公开(公告)号：US4999537A

公开(公告)日：1991-03-12

申请号：US374781

申请日：1989-07-03

Applicant: Claude Weisbuch ,  Bernard Epsztein

Inventor： Claude Weisbuch ,  Bernard Epsztein

IPC: H01J1/308 ,  H01J1/312 ,  H01J23/04

CPC classification number: B82Y10/00 ,  H01J1/308 ,  H01J1/312 ,  H01J23/04

Abstract: The electron source disclosed comprises a solid having a first semiconductor layer capable of releasing electrons under the effect of an electrical field, means to make at least one of its faces partially transparent to at least one part of the released electrons, and to enable this part of the electrons to be ejected from the solid, and a second unstable composite semiconductor layer having a structure having a negative differential resistance located between the first layer and its face which is at least partially transparent, in contact with the first layer. The electron source further includes means to form, with said first layer and the composite layer, an electrical resonant cavity.

Abstract translation: 所公开的电子源包括具有能够在电场作用下释放电子的第一半导体层的固体，使得其至少一个面部至少部分地透射到释放的电子的至少一部分，并且使得该部分 以及第二不稳定复合半导体层，其具有位于第一层和其表面之间的至少部分透明的与第一层接触的具有负的差分电阻的结构。 电子源还包括与所述第一层和复合层一起形成电谐振腔的装置。

公开(公告)号：US3706920A

公开(公告)日：1972-12-19

申请号：US3706920D

申请日：1971-03-18

Applicant: US ARMY

Inventor： CALDWELL LARRY V ,  MILLER BRIAN S

IPC: H01J1/312 ,  H01J1/34 ,  H01L3/00 ,  H01L5/00

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J1/34 ,  H01J2201/3425

Abstract: A high efficiency tunnel electron emitter in which a unique emitting layer is applied to the insulator layer of a metalinsulator-emitting layer structure. The emitting layer consists of a low work function material such as cesium that is deposited directly on the insulator layer, a thin layer of a conductive metal that is deposited onto the cesium, and an exposed surface of the conductive metal having a layer of cesium oxide applied thereto to lower the work function. The amount of cesium deposited on the insulator layer is critical and is monitored for the proper amount during deposit.

Abstract translation: 一种高效隧道电子发射器，其中独特的发光层被施加到金属 - 绝缘体发射层结构的绝缘体层。 发光层由直接沉积在绝缘体层上的诸如铯的低功函数材料，沉积在铯上的导电金属薄层以及具有氧化铯层的导电金属的暴露表面组成 施加到其上以降低功函数。 沉积在绝缘体层上的铯的量是关键的，并且在沉积期间被监测适当的量。

公开(公告)号：US2950994A

公开(公告)日：1960-08-30

申请号：US79551459

申请日：1959-02-25

Applicant: TUNG SOL ELECTRIC INC

Inventor： FIRTH BERNARD G

IPC: H01J1/312 ,  H01J9/02

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J9/022 ,  Y10T428/264

公开(公告)号：US12272512B2

公开(公告)日：2025-04-08

申请号：US18316194

申请日：2023-05-11

Applicant: KETEK GmbH Halbleiter-und Reinraumtechnik

Inventor： Michael Bachmann ,  Andreas Schels ,  Florian Herdl ,  Stefan Zimmermann ,  Simon Edler ,  Erik Bunert

IPC: H01J1/312 ,  C23C16/26 ,  C23C16/34 ,  H01L21/02

Abstract: In an embodiment an ionization detector includes a gate-insulator-substrate electron-emission structure (GIS-EE) configured to emit low-energy electrons, a sample chamber configured for at least one gas to be detected, the sample chamber being adjacent to the GIS-EE and a measuring unit configured to detect and/or select charged particles, wherein the charged particles are due to the emitted electrons and/or comprise the emitted electrons.

公开(公告)号：US11551902B2

公开(公告)日：2023-01-10

申请号：US17367523

申请日：2021-07-05

Applicant: SHARP KABUSHIKI KAISHA

Inventor： Kohji Shinkawa ,  Tadashi Iwamatsu ,  Tomohiro Kosaka ,  Kazuya Tsujino ,  Reshan Maduka Abeysinghe

IPC: H01J1/312 ,  H01J29/96

Abstract: This electron emitting element includes a lower electrode, a surface electrode facing the lower electrode, a resistance layer arranged between the lower electrode and the surface electrode, and an insulating layer arranged between the lower electrode and the surface electrode. The resistance layer is an insulating resin layer containing conductive fine particles in a dispersed state. The insulating layer has a peripheral region for defining the electron emission region, and an emission control region which is arranged so as to overlap the electron emission region defined by the peripheral region. The emission control region is configured by a line-shaped insulating layer, a plurality of dot-shaped insulating layers, or both a line-shaped insulating layer and a plurality of dot-shaped insulating layers. The percentage of an area that the emission control region represents within an area of an electron emission region defined by the peripheral region is 2% or more and 60% or less.

