公开(公告)号：US08928054B2

公开(公告)日：2015-01-06

申请号：US13416514

申请日：2012-03-09

Applicant: Sang-Youn Han ,  Mi-Seon Seo ,  Sung-Hoon Yang

Inventor： Sang-Youn Han ,  Mi-Seon Seo ,  Sung-Hoon Yang

IPC: H01L31/062

CPC classification number: H01L31/1136 ,  H01L27/14649 ,  H01L27/14692

Abstract: A touch substrate includes a base substrate, a sensing element and a switching element. The sensing element is disposed over the base substrate, senses infrared light, and includes a sensing semiconductor pattern. The switching element is electrically connected to the sensing element, includes a material substantially the same as a material of the sensing semiconductor pattern, and includes a switching semiconductor pattern having a thickness different from a thickness of the sensing semiconductor pattern.

Abstract translation: 触摸基板包括基底基板，感测元件和开关元件。 感测元件设置在基底基板上，感测红外光，并且包括感测半导体图案。 开关元件电连接到感测元件，包括与感测半导体图案的材料基本相同的材料，并且包括具有不同于感测半导体图案的厚度的厚度的开关半导体图案。

公开(公告)号：US08907924B2

公开(公告)日：2014-12-09

申请号：US13090991

申请日：2011-04-20

Applicant: Sang-Youn Han ,  Dong-Kwon Kim ,  Kyung-Sook Jeon ,  Sung-Hoon Yang ,  Joo-Han Kim ,  Woong-Kwon Kim ,  Suk-Won Jung ,  Byeong-Hoon Cho ,  Dae-Cheol Kim ,  Hui-Sung Lee ,  Ki-Hun Jeong ,  Seung-Mi Seo ,  Jung-Suk Bang ,  Kun-Wook Han ,  Mi-Seon Seo

Inventor： Sang-Youn Han ,  Dong-Kwon Kim ,  Kyung-Sook Jeon ,  Sung-Hoon Yang ,  Joo-Han Kim ,  Woong-Kwon Kim ,  Suk-Won Jung ,  Byeong-Hoon Cho ,  Dae-Cheol Kim ,  Hui-Sung Lee ,  Ki-Hun Jeong ,  Seung-Mi Seo ,  Jung-Suk Bang ,  Kun-Wook Han ,  Mi-Seon Seo

IPC: G06F3/042 ,  G06F3/041

CPC classification number: G06F3/0418 ,  G06F3/042

Abstract: An information detection device includes: a plurality of light sensing units each configured to detect light; a plurality of sensor scanning drivers each configured to apply sensor scanning signals to the light sensing units; a sensing signal processor configured to receive position information detected by the light sensing units; a plurality of bias applying units each configured to apply bias voltages to the light sensing units; wherein each bias applying unit applies a different polarity of bias voltage.

Abstract translation: 信息检测装置包括：多个光检测单元，每个光检测单元被配置为检测光; 多个传感器扫描驱动器，每个传感器扫描驱动器被配置为将传感器扫描信号施加到光感测单元; 感测信号处理器，被配置为接收由所述光感测单元检测到的位置信息; 多个偏置施加单元，每个偏置施加单元被配置为向所述光感测单元施加偏置电压; 其中每个偏置施加单元施加不同的偏置电压极性。

公开(公告)号：US08891031B2

公开(公告)日：2014-11-18

申请号：US12753666

申请日：2010-04-02

Applicant: Dong-Kwon Kim ,  Hyung-Guel Kim ,  Jun-Ho Song ,  Nam-Heon Kim ,  Joo-Hyung Lee ,  Sung-Hoon Yang ,  Kyung-Hun Yoon ,  Myung-Hun Shin ,  Jae-Hyun Cho

Inventor： Dong-Kwon Kim ,  Hyung-Guel Kim ,  Jun-Ho Song ,  Nam-Heon Kim ,  Joo-Hyung Lee ,  Sung-Hoon Yang ,  Kyung-Hun Yoon ,  Myung-Hun Shin ,  Jae-Hyun Cho

IPC: G02F1/1335 ,  G02F1/13 ,  G09G3/36 ,  G06F3/042 ,  G01J1/02 ,  G06F3/041 ,  G01J1/42 ,  G01J1/04

CPC classification number: G02F1/13338 ,  G01J1/02 ,  G01J1/0209 ,  G01J1/0219 ,  G01J1/0488 ,  G01J1/4228 ,  G02F1/133345 ,  G02F1/133603 ,  G02F1/136209 ,  G02F2001/136222 ,  G02F2203/11 ,  G06F3/0412 ,  G06F3/042 ,  G06F3/0421

Abstract: In a sensing device and a method for sending a light by using the same, the sensing device includes: a lower panel; an upper panel facing the lower panel; a liquid crystal layer disposed between the lower panel and the upper panel; an infrared ray sensor formed in at least one of the lower panel and the upper panel; and a visible ray sensor formed in at least one of the lower panel and the upper panel. The sensing device simultaneously includes the infrared ray sensor and the visible ray sensor such that a touch sensing function or an image sensing function having high reliability may be realized.

