公开(公告)号：US20240333318A1

公开(公告)日：2024-10-03

申请号：US18612222

申请日：2024-03-21

Applicant: STMicroelectronics International N.V.

Inventor： Nunzio Spina ,  Giuseppe Palmisano

IPC: H04B1/00

CPC classification number: H04B1/006 ,  H04B1/0078

Abstract: A circuit for transmitting/receiving signals through a galvanic isolation comprises an antenna transmitting/receiving radiofrequency signals modulated over a radiofrequency carrier, a transmitter receiving an input data signal, and a receiver delivering an output data signal. First and second capacitive circuitry are arranged between the antenna and the receiver and the transmitter, respectively. First and second switching circuitry couple the first and second capacitive circuitry to the antenna in an inductive-capacitive network, alternately: in a transmission mode, the first switching circuitry couples the first capacitive circuitry to ground with the receiver disabled, and the second switching circuitry decouples the second capacitive circuitry from the inductive-capacitive network with the transmitter enabled, and in a reception mode, the first switching circuitry decouples the first capacitive circuitry from ground, with the receiver enabled, and the second switching circuitry couples the second capacitive circuitry to the inductive-capacitive network with the transmitter disabled.

公开(公告)号：US20240333302A1

公开(公告)日：2024-10-03

申请号：US18127848

申请日：2023-03-29

Applicant: STMicroelectronics International N.V. ,  Universita' Di Pavia ,  Politecnico Di Torino

Inventor： Francesco STILGENBAUER ,  Edoardo BOTTI ,  Piero MALCOVATI ,  Paolo Stefano CROVETTI ,  Edoardo BONIZZONI ,  Matteo DE FERRARI

IPC: H03M3/00

CPC classification number: H03M3/422 ,  H03M3/436

Abstract: A delta-sigma modulator includes a loop filter circuit having a first input that receives an input signal and a second input that receives a feedback signal. The loop filter circuit generates a filtered signal. A quantizer circuit quantizes the integrated signal to generate an output signal. An anti-windup circuit detects instances where the integrated signal is outside an input signal input of the quantizer circuit and in response thereto generates a dead zone signal having a magnitude and sign corresponding to a difference between the filtered signal and the input signal range. The feedback signal is a sum of the output signal and the dead zone signal.

公开(公告)号：US20240333293A1

公开(公告)日：2024-10-03

申请号：US18585766

申请日：2024-02-23

Applicant: STMicroelectronics International N.V.

Inventor： François Tailliet ,  Marc Battista

IPC: H03M1/12

CPC classification number: H03M1/12

Abstract: A method for controlling an analog-digital converter comprising first and second oscillators, and first and second elements, the method comprising a first step during which the first and second oscillators generate frequencies depending on an electrical characteristic of the first element and of the second element, respectively, and a second step during which the first and second oscillators generate frequencies depending on the electrical characteristic of the second element and of the first element, respectively.

公开(公告)号：US20240333281A1

公开(公告)日：2024-10-03

申请号：US18598920

申请日：2024-03-07

Applicant: STMicroelectronics International N.V.

Inventor： Manoj Kumar TIWARI ,  Sandeep KAUSHIK ,  Zia PARVEEN

IPC: H03K17/56

CPC classification number: H03K17/56

Abstract: Provided is a circuit that sets a voltage of a failsafe node. The circuit includes a first voltage setting transistor configured to operate in a conductive state to set a voltage of the failsafe node to a supply voltage of a supply voltage node. The circuit includes first and second control transistors configured to control the first voltage setting transistor to operate in the conductive state in response to both the supply voltage and a pad node voltage of a pad node corresponding to logical one and control the first voltage setting transistor to operate in a nonconductive state in response to one of the supply voltage or the pad node voltage corresponding to the logical one and another one of the supply voltage or the pad node voltage corresponding to logical zero.

公开(公告)号：US20240332955A1

公开(公告)日：2024-10-03

申请号：US18606918

申请日：2024-03-15

Applicant: STMICROELECTRONICS INTERNATIONAL N.V.

Inventor： Jean-Michel SIMONNET ,  Romain PICHON

IPC: H02H9/04 ,  H02H1/00

CPC classification number: H02H9/04 ,  H02H1/0007

Abstract: The present description concerns a circuit of protection against overvoltages appearing during a protection against overcurrents comprising: a first diode and a second diode having their cathodes coupled to a first node; a first transient voltage suppressor diode having its cathode coupled to a second node and having its anode coupled to the anode of the first diode; a thyristor having its cathode coupled to the anode of the second diode, having its anode coupled to the second node, and having its gate coupled to the anode of the first diode; and a switch having a first terminal coupled to the first node.

公开(公告)号：US20240332413A1

公开(公告)日：2024-10-03

申请号：US18612646

申请日：2024-03-21

Applicant: STMicroelectronics International N.V.

