公开(公告)号：US5691648A

公开(公告)日：1997-11-25

申请号：US558434

申请日：1995-11-16

Applicant: David Cheng

Inventor： David Cheng

IPC: G01B7/06 ,  G01R27/02 ,  G01R31/26 ,  G01R31/02

CPC classification number: G01R27/02 ,  G01B7/06 ,  G01R31/2648

Abstract: A method and apparatus for measuring sheet resistance and thickness of thin films and substrates. A four-point probe assembly engages the surface of a film on a substrate, and the thickness of the substrate is determined from the point of contact between the probes and film. A measuring apparatus then outputs a voltage waveform which applies a voltage to probes of the probe assembly. An inverter inverts the voltage and provides the inverted voltage on another probe of the probe assembly, thus inducing a current in these probes of the four point probe and through the surface of the film. Two other probes measure a voltage in the film created by the current. The voltages on the current probes provide a voltage close to zero at the other probes, thus allowing these other probes to measure voltages with greater precision. The current created by the voltage waveform and the voltage created across the inner probes are measured for each voltage level of the waveform. A sheet resistance of the film is determined by calculating the slope of a least square fit line of the measured current and voltage. The sheet resistance is proportional to the slope of the least square line. The thickness of the film is calculated by dividing the film resistivity by the calculated sheet resistance.

Abstract translation: 一种用于测量薄膜和薄膜的薄层电阻和厚度的方法和装置。 四点探头组件接合衬底上的膜的表面，并且从探针和膜之间的接触点确定衬底的厚度。 然后，测量装置输出对探针组件的探头施加电压的电压波形。 逆变器反转电压并在探针组件的另一个探针上提供反相电压，从而在四点探针的这些探针中并通过膜的表面引起电流。 另外两个探头测量由电流产生的电影中的电压。 电流探头上的电压在其他探头上提供接近零的电压，从而允许其他探头以更高的精度测量电压。 针对波形的每个电压电平测量由电压波形产生的电流和内部探针产生的电压。 通过计算测量的电流和电压的最小二乘拟合线的斜率来确定膜的薄层电阻。 薄层电阻与最小二乘线的斜率成比例。 通过将膜电阻率除以计算的薄层电阻来计算膜的厚度。

公开(公告)号：US5532499A

公开(公告)日：1996-07-02

申请号：US317115

申请日：1994-10-03

Applicant: David Cheng

Inventor： David Cheng

IPC: G01B11/16 ,  G01B11/255 ,  G01B11/30 ,  H01L21/00 ,  G01N21/86

CPC classification number: H01L21/67288 ,  G01B11/16 ,  G01B11/255 ,  G01B11/306

Abstract: A method for measuring surface topography characterized by making multiple scans of the surface with a laser scanning unit and utilizing the multiple scans to create representations of the surface's topography. The surface topography data can also be used to calculate the compressive or tensile stress caused by a thin film applied to the surface of a semiconductor wafer. The apparatus of the present invention scans a laser beam across a surface in an x direction, and detects displacements of a reflected portion of the laser beam in a z direction. A pair of photodetectors are used to translate z direction displacements of the reflected beam into analog signals which are digitized and input into a microcomputer for analysis. The multiple scans of the surface are preferably accomplished by placing the workpiece on a pedestal which can be rotated to various angular positions.

Abstract translation: 一种用于测量表面形貌的方法，其特征在于用激光扫描单元对表面进行多次扫描，并利用多次扫描来创建表面的地形图。 表面形貌数据也可用于计算由施加到半导体晶片表面的薄膜引起的压缩或拉伸应力。 本发明的装置沿x方向扫描激光束的表面，并且检测激光束在z方向上的反射部分的位移。 一对光电探测器用于将反射光束的z方向位移转换为模拟信号，并将其数字化并输入微型计算机进行分析。 表面的多次扫描优选通过将工件放置在可旋转到各种角度位置的基座上来实现。

