公开(公告)号：US20030129536A1

公开(公告)日：2003-07-10

申请号：US10345561

申请日：2003-01-16

申请人： International Business Machines Corporation

发明人： Elizabeth Foster ,  Gary A. Johansson ,  Heike Marcello ,  David J. Russell

IPC分类号： G03F007/038 ,  G03F007/26 ,  G03F007/40

CPC分类号： G03F7/0385 ,  G03F7/038 ,  H05K3/0023 ,  H05K3/4644 ,  H05K3/4676 ,  Y10T428/24851

摘要： A method for fabricating circuitized substrates which reduces the formation of shorts, and which does not require a bake step to drive off solvent before photoimaging, is provided. The method employs an essentially solventless photoimageable dielectric film, having a solvent content typically less than about 5%, preferably less than about 2% and a glass transition temperature, when cured, which is greater than about 110null C. The method for fabricating circuitized structures comprises the following steps: providing a photoimagable dielectric film, which film comprises: from about 95% to about 100% solids, comprising: from 0% to about 30% by weight of the solids, of a particulate rheology modifier; from about 70% to about 100% by weight of the solids of an epoxy resin system comprising: from about 85% to about 99.9% epoxy resins; and from about 0.1 to 15 parts by weight of the total resin weight, a cationic photo-initiator; from 0 to about 0.5% solvent; applying the photo-imagable dielectric film to a circuitized substrate; then exposing the photoimagable dielectric film to actinic radiation. The epoxy resin system comprises: from about 5% to about 80% of phenoxy polyol resin which is the condensation product of epichlorohydrin and bisphenol A, having a molecular weight of from about 40,000 to about 130,000; from about 0% to about 90% of an epoxidized multifunctional bisphenol A formaldehyde novolac resin having a molecular weight of from about 4,000 to about 10,000; from 20% to 80% of a diglycidyl ether of bisphenol A having a molecular weight of from about 600 to 2,500; from about 10% to about 35% liquid epoxy resin, having a molecular weight of from about 200 to about 600 preferably from about 250 to about 450. The nullliquid epoxy resinsnull are liquid at 20null C. The invention also relates to photoimagable dielectric films employed herein.

摘要翻译： 提供一种制造电路化基板的方法，其减少短路的形成，并且不需要烘烤步骤以在光成像之前驱除溶剂。 该方法采用基本上无溶剂的可光成像的电介质膜，其固化时的溶剂含量通常小于约5％，优选小于约2％，玻璃化转变温度大于约110℃。制造电路化方法 结构包括以下步骤：提供可光成像的介电膜，该膜包括：约95％至约100％的固体，包含：固体重量的0％至约30％的颗粒状流变改性剂; 约70重量％至约100重量％的环氧树脂体系固体，其包含：约85重量％至约99.9重量％的环氧树脂; 和约0.1至15重量份的总树脂重量，阳离子光引发剂; 0至约0.5％溶剂; 将光可成像电介质膜施加到电路化基板上; 然后将光可光电介质膜暴露于光化辐射。 环氧树脂体系包括：约5％至约80％的苯氧基多元醇树脂，其是表氯醇和双酚A的缩合产物，其分子量为约40,000至约130,000; 约0％至约90％的分子量为约4,000至约10,000的环氧化多官能双酚A甲醛酚醛清漆树脂; 20％至80％的分子量为约600至2,500的双酚A的二缩水甘油醚; 约10％至约35％的液体环氧树脂，其分子量为约200至约600，优选约250至约450.“液体环氧树脂”在20℃下为液体。本发明还涉及可光成像 介质膜。

公开(公告)号：US20030104306A1

公开(公告)日：2003-06-05

申请号：US10299719

申请日：2002-11-20

发明人： Satoshi Hoshi

IPC分类号： G03F007/26

CPC分类号： G03F7/3092 ,  B41C1/1008 ,  B41C1/1016 ,  B41C2201/02 ,  B41C2201/14 ,  B41C2210/04 ,  B41C2210/08 ,  B41C2210/20 ,  B41C2210/22 ,  B41C2210/24 ,  B41N3/08 ,  G03F7/32

摘要： On-press developing method of a lithographic printing plate precursor, the lithographic printing plate precursor comprising an image-forming layer which comprises a hydrophobizing precursor, and the method comprising fountain solution-clarifying means which comprises: aggregating a hydrophobizing precursor mingled in a fountain solution and removing the aggregated hydrophobizing precursor by filtration; or adding a coagulant to a fountain solution and filtering the fountain solution.