Abstract translation: 在感测装置和通过使用其发送光的方法中，感测装置包括：下面板; 面向下面板的上面板; 设置在下板和上板之间的液晶层; 形成在所述下板和所述上板中的至少一个中的红外线传感器; 以及形成在所述下面板和所述上面板中的至少一个中的可见光线传感器。 感测装置同时包括红外线传感器和可见光线传感器，使得可以实现具有高可靠性的触摸感测功能或图像感测功能。

公开(公告)号：US08680527B2

公开(公告)日：2014-03-25

申请号：US12978446

申请日：2010-12-24

Applicant: Yeon-Ju Kim ,  Sung-Jae Moon ,  Yun-Jung Cho ,  Bum-Ki Baek ,  Kwang-Hoon Lee ,  Byoung-Sun Na ,  Sung-Hoon Yang ,  Yoon-Jang Kim ,  Eun Cho

Inventor： Yeon-Ju Kim ,  Sung-Jae Moon ,  Yun-Jung Cho ,  Bum-Ki Baek ,  Kwang-Hoon Lee ,  Byoung-Sun Na ,  Sung-Hoon Yang ,  Yoon-Jang Kim ,  Eun Cho

IPC: H01L29/417

CPC classification number: G03F1/38 ,  G03F1/00 ,  G03F1/14 ,  G03F1/36 ,  H01L29/41733

Abstract: A photomask includes; a source electrode pattern including; a first electrode portion which extends in a first direction, a second electrode portion which extends in the first direction and is substantially parallel to the first electrode portion, and a third electrode portion which extends from a first end of the first electrode portion to a first end of the second electrode portion and is rounded with a first curvature, a drain electrode pattern which extends in the first direction and is disposed between the first electrode portion and the second electrode portion, wherein an end of the drain electrode pattern is rounded to correspond to the third electrode portion; and a channel region pattern which is disposed between the source electrode pattern and the drain electrode pattern, wherein a center location of the first curvature and a center location of the rounded portion of the end of the drain electrode pattern are the same.

Abstract translation: 光掩模包括; 源电极图案，包括： 沿第一方向延伸的第一电极部分，沿第一方向延伸并基本上平行于第一电极部分的第二电极部分，以及从第一电极部分的第一端延伸到第一电极部分的第三电极部分， 并且以第一曲率圆形化，漏电极图案，其沿第一方向延伸并且设置在第一电极部分和第二电极部分之间，其中漏极电极图案的端部被圆化以对应 到所述第三电极部分; 以及设置在源极电极图案和漏极电极图案之间的沟道区域图案，其中第一曲率的中心位置和漏极电极图案的端部的圆形部分的中心位置相同。

公开(公告)号：US08486775B2

公开(公告)日：2013-07-16

申请号：US13020467

申请日：2011-02-03

Applicant: Byoung-June Kim ,  Jae-Ho Choi ,  Chang-Oh Jeong ,  Sung-Hoon Yang ,  Je-Hun Lee ,  Do-Hyun Kim ,  Hwa-Yeul Oh ,  Yong-Mo Choi

Inventor： Byoung-June Kim ,  Jae-Ho Choi ,  Chang-Oh Jeong ,  Sung-Hoon Yang ,  Je-Hun Lee ,  Do-Hyun Kim ,  Hwa-Yeul Oh ,  Yong-Mo Choi

IPC: H01L21/84

CPC classification number: H01L27/1255 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66765

Abstract: A manufacturing method of a thin film transistor (TFT) includes forming a gate electrode including a metal that can be combined with silicon to form silicide on a substrate and forming a gate insulation layer by supplying a gas which includes silicon to the gate electrode at a temperature below about 280° C. The method further includes forming a semiconductor on the gate insulation layer, forming a data line and a drain electrode on the semiconductor and forming a pixel electrode connected to the drain electrode.

