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公开(公告)号：US06353244B1
公开(公告)日：2002-03-05
申请号：US08908281
申请日：1997-08-07
IPC分类号： H01L2701
CPC分类号： H01L27/1203 , G02F1/13454
摘要： A TFT having a high threshold voltage is connected to the source electrode of each TFT that constitutes a CMOS circuit. In another aspect, pixel thin-film transistors are constructed such that a thin-film transistor more distant from a gate line drive circuit has a lower threshold voltage. In a further aspect, a control film that is removable in a later step is formed on the surface of the channel forming region of a TFT, and doping is performed from above the control film.
摘要翻译： 具有高阈值电压的TFT连接到构成CMOS电路的每个TFT的源电极。 在另一方面，像素薄膜晶体管被构造成使得离栅极线驱动电路更远的薄膜晶体管具有较低的阈值电压。 在另一方面，在TFT的沟道形成区域的表面上形成可在后续步骤中移除的控制膜，并且从控制膜的上方进行掺杂。
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72.发明授权Method of fabrication of a crystalline silicon thin film semiconductor with a thin channel region 失效具有薄沟道区域的晶体硅薄膜半导体的制造方法公开(公告)号：US06337232B1
公开(公告)日：2002-01-08
申请号：US09325572
申请日：1999-06-04
IPC分类号： H01L21265
CPC分类号： H01L21/02672 , C30B1/023 , C30B29/06 , H01L21/02532 , H01L21/02686 , H01L21/2022 , H01L27/1233 , H01L29/0657 , H01L29/66757 , H01L29/78675 , H01L29/78696
摘要： A method for forming a semiconductor device is disclosed. A semiconductor film comprising silicon is formed on a substrate. The semiconductor film is crystallized. The crystallized semiconductor film is patterned into a marker part for aligning a mask and an insular semiconductor part at the same time. A part of the semiconductor film to become a channel formation region is thinned to a thickness 300 Å or less.
摘要翻译： 公开了一种用于形成半导体器件的方法。 在基板上形成包含硅的半导体膜。 半导体膜结晶。 将结晶的半导体膜图案化成用于同时对准掩模和岛状半导体部件的标记部件。 成为沟道形成区域的半导体膜的一部分变薄至300以下。
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73.发明授权Method of producing a semiconductor device with overlapped scanned linear lasers 失效用重叠扫描线性激光器制造半导体器件的方法公开(公告)号：US06242292B1
公开(公告)日：2001-06-05
申请号：US08572104
申请日：1995-12-14
IPC分类号： H01L2184
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/02691 , H01L21/2026 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/66765 , H01L29/78696
摘要： In producing a semiconductor device by annealing with laser light irradiation, while a linear laser light is scanned in a direction perpendicular to a line, the annealing is performed for a semiconductor material. In this state, since an anneal effect in a beam lateral direction corresponding to a line direction is 2 times or more different than that in the scanning direction, a plurality of semiconductor elements are formed along a line direction in which the linear laser light is irradiated. Also, a line direction connecting the source and drain region of a thin film transistor is aligned to the line direction of the linear laser light.
摘要翻译： 在通过激光照射进行退火来制造半导体器件的同时，在垂直于线的方向上扫描线性激光，对半导体材料进行退火。 在这种状态下，由于在与线方向对应的光束横向的退火效应是与扫描方向相反的2倍以上的退火效应，因此沿着照射线状激光的线方向形成多个半导体元件 。 而且，连接薄膜晶体管的源极和漏极区域的线方向与线性激光的线方向对准。
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公开(公告)号：US06215595B1
公开(公告)日：2001-04-10
申请号：US09583450
申请日：2000-05-30
IPC分类号： G02B2710
CPC分类号： G02B19/0057 , B23K26/0613 , B23K26/067 , B23K26/0738 , G02B19/0014 , G02B19/0095 , G02B27/09 , G02B27/0905 , G02B27/0927 , G02B27/0961 , G02B27/0966 , H01L21/02532 , H01L21/02672 , H01L21/02678 , H01L21/02686 , H01L27/1285 , H01L27/1296
摘要： There is provided an improvement on homogeneity of annealing performed utilizing radiation of a laser beam on a silicon film having a large area. In a configuration wherein a linear laser beam is applied to a surface to be irradiated, optimization is carried out on the width and number of cylindrical lenses forming homogenizers 103 and 104 for controlling the distribution of radiation energy density in the longitudinal direction of the linear beam. For example, the width of the cylindrical lenses forming the homogenizers 103 and 104 is set in the range from 0.1 mm to 5 mm, and the number of the lenses is chosen such that one lens is provided for every 5 mm-15 mm along the length of the linear laser beam in the longitudinal direction thereof. This makes it possible to improve homogeneity of the radiation energy density of the linear laser in the longitudinal direction thereof.