摘要翻译： 平版印刷版原版的印刷机显影方法，包括含有疏水化前体的图像形成层的平版印刷版前体，以及包含润版液澄清装置的方法，其包括：将混合在润版液中的疏水化前体聚集 并通过过滤除去聚集的疏水化前体; 或将絮凝剂加入到润版液中并过滤润版液。

公开(公告)号：US20030054294A1

公开(公告)日：2003-03-20

申请号：US10277437

申请日：2002-10-21

发明人： Richard Holscher ,  Zhiping Yin ,  Tom Glass

IPC分类号： G03F007/26

CPC分类号： H01L21/0276 ,  G03F7/091 ,  H01L21/3086 ,  Y10S430/151

摘要： In one aspect, the invention includes a semiconductor processing method. An antireflective material layer is formed over a substrate. At least a portion of the antireflective material layer is annealed at a temperature of greater than about 400null C. A layer of photoresist is formed over the annealed antireflective material layer. The layer of photoresist is patterned. A portion of the antireflective material layer unmasked by the patterned layer of photoresist is removed. In another aspect, the invention includes the following semiconductor processing. An antireflective material layer is formed over a substrate. The antireflective material layer is annealed at a temperature of greater than about 400null C. A layer of photoresist is formed over the annealed antireflective material layer. Portions of the layer of photoresist are exposed to radiation waves. Some of the radiation waves are absorbed by the antireflective material during the exposing.

摘要翻译： 一方面，本发明包括半导体处理方法。 在基板上形成防反射材料层。 抗反射材料层的至少一部分在大于约400℃的温度下退火。在退火的抗反射材料层上形成一层光致抗蚀剂。 图案化光刻胶层。 除去由图案化的光致抗蚀剂层掩蔽的抗反射材料层的一部分。 另一方面，本发明包括以下半导体处理。 在基板上形成防反射材料层。 抗反射材料层在大于约400℃的温度下退火。在退火的抗反射材料层上形成一层光致抗蚀剂。 光致抗蚀剂层的一部分暴露于辐射波。 一些辐射波在曝光期间被抗反射材料吸收。

公开(公告)号：US20020168584A1

公开(公告)日：2002-11-14

申请号：US10099981

申请日：2002-03-19

申请人： FUJI PHOTO FILM CO., LTD.

发明人： Toshiaki Aoai ,  Kazuyoshi Mizutani ,  Shinichi Kanna

IPC分类号： G03F007/038 ,  G03F007/26

CPC分类号： G03F7/0392 ,  G03F7/0046 ,  G03F7/0397 ,  Y10S430/108 ,  Y10S430/111 ,  Y10S430/122

摘要： A positive resist composition comprises: (A) a resin capable of decomposing by the action of an acid to increase the solubility in an alkali developer; and (B) a compound capable of generating an acid upon irradiation with one of an actinic ray and a radiation, wherein the resin (A) contains a specified repeating unit.

摘要翻译： 正型抗蚀剂组合物包含：（A）能够通过酸的作用分解以提高在碱性显影剂中的溶解度的树脂; 和（B）能够在用光化学射线和辐射之一照射时产生酸的化合物，其中树脂（A）含有指​​定的重复单元。

公开(公告)号：US20020076650A1

公开(公告)日：2002-06-20

申请号：US09176867

申请日：1998-10-22

发明人： JAMES G. SHELNUT

IPC分类号： G03F007/028 ,  G03F007/032 ,  G03F007/033 ,  G03F007/031 ,  G03F007/40 ,  G03F007/38 ,  G03F007/26

CPC分类号： G03F7/038 ,  G03F7/0045 ,  H05K3/4661 ,  H05K3/4676 ,  Y10S430/106 ,  Y10S430/121

摘要： Negative photoimageable compositions are disclosed which contain a radiation sensitive component for producing an acid when subjected to radiation at wavelengths of 320 to 420 nanometers, a resin binder and a reactive oligomer. The compositions are useful in constructing printed circuits and integrated circuit packages.