公开(公告)号：US5495178A

公开(公告)日：1996-02-27

申请号：US974853

申请日：1992-11-10

Applicant: David Cheng

Inventor： David Cheng

IPC: G01B7/06 ,  G01R27/02 ,  G01R31/26 ,  G01R31/02

CPC classification number: G01B7/06 ,  G01R27/02 ,  G01R31/2648

Abstract: A method and apparatus for measuring film thickness and sheet resistance. A four-point probe engages the surface of a film, and a measuring apparatus outputs a voltage waveform which induces a current in the outer probes of the four point probe and through the surface of the film. The two inner probes measure a voltage in the film created by the current. The current created by the voltage waveform and the voltage created across the inner probes are measured for each voltage level of the waveform. A sheet resistance of the film is calculated by taking a least square fit of the measured current and voltage and calculating the slope of the least square line fit. The sheet resistance is proportional to the slope of the least square line. The thickness of the film is calculated by dividing the film resistivity by the calculated sheet resistance.

Abstract translation: 一种测量薄膜厚度和薄层电阻的方法和装置。 四点式探针接合膜的表面，测量装置输出在四点探针的外探针中并通过膜的表面产生电流的电压波形。 两个内部探头测量由电流产生的电影中的电压。 针对波形的每个电压电平测量由电压波形产生的电流和内部探针产生的电压。 通过对所测量的电流和电压进行最小二乘拟合并计算最小二乘线拟合的斜率来计算薄膜的薄层电阻。 薄层电阻与最小二乘线的斜率成比例。 通过将膜电阻率除以计算的薄层电阻来计算膜的厚度。

公开(公告)号：US4962049A

公开(公告)日：1990-10-09

申请号：US337607

申请日：1989-04-13

Applicant: Mei Chang ,  David Cheng

Inventor： Mei Chang ,  David Cheng

IPC: C23C8/36 ,  C23C14/02 ,  C23C16/02 ,  H01L21/00 ,  H01L21/306 ,  H01L21/316 ,  H01L21/687

CPC classification number: H01L21/67069 ,  C23C14/022 ,  C23C16/0245 ,  C23C8/36 ,  H01L21/02046 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/31612 ,  H01L21/6875 ,  Y10S438/906 ,  Y10S438/928

Abstract: A process is disclosed for the treatment of the backside or back surface of a semiconductor wafer such as a silicon wafer. By spacing the back side of a semiconductor wafer a predetermined distance from a cathode in a vacuum chamber and controlling the rf power and the pressure, a confined plasma may be used both to clean the back side of the wafer to remove impurities, including moisture and other occluded gases; as well as to deposit a layer of oxide on the back surface of the wafer to inhibit subsequent deposition of poorly adherent materials on the back side of the wafer which might otherwise flake off during processing of the front side of the wafer to form integrated circuits thereon.

公开(公告)号：US4842683A

公开(公告)日：1989-06-27

申请号：US185215

申请日：1988-04-25

Applicant: David Cheng ,  Dan Maydan ,  Sasson Somekh ,  Kenneth R. Stalder ,  Dana L. Andrews ,  Mei Chang ,  John M. White ,  Jerry Y. K. Wong ,  Vladimir J. Zeitlin ,  David N. Wang

Inventor： David Cheng ,  Dan Maydan ,  Sasson Somekh ,  Kenneth R. Stalder ,  Dana L. Andrews ,  Mei Chang ,  John M. White ,  Jerry Y. K. Wong ,  Vladimir J. Zeitlin ,  David N. Wang

IPC: H05H1/46 ,  B01J3/02 ,  H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065

CPC classification number: H01L21/67069 ,  H01J37/32431 ,  H01J37/32477 ,  H01J37/32623 ,  H01J37/32743 ,  H01J37/32788 ,  H01J37/32862

Abstract: A magnetic field enhanced single wafer plasma etch reactor is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (walls and gas manifold) and a cooled wafer supporting cathode; and a unitary wafer exchange mechanism comprising wafer lift pins which extend through the pedestal and a wafer clamp ring. The lift pins and clamp ring are moved vertically by a one-axis lift mechanism to accept the wafer from a cooperating external robot blade, clamp the wafer to the pedestal and return the wafer to the blade. The electrode cooling combines water cooling for the body of the electrode and a thermal conductivity-enhancing gas parallel-bowed interface between the wafer and electrode for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device applies the cooling gas to the RF powered electrode without breakdown of the gas. Protective coatings/layers of materials such as quartz are provided for surfaces such as the clamp ring and gas manifold. The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher which provides uniformity, directionality and selectivity at high gas pressures, operates cleanly and incorporates in-situ self-cleaning capability.

