公开(公告)号：US20140070249A1

公开(公告)日：2014-03-13

申请号：US13835555

申请日：2013-03-15

申请人： Yeo Chan Yoon ,  Sung Joo Oh ,  Jae Hwan Jung ,  Jin Seong Kim ,  Bong Kul Min

发明人： Yeo Chan Yoon ,  Sung Joo Oh ,  Jae Hwan Jung ,  Jin Seong Kim ,  Bong Kul Min

IPC分类号： H01L33/62

CPC分类号： H01L33/62 ,  H01L25/167 ,  H01L33/54 ,  H01L2224/16 ,  H01L2924/1301 ,  H01L2924/00

摘要： A light emitting device according to the embodiment includes a body; a first lead electrode having a first bonding part and a second bonding part; a second lead electrode having a third bonding part and a fourth bonding part; a gap part between the first and second lead electrodes; a third lead electrode on a bottom surface of the body; a fourth lead electrode on the bottom surface of the body; a first connection electrode; a second connection electrode; a light emitting chip; and a first bonding member, wherein the gap part includes a first gap part disposed between the first and third bonding parts, and the first gap part includes first and second regions spaced apart from each other corresponding to a width of the third bonding part, and a third region connected to the first and second regions and disposed perpendicularly to the first and second regions.

摘要翻译： 根据实施例的发光器件包括主体; 具有第一接合部和第二接合部的第一引线电极; 具有第三接合部和第四接合部的第二引线电极; 第一和第二引线电极之间的间隙部分; 主体底面上的第三引线电极; 身体底面上的第四引线电极; 第一连接电极; 第二连接电极; 发光芯片; 和第一接合部件，其中所述间隙部分包括设置在所述第一和第三接合部之间的第一间隙部分，并且所述第一间隙部分包括与所述第三接合部的宽度相对应的彼此间隔开的第一和第二区域，以及 连接到第一和第二区域并垂直于第一和第二区域设置的第三区域。

公开(公告)号：US08541258B2

公开(公告)日：2013-09-24

申请号：US13091614

申请日：2011-04-21

申请人： Min-Kyu Kim ,  Jong-Han Jeong ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo ,  Jin-Seong Park ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hui-Won Yang

发明人： Min-Kyu Kim ,  Jong-Han Jeong ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo ,  Jin-Seong Park ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hui-Won Yang

IPC分类号： H01L21/00

CPC分类号： H01L29/7869 ,  H01L29/78606

摘要： A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

摘要翻译： 使用氧化物半导体作为有源层的薄膜晶体管（TFT），TFT的制造方法以及具有TFT的平板显示装置包括：形成在基板上的源极和漏极; 由设置在源极和漏极上的氧化物半导体形成的有源层; 栅电极; 以及形成在活性层的顶表面和底表面中的至少一个上的界面稳定层。 在TFT中，界面稳定层由带隙为3.0〜8.0eV的氧化物形成。 由于界面稳定层具有与栅极绝缘层和钝化层相同的特性，因此保持了化学上高的界面稳定性。 由于界面稳定层具有等于或大于有源层的带隙，所以物理地防止了电荷俘获。

公开(公告)号：US08525318B1

公开(公告)日：2013-09-03

申请号：US12943540

申请日：2010-11-10

申请人： Jin Seong Kim ,  Dong Joo Park ,  Kwang Ho Kim ,  Ye Sul Ahn

发明人： Jin Seong Kim ,  Dong Joo Park ,  Kwang Ho Kim ,  Ye Sul Ahn

IPC分类号： H01L23/02

CPC分类号： H01L23/3128 ,  H01L21/563 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/92 ,  H01L25/105 ,  H01L2224/0401 ,  H01L2224/16225 ,  H01L2224/26175 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/92125 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/1094 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/1815 ,  H01L2924/00012 ,  H01L2924/00

摘要： Disclosed are a semiconductor device capable of efficiently radiating heat of a semiconductor die and a method of fabricating the same. The semiconductor device efficiently radiates the heat by preventing an encapsulant from reaching the semiconductor die by an encapsulant dam so that an upper surface of the semiconductor die is exposed out of the encapsulant. In addition, the semiconductor device is configured to expose a pre-solder ball or a conductive pattern of a substrate through a via of the encapsulant. Therefore, electrical connection between the pre-solder ball and a solder ball of another semiconductor device stacked thereon is easily achieved.