摘要翻译： 公开了负光学成像组合物，其含有当经受320至420纳米波长的辐射时产生酸的辐射敏感组分，树脂粘合剂和反应性低聚物。 该组合物可用于构建印刷电路和集成电路封装。

公开(公告)号：US20020058204A1

公开(公告)日：2002-05-16

申请号：US10026184

申请日：2001-12-21

申请人： International Business Machines Corporation

发明人： Mahmoud M. Khojasteh ,  Timothy M. Hughes ,  Ranee W. Kwong ,  Pushkara Rao Varanasi ,  William R. Brunsvold ,  Margaret C. Lawson ,  Robert D. Allen ,  David R. Medeiros ,  Ratnam Sooriyakumaran ,  Phillip Brock

IPC分类号： G03F007/004 ,  G03F007/26

CPC分类号： G03F7/094 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0395 ,  G03F7/0758 ,  G11B5/3163

摘要： Compositions suitable for forming planarizing underlayers for multilayer lithographic processes are characterized by the presence of (A) a polymer containing: (i) cyclic ether moieties, (ii) saturated polycyclic moieties, and (iii) aromatic moieties for compositions not requiring a separate crosslinker, or (B) a polymer containing: (i) saturated polycyclic moieties, and (ii) aromatic moieties for compositions requiring a separate crosslinker. The compositions provide outstanding optical, mechanical and etch selectivity properties. The compositions are especially useful in lithographic processes using radiation less than 200 nm in wavelength to configure underlying material layers.

摘要翻译： 适用于形成用于多层平版印刷工艺的平坦化底层的组合物的特征在于（A）含有（i）环醚部分，（ii）饱和多环部分和（iii）不需要单独交联剂的组合物的芳族部分的聚合物 ，或（B）含有：（i）饱和多环部分的聚合物，和（ii）需要单独交联剂的组合物的芳族部分。 该组合物提供优异的光学，机械和蚀刻选择性。 组合物在使用波长小于200nm的辐射的光刻工艺中特别有用，以配置下层材料层。

公开(公告)号：US20020058199A1

公开(公告)日：2002-05-16

申请号：US09948903

申请日：2001-09-08

申请人： Shipley Company, L.L.C.

发明人： Anthony Zampini ,  Charles R. Szmanda ,  Sungseo Cho ,  Gary N. Taylor

IPC分类号： G03F007/038 ,  G03F007/039 ,  G03F007/09 ,  G03F007/26

CPC分类号： G03F7/0382 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0395 ,  G03F7/0397

摘要： The present invention includes polymers and photoresist compositions that comprise the polymers as a resin binder component. Photoresists of the invention include chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-200 nm, particularly 157 nm. Particular polymers and photoresists of the invention include at least one electronegative group that reduces 157 nm absorbance of a wide spectrum of organic groups including aromatic groups such as phenolic moieties.

摘要翻译： 本发明包括聚合物和光致抗蚀剂组合物，其包含作为树脂粘合剂组分的聚合物。 本发明的光致抗蚀剂包括可以在短波长例如亚200nm，特别是157nm下有效成像的化学放大的正性作用抗蚀剂。 本发明的特定的聚合物和光致抗蚀剂包括至少一个电负性基团，其减少宽范围的有机基团（包括芳香族基团如酚部分）的吸光度的157nm。

公开(公告)号：US20020055066A1

公开(公告)日：2002-05-09

申请号：US09934520

申请日：2001-08-23

发明人： Shuichi Takamiya

IPC分类号： G03F007/26 ,  G03F007/30 ,  G03F007/42

CPC分类号： G03F7/322 ,  B41N3/06

摘要： An alkaline liquid developer suitable for development of an infrared radiation-presensitized plate for use in making a lithographic printing plate, which developer comprises at least one selected from the group consisting of amphoteric surfactants and cationic surfactants; a method for preparing a lithographic printing plate comprising the steps of imagewise light-exposing to infrared radiation, a presensitized plate for use in making a lithographic printing plate, said presensitized plate having an image-forming layer which comprises an IR-absorbing agent, and developing the light-exposed plate with an alkaline liquid developer comprising at least one selected from the group consisting of amphoteric surfactants and cationic surfactants. The alkaline liquid develper can provide a highly sharp and clear image in a lithographic printing plate without damages to the image areas, simultaneously exhibiting highly development performance to the non-image areas. The alkaline liquid developer of the present invention further inhibits occurrence of insoluble matter originated from a binder resin and/or an IR-absorbing agent, as well as adherence of the insoluble matter to the surface of a plate during processing, while retaining liquid conditions suitable for an alkaline liquid developer, and being capable of providing a stable processing procedure in an extended period.