摘要翻译： 通过激光束的辐射对具有大面积的硅膜进行的退火的均匀性提供了改进。 在将线性激光束施加到被照射面的构造中，对形成均匀器103,104的圆柱透镜的宽度和数量进行优化，以控制线束的纵向辐射能量密度分布 。 例如，形成均化器103和104的圆柱形透镜的宽度设定在0.1mm至5mm的范围内，并且选择透镜的数量使得沿着每5mm-15mm设置一个透镜 线性激光束的长度方向的长度。 这使得可以提高线性激光器在其纵向方向上的辐射能量密度的均匀性。
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公开(公告)号：US06204099B1
公开(公告)日：2001-03-20
申请号：US09390904
申请日：1999-09-07
申请人： Naoto Kusumoto , Shunpei Yamazaki
发明人： Naoto Kusumoto , Shunpei Yamazaki
IPC分类号： H01L2100
CPC分类号： H01L29/78696 , H01L21/02532 , H01L21/02658 , H01L21/02691 , H01L21/2022 , H01L27/1277 , H01L27/1281 , H01L27/1285 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： An amorphous semiconductor film is etched so that a width of a narrowest portion thereof is 100 &mgr;m or less, thereby forming island semiconductor regions. By irradiating an intense light such as a laser into the island semiconductor regions, photo-annealing is performed to crystallize it. Then, of end portions (peripheral portions) of the island semiconductor regions, at least a portion used to form a channel of a thin film transistor (TFT), or a portion that a gate electrode crosses is etched, so that a region that the distortion is accumulated is removed. By using such semiconductor regions, a TFT is produced.
摘要翻译： 蚀刻非晶半导体膜，使其最窄部分的宽度为100μm以下，从而形成岛状半导体区域。 通过将诸如激光的强光照射到岛状半导体区域中，进行光退火以使其结晶。 然后，在岛状半导体区域的端部（周边部分）中，至少一部分用于形成薄膜晶体管（TFT）的通道的部分，或栅电极交叉的部分被蚀刻，使得 失真累积被去除。 通过使用这样的半导体区域，制造TFT。
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76.发明授权Semiconductor device having channel refractive index in first and second directions 失效半导体器件在第一和第二方向上具有沟道折射率
公开(公告)号：US6054739A
公开(公告)日：2000-04-25
申请号：US10486
申请日：1998-01-21
IPC分类号： H01L21/02 , H01L21/20 , H01L21/268 , H01L21/336 , H01L21/77 , H01L27/12 , H01L29/04 , H01L29/786 , H01L21/26
CPC分类号： H01L29/78696 , H01L21/2026 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/66765
摘要： In producing a semiconductor device by annealing with laser light irradiation, while a linear laser light is scanned in a direction perpendicular to a line, the annealing is performed for a semiconductor material. In this state, since an anneal effect in a beam lateral direction corresponding to a line direction is 2 times or more different than that in the scanning direction, a plurality of semiconductor elements are formed along a line direction in which the linear laser light is irradiated. Also, a line direction connecting the source and drain region of a thin film transistor is aligned to the line direction of the linear laser light.
摘要翻译： 在通过激光照射进行退火来制造半导体器件的同时，在垂直于线的方向上扫描线性激光，对半导体材料进行退火。 在这种状态下，由于在与线方向对应的光束横向的退火效应是与扫描方向相反的2倍以上的退火效应，因此沿着照射线状激光的线方向形成多个半导体元件 。 而且，连接薄膜晶体管的源极和漏极区域的线方向与线性激光的线方向对准。
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公开(公告)号：US5956581A
公开(公告)日：1999-09-21
申请号：US616623
申请日：1996-03-15
IPC分类号： H01L21/20 , H01L21/30 , H01L21/336 , H01L21/77 , H01L21/84 , H01L21/324
CPC分类号： H01L27/1214 , H01L21/3003 , H01L21/2026 , H01L29/66765 , Y10S438/908
摘要： A method of manufacturing a semiconductor device, comprises the steps of: forming an amorphous silicon film on a substrate having an insulating surface; processing said amorphous silicon film by plasma of a gas that mainly contains hydrogen or helium; and giving an energy to said amorphous silicon film.
