公开(公告)号：US10355086B2

公开(公告)日：2019-07-16

申请号：US15181843

申请日：2016-06-14

Applicant: International Business Machines Corporation ,  GlobalFoundries, Inc. ,  STMicroelectronics, Inc.

Inventor： Xiuyu Cai ,  Qing Liu ,  Kejia Wang ,  Ruilong Xie ,  Chun-Chen Yeh

IPC: H01L21/84 ,  H01L29/10 ,  H01L29/66 ,  H01L21/306 ,  H01L29/20 ,  H01L29/417 ,  H01L29/78

Abstract: A semiconductor device includes a fin patterned in a substrate; a gate disposed over and substantially perpendicular to the fin; a pair of epitaxial contacts including a III-V material over the fin and on opposing sides of the gate; and a channel region between the pair of epitaxial contacts under the gate comprising an undoped III-V material between doped III-V materials, the doped III-V materials including a dopant in an amount in a range from about 1e18 to about 1e20 atoms/cm3 and contacting the epitaxial contacts.

公开(公告)号：US20190213348A1

公开(公告)日：2019-07-11

申请号：US16356344

申请日：2019-03-18

Applicant: STMicroelectronics, Inc. ,  STMicroelectroincs (Research & Development) Limited

Inventor： Xiaoyong Yang ,  Rui Xiao ,  Duncan Hall

IPC: G06F21/62 ,  G01S17/88 ,  G06K9/00 ,  G01S7/486 ,  G01S7/484 ,  G06F21/32 ,  G01S17/10

CPC classification number: G06F21/6218 ,  G01S7/484 ,  G01S7/4861 ,  G01S7/4863 ,  G01S7/4865 ,  G01S7/497 ,  G01S17/10 ,  G01S17/88 ,  G06F21/32 ,  G06K9/00201 ,  G06K9/00255 ,  G06K9/00268 ,  G06K9/00597

Abstract: An electronic device includes a time-of-flight sensor configured to sense a distance between the electronic device and at least one object proximate the electronic device. Processing circuitry is coupled to the time-of-flight sensor and controls access to the electronic device based on the sensed distance. The electronic device may include a digital camera that the processing circuitry controls to perform facial or iris recognition utilizing the sensed distance from the time-of-flight sensor.

公开(公告)号：US20190212813A1

公开(公告)日：2019-07-11

申请号：US16101131

申请日：2018-08-10

Applicant: STMICROELECTRONICS, INC.

Inventor： Xiaoyong YANG ,  Rui XIAO

IPC: G06F3/01 ,  G02B27/01 ,  G02B27/00

CPC classification number: G06F3/012 ,  G02B27/0093 ,  G02B27/0172 ,  G02B2027/0138 ,  G02B2027/014

Abstract: The present disclosure is directed to a system and method of determining a movement of a user's head with a ranging sensor. The ranging sensor transmits a ranging signal that is reflected off of a user's shoulder and received back at the ranging sensor. The received ranging signal can be used to determine distance between the user's head and the user's shoulder or to determine the reflectivity of the user's shoulder. With the distance or the reflectivity, a processor can be used to determine movement of the user's head. Furthermore, a multiple zone ranging sensor or multiple ranging sensors can be used to detect the user's shoulder in different spatial zones.

公开(公告)号：US20190206868A1

公开(公告)日：2019-07-04

申请号：US16294117

申请日：2019-03-06

Applicant: International Business Machines Corporation ,  GlobalFoundries, Inc. ,  STMicroelectronics, Inc.

Inventor： Xiuyu Cai ,  Qing Liu ,  Ruilong Xie ,  Chun-Chen Yeh

IPC: H01L27/092 ,  H01L29/06 ,  H01L29/16 ,  H01L21/8238 ,  H01L21/033 ,  H01L21/308 ,  H01L29/78 ,  H01L29/165 ,  H01L29/10 ,  H01L27/12 ,  H01L21/84

CPC classification number: H01L27/0924 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/845 ,  H01L27/0922 ,  H01L27/1211 ,  H01L29/0684 ,  H01L29/1054 ,  H01L29/16 ,  H01L29/165 ,  H01L29/7849

Abstract: A semiconductor substrate includes a bulk substrate layer that extends along a first axis to define a width and a second axis perpendicular to the first axis to define a height. A plurality of hetero semiconductor fins includes an epitaxial material formed on a first region of the bulk substrate layer. A plurality of non-hetero semiconductor fins is formed on a second region of the bulk substrate layer different from the first region. The non-hetero semiconductor fins are integrally formed from the bulk substrate layer such that the material of the non-hetero semiconductor fins is different from the epitaxial material.

公开(公告)号：US20190196101A1

公开(公告)日：2019-06-27

申请号：US16292047

申请日：2019-03-04

Applicant: STMicroelectronics, Inc.

Inventor： John H. Zhang

IPC: G02B6/132 ,  G02B6/136 ,  H01L23/522 ,  G02B6/122 ,  H01L21/768 ,  G02B6/13 ,  H01L21/66

CPC classification number: G02B6/132 ,  G02B6/122 ,  G02B6/1225 ,  G02B6/13 ,  G02B6/136 ,  G02B2006/121 ,  H01L21/76802 ,  H01L21/76879 ,  H01L21/76883 ,  H01L22/12 ,  H01L22/14 ,  H01L23/522 ,  H01L23/53209 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A sequence of processing steps presented herein is used to embed an optical signal path within an array of nanowires, using only one lithography step. Using the techniques disclosed, it is not necessary to mask electrical features while forming optical features, and vice versa. Instead, optical and electrical signal paths can be created substantially simultaneously in the same masking cycle. This is made possible by a disparity in the widths of the respective features, the optical signal paths being significantly wider than the electrical ones. Using a damascene process, the structures of disparate widths are plated with metal that over-fills narrow trenches and under-fills a wide trench. An optical cladding material can then be deposited into the trench so as to surround an optical core for light transmission.