公开(公告)号：US08445909B2

公开(公告)日：2013-05-21

申请号：US13102824

申请日：2011-05-06

Applicant: Kyung-Sook Jeon ,  Jun-Ho Song ,  Sang-Youn Han ,  Sung-Hoon Yang ,  Dae-Cheol Kim ,  Ki-Hun Jeong ,  Mi-Seon Seo

Inventor： Kyung-Sook Jeon ,  Jun-Ho Song ,  Sang-Youn Han ,  Sung-Hoon Yang ,  Dae-Cheol Kim ,  Ki-Hun Jeong ,  Mi-Seon Seo

IPC: H01L29/04

CPC classification number: H01L27/1446 ,  H01L27/14683

Abstract: Provided are a sensor array substrate and a method of fabricating the same. The sensor array substrate includes: a substrate in which a switching element region and a sensor region that senses light are defined; a first semiconductor layer which is formed in the sensor region; a first gate electrode which is formed on the first semiconductor layer and overlaps the first semiconductor layer; a second gate electrode which is formed in the switching element region; a second semiconductor layer which is formed on the second gate electrode and overlaps the second gate electrode; and a light-blocking pattern which is formed on the second semiconductor layer and overlaps the second semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer are disposed on different layers, and the second gate electrode and the light-blocking pattern are electrically connected to each other.

Abstract translation: 提供传感器阵列基板及其制造方法。 传感器阵列基板包括：限定开关元件区域和感测光的传感器区域的基板; 形成在所述传感器区域中的第一半导体层; 第一栅电极，其形成在所述第一半导体层上并与所述第一半导体层重叠; 形成在所述开关元件区域中的第二栅电极; 第二半导体层，其形成在所述第二栅电极上并与所述第二栅电极重叠; 以及形成在所述第二半导体层上并与所述第二半导体层重叠的遮光图案，其中所述第一半导体层和所述第二半导体层设置在不同的层上，并且所述第二栅电极和所述遮光图案是电 相互连接。

公开(公告)号：US08325302B2

公开(公告)日：2012-12-04

申请号：US12722766

申请日：2010-03-12

Applicant: Byeong-Hoon Cho ,  Sung-Hoon Yang ,  Kap-Soo Yoon ,  Ki-Hun Jeong ,  Kyung-Sook Jeon ,  Woong-Kwon Kim ,  Sang-Youn Han ,  Dae-Cheol Kim ,  Jung-Suk Bang

Inventor： Byeong-Hoon Cho ,  Sung-Hoon Yang ,  Kap-Soo Yoon ,  Ki-Hun Jeong ,  Kyung-Sook Jeon ,  Woong-Kwon Kim ,  Sang-Youn Han ,  Dae-Cheol Kim ,  Jung-Suk Bang

IPC: G02F1/1335

CPC classification number: C22C28/00 ,  G01J1/02 ,  G01J1/0209 ,  G01J1/0219 ,  G01J1/0488 ,  G01J1/4228 ,  G02F1/133512 ,  G02F2001/13312 ,  G06F3/0412 ,  G06F3/042

Abstract: In a visible-light blocking member, an infrared sensor including the visible-light blocking member, and a liquid crystal display including the infrared sensor, a visible-light blocking member is a structure including amorphous germanium or a compound of amorphous germanium and has higher transmittance for a wavelength of an infrared ray region than for a wavelength of a visible light region. Accordingly, sensitivity to infrared rays may be increased by applying the visible-light blocking member to the infrared sensor.

Abstract translation: 在可见光阻挡构件中，包括可见光阻挡构件的红外传感器和包括红外传感器的液晶显示器，可见光阻挡构件是包括无定形锗或无定形锗化合物的结构，并且具有较高的 对于可见光区域的波长的红外线区域的波长的透射率。 因此，可以通过将可见光阻挡构件施加到红外传感器来增加对红外线的敏感度。

公开(公告)号：US08319905B2

公开(公告)日：2012-11-27

申请号：US12353152

申请日：2009-01-13

Applicant: Kap-Soo Yoon ,  Sung-Hoon Yang ,  Sung-Ryul Kim ,  Hwa-Yeul Oh ,  Jae-Ho Choi ,  Yong-Mo Choi

Inventor： Kap-Soo Yoon ,  Sung-Hoon Yang ,  Sung-Ryul Kim ,  Hwa-Yeul Oh ,  Jae-Ho Choi ,  Yong-Mo Choi

IPC: G02F1/1368 ,  H01L29/10

CPC classification number: G02F1/1368 ,  G02F2202/108 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/7869

Abstract: Provided are a display substrate and a display device including the same. The display substrate includes: gate wiring; a first semiconductor pattern formed on the gate wiring and having a first energy bandgap; a second semiconductor pattern formed on the first semiconductor pattern and having a second energy bandgap which is greater than the first energy bandgap; data wiring formed on