公开(公告)号：US09822443B1

公开(公告)日：2017-11-21

申请号：US15010653

申请日：2016-01-29

Applicant: Multibeam Corporation

Inventor： Michael C. Smayling ,  Kevin M. Monahan ,  David K. Lam ,  Theodore A. Prescop

IPC: H01J37/30 ,  C23C14/48

CPC classification number: H01L21/3065 ,  B81C1/00373 ,  B81C2201/0143 ,  B81C2201/0188 ,  C23C14/48 ,  C23C16/047 ,  C23C16/48 ,  C23C16/486 ,  C23C16/487 ,  H01J37/05 ,  H01J37/06 ,  H01J37/08 ,  H01J37/228 ,  H01J37/244 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305 ,  H01J37/3053 ,  H01J37/3056 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J37/3178 ,  H01J2237/004 ,  H01J2237/0635 ,  H01J2237/1501 ,  H01J2237/24592 ,  H01J2237/30466 ,  H01J2237/30472 ,  H01J2237/31708 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/26 ,  H01L21/308 ,  H01L21/3085 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: Methods, devices and systems for targeted, maskless modification of material on or in a substrate using charged particle beams. Electrostatically-deflected charged particle beam columns can be targeted in direct dependence on the design layout database to perform direct and knock-on ion implantation, producing patterned material modifications with selected chemical and 3D-structural profiles. The number of required process steps is reduced, reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Local gas and photon injectors and detectors are local to corresponding individual columns, and support superior, highly-configurable process execution and control. Targeted implantation can be used to prepare the substrate for patterned blanket etch; patterned ALD can be used to prepare the substrate for patterned blanket deposition; neither process requiring photomasks or resist. Arrays of highly configurable beam columns can also be used to perform both positive and negative tone lithography in a single pass.

公开(公告)号：US07253424B2

公开(公告)日：2007-08-07

申请号：US11417027

申请日：2006-05-04

Applicant: Adrian Murrell ,  Bernard Harrison ,  Peter Ivor Tudor Edwards ,  Peter Kindersley ,  Craig Lowrie ,  Peter Michael Banks ,  Takao Sakase ,  Marvin Farley ,  Shu Satoh ,  Geoffrey Ryding

Inventor： Adrian Murrell ,  Bernard Harrison ,  Peter Ivor Tudor Edwards ,  Peter Kindersley ,  Craig Lowrie ,  Peter Michael Banks ,  Takao Sakase ,  Marvin Farley ,  Shu Satoh ,  Geoffrey Ryding

IPC: H01L21/26 ,  G21K5/10

CPC classification number: H01J37/3171 ,  H01J37/3023 ,  H01J49/30 ,  H01J2237/20228 ,  H01J2237/20285 ,  H01J2237/24507 ,  H01J2237/2487 ,  H01J2237/30488 ,  H01J2237/31703 ,  H01J2237/31708 ,  H01L21/67005 ,  H01L21/68714 ,  H01L21/68764

Abstract: An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.

公开(公告)号：US10020200B1

公开(公告)日：2018-07-10

申请号：US14966165

申请日：2015-12-11

Applicant: Multibeam Corporation

Inventor： Kevin M. Monahan ,  Theodore A. Prescop ,  Michael C. Smayling ,  David K. Lam

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/308 ,  H01L21/66

CPC classification number: H01L21/3065 ,  B81C1/00373 ,  B81C2201/0143 ,  B81C2201/0188 ,  C23C14/48 ,  C23C16/047 ,  C23C16/48 ,  C23C16/486 ,  C23C16/487 ,  H01J37/05 ,  H01J37/06 ,  H01J37/08 ,  H01J37/228 ,  H01J37/244 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305 ,  H01J37/3053 ,  H01J37/3056 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J37/3178 ,  H01J2237/004 ,  H01J2237/0635 ,  H01J2237/1501 ,  H01J2237/24592 ,  H01J2237/30466 ,  H01J2237/30472 ,  H01J2237/31708 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/26 ,  H01L21/308 ,  H01L21/3085 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: Methods and systems for direct atomic layer etching and deposition on or in a substrate using charged particle beams. Electrostatically-deflected charged particle beam columns can be targeted in direct dependence on the design layout database to perform atomic layer etch and atomic layer deposition, expressing pattern with selected 3D-structure. Reducing the number of process steps in patterned atomic layer etch and deposition reduces manufacturing cycle time and increases yield by lowering the probability of defect introduction. Local gas and photon injectors and detectors are local to corresponding columns, and support superior, highly-configurable process execution and control.