公开(公告)号：US20190189802A1

公开(公告)日：2019-06-20

申请号：US16212632

申请日：2018-12-06

Applicant: STMICROELECTRONICS, INC.

Inventor： Pierre Morin ,  Nicolas Loubet

IPC: H01L29/78 ,  H01L29/165 ,  H01L29/66 ,  H01L27/088

CPC classification number: H01L29/7848 ,  H01L27/0886 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/785

Abstract: A semiconductor device may include a substrate, a fin above the substrate and having a channel region therein, and source and drain regions adjacent the channel region to generate shear and normal strain on the channel region. A semiconductor device may include a substrate, a fin above the substrate and having a channel region therein, source and drain regions adjacent the channel region, and a gate over the channel region. The fin may be canted with respect to the source and drain regions to generate shear and normal strain on the channel region.

公开(公告)号：US20190186916A1

公开(公告)日：2019-06-20

申请号：US16284448

申请日：2019-02-25

Applicant: STMicroelectronics, Inc.

Inventor： Mahesh CHOWDHARY ,  Sankalp DAYAL

IPC: G01C19/32 ,  G01C19/5776

Abstract: A sensor chip is mounted on a PCB and electrically connected to a SOC mounted on the PCB via at least one conductive trace. The sensor chip includes configuration registers storing and outputting configuration data, and a PLD receiving digital data. The PLD performs an extraction of features of the digital data in accordance with the configuration data, and the configuration data includes changeable parameters of the extraction. A classification unit processes the extracted features of the digital data so as to generate a context of an electronic device into which the sensor chip is incorporated relative to its surroundings, the processing being performed in using a processing technique operating in accordance with the configuration data. The configuration data also includes changeable parameters of the processing technique. The classification unit outputs the context to data registers for storage.

公开(公告)号：US10319647B2

公开(公告)日：2019-06-11

申请号：US15890001

申请日：2018-02-06

Applicant: STMicroelectronics, Inc.

Inventor： Qing Liu ,  John H. Zhang

IPC: H01L27/12 ,  H01L21/84 ,  H01L27/02 ,  H01L29/06 ,  H01L29/10 ,  H01L29/66 ,  H01L21/265 ,  H01L21/266 ,  H01L21/308 ,  H01L29/161 ,  H01L29/423

Abstract: An analog integrated circuit is disclosed in which short channel transistors are stacked on top of long channel transistors, vertically separated by an insulating layer. With such a design, it is possible to produce a high density, high power, and high performance analog integrated circuit chip including both short and long channel devices that are spaced far enough apart from one another to avoid crosstalk. In one embodiment, the transistors are FinFETs and the long channel devices are multi-gate FinFETs. In one embodiment, single and dual damascene devices are combined in a multi-layer integrated circuit cell. The cell may contain various combinations and configurations of the short and long-channel devices. A high density cell can be made by simply shrinking the dimensions of the cells and replicating two or more cells in the same size footprint as the original cell.

公开(公告)号：US20190171819A1

公开(公告)日：2019-06-06

申请号：US16175699

申请日：2018-10-30

Applicant: STMicroelectronics, Inc.

Inventor： Maurizio Gentili ,  Massimo Panzica

IPC: G06F21/57 ,  G06F12/14

Abstract: Electronic computing devices provide a method to update firmware. The method includes receiving a firmware image at an electronic device, the electronic device having a processor and a memory arranged to store instructions executed by the processor. In the electronic device, a unique device identifier is retrieved and a random number is generated. The generated random number is securely stored. The random number and a representation of the unique device identifier are computationally combined to create a device-binding value, and an address-offset is generated from the device-binding value. The firmware image is stored in the memory at the address-offset.

公开(公告)号：US10304815B2

公开(公告)日：2019-05-28

申请号：US15802541

申请日：2017-11-03

Applicant: International Business Machines Corporation ,  STMicroelectronics, Inc.

Inventor： Lawrence A. Clevenger ,  Carl J. Radens ,  Yiheng Xu ,  John H. Zhang

IPC: H01L23/02 ,  H01L23/48 ,  H01L23/52 ,  H01L25/18 ,  H01L25/065 ,  H01L23/538 ,  H01L23/31 ,  H01L23/498 ,  H01L25/00 ,  H01L21/48 ,  H01L23/13 ,  H01L23/15

Abstract: Self-aligned three dimensional vertically stacked chip stacks and processes for forming the same generally include two or more vertically stacked chips supported by a scaffolding structure, the scaffolding structure defined by a first scaffolding trench and at least one additional scaffolding trench, the first scaffolding trench comprising a bottom surface having a width and a sidewall having a height extending from the bottom surface to define a lowermost trench in a scaffolding layer, the at least one additional scaffolding trench overlaying the first scaffolding trench having a sidewall having a height and a width, wherein the width of the at least one scaffolding trench is greater than the first scaffolding trench width to define a first stair between the first scaffolding trench and the at least one additional trench; a first chip secured to the first scaffolding trench having a height less than the first scaffolding trench sidewall height; and at least one additional chip secured to and supported by the first stair, wherein the at least one additional chip is vertically spaced apart from the first chip.