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公开(公告)号：US10415149B2
公开(公告)日：2019-09-17
申请号：US15920001
申请日：2018-03-13
申请人： Silfex, Inc.
发明人： George David Stephen Hudelson , Igor Peidous , Haresh Siriwardane , Steven M. Joslin , Jihong Chen
摘要： A system comprises a silicon seed arranged on a pedestal, where the silicon seed is ring shaped and is configured to receive melted silicon at a feed rate to form an ingot, and where the pedestal is configured to rotate at a rotational speed. A controller is configured to, while the silicon seed receives the melted silicon and while the ingot is forming: receive feedback regarding a diameter of the ingot and regarding an angle of a meniscus of the ingot, and control the rotational speed of the pedestal and the feed rate of the melted silicon based on the feedback to control the diameter of the ingot and the angle of the meniscus of the ingot.
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公开(公告)号：US20180282898A1
公开(公告)日：2018-10-04
申请号：US15920001
申请日：2018-03-13
申请人： Silfex, Inc.
发明人： George David Stephen Hudelson , Igor Peidous , Haresh Siriwardane , Steven M. Joslin , Jihong Chen
CPC分类号： C30B11/10 , C30B11/001 , C30B11/002 , C30B11/006 , C30B29/06 , C30B29/64
摘要： A system comprises a silicon seed arranged on a pedestal, where the silicon seed is ring shaped and is configured to receive melted silicon at a feed rate to form an ingot, and where the pedestal is configured to rotate at a rotational speed. A controller is configured to, while the silicon seed receives the melted silicon and while the ingot is forming: receive feedback regarding a diameter of the ingot and regarding an angle of a meniscus of the ingot, and control the rotational speed of the pedestal and the feed rate of the melted silicon based on the feedback to control the diameter of the ingot and the angle of the meniscus of the ingot
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公开(公告)号：US20160230307A1
公开(公告)日：2016-08-11
申请号：US14614861
申请日：2015-02-05
CPC分类号： C30B11/10 , C30B11/006 , C30B29/06
摘要： Apparatus and method for a production of silicon ingots, such as crucible-less production of silicon ingots, where a support with a seed layer and a liquid layer is gradually lowered in a temperature field with a vertical gradient to solidify the liquid layer in a controlled way.
摘要翻译： 用于制造硅锭的装置和方法，例如无晶硅锭的生产，其中具有种子层和液体层的支撑在垂直梯度的温度场中逐渐降低，以将受控的液体层固化 办法。
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65.发明授权公开(公告)号：US07204942B2
公开(公告)日：2007-04-17
申请号：US10723372
申请日：2003-11-25
CPC分类号： G03F7/70058 , C30B11/00 , C30B29/12 , G02B1/02 , G03F7/70216 , G03F7/70958 , G03F7/70966
摘要： The method of making a high quality fluoride crystalline optical microlithography lens element blank includes crystallizing a fluoride crystalline member with dimension ≧200 mm from a melt, annealing the fluoride crystalline member and qualifying the resulting member for use as an optical microlithography lens element blank The fluoride crystalline optical lithography lens element blanks have multiple adjoining abutting crystalline subgrains with low boundary angles. The crystalline members made by the method are qualified for use as lens element blanks by a testing method including measuring their absorption spectra at 200 to 220 nm to determine absorbance at 205 nm and/or by making measurements of radiation diffracted by them.
摘要翻译： 制造高质量氟化物结晶光学微光学透镜元件坯料的方法包括从熔体中将尺寸> = 200mm的氟化物结晶构件结晶，对氟化物结晶部件进行退火并限定所得部件用作光学微光刻透镜元件坯料 氟化物结晶光刻透镜元件坯料具有多个邻接的具有低边界角的结晶亚晶粒。 通过该方法制成的结晶成分通过测试方法被认定为透镜元件坯料，包括测量它们在200nm至220nm处的吸收光谱，以测定205nm处的吸光度和/或通过对它们衍射的辐射进行测量。
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公开(公告)号：US20060219161A1
公开(公告)日：2006-10-05
申请号：US10567943
申请日：2004-08-11
CPC分类号： B01F3/02 , B01F5/0618 , B01F5/0646 , B01F5/0647 , B01F5/065 , B01F5/0655 , B01F2005/0625 , B01F2005/0636 , B01F2005/0637 , B01J19/0053 , B01J19/2415 , B01J19/2425 , B01J19/244 , B01J2219/00015 , C01B33/02 , C01B33/03 , Y10T117/10 , Y10T117/1028
摘要： There is provided a reaction vessel whereby silicon produced can be smoothly recovered dropwise without excessive thermal load on constitutional parts of the reaction vessel, a silicon deposition feedstock gas can be reacted efficiently even when the reaction vessel is scaled up to industrial large-scale equipment, generation of silicon fine powder and silane oligomers can be suppressed, and industrial silicon production can be performed over extended periods. The tubular reaction vessel comprises a longitudinally-extending wall with a space thereinside, wherein a silicon deposition feedstock gas inflow opening and a deposited silicon discharge opening are provided at an upper portion and a lower end portion respectively, and a flow resistance-increasing region is created on a wall surface of the tubular reaction vessel that is contacted with a feedstock gas. The flow resistance-increasing region is at least one of protrudent, concave and sloped regions.