公开(公告)号：US10727021B2

公开(公告)日：2020-07-28

申请号：US16316026

申请日：2017-07-14

Applicant: SHARP KABUSHIKI KAISHA

Inventor： Katsumi Adachi ,  Hiroyuki Hirakawa ,  Tadashi Iwamatsu

IPC: H01J1/312 ,  H01J1/304 ,  H01J1/146 ,  H01J1/144 ,  H01J9/02 ,  H01J29/04

Abstract: An electron emission element (20) includes a first electrode (30a) and a second electrode (40) which are arranged facing each other, an intermediate layer (50) that is provided between the first electrode (30a) and the second electrode (40), and an insulating layer (60) that is formed with a thickness d1 on a substrate (30). A level difference between the insulating layer (60) and the first electrode (30a) is smaller than the thickness d1 of the insulating layer (60).

公开(公告)号：US06975075B2

公开(公告)日：2005-12-13

申请号：US11004868

申请日：2004-12-07

Applicant: Masakazu Sagawa ,  Mutsumi Suzuki ,  Toshiaki Kusunoki

Inventor： Masakazu Sagawa ,  Mutsumi Suzuki ,  Toshiaki Kusunoki

IPC: H01J1/30 ,  G09G3/10 ,  G09G3/22 ,  G11C11/24 ,  H01J1/312 ,  H01J9/02

CPC classification number: B82Y10/00 ,  G09G3/22 ,  H01J1/312 ,  H01J9/022 ,  H01J9/241 ,  H01J2201/3125

Abstract: A display having hot electron type electron sources displaying an image by a line sequential scanning scheme is provided to prevent poor brightness uniformity along scan lines. The hot electron type electron source is provided with a top electrode bus line serving as a scan line and a bottom electrode bus line serving as a data line. The top electrode bus line has a sheet resistance lower than that of the bottom electrode. The wire sheet resistance of the scam line can be reduced to several m/square. When forming a 40 inch large screen FED using the hot electron type electron sources, a voltage drop amount produced in the scan line can be suppressed below an allowable range. As a result, high quality image without poor brightness uniformity can be obtained.

公开(公告)号：US06947060B2

公开(公告)日：2005-09-20

申请号：US09248980

申请日：1999-02-12

Applicant: Naoto Abe

Inventor： Naoto Abe

IPC: G09G3/20 ,  G09G3/22 ,  G09G5/00 ,  H01J1/304 ,  H01J1/312 ,  H01J1/316 ,  G09G5/10 ,  G09G3/36 ,  H04N5/202

CPC classification number: G09G3/2092 ,  G09G3/2014 ,  G09G3/22 ,  G09G5/008

Abstract: An image forming apparatus which performs pulsewidth modulation with a pulsewidth set by counting a clock. Especially, for grayscale level correction by setting the frequency of the clock, the periodic clock is counted, and an output pattern is changed in accordance with a count value of the clock. Otherwise, information corresponding to a clock pattern is stored in advance, and the information is sequentially read and used as a clock. Otherwise, a clock source in which the frequency is controlled by a control signal is used.

Abstract translation: 一种图像形成装置，其通过对时钟进行计数而设定脉冲宽度调制。 特别地，通过设定时钟频率进行灰度级校正，对周期时钟进行计数，并根据时钟的计数值改变输出模式。 否则，预先存储对应于时钟模式的信息，并且依次读取和使用该信息作为时钟。 否则，使用频率由控制信号控制的时钟源。

公开(公告)号：US06933517B2

公开(公告)日：2005-08-23

申请号：US10686965

申请日：2003-10-15

Applicant: Zhizhang Chen ,  Paul J. Benning ,  Sriram Ramamoorthi ,  Thomas Novet

Inventor： Zhizhang Chen ,  Paul J. Benning ,  Sriram Ramamoorthi ,  Thomas Novet

IPC: H01J29/04 ,  G11C11/23 ,  H01J1/312 ,  H01J9/02 ,  H01J31/12 ,  H01L29/06

CPC classification number: B82Y10/00 ,  G11C11/23 ,  H01J1/312 ,  H01J9/025

Abstract: An emitter includes an electron supply and a tunneling layer disposed on the electron supply. A cathode layer is disposed on the tunneling layer. A conductive electrode has multiple layers of conductive material. The multiple layers include a protective layer disposed on the cathode layer. The conductive electrode has been etched to define an opening thereby exposing a portion of the cathode layer.

Abstract translation: 发射极包括电子源和设置在电子源上的隧穿层。 阴极层设置在隧道层上。 导电电极具有多层导电材料。 多层包括设置在阴极层上的保护层。 已经蚀刻导电电极以限定开口，从而暴露阴极层的一部分。

公开(公告)号：US06911768B2

公开(公告)日：2005-06-28

申请号：US10263055

申请日：2002-10-01

Applicant: Zhizhang Chen ,  Sriram Ramamoorthi ,  Hung Liao ,  Paul Benning ,  Alexander Govyadinov

Inventor： Zhizhang Chen ,  Sriram Ramamoorthi ,  Hung Liao ,  Paul Benning ,  Alexander Govyadinov

IPC: H01J1/312 ,  H01J9/02 ,  H01J19/24 ,  H01J21/06 ,  H01J29/04 ,  H01J31/12 ,  H01L29/06

CPC classification number: H01J1/312 ,  B82Y10/00 ,  H01J9/022 ,  H01J2201/3125

Abstract: An emitter has an electron supply and a porous cathode layer having nanohole openings. The emitter also has a tunneling layer disposed between the electron supply and the cathode layer.

Abstract translation: 发射极具有电子供体和具有纳米孔开口的多孔阴极层。 发射极还具有设置在电子源和阴极层之间的隧穿层。