公开(公告)号：US20060197016A1

公开(公告)日：2006-09-07

申请号：US11417027

申请日：2006-05-04

申请人： Adrian Murrell ,  Bernard Harrison ,  Peter Edwards ,  Peter Kindersley ,  Craig Lowrie ,  Peter Banks ,  Takao Sakase ,  Marvin Farley ,  Shu Satoh ,  Geoffrey Ryding

发明人： Adrian Murrell ,  Bernard Harrison ,  Peter Edwards ,  Peter Kindersley ,  Craig Lowrie ,  Peter Banks ,  Takao Sakase ,  Marvin Farley ,  Shu Satoh ,  Geoffrey Ryding

IPC分类号： H01J49/00

CPC分类号： H01J37/3171 ,  H01J37/3023 ,  H01J49/30 ,  H01J2237/20228 ,  H01J2237/20285 ,  H01J2237/24507 ,  H01J2237/2487 ,  H01J2237/30488 ,  H01J2237/31703 ,  H01J2237/31708 ,  H01L21/67005 ,  H01L21/68714 ,  H01L21/68764

摘要： An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.

公开(公告)号：US07049210B2

公开(公告)日：2006-05-23

申请号：US10754502

申请日：2004-01-12

申请人： Adrian Murrell ,  Bernard Harrison ,  Peter Ivor Tudor Edwards ,  Peter Kindersley ,  Craig Lowrie ,  Peter Michael Banks ,  Takao Sakase ,  Marvin Farley ,  Shu Satoh ,  Geoffrey Ryding

发明人： Adrian Murrell ,  Bernard Harrison ,  Peter Ivor Tudor Edwards ,  Peter Kindersley ,  Craig Lowrie ,  Peter Michael Banks ,  Takao Sakase ,  Marvin Farley ,  Shu Satoh ,  Geoffrey Ryding

IPC分类号： H01L21/26

CPC分类号： H01J37/3171 ,  H01J37/3023 ,  H01J49/30 ,  H01J2237/20228 ,  H01J2237/20285 ,  H01J2237/24507 ,  H01J2237/2487 ,  H01J2237/30488 ,  H01J2237/31703 ,  H01J2237/31708 ,  H01L21/67005 ,  H01L21/68714 ,  H01L21/68764

摘要： An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.

公开(公告)号：US06998626B1

公开(公告)日：2006-02-14

申请号：US11015740

申请日：2004-12-20

申请人： Geoffrey Ryding ,  Shu Satoh

发明人： Geoffrey Ryding ,  Shu Satoh

IPC分类号： H01J37/317 ,  H01J49/10

CPC分类号： H01J37/3171 ,  H01J27/022 ,  H01J37/08 ,  H01J2237/061 ,  H01J2237/0815 ,  H01J2237/083

摘要： This invention relates to a method of producing a dopant gas species containing a required dopant element for implanting in a target and to an ion source for implementing such a method. In particular, although not exclusively, this invention relates to producing dopant ions for implanting in semiconductor wafers using an ion implanter. The present invention provides a method of producing a dopant gas species containing a required dopant element for implanting in a target, the method comprising: exposing a source mass of the element to gaseous bromine and element react to form a reactant product, and ionising the reactant product to produce ions of the dopant gas species.

摘要翻译： 本发明涉及一种制备掺杂气体种类的方法，所述掺杂剂气体物质含有用于植入目标物的所需掺杂剂元素和用于实现这种方法的离子源。 具体地说，尽管并非排他地，本发明涉及使用离子注入机产生用于在半导体晶片中注入的掺杂剂离子。 本发明提供了一种制备掺杂气体种类的方法，所述掺杂剂气体物质含有用于注入目标物的所需掺杂剂元素，所述方法包括：将元素的源物质暴露于气态溴和元素反应以形成反应物产物，并使反应物 产物以产生掺杂气体种类的离子。

公开(公告)号：US06989315B2

公开(公告)日：2006-01-24

申请号：US09884451

申请日：2001-06-19

申请人： Robert Dolan ,  Bernhard Cordts ,  Marvin Farley ,  Geoffrey Ryding

发明人： Robert Dolan ,  Bernhard Cordts ,  Marvin Farley ,  Geoffrey Ryding

IPC分类号： H01L21/76

CPC分类号： H01J37/3171

摘要： An ion implantation system for producing silicon wafers having relatively low defect densities, e.g., below about 1×106/cm2, includes a fluid port in the ion implantation chamber for introducing a background gas into the chamber during the ion implantation process. The introduced gas, such as water vapor, reduces the defect density of the top silicon layer that is separated from the buried silicon dioxide layer.