公开(公告)号：US07421973B2

公开(公告)日：2008-09-09

申请号：US10762114

申请日：2004-01-21

Applicant: Peter L. Kellerman ,  Victor M. Benveniste ,  William F. DiVergili ,  Michael P. Bradley

Inventor： Peter L. Kellerman ,  Victor M. Benveniste ,  William F. DiVergili ,  Michael P. Bradley

IPC: C23C16/00 ,  C23C14/00 ,  C23C14/32 ,  H01J3/26 ,  H01J49/42 ,  H01J49/26 ,  B01D59/44

CPC classification number: H01J37/321 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/0815 ,  H01J2237/083 ,  H01J2237/31708

Abstract: An ion shower comprises a plasma source operable to generate source gas ions within a chamber, and an extraction assembly associated with a top portion of the chamber. The extraction assembly is operable to extract ions from the top portion of the chamber. The ion shower further comprises a workpiece support structure associated with the top portion of the chamber that is operable to secure the workpiece having an implantation surface orientated facing downward toward the extraction assembly for implantation thereof. The ion shower of the present invention advantageously facilitates SIMOX processing with a high oxygen fraction, and uniform beam current for next generation processing.

Abstract translation: 离子淋浴器包括可操作以在室内产生源气体离子的等离子体源，以及与腔室的顶部相关联的提取组件。 提取组件可操作以从腔室的顶部提取离子。 离子淋浴器还包括与室的顶部相关联的工件支撑结构，该工件支撑结构可操作以将具有朝向朝向提取组件定向的注入表面的工件固定以用于其植入。 本发明的离子淋浴器有利地促进了具有高氧分数的SIMOX处理和用于下一代处理的均匀束流。

公开(公告)号：US20080128640A1

公开(公告)日：2008-06-05

申请号：US11445643

申请日：2006-06-01

Applicant: Kyoung Bong Rouh ,  Seung Woo Jin ,  Min Yong Lee ,  Yong Soo Jung

Inventor： Kyoung Bong Rouh ,  Seung Woo Jin ,  Min Yong Lee ,  Yong Soo Jung

IPC: H01J37/08

CPC classification number: H01J37/3172 ,  H01J37/045 ,  H01J2237/30472 ,  H01J2237/31703 ,  H01J2237/31708

Abstract: An ion implantation apparatus comprises an ion beam source for generating an initial ion beam, a bundled ion beam generator adapted to change the initial ion beam into a bundled ion beam based on a predetermined frequency to pass the bundled ion beam for a first time while passing the initial ion beam for a second time, a beam line for accelerating the ion beam having passed through the ion beam generator, and an end station for arranging a wafer therein to allow the ion beam accelerated by the beam line to be implanted in the wafer, the end station operating to move the wafer in a direction perpendicular to an ion beam implantation direction, so as to implant the bundled ion beam in a first region of the wafer and the initial ion beam in a second region of the wafer.

Abstract translation: 离子注入装置包括用于产生初始离子束的离子束源，捆扎离子束发生器，其适于基于预定频率将初始离子束改变成束状离子束，以在经过第一次时通过束状离子束 初始离子束第二次，用于加速已经通过离子束发生器的离子束的束线，以及用于在其中布置晶片以使由束线加速的离子束被植入晶片的终端站 ，所述终端站操作以沿垂直于离子束注入方向的方向移动所述晶片，以将所述束状离子束注入所述晶片的第一区域中，并将所述初始离子束注入所述晶片的第二区域。

公开(公告)号：US20040191931A1

公开(公告)日：2004-09-30

申请号：US10754502

申请日：2004-01-12

Applicant: APPLIED MATERIALS INC.

Inventor： Adrian Murrell ,  Bernard F. Harrison ,  Peter Ivor Tudor Edwards ,  Peter Kindersley ,  Craig Lowrie ,  Peter Michael Banks ,  Takao Sakase ,  Marvin Farley ,  Shu Satoh ,  Geoffrey Ryding

IPC: H01L021/00

CPC classification number: H01J37/3171 ,  H01J37/3023 ,  H01J49/30 ,  H01J2237/20228 ,  H01J2237/20285 ,  H01J2237/24507 ,  H01J2237/2487 ,  H01J2237/30488 ,  H01J2237/31703 ,  H01J2237/31708 ,  H01L21/67005 ,  H01L21/68714 ,  H01L21/68764

Abstract: An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.