摘要翻译： 公开了能够有效地辐射半导体管芯的热的半导体器件及其制造方法。 半导体器件通过防止密封剂通过密封剂坝到达半导体管芯而有效地散热，使得半导体管芯的上表面暴露于密封剂外。 此外，半导体器件被配置为通过密封剂的通孔来暴露衬底的预焊球或导电图案。 因此，可以容易地实现预焊球与另一半导体器件的焊球之间的电连接。

公开(公告)号：US08470454B2

公开(公告)日：2013-06-25

申请号：US13033842

申请日：2011-02-24

申请人： Nam-Soo Kim ,  Myeong-Soon Kang ,  Ho-Kuk Jung ,  Eui-Su Kang ,  Young-Sung Park ,  Mi-Young Chae ,  Jin-Seong Park

发明人： Nam-Soo Kim ,  Myeong-Soon Kang ,  Ho-Kuk Jung ,  Eui-Su Kang ,  Young-Sung Park ,  Mi-Young Chae ,  Jin-Seong Park

IPC分类号： H01L51/54

CPC分类号： H01L51/0067 ,  C09B1/00 ,  C09B57/00 ,  C09B57/001 ,  H01L51/0059 ,  H01L51/0081 ,  H01L51/5012 ,  H01L51/5048 ,  H01L51/5092 ,  Y02E10/549

摘要： A material for an organic photoelectric device and an organic photoelectric device including the same, the material including an asymmetric compound represented by the following Chemical Formula 1: wherein, in Chemical Formula 1, Ar1 is hydrogen or a substituted or unsubstituted aryl, provided that when Ar1 is a substituted aryl having a substituent, Ar2 is not the same as the substituent of Ar1, Ar2 and Ar3 are each independently a substituted or unsubstituted carbazolyl, a substituted or unsubstituted C2 to C30 heteroaryl, a substituted or unsubstituted C2 to C30 arylamine, or a substituted or unsubstituted C2 to C30 heteroarylamine, L1 and L2 are each independently a substituted or unsubstituted phenylene, a substituted or unsubstituted naphthylene, or a substituted or unsubstituted anthracene, and m and n are each independently integers of 1 to 4.

摘要翻译： 用于有机光电装置的材料和包含该有机光电装置的有机光电装置，该材料包括由以下化学式1表示的不对称化合物：其中在化学式1中，Ar 1为氢或取代或未取代的芳基，条件是当 Ar 1是具有取代基的取代芳基，Ar 2与Ar 1的取代基不同，Ar 2和Ar 3各自独立地为取代或未取代的咔唑基，取代或未取代的C 2至C 30杂芳基，取代或未取代的C 2至C 30芳基胺， 或取代或未取代的C2至C30杂芳基胺，L1和L2各自独立地为取代或未取代的亚苯基，取代或未取代的亚萘基或取代或未取代的蒽，m和n各自独立地为1至4的整数。

公开(公告)号：US08421131B2

公开(公告)日：2013-04-16

申请号：US12929817

申请日：2011-02-17

申请人： Hyun-jong Chung ,  Seung-jae Baek ,  Sun-ae Seo ,  Yun-sung Woo ,  Jin-seong Heo ,  David Seo

发明人： Hyun-jong Chung ,  Seung-jae Baek ,  Sun-ae Seo ,  Yun-sung Woo ,  Jin-seong Heo ,  David Seo

IPC分类号： H01L29/78

CPC分类号： H01L29/66045 ,  H01L23/522 ,  H01L27/0688 ,  H01L27/124 ,  H01L29/1606 ,  H01L29/45 ,  H01L29/7781 ,  H01L29/78684 ,  H01L2924/0002 ,  H01L2924/00

摘要： A graphene electronic device may include a silicon substrate, connecting lines on the silicon substrate, a first electrode and a second electrode on the silicon substrate, and an interlayer dielectric on the silicon substrate. The interlayer dielectric may be configured to cover the connecting lines and the first and second electrodes and the interlayer dielectric may be further configured to expose at least a portion of the first and second electrodes. The graphene electronic device may further include an insulating layer on the interlayer dielectric and a graphene layer on the insulating layer, the graphene layer having a first end and a second end. The first end of the graphene layer may be connected to the first electrode and the second end of the graphene layer may be connected to the second electrode.

摘要翻译： 石墨烯电子器件可以包括硅衬底，硅衬底上的连接线，硅衬底上的第一电极和第二电极，以及硅衬底上的层间电介质。 层间电介质可以被配置为覆盖连接线，并且第一和第二电极和层间电介质可以被进一步配置为暴露第一和第二电极的至少一部分。 所述石墨烯电子器件还可以包括在所述层间电介质上的绝缘层和所述绝缘层上的石墨烯层，所述石墨烯层具有第一端和第二端。 石墨烯层的第一端可以连接到第一电极，并且石墨烯层的第二端可以连接到第二电极。

公开(公告)号：US20130048948A1

公开(公告)日：2013-02-28

申请号：US13593708

申请日：2012-08-24

申请人： Jin-seong HEO ,  Seong-jun PARK ,  Hyun-jong CHUNG ,  Hyun-jae SONG ,  Hee-jun YANG ,  David SEO