摘要翻译： 用于生产具有相对低的缺陷密度（例如低于约1×10 6 / cm 2）的硅晶片的离子注入系统包括离子注入室中的流体端口，用于引入 背景气体在离子注入过程中进入腔室。 引入的气体，例如水蒸气，降低了与掩埋二氧化硅层分离的顶部硅层的缺陷密度。

公开(公告)号：US06689221B2

公开(公告)日：2004-02-10

申请号：US09820497

申请日：2001-03-28

申请人： Geoffrey Ryding ,  Theodore H. Smick

发明人： Geoffrey Ryding ,  Theodore H. Smick

IPC分类号： C23C1600

CPC分类号： C23C16/466 ,  C23C14/505 ,  C23C16/4584 ,  H01L21/67109

摘要： A semiconductor substrate support apparatus comprises a support chuck having at least one chuck manifold extending through the support chuck, and a rotatable shaft coupled to the support chuck. The shaft has at least one shaft conduit disposed therein and extends through the support chuck. A housing circumscribes the shaft and has a housing conduit adapted for connection to a gas source. A plurality of seals are disposed between the shaft and the housing and thereby define a radial passageway between the at least one shaft conduit and the housing conduit for providing a backside gas to a backside of a wafer disposed on the rotating support chuck.

摘要翻译： 半导体衬底支撑装置包括支撑卡盘，其具有延伸穿过支撑卡盘的至少一个卡盘歧管和联接到支撑卡盘的可旋转轴。 轴具有至少一个设置在其中的轴导管，并延伸穿过支撑卡盘。 壳体围绕轴并且具有适于连接到气体源的壳体导管。 多个密封件设置在轴和壳体之间，从而在至少一个轴导管和壳体管道之间限定径向通道，用于将背侧气体提供到设置在旋转支撑卡盘上的晶片的背面。

公开(公告)号：US06501078B1

公开(公告)日：2002-12-31

申请号：US09527031

申请日：2000-03-16

申请人： Geoffrey Ryding ,  Theodore H. Smick ,  Marvin Farley ,  Takao Sakase

发明人： Geoffrey Ryding ,  Theodore H. Smick ,  Marvin Farley ,  Takao Sakase

IPC分类号： H01J3715

CPC分类号： H01J37/15 ,  H01J37/08 ,  H01J49/28 ,  H01J2237/31701

摘要： An ion electrode extraction assembly comprising an ion source 20 and at least one electrode 50 having a gap through which a beam of extracted ions passes in use. An electrode manipulator assembly 55 is provided to move the electrode so as to vary the width of the gap transversely to the ion beam, move the electrode transversely to the ion beam, and move the electrode in the direction of the ion beam. The three degrees of movement being carried out independently of one another.

摘要翻译： 一种离子电极提取组件，其包括离子源20和至少一个具有间隙的电极50，所提取的离子束在使用中通过该间隙通过。 提供电极操纵器组件55以移动电极，以便横向于离子束改变间隙的宽度，将电极横向于离子束移动，并且沿着离子束的方向移动电极。 三个运动方式彼此独立地进行。