公开(公告)号：US09466464B1

公开(公告)日：2016-10-11

申请号：US14694710

申请日：2015-04-23

Applicant: Multibeam Corporation

Inventor： David K. Lam ,  Kevin M. Monahan ,  Michael C. Smayling ,  Theodore A. Prescop

IPC: H01J37/30 ,  H01J37/305 ,  H01J37/22 ,  H01J37/05 ,  H01J37/304 ,  H01J37/317

CPC classification number: H01L21/3065 ,  B81C1/00373 ,  B81C2201/0143 ,  B81C2201/0188 ,  C23C14/48 ,  C23C16/047 ,  C23C16/48 ,  C23C16/486 ,  C23C16/487 ,  H01J37/05 ,  H01J37/06 ,  H01J37/08 ,  H01J37/228 ,  H01J37/244 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305 ,  H01J37/3053 ,  H01J37/3056 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J37/3178 ,  H01J2237/004 ,  H01J2237/0635 ,  H01J2237/1501 ,  H01J2237/24592 ,  H01J2237/30466 ,  H01J2237/30472 ,  H01J2237/31708 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/26 ,  H01L21/308 ,  H01L21/3085 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: Methods, devices and systems for patterning of substrates using charged particle beams without photomasks and without a resist layer. Material can be removed from a substrate, as directed by a design layout database, localized to positions targeted by multiple, matched charged particle beams. Reducing the number of process steps, and eliminating lithography steps, in localized material removal has the dual benefit of reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Furthermore, highly localized, precision material removal allows for controlled variation of removal rate and enables creation of 3D structures or profiles. Local gas injectors and detectors, and local photon injectors and detectors, are local to corresponding ones of the columns, and can be used to facilitate rapid, accurate, targeted substrate processing.

Abstract translation: 用于使用没有光掩模并且没有抗蚀剂层的带电粒子束来图案化衬底的方法，装置和系统。 材料可以从设计布局数据库指导的基板上移除，该设计布局数据库被定位到由多个匹配的带电粒子束瞄准的位置。 在局部材料去除中减少工艺步骤的数量和消除光刻步骤具有减少制造周期时间并通过降低缺陷引入概率来提高产量的双重优点。 此外，高度局部化的精密材料去除允许控制的去除速率的变化，并且能够创建3D结构或轮廓。 本地气体注入器和检测器以及本地光子注入器和检测器对应于相应的列是局部的，并且可以用于促进快速，准确的靶向基板处理。

公开(公告)号：US09453281B1

公开(公告)日：2016-09-27

申请号：US14745463

申请日：2015-06-21

Applicant: Multibeam Corporation

Inventor： Theodore A. Prescop ,  Kevin M. Monahan ,  David K. Lam ,  Michael C. Smayling

IPC: C23C16/48 ,  H01J37/08 ,  H01J37/30 ,  H01J37/244 ,  H01J37/06

CPC classification number: H01L21/3065 ,  B81C1/00373 ,  B81C2201/0143 ,  B81C2201/0188 ,  C23C14/48 ,  C23C16/047 ,  C23C16/48 ,  C23C16/486 ,  C23C16/487 ,  H01J37/05 ,  H01J37/06 ,  H01J37/08 ,  H01J37/228 ,  H01J37/244 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305 ,  H01J37/3053 ,  H01J37/3056 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J37/3178 ,  H01J2237/004 ,  H01J2237/0635 ,  H01J2237/1501 ,  H01J2237/24592 ,  H01J2237/30466 ,  H01J2237/30472 ,  H01J2237/31708 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/26 ,  H01L21/308 ,  H01L21/3085 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: Methods, devices and systems for patterning of substrates using charged particle beams without photomasks and without a resist layer. Material can be deposited onto a substrate, as directed by a design layout database, localized to positions targeted by multiple, matched charged particle beam columns. Reducing the number of process steps, and eliminating lithography steps, in localized material addition has the dual benefit of reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Furthermore, highly localized, precision material deposition allows for controlled variation of deposition rate and enables creation of 3D structures. Local gas injectors and detectors, and local photon injectors and detectors, are local to corresponding ones of the columns, and can be used to facilitate rapid, accurate, targeted, highly configurable substrate processing, advantageously using large arrays of said beam columns.