摘要翻译： 一种适于开发用于制备平版印刷版的红外线辐射敏化板的碱性液体显影剂，该显影剂包含选自两性表面活性剂和阳离子表面活性剂中的至少一种; 一种制备平版印刷版的方法，包括以下步骤：成像曝光到红外辐射，用于制备平版印刷版的预敏化板，所述预敏化板具有包含IR吸收剂的图像形成层，以及 用包含选自两性表面活性剂和阳离子表面活性剂中的至少一种的碱性液体显影剂显影光曝光板。 碱性液体洗脱器可以在平版印刷版中提供高度清晰和清晰的图像，而不损害图像区域，同时对非图像区域表现出高度的显影性能。 本发明的碱性液体显影剂进一步抑制由粘合剂树脂和/或IR吸收剂产生的不溶物质的发生，以及在加工过程中不溶物质粘附到板的表面，同时保持适合的液体条件 用于碱性液体显影剂，并能够在长时间内提供稳定的处理程序。

公开(公告)号：US20020055061A1

公开(公告)日：2002-05-09

申请号：US09948525

申请日：2001-09-08

申请人： Shipley Company, L.L.C.

发明人： Gary N. Taylor ,  Robert L. Brainard ,  Shintaro Yamada

IPC分类号： G03F007/004 ,  G03F007/26

CPC分类号： G03F7/0392 ,  G03F7/0046

摘要： This invention relates to resins and photoresist compositions that comprise such resins. This invention includes new resins that comprise photoacid-labile deblocking groups, wherein the acid-labile moiety is substituted with one or more electron-withdrawing groups. Polymers of the invention are particularly useful as a resin binder component of chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-300 nm and sub-200 nm and preferably about 157 nm. In such short-wavelength imaging applications resins of the invention exhibit decreased absorbance of short wavelength exposure radiation, such as sub-170 nm radiation e.g. 157 nm.

摘要翻译： 本发明涉及包含这种树脂的树脂和光致抗蚀剂组合物。 本发明包括包含光酸不稳定解封闭基团的新树脂，其中酸不稳定部分被一个或多个吸电子基团取代。 本发明的聚合物特别可用作化学放大的正性作用抗蚀剂的树脂粘合剂组分，其可以在短波长例如亚300nm和亚-200nm，优选约157nm下有效成像。 在这种短波长成像应用中，本发明的树脂表现出短波长曝光辐射的吸光度降低，例如亚170nm辐射。 157nm。

公开(公告)号：US20020051940A1

公开(公告)日：2002-05-02

申请号：US09973630

申请日：2001-10-09

发明人： Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

IPC分类号： G03F007/038 ,  G03F007/20 ,  G03F007/38 ,  G03F007/40 ,  G03F007/26

CPC分类号： G03F7/0046 ,  C07C69/65 ,  C07C69/653 ,  C08F20/30 ,  G03F7/039 ,  G03F7/0392 ,  Y02P20/55 ,  Y10S430/108

摘要： Photoresist monomers of following Formula 1, photoresist polymers thereof, and photoresist compositions using the same. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. In addition, the photoresist composition has low light absorbance at the wavelength of 193 nm, 157 nm and 13 nm, and thus is suitable for a photolithography process using ultraviolet light sources such as VUV (157 nm) and EUV (13 nm) in fabricating a minute circuit for a high integration semiconductor device. 1 wherein, R1, R2, R3, Y, W, m and n are as defined in the specification.

摘要翻译： 下列通式1的光致抗蚀剂单体，其光致抗蚀剂聚合物和使用其的光致抗蚀剂组合物。 光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和粘合性，并且可在四甲基氢氧化铵（TMAH）水溶液中显影。 此外，光致抗蚀剂组合物在193nm，157nm和13nm波长处具有低吸光度，因此适用于在制造中使用诸如VUV（157nm）和EUV（13nm）的紫外光源的光刻工艺 用于高集成半导体器件的分钟电路。 其中，R1，R2，R3，Y，W，m和n如说明书中所定义。