公开(公告)号：US06271530B1

公开(公告)日：2001-08-07

申请号：US09293954

申请日：1999-04-19

申请人： Theodore H. Smick ,  Marvin Farley ,  Takao Sakase ,  Geoffrey Ryding

发明人： Theodore H. Smick ,  Marvin Farley ,  Takao Sakase ,  Geoffrey Ryding

IPC分类号： H01J3720

CPC分类号： F16C32/0603 ,  F16C32/0662 ,  F16C32/067 ,  F16C33/748 ,  F16C2300/62 ,  Y10S277/913

摘要： A fluid bearing and seal for an ion implanter is disclosed. The fluid bearing has a stator attached to a base and a moving member provided over the stator so that a fluid bearing can be formed between the opposing surfaces of the stator and the moving member. Either the base or the stator has a locating member extending normal to the bearing surface and the other one of either the base or the stator has a recess shaped to receive the locating member. A fluid seal enables the member to slide in the recess in the normal direction to seal off an enclosed volume between the member and the other one of either the stator or the base. A plurality of fixtures are distributed at points in a plane parallel to the bearing surface to fix the locating member and the other one of either the stator or the base together at these points to form the enclosed volume. The number of the fixtures is the minimum necessary so that the bearing surface of the stator remains undistorted. A fluid controller controls the supply of a fluid to the enclosed volume to maintain the planar bearing surface undistorted under the loading of the moving member.

摘要翻译： 公开了用于离子注入机的流体轴承和密封件。 流体轴承具有附接到基座的定子和设置在定子上方的移动构件，使得可以在定子和移动构件的相对表面之间形成流体轴承。 基座或定子都具有垂直于支承表面延伸的定位构件，底座或定子中的另一个具有成形为容纳定位构件的凹部。 流体密封使得构件能够在凹部中在正常方向上滑动以密封构件和定子或基座中的另一个之间的封闭容积。 多个夹具分布在平行于支承表面的平面上的点处，以将定位构件和定子或底座中的另一个固定在这些点上以形成封闭的容积。 固定装置的数量是必需的最小值，使定子的支承面保持不变。 流体控制器控制向封闭容积供应流体，以在移动构件的载荷下使平面支承表面保持不变。

公开(公告)号：US06248642B1

公开(公告)日：2001-06-19

申请号：US09339633

申请日：1999-06-24

申请人： Robert Dolan ,  Bernhard Cordts ,  Marvin Farley ,  Geoffrey Ryding

发明人： Robert Dolan ,  Bernhard Cordts ,  Marvin Farley ,  Geoffrey Ryding

IPC分类号： H01L2176

CPC分类号： H01J37/3171

摘要： An ion implantation system for producing silicon wafers having relatively low defect densities, e.g., below about 1×106/cm2, includes a fluid port in the ion implantation chamber for introducing a background gas into the chamber during the ion implantation process. The introduced gas, such as water vapor, reduces the defect density of the top silicon layer that is separated from the buried silicon dioxide layer.

摘要翻译： 用于生产具有相对较低缺陷密度（例如低于约1×10 6 / cm 2）的硅晶片的离子注入系统包括离子注入室中的流体端口，用于在离子注入工艺期间将背景气体引入室中。 引入的气体，例如水蒸气，降低了与掩埋二氧化硅层分离的顶部硅层的缺陷密度。

公开(公告)号：US5898179A

公开(公告)日：1999-04-27

申请号：US926650

申请日：1997-09-10

申请人： Theodore H. Smick ,  Geoffrey Ryding ,  Marvin Farley

发明人： Theodore H. Smick ,  Geoffrey Ryding ,  Marvin Farley

IPC分类号： C23C14/48 ,  H01J37/317 ,  H01L21/265 ,  H01L21/677 ,  H01L21/68 ,  H01J37/00

CPC分类号： H01L21/68 ,  H01J37/3171 ,  H01J2237/20228

摘要： An apparatus used to control a workpiece inside a vacuum chamber. The workpiece is supported on a workpiece holder in the vacuum chamber. The workpiece is isolated from the atmosphere outside of the vacuum chamber by differentially pumped vacuum seals and an integral air bearing support. The differentially pumped vacuum seals and integral air bearing support allow for multiple independent motions to be transmitted to the workpiece supported by the workpiece holder. The workpiece holder motions provided are (1) rotation about the X axis, (2) translation back and forth along the Y direction of an X-Y plane on the surface of the workpiece holder, and (3) rotation of the workpiece in the X-Y plane about its Z axis. Concentric seals, oval for the translation motion and circular for the rotational motion, are differentially pumped through common ports to provide successively decreasing pressure and gas flow in order to reduce the gas load into the vacuum vessel to a negligible rate.