Abstract translation: 用于使用没有光掩模并且没有抗蚀剂层的带电粒子束来图案化衬底的方法，装置和系统。 材料可以沉积到衬底上，如设计布局数据库所指示的那样，被定位到由多个匹配的带电粒子束柱靶向的位置上。 减少工艺步骤的数量和消除光刻步骤在局部化材料添加中具有减少制造周期时间并通过降低缺陷引入概率来提高产量的双重优点。 此外，高度局部化的精密材料沉积允许沉积速率的受控变化并且能够创建3D结构。 局部气体注入器和检测器以及本地光子注入器和检测器对于相应的列是局部的，并且可以用于促进快速，准确，有针对性的高度可配置的衬底处理，有利地使用所述束柱的大阵列。

公开(公告)号：US07791041B2

公开(公告)日：2010-09-07

申请号：US12233151

申请日：2008-09-18

Applicant: Takatoshi Yamashita ,  Tadashi Ikejiri ,  Keiko Kuzawa ,  Hideyuki Fujiwara

Inventor： Takatoshi Yamashita ,  Tadashi Ikejiri ,  Keiko Kuzawa ,  Hideyuki Fujiwara

IPC: H01J37/08 ,  H01J27/02 ,  H01J27/08

CPC classification number: H01J27/14 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/061 ,  H01J2237/082 ,  H01J2237/083 ,  H01J2237/24542 ,  H01J2237/304 ,  H01J2237/30472 ,  H01J2237/31708 ,  H01J2237/3171

Abstract: This ion source generates a ribbon-like ion beam whose dimension in the Y direction is larger than the dimension in the X direction. This ion source includes a plasma generating vessel having an ion extraction port extending in the Y direction, a plurality of cathodes arranged in a plurality of stages along the Y direction on one side in the X direction in the plasma generating vessel, a reflecting electrode arranged on the other side in the X direction in the plasma generating vessel opposite to the cathodes, and electromagnets for generating magnetic fields along the X direction in regions including the plurality of cathodes in the plasma generating vessel.

Abstract translation: 该离子源产生其Y方向的尺寸大于X方向的尺寸的带状离子束。 该离子源包括具有沿Y方向延伸的离子提取口的等离子体发生容器，在等离子体发生容器中沿着X方向的一侧沿着Y方向排列成多个的多个阴极，反射电极配置 在与阴极相反的等离子体发生容器中的X方向的另一侧，以及用于在等离子体发生容器中包括多个阴极的区域沿着X方向产生磁场的电磁体。

公开(公告)号：US07554106B2

公开(公告)日：2009-06-30

申请号：US11445643

申请日：2006-06-01

Applicant: Kyoung Bong Rouh ,  Seung Woo Jin ,  Min Yong Lee ,  Yong Soo Jung

Inventor： Kyoung Bong Rouh ,  Seung Woo Jin ,  Min Yong Lee ,  Yong Soo Jung

IPC: G21K5/10 ,  H01J37/08

CPC classification number: H01J37/3172 ,  H01J37/045 ,  H01J2237/30472 ,  H01J2237/31703 ,  H01J2237/31708

Abstract: An ion implantation apparatus comprises an ion beam source for generating an initial ion beam, a bundled ion beam generator adapted to change the initial ion beam into a bundled ion beam based on a predetermined frequency to pass the bundled ion beam for a first time while passing the initial ion beam for a second time, a beam line for accelerating the ion beam having passed through the ion beam generator, and an end station for arranging a wafer therein to allow the ion beam accelerated by the beam line to be implanted in the wafer, the end station operating to move the wafer in a direction perpendicular to an ion beam implantation direction, so as to implant the bundled ion beam in a first region of the wafer and the initial ion beam in a second region of the wafer.

Abstract translation: 离子注入装置包括用于产生初始离子束的离子束源，捆扎离子束发生器，其适于基于预定频率将初始离子束改变成束状离子束，以在经过第一次时通过束状离子束 初始离子束第二次，用于加速已经通过离子束发生器的离子束的束线，以及用于在其中布置晶片以使由束线加速的离子束被植入晶片的终端站 ，所述终端站操作以沿垂直于离子束注入方向的方向移动所述晶片，以将所述束状离子束注入所述晶片的第一区域中，并将所述初始离子束注入所述晶片的第二区域。