Abstract translation: 公开了一种磁场增强型单晶片等离子体蚀刻反应器。 反应器的特征包括用于在高压下提供高速均匀蚀刻的电控步进磁场; 温度控制的反应器表面包括加热的阳极表面（壁和气体歧管）和冷却的晶片支撑阴极; 以及包括延伸穿过基座的晶片提升销和晶片夹紧环的整体晶片交换机构。 提升销和夹紧环通过单轴提升机构垂直移动，以从配合的外部机器人刀片接收晶片，将晶片夹紧到基座并将晶片返回到刀片。 电极冷却结合了用于电极体的水冷却和晶片和电极之间的热导率增强气体平行弓形界面，用于保持晶片表面冷却，尽管施加到电极的高功率密度。 气体馈通装置将冷却气体施加到RF供电的电极，而不会破坏气体。 为诸如夹紧环和气体歧管的表面提供保护涂层/诸如石英的材料层。 这些特征的组合提供了广泛的压力方案，高蚀刻速率，高通量单晶硅蚀刻器，其在高气体压力下提供均匀性，方向性和选择性，干净地操作并且并入现场自清洁能力。

公开(公告)号：US4496957A

公开(公告)日：1985-01-29

申请号：US54204

申请日：1979-07-02

Applicant: Thomas W. Smith ,  David Cheng ,  Anthony T. Ward

Inventor： Thomas W. Smith ,  David Cheng ,  Anthony T. Ward

IPC: B41M5/26 ,  G01D15/34 ,  G11B7/0045 ,  G11B7/24 ,  G11B7/243 ,  G11B7/244 ,  G11B7/251

CPC classification number: G11B7/251 ,  G01D15/34 ,  G11B7/00451 ,  Y10S430/146

Abstract: An optical recording member is prepared by coating a thin layer of a colloidal dispersion, of minute particles of certain transition metals or their oxides in a polymeric binder, onto a substrate. The optical recording member may be made to achieve anti-reflecting conditions at the marking wavelength by making the substrate reflective and by using proper thickness for the dispersion layer.

Abstract translation: 光学记录部件通过在基体上涂布薄层的胶体分散体（某些过渡金属或它们的氧化物的微粒）到聚合物粘合剂中而制备。 可以通过使基板反射并通过使用适当的厚度用于分散层，使光记录部件在标记波长处实现抗反射条件。

公开(公告)号：US08424896B2

公开(公告)日：2013-04-23

申请号：US13345565

申请日：2012-01-06

Applicant: Nancy Balcom ,  Louis Belanger ,  Torr Brown ,  Janusz Krawczynski ,  Phil Mundy ,  David Harding ,  David Cheng Cheng

Inventor： Nancy Balcom ,  Louis Belanger ,  Torr Brown ,  Janusz Krawczynski ,  Phil Mundy ,  David Harding ,  David Cheng Cheng

IPC: A61G5/10 ,  B62M1/14

CPC classification number: A61G5/1005 ,  A61G5/1054 ,  A61G5/1062 ,  A61G5/1064 ,  A61G5/1075 ,  A61G5/1089 ,  A61G5/125 ,  A61G5/128 ,  Y10T29/49716

Abstract: A telescoping crossbar assembly for a wheelchair comprises an inner tube that is slidable within an outer tube. The head portion of a pass-through fastener bears on the inner tube through a sufficiently large head-side aperture so as to slightly deform the inner tube and to hold the two tubes by friction in mutual engagement.

Abstract translation: 用于轮椅的伸缩横梁组件包括可在外管内滑动的内管。 通过紧固件的头部通过足够大的头侧孔承载在内管上，以使内管稍微变形并且通过相互接合的摩擦来保持两个管。

公开(公告)号：US07970943B2

公开(公告)日：2011-06-28

申请号：US11838537

申请日：2007-08-14

Applicant: David Cheng-Fang Lin ,  Mark Edward Wilcox

Inventor： David Cheng-Fang Lin ,  Mark Edward Wilcox

IPC: G06F15/16 ,  G06F7/00 ,  G06F17/30

CPC classification number: G06F17/30569

Abstract: A system manages information exchanges between components of the system so that information is provided in a format expected by each particular component. In a specific implementation, a translation service provider intercepts information exchanges between client and data sources or data services and translates of converts software identifiers (e.g., UUIDs or GUIDs) as needed so that the client or data source can properly process the data. For example, a client may use GUIDs in a first format, and when information is requested is presented using a GUID in a second format, different from the first, the translation service provider translates a GUID to the first format. The translation service provider may be transparent to the other components of the system.

