公开(公告)号：US08405161B2

公开(公告)日：2013-03-26

申请号：US11877308

申请日：2007-10-23

Applicant: Kyung-bae Park ,  Jang-yeon Kwon ,  Sang-yoon Lee ,  Ji-sim Jung

Inventor： Kyung-bae Park ,  Jang-yeon Kwon ,  Sang-yoon Lee ,  Ji-sim Jung

IPC: H01L27/088

CPC classification number: H01L27/1251 ,  H01L27/1214 ,  H01L27/1229 ,  H01L27/3244 ,  H01L29/04 ,  H01L29/78696

Abstract: Provided are a driving device for a unit pixel of an organic light emitting display having an improved structure and a method of manufacturing the same.

Abstract translation: 提供了一种具有改进结构的有机发光显示器的单位像素的驱动装置及其制造方法。

公开(公告)号：US20130043475A1

公开(公告)日：2013-02-21

申请号：US13489888

申请日：2012-06-06

Applicant: Hyun-suk Kim ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jong-baek Seon ,  Kyoung-seok Son ,  Won-mook Choi ,  Joon-seok Park ,  Mi-jeong Song

Inventor： Hyun-suk Kim ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jong-baek Seon ,  Kyoung-seok Son ,  Won-mook Choi ,  Joon-seok Park ,  Mi-jeong Song

IPC: H01L29/786 ,  H01L29/772 ,  B82Y99/00

CPC classification number: H01L29/78633 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/7869

Abstract: A transistor may include a light-blocking layer that blocks light incident on a channel layer. The light-blocking layer may include a carbon-based material. The carbon-based material may include graphene oxide, graphite oxide, graphene or carbon nanotube (CNT). The light-blocking layer may be between a gate and at least one of the channel layer, a source and a drain.

Abstract translation: 晶体管可以包括阻挡入射在沟道层上的光的遮光层。 遮光层可以包括碳基材料。 碳基材料可以包括氧化石墨烯，氧化石墨，石墨烯或碳纳米管（CNT）。 遮光层可以在栅极和沟道层，源极和漏极中的至少一个之间。

公开(公告)号：US20130003066A1

公开(公告)日：2013-01-03

申请号：US13533353

申请日：2012-06-26

Applicant: Seung-hoon HAN ,  Wan-joo Maeng ,  Sang-yoon Lee

Inventor： Seung-hoon HAN ,  Wan-joo Maeng ,  Sang-yoon Lee

IPC: G02F1/33 ,  G01N21/17 ,  G02B27/22 ,  G03H1/08 ,  B82B1/00 ,  B82Y20/00

CPC classification number: G02F1/33 ,  G01N29/2418 ,  G01N29/34 ,  G02F1/0072 ,  G02F2202/32 ,  G02F2203/10 ,  G03H1/2294 ,  G03H2001/0224 ,  G03H2225/21

Abstract: An acousto-optic device includes an acousto-optic medium having a multi-layer nanostructure; and a sonic wave generator configured to apply sonic waves to the acousto-optic medium having the multi-layer nanostructure. The acousto-optic medium having the multi-layer nanostructure includes a second layer formed of at least two materials that have different dielectric constants and alternate with each other; and a first layer disposed on a first surface of the second layer and formed of a first material, and/or a third layer disposed on a second surface of the second layer and formed of a fourth material.

Abstract translation: 声光装置包括具有多层纳米结构的声光介质; 以及声波发生器，被配置为将声波施加到具有多层纳米结构的声光介质。 具有多层纳米结构的声光介质包括由至少两种具有不同介电常数且彼此交替的材料形成的第二层; 以及设置在第二层的第一表面上并由第一材料形成的第一层和/或设置在第二层的第二表面上并由第四材料形成的第三层。

公开(公告)号：US20120280340A1

公开(公告)日：2012-11-08

申请号：US13462472

申请日：2012-05-02

Applicant: Sun-kook Kim ,  Woong Choi ,  Seung-hoon Han ,  Yong-wan Jin ,  Sang-yoon Lee

Inventor： Sun-kook Kim ,  Woong Choi ,  Seung-hoon Han ,  Yong-wan Jin ,  Sang-yoon Lee

IPC: H01L29/82 ,  H01L21/8246

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G11C11/221 ,  H01L21/31144 ,  H01L27/10 ,  H01L27/101 ,  H01L27/11507 ,  H01L27/222 ,  H01L28/55

Abstract: A memory device includes a lower electrode formed on a substrate, and an information storage unit formed on the lower electrode. The information storage unit includes a plurality of information storage layers spaced apart from one another. Each of the plurality of information storage layers is an information unit. A method of manufacturing a memory device uses a porous film to form the plurality of information storage layers.