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公开(公告)号：US4167436A
公开(公告)日：1979-09-11
申请号：US822277
申请日：1977-08-05
摘要： A liquid phase, which comprises either at least one of the constituents of the compound or alloy of which the crystal is to be prepared, or a foreign material, is fed continuously at its surface with the other constituent or constituents of this compound or alloy (or with all the constituents when the liquid phase comprises a foreign material). This liquid phase is subjected to two successive temperature gradients the first of which is slight and the second steep, so that the constituents are transported through the liquid phase and so that the crystallization of the compound or alloy takes place at the level of the second gradient. The liquid phase and the temperature gradients are displaced with respect to each other at a speed determined such that the composition of the liquid phase does not change and such that the crystallization always takes place at the same temperature.
摘要翻译： 包含要制备晶体的化合物或合金的成分中的至少一种或异物的液相在其表面上与该化合物或合金的其它成分或成分连续供给（ 或当液相包含异物时与所有组分一起使用）。 该液相经受两个连续的温度梯度，其中第一个是轻微的，第二个陡峭的，使得组分被输送通过液相，使得化合物或合金的结晶发生在第二梯度的水平 。 液相和温度梯度以确定为使得液相的组成不改变并且使得结晶总是在相同温度下发生的速度相对于彼此移位。
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68.发明授权Method of manufacturing flat tapes of crystalline silicon from a silicon melt by drawing a seed crystal of silicon from the melt flowing down the faces of a knife shaped heated element 失效通过从沿着刀形加热元件的表面流下的熔体中拉出硅晶种来制造来自硅熔体的晶体硅的扁平带的方法
公开(公告)号：US4125425A
公开(公告)日：1978-11-14
申请号：US772349
申请日：1977-02-28
CPC分类号： C30B15/08 , C30B11/10 , Y10S117/90 , Y10S117/902 , Y10S117/91
摘要： A method of manufacturing bodies from meltable crystalline material in which a continuous tape of said material is manufactured by causing melted material to flow along at least one surface of a heated element, which surface is wetted by the melted material, and causing the tape to grow by drawing away a second near the lower side of the surface. Application in particular to the manufacture of semiconductor bodies, for example of silicon.
摘要翻译： 一种从可熔融结晶材料制造本体的方法，其中所述材料的连续带通过使熔融的材料沿加热元件的至少一个表面流动而制造，所述加热元件的表面被熔化的材料润湿，并且使带生长 通过在表面的下侧附近抽出一秒钟。 特别适用于半导体器件的制造，例如硅。
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公开(公告)号：US3607111A
公开(公告)日：1971-09-21
申请号：US3607111D
申请日：1969-03-18
CPC分类号： C30B11/10 , Y10T117/1028
摘要： A powder-dispensing assembly for use in combination with a fusion-type crystal-growing furnace in which a carrier gas is used for entraining the powder feed constituents for transportation to the crystal-growing zone thereof. The assembly includes a funnel-shaped powder container positioned an outer container and a means selectively movable for feeding the carrier gas to either the powder container to affect powder fall or to the crystal-growing furnace while simultaneously sealing the powder container to prevent powder fall.
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公开(公告)号：US3558284A
公开(公告)日：1971-01-26
申请号：US3558284D
申请日：1967-05-05
发明人： WALLIS ELBRIDGE B
IPC分类号： C30B11/10
CPC分类号： C30B11/10 , Y10T117/1028
摘要： A CRYSTAL GROWING APPARATUS COMPRISING A REFRACTORY FURNACE IN WHICH ONE END OF A REFRACTORY ROD IS HELD AND WITHIN WHICH THERE IS A NOZZLE BY MEANS OF WHICH MOLTEN CRYST AL FORMING MATERIAL IS DEPOSITED ON THE ROD. THE CRYSTAL FORMING MATERIAL IS IN THE FORM OF POWER AND IS LIQUEFIED IN AN OXYGEN-HYDROGEN FLAME AT THE END OF THE NOZZLE. AS THE CRYSTAL GROWS AT THE END OF THE ROD THE LATTER RETRACTED.
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