Abstract translation: 系统管理系统的组件之间的信息交换，使得以每个特定组件预期的格式提供信息。 在具体实现中，翻译服务提供商拦截客户端和数据源或数据服务之间的信息交换，并根据需要翻译转换软件标识符（例如，UUID或GUID），以便客户端或数据源可以正确处理数据。 例如，客户端可以以第一格式使用GUID，并且当使用不同于第一格式的第二格式的GUID呈现请求信息时，翻译服务提供商将GUID转换为第一格式。 翻译服务提供商可能对系统的其他组件是透明的。

公开(公告)号：US07609646B1

公开(公告)日：2009-10-27

申请号：US10825030

申请日：2004-04-14

Applicant: David Cheng-Song Qi ,  Yan Wang ,  Timothy G. Wade

Inventor： David Cheng-Song Qi ,  Yan Wang ,  Timothy G. Wade

IPC: H04L12/26

CPC classification number: H04L12/66

Abstract: A system in a Voice Over Internet Protocol (VOIP) network eliminates false voice detection in voice band data service (e.g., modem or facsimile transmission) by sequentially enabling silence detection then voice detection. In Voice Band Data (VBD) mode, the system initially enables silence detection and disables voice detection. If silence is detected in a VOIP signal associated with a VOIP call, the system enables voice detection. If voice is detected, the system switches from VBD mode to voice mode and enables processing (e.g., echo cancellation and/or data compression) that improves voice communications.

Abstract translation: 通过互联网语音协议（VOIP）网络中的系统通过依次启用静音检测，然后语音检测来消除语音频带数据业务中的虚假语音检测（例如调制解调器或传真传输）。 在语音数据（VBD）模式下，系统初始化了静音检测功能，禁止语音检测。 如果在与VOIP呼叫相关联的VOIP信号中检测到静音，则系统启用语音检测。 如果检测到语音，则系统从VBD模式切换到语音模式，并且能够改善语音通信的处理（例如回声消除和/或数据压缩）。

公开(公告)号：US07583621B2

公开(公告)日：2009-09-01

申请号：US10958751

申请日：2004-10-05

Applicant: David Cheng-Song Qi ,  Yan Wang ,  Timothy G. Wade ,  William B. Page

Inventor： David Cheng-Song Qi ,  Yan Wang ,  Timothy G. Wade ,  William B. Page

IPC: H04B3/20

CPC classification number: H04B3/23

Abstract: A method, or corresponding apparatus, assumes a call is a Voice Band Data (VBD) call. The method disables a local echo canceller and transmits a tone that disables distal echo canceller(s) along a communications path across which the call is communicated. After disabling the echo cancellers, the echo cancellers are allowed to operate in a typical manner, such as according to ITU standards, after the call is established, including remaining disabled if the call is a Voice Band Data call and being automatically enabled if the call is or becomes a voice call. The method or apparatus is particularly useful in networks having Point of Service (POS) devices that have modems that do not send out a 2100 Hz tone to disable echo cancelling in the communications path. In one embodiment, the method or corresponding apparatus is deployed in a gateway.

Abstract translation: 方法或相应的装置假设呼叫是语音频带数据（VBD）呼叫。 该方法禁用本地回声消除器，并发送一个音调，禁止远程回声消除器沿着呼叫通信的通信路径。 在禁用回声消除器之后，回呼消除器被允许以典型的方式操作，例如根据ITU标准，在呼叫建立之后，包括如果呼叫是语音频带数据呼叫，则保持禁用，并且如果呼叫被自动启用 是或成为语音通话。 该方法或装置在具有不发送2100Hz音调以调制通信路径中的回波消除的调制解调器的服务点（POS）设备的网络中特别有用。 在一个实施例中，该方法或相应的装置部署在网关中。