Abstract translation: 存储器件包括形成在衬底上的下电极和形成在下电极上的信息存储单元。 信息存储单元包括彼此间隔开的多个信息存储层。 多个信息存储层中的每一个是信息单元。 存储器件的制造方法使用多孔膜形成多个信息存储层。

公开(公告)号：US08273460B2

公开(公告)日：2012-09-25

申请号：US11783136

申请日：2007-04-06

Applicant: Eun Kyung Lee ,  Joo Young Kim ,  Sang Yoon Lee ,  Jung Seok Hahn

Inventor： Eun Kyung Lee ,  Joo Young Kim ,  Sang Yoon Lee ,  Jung Seok Hahn

IPC: B32B15/04 ,  H01L51/30 ,  C08G65/38

CPC classification number: H01L51/052 ,  H01L51/0541 ,  H01L51/0545 ,  Y10T428/31678

Abstract: Disclosed are a composition comprising an organic insulating polymer in which a photo-reactive functional group showing an increased crosslinking degree is introduced into a side-chain, an organic insulating film comprising the composition, an organic thin film transistor (OTFT) comprising the organic insulating film, an electronic device comprising the organic thin film transistor and methods of fabricating the organic insulating film, the organic thin film transistor and the electronic device. The OTFT comprising the organic insulating film of example embodiments may not show any hysteresis during the driving of the OTFT, and therefore, may exhibit a homogeneous property.

Abstract translation: 公开了一种组合物，其包含其中将具有增加的交联度的光反应性官能团引入侧链的有机绝缘聚合物，包含该组合物的有机绝缘膜，包含有机绝缘体的有机薄膜晶体管（OTFT） 膜，包括有机薄膜晶体管的电子器件和制造有机绝缘膜，有机薄膜晶体管和电子器件的方法。 包含示例性实施例的有机绝缘膜的OTFT在驱动OTFT期间可能不显示任何滞后，因此可以表现出均匀的性质。

公开(公告)号：US20120227872A1

公开(公告)日：2012-09-13

申请号：US13508745

申请日：2010-12-23

Applicant: Dong-Hyun Kim ,  You-Hwan Lee ,  Sang-Yoon Lee ,  Hyung-Keun Cho

Inventor： Dong-Hyun Kim ,  You-Hwan Lee ,  Sang-Yoon Lee ,  Hyung-Keun Cho

IPC: C21D9/52 ,  C22C38/12 ,  C22C38/04 ,  C22C38/02

CPC classification number: C22C38/12 ,  C21D8/065 ,  C21D9/0093 ,  C22C38/02 ,  C22C38/04

Abstract: An ultra-high-strength steel wire rod having excellent resistance to delayed fracture includes, by wt %, 0.7-1.2% C, 0.25-0.5% Si, 0.5-0.8% Mn, 0.02-0.1% V and a balance of Fe and inevitable impurities. The method includes the steps of heating the above steel composition to 1100° C. or lower and hot rolling at a temperature of 900-1000° C., followed by cooling to 600-650° C. at a prescribed rate, followed by cold drawing at a reduction ratio of 60-80%.

Abstract translation: 具有优异的延迟断裂性的超高强度钢线材包括：重量％，0.7-1.2％C，0.25-0.5％Si，0.5-0.8％Mn，0.02-0.1％V，余量为Fe和 不可避免的杂质。 该方法包括以下步骤：将上述钢组合物加热至1100℃以下，在900-1000℃的温度下进行热轧，然后以规定的比例冷却至600-650℃，然后冷却 以60-80％的减速比绘制。

公开(公告)号：US20120146713A1

公开(公告)日：2012-06-14

申请号：US13167299

申请日：2011-06-23

Applicant: Eok-su Kim ,  Sang-yoon Lee ,  Myung-kwan Ryu

Inventor： Eok-su Kim ,  Sang-yoon Lee ,  Myung-kwan Ryu

IPC: H01L29/04 ,  H01L29/786 ,  H03K3/01 ,  H01L21/336

CPC classification number: H01L29/78696 ,  H01L29/41733 ,  H01L29/78648 ,  H01L29/78651 ,  H01L29/78681 ,  H01L29/7869

Abstract: A transistor includes a first active layer having a first channel region and a second active layer having a second channel region. A first gate of the transistor is configured to control electrical characteristics of at least the first active layer and a second gate is configured to control electrical characteristics of at least the second active layer. A source electrode contacts the first and second active layers. A drain electrode also contacts the first and second active layers.

