. The acoustic wave device can include a piezoelectric layer, and an interdigital transducer electrode formed with the piezoelectric layer. The interdigital transducer electrode includes a first layer, a second layer over the first layer, and a seed layer between the first layer and the piezoelectric layer. A combination of the first layer and the seed layer has a resistivity that is lower than a resistivity of the first layer alone.