发明人： Jin-seong HEO ,  Seong-jun PARK ,  Hyun-jong CHUNG ,  Hyun-jae SONG ,  Hee-jun YANG ,  David SEO

IPC分类号： H01L29/78 ,  B82Y99/00

CPC分类号： H01L29/1606 ,  B82Y10/00 ,  H01L21/823807 ,  H01L27/092 ,  H01L29/66045 ,  H01L29/78684

摘要： Inverter logic devices include a gate oxide on a back substrate, a first graphene layer and a second graphene layer separated from each other on the gate oxide, a first electrode layer and a first semiconductor layer separated from each other on the first graphene layer, a second electrode layer and a second semiconductor layer separated from each other on the second graphene layer, and an output electrode on the first and second semiconductor layers and configured to output an output signal. The first semiconductor layer is doped with a different type of impurities selected from n-type impurities and p-type impurities than the second semiconductor layer.

摘要翻译： 逆变器逻辑器件包括背面衬底上的栅极氧化物，在栅极氧化物上彼此分离的第一石墨烯层和第二石墨烯层，在第一石墨烯层上彼此分离的第一电极层和第一半导体层， 第二电极层和在第二石墨烯层上彼此分离的第二半导体层，以及在第一和第二半导体层上的输出电极，并且被配置为输出输出信号。 第一半导体层掺杂有比第二半导体层选自n型杂质和p型杂质的不同类型的杂质。

公开(公告)号：US08330150B2

公开(公告)日：2012-12-11

申请号：US12829139

申请日：2010-07-01

申请人： Hyun-Joong Chung ,  Jin-Seong Park ,  Jong-Han Jeong ,  Jae-Kyeong Jeong ,  Yeong-Gon Mo ,  Min-Kyu Kim ,  Tae-Kyung Ahn ,  Hui-Won Yang ,  Kwang-Suk Kim ,  Eun-Hyun Kim ,  Jae-Wook Kang ,  Jae-Soon Im

发明人： Hyun-Joong Chung ,  Jin-Seong Park ,  Jong-Han Jeong ,  Jae-Kyeong Jeong ,  Yeong-Gon Mo ,  Min-Kyu Kim ,  Tae-Kyung Ahn ,  Hui-Won Yang ,  Kwang-Suk Kim ,  Eun-Hyun Kim ,  Jae-Wook Kang ,  Jae-Soon Im

IPC分类号： H01L29/08

CPC分类号： H01L27/3248 ,  H01L27/1225 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/66969 ,  H01L29/7869 ,  H01L51/52 ,  H01L51/5237 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/5346

摘要： An organic light-emitting display device, which may be configured to prevent moisture or oxygen from penetrating the organic light-emitting display device from the outside is disclosed. An organic light-emitting display device, which is easily applied to a large display device and/or may be easily mass produced is further disclosed. Additionally disclosed is a method of manufacturing an organic light-emitting display device. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT. The insulating layer may include, for example, a first insulating layer contacting the active layer; and a second insulating layer formed of a metal oxide and disposed on the first insulating layer.

摘要翻译： 公开了一种有机发光显示装置，其可被配置为防止水分或氧气从外部穿透有机发光显示装置。 进一步公开了易于应用于大型显示​​装置和/或可容易地批量生产的有机发光显示装置。 另外公开了一种制造有机发光显示装置的方法。 有机发光显示装置可以包括例如薄膜晶体管（TFT），其包括栅电极，与栅电极绝缘的有源层，与栅电极绝缘的源电极和漏电极，并与活性层接触和 设置在所述源极和漏极之间的绝缘层和所述有源层; 以及与TFT电连接的有机发光二极管。 绝缘层可以包括例如与活性层接触的第一绝缘层; 以及由金属氧化物形成并设置在第一绝缘层上的第二绝缘层。

公开(公告)号：US08318533B2

公开(公告)日：2012-11-27

申请号：US12662192

申请日：2010-04-05

申请人： Taek Ahn ,  Min-Chul Suh ,  Jae-Bon Koo ,  Jin-Seong Park

发明人： Taek Ahn ,  Min-Chul Suh ,  Jae-Bon Koo ,  Jin-Seong Park

IPC分类号： H01L51/40 ,  H01L21/00 ,  H01L21/44

CPC分类号： B82Y30/00 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/0052 ,  H01L51/0078 ,  H01L51/0516 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/105

摘要： An organic thin film transistor that has good adhesiveness and good contact resistance as well as allows ohmic contact between an organic semiconductor layer and a source electrode and a drain electrode, and its manufacturing method. There is also provided a flat panel display device using the organic thin film transistor. The organic thin film transistor includes a source electrode, a drain electrode, an organic semiconductor layer, a gate insulating layer, and a gate electrode formed on a substrate, and a carrier relay layer including conductive polymer material formed at least between the organic semiconductor layer and the source electrode or the organic semiconductor layer and the drain electrode.