摘要翻译： 一种制造半导体器件的方法，包括以下步骤：在具有绝缘表面的衬底上形成非晶硅膜; 通过主要含有氢或氦的气体的等离子体处理所述非晶硅膜; 并向所述非晶硅膜提供能量。
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公开(公告)号：US5953597A
公开(公告)日：1999-09-14
申请号：US604547
申请日：1996-02-21
申请人： Naoto Kusumoto , Shunpei Yamazaki
发明人： Naoto Kusumoto , Shunpei Yamazaki
IPC分类号： H01L21/20 , H01L21/335 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/01 , H01L27/12 , H01L29/04 , H01L29/786 , H01L31/0392 , H01L21/00
CPC分类号： H01L29/78696 , H01L27/1277 , H01L27/1281 , H01L27/1285 , H01L29/04 , H01L29/66757 , H01L29/78675 , H01L21/2022
摘要： An amorphous semiconductor film is etched so that a width of a narrowest portion thereof is 100 .mu.m or less, thereby forming island semiconductor regions. By irradiating an intense light such as a laser into the island semiconductor regions, photo-annealing is performed to crystallize it. Then, of end portions (peripheral portions) of the island semiconductor regions, at least a portion used to form a channel of a thin film transistor (TFT), or a portion that a gate electrode crosses is etched, so that a region that the distortion is accumulated is removed. By using such semiconductor regions, a TFT is produced.
摘要翻译： 蚀刻非晶半导体膜，使其最窄部分的宽度为100μm以下，由此形成岛状半导体区域。 通过将诸如激光的强光照射到岛状半导体区域中，进行光退火以使其结晶。 然后，在岛状半导体区域的端部（周边部分）中，至少一部分用于形成薄膜晶体管（TFT）的通道的部分，或栅电极交叉的部分被蚀刻，使得 失真累积被去除。 通过使用这样的半导体区域，制造TFT。
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公开(公告)号：US5753542A
公开(公告)日：1998-05-19
申请号：US396780
申请日：1995-03-01
IPC分类号： H01L21/20 , H01L31/20 , H01L21/268
CPC分类号： H01L21/2026 , H01L31/208 , Y02E10/50 , Y02P70/521 , Y10T29/41
摘要： A semiconductor material and a method for forming the same, said semiconductor material having produced by a process comprising melting a noncrystal semiconductor film containing therein carbon, nitrogen, and oxygen each at a concentration of 5.times.10.sup.19 atoms.cm.sup.-3 or lower, preferably 1.times.10.sup.19 atoms.cm.sup.-3 or lower, by irradiating a laser beam or a high intensity light equivalent to a laser beam to said noncrystal semiconductor film, and then recrystallizing the thus molten amorphous silicon film. The present invention provides thin film semiconductors having high mobility at an excellent reproducibility, said semiconductor materials being useful for fabricating thin film semiconductor devices such as thin film transistors improved in device characteristics.
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80.发明授权Thin film transistor having crystalline semiconductor layer obtained by irradiation 失效具有通过照射获得的晶体半导体层的薄膜晶体管
公开(公告)号：US5656825A
公开(公告)日：1997-08-12
申请号：US487166
申请日：1995-06-07
IPC分类号： H01L21/20 , C30B1/02 , H01L21/02 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/78 , H01L29/786 , H01L29/76 , H01L27/01
CPC分类号： H01L29/78696 , C30B1/023 , C30B29/06 , H01L27/12 , H01L27/1233 , H01L29/66757 , H01L29/78621 , H01L29/78675
摘要： An amorphous semiconductor film having a thickness of 400.ANG. or more is formed on an insulating surface and is wholly or selectively etched to form a region having a thickness 300.ANG. or less. This is used as a channel-forming region in a TFT.
摘要翻译： 在绝缘表面上形成厚度为400或更大的非晶半导体膜，并且完全或选择性地蚀刻以形成厚度为300或更小的区域。 这被用作TFT中的沟道形成区域。
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