Inventor： Ferdinando IUCOLANO ,  Alessandro CHINI ,  Maria Eloisa CASTAGNA ,  Aurore CONSTANT ,  Cristina TRINGALI

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/7787 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66462

Abstract: The HEMT device has a body including a heterostructure configured to generate a 2-dimensional charge-carrier gas; and a gate structure which extends on a top surface of the body and is biasable to electrically control the 2-dimensional charge-carrier gas. The gate structure has a channel modulating region of semiconductor material; a functional region of semiconductor material; and a gate contact region of conductive material. The functional region and the gate contact region extend on a top surface of the channel modulating region and the gate contact region is arranged laterally with respect to the functional region. The channel modulating region has a different conductivity type with respect to the functional region.

公开(公告)号：US20240332250A1

公开(公告)日：2024-10-03

申请号：US18615039

申请日：2024-03-25

Applicant: STMicroelectronics International N.V.

Inventor： Antonio BELLIZZI ,  Guendalina CATALANO

IPC: H01L23/00 ,  H01L23/495

CPC classification number: H01L24/97 ,  H01L23/49548 ,  H01L24/27 ,  H01L24/29 ,  H01L24/98 ,  H01L2224/2746 ,  H01L2224/29111 ,  H01L2224/97 ,  H01L2224/98 ,  H01L2924/301

Abstract: Semiconductor chips are arranged on a first surface of a common electrically conductive substrate having an opposite second surface. The substrate includes adjacent substrate portions having mutually facing sides with sacrificial connecting bars extending between adjacent mutually facing sides. A solderable metallic layer is present on the second surface extending over the sacrificial connecting bars. The solderable metallic layer is selectively removed (by laser ablation or etching, for example) from at least part of the length the sacrificial connecting bars. The common electrically conductive substrate is then cut along the length of the elongate sacrificial connecting bars to provide singulated individual semiconductor devices. Undesired formation of electrically conductive filaments or flakes bridging parts of the substrate intended to be mutually isolated is countered.

公开(公告)号：US20240332162A1

公开(公告)日：2024-10-03

申请号：US18616696

申请日：2024-03-26

Applicant: STMicroelectronics International N.V.

Inventor： William THIES ,  Gilles GASIOT ,  Andrea PAGANINI ,  Jerome DEROO ,  Matteo REPOSSI

IPC: H01L23/522 ,  H03H7/01

CPC classification number: H01L23/5223 ,  H01L23/5225 ,  H03H7/0115

Abstract: A device includes a substrate and an interconnection network on the substrate. The interconnection network includes at least a first level, at least a second level and a third level. The first level includes one or more capacitors. The third level includes a metallic shield. The second level is positioned between the first level and the substrate. The capacitors of the first level are entirely separated from the substrate by the shield. The second level is located between the first and third levels.

公开(公告)号：US20240332143A1

公开(公告)日：2024-10-03

申请号：US18429009

申请日：2024-01-31

Applicant: STMicroelectronics International N.V.

Inventor： Jing-En LUAN

IPC: H01L23/495 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/36

CPC classification number: H01L23/49558 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/36 ,  H01L23/49513 ,  H01L23/49517 ,  H01L24/83 ,  H01L24/32 ,  H01L2224/32245 ,  H01L2224/83

Abstract: A hybrid QFN package includes an encapsulant body that encapsulates a lead frame and integrated circuit (IC) device where the lead frame includes a die pad and vertically offset leads. Back sides of the die pad and encapsulant body are coplanar at first surface. Front sides of the leads, the IC device and the encapsulant body are substantially coplanar at a second surface. An insulating layer covers the second surface except at a portion of the leads located at the peripheral edge of the encapsulating body. Vias extend through the insulating layer to the leads and IC device. Wiring lines on the insulating layer interconnect the vias. A passivation layer covers the wiring lines and vias.

公开(公告)号：US20240332106A1

公开(公告)日：2024-10-03

申请号：US18614989

申请日：2024-03-25

Applicant: STMicroelectronics International N.V.

Inventor： Paolo CREMA ,  Alberto ARRIGONI

IPC: H01L23/31 ,  H01L21/56 ,  H01L23/495

CPC classification number: H01L23/3142 ,  H01L21/56 ,  H01L23/49503

Abstract: A semiconductor die is arranged at a first surface of a die pad. The die pad has a peripheral edge and a second surface opposite to the first surface that includes a first region and a second region surrounding the first region. The second region extends to the peripheral edge of the die pad from a border line at the first region and includes a recessed formation extending continuously along the border line. An insulating encapsulation is molded onto the die pad with the first region of the second surface left uncovered and the second region of the second surface of the die pad being covered by the insulating encapsulation that fills the recessed formation. The recessed formation has a variable recess depth between the border line and the peripheral edge of the die pad to provide an extended length delamination path from the border line to the semiconductor die.