Abstract translation: 晶体管包括具有第一沟道区的第一有源层和具有第二沟道区的第二有源层。 晶体管的第一栅极被配置为控制至少第一有源层的电特性，并且第二栅极被配置为控制至少第二有源层的电特性。 源电极接触第一和第二有源层。 漏电极还接触第一和第二有源层。

公开(公告)号：US20120037283A1

公开(公告)日：2012-02-16

申请号：US13263758

申请日：2010-04-23

Applicant: Dong-Hyun Kim ,  You-Hwan Lee ,  Sang-Yoon Lee ,  Hyung-Keun Cho

Inventor： Dong-Hyun Kim ,  You-Hwan Lee ,  Sang-Yoon Lee ,  Hyung-Keun Cho

IPC: C21D9/52 ,  C22C38/04 ,  C22C38/02 ,  C22C38/00 ,  C22C38/06

CPC classification number: C22C38/12 ,  C22C38/001 ,  C22C38/06 ,  C22C38/14

Abstract: Provided are a high-strength, high-toughness steel wire rod and a method of manufacturing the same. The steel wire rod has a composition including 0.07 wt % to 0.14 wt % of aluminum (Al) and nitrogen (N) wherein Al:N (where Al and N denote wt % of each element) is in a range of 15:1 to 25:1. Since a steel wire rod having sufficient strength and toughness improvement effects can be obtained with a simple alloy component, a steel wire rod capable of allowing processing such as cold forging to be performed without an additional heat treatment may be provided.

Abstract translation: 本发明提供高强度，高韧性钢线材及其制造方法。 钢线材具有含有0.07重量％至0.14重量％的铝（Al）和氮（N）的组成，其中Al：N（其中Al和N表示各元素的重量％）在15:1至 25：1。 由于可以通过简单的合金成分获得具有足够的强度和韧性改善效果的钢丝棒，所以可以提供能够进行诸如冷锻的加工的钢线，而不进行额外的热处理。

公开(公告)号：US08114704B2

公开(公告)日：2012-02-14

申请号：US12379856

申请日：2009-03-03

Applicant: Do Hwan Kim ,  Hyun Sik Moon ,  Byung Wook Yoo ,  Sang Yoon Lee ,  Bang Lin Lee ,  Jeong Il Park ,  Eun Jeong Jeong

Inventor： Do Hwan Kim ,  Hyun Sik Moon ,  Byung Wook Yoo ,  Sang Yoon Lee ,  Bang Lin Lee ,  Jeong Il Park ,  Eun Jeong Jeong

IPC: H01L51/40

CPC classification number: H01L51/0533

Abstract: Disclosed herein are a method for fabricating an organic thin film transistor, including treating the surfaces of a gate insulating layer and source/drain electrodes with a self-assembled monolayer (SAM)-forming compound through a one-pot reaction, and an organic thin film transistor fabricated by the method. According to example embodiments, the surface-treatment of the gate insulating layer and the source/drain electrodes may be performed in a single vessel through a single process.

Abstract translation: 本文公开了一种用于制造有机薄膜晶体管的方法，包括通过一锅反应用自组装单层（SAM）形成化合物处理栅极绝缘层和源极/漏极的表面，以及有机薄膜 通过该方法制造的薄膜晶体管。 根据示例实施例，栅极绝缘层和源极/漏极的表面处理可以通过单个工艺在单个容器中进行。

公开(公告)号：US20110204350A1

公开(公告)日：2011-08-25

申请号：US13067002

申请日：2011-05-02

Applicant: Jung Seok Hahn ,  Eun Kyung Lee ,  Sang Yoon Lee ,  Eun Jeong Jeong ,  Joo Young Kim

Inventor： Jung Seok Hahn ,  Eun Kyung Lee ,  Sang Yoon Lee ,  Eun Jeong Jeong ,  Joo Young Kim

IPC: H01L51/10 ,  C08K5/5455 ,  C08K5/5465

CPC classification number: H01L51/052

Abstract: Disclosed is a composition, an organic insulating film including the same, an organic thin film transistor including the organic insulating film, an electronic device including the organic thin film transistor and methods of fabricating the same. In the composition, an organic polymer material having a carboxyl group and an organic silane material having an electron-donating group are included to thus realize a structure which may further stabilize an unreacted crosslinking material. Thereby, a hysteresis phenomenon may be decreased and transparency may be increased, thus making it possible to assure stability upon exposure to air. Accordingly, the lifetime of the organic thin film transistor may be lengthened.

Abstract translation: 公开了组合物，包含该有机绝缘膜的有机绝缘膜，包括有机绝缘膜的有机薄膜晶体管，包括有机薄膜晶体管的电子器件及其制造方法。 在该组合物中，包括具有羧基的有机聚合物材料和具有给电子基团的有机硅烷材料，从而实现可以进一步稳定未反应的交联材料的结构。 因此，滞后现象可能会降低，并且可能增加透明度，从而可以确保暴露在空气中时的稳定性。 因此，有机薄膜晶体管的寿命可以延长。