摘要翻译： 具有良好的粘合性和良好的接触电阻以及有机半导体层与源电极和漏电极之间的欧姆接触的有机薄膜晶体管及其制造方法。 还提供了使用有机薄膜晶体管的平板显示装置。 有机薄膜晶体管包括在基板上形成的源电极，漏电极，有机半导体层，栅极绝缘层和栅电极，以及载体中继层，其至少形成在有机半导体层 和源电极或有机半导体层和漏电极。

公开(公告)号：US08292575B2

公开(公告)日：2012-10-23

申请号：US11547858

申请日：2004-08-19

申请人： In Gyu Kim ,  Byung Il Park ,  Ja Hyung Koo ,  Yang Ho Kim ,  Kyeong Wook Heo ,  Si Kyong Sung ,  Dong Hyuk Lee ,  Young Hwan Ko ,  Jun Hyeon Hwang ,  Ho Jin Song ,  Jin Seong Hwang ,  Young Ho Hong ,  Hwan Jong Choi ,  Geun Bae Hwang ,  Chun Su Kang ,  Tae Geun Kim

发明人： In Gyu Kim ,  Byung Il Park ,  Ja Hyung Koo ,  Yang Ho Kim ,  Kyeong Wook Heo ,  Si Kyong Sung ,  Dong Hyuk Lee ,  Young Hwan Ko ,  Jun Hyeon Hwang ,  Ho Jin Song ,  Jin Seong Hwang ,  Young Ho Hong ,  Hwan Jong Choi ,  Geun Bae Hwang ,  Chun Su Kang ,  Tae Geun Kim

IPC分类号： F04D29/44

CPC分类号： H02K7/14 ,  F04D25/064 ,  F04D25/0646 ,  F04D29/668 ,  F24F1/0007 ,  F24F1/0018 ,  F24F1/0022 ,  H02K3/522

摘要： A fan apparatus and an air conditioner employing such a fan apparatus are provided to reduce noise and enhance efficiency. The fan apparatus may be driven by a BLDC motor that stably drives the fan and increases an air flow rate. Heat exchange efficiency of an outdoor unit of a front suction/discharge type air conditioner may be improved by such a fan apparatus driven by such a BLDC motor.

摘要翻译： 提供采用这种风扇装置的风扇装置和空调器以减少噪音并提高效率。 风扇装置可以由稳定地驱动风扇并增加空气流量的BLDC电动机驱动。 通过这样的BLDC电动机驱动的风扇装置，能够提高前排/抽吸式空调的室外机的热交换效率。

公开(公告)号：US08288768B2

公开(公告)日：2012-10-16

申请号：US12690149

申请日：2010-01-20

申请人： Min-Kyu Kim ,  Jin-Seong Park ,  Tae-Kyung Ahn ,  Hyun-Joong Chung

发明人： Min-Kyu Kim ,  Jin-Seong Park ,  Tae-Kyung Ahn ,  Hyun-Joong Chung

IPC分类号： H01L29/12 ,  H01L21/34

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/3262

摘要： A thin film transistor using an oxide semiconductor as an active layer, and its method of manufacture. The thin film transistor includes: a substrate; an active layer formed of an oxide semiconductor; a gate insulating layer formed of a dielectric on the active layer, the dielectric having an etching selectivity of 20 to 100:1 with respect to the oxide semiconductor; a gate electrode formed on the gate insulating layer; an insulating layer formed on the substrate including the gate electrode and having contact holes to expose the active layer; and source and drain electrodes connected to the active layer through the contact holes. Since the source and drain electrodes are not overlapped with the gate electrode, parasitic capacitance between the source and drain electrodes and the gate electrode is minimized. Since the gate insulating layer is formed of dielectric having a high etching selectivity with respect to oxide semiconductor, the active layer is not deteriorated.

摘要翻译： 使用氧化物半导体作为活性层的薄膜晶体管及其制造方法。 薄膜晶体管包括：基板; 由氧化物半导体形成的有源层; 由有源层上的电介质形成的栅极绝缘层，所述电介质具有相对于所述氧化物半导体为20〜100:1的蚀刻选择性; 形成在所述栅极绝缘层上的栅电极; 绝缘层，形成在包括所述栅电极的所述基板上，并具有露出所述有源层的接触孔; 并且源极和漏极通过接触孔连接到有源层。 由于源极和漏极不与栅电极重叠，所以源电极和漏极之间的寄生电容和栅电极最小化。 由于栅极绝缘层由相对于氧化物半导体具有高蚀刻选择性的电介质形成，所以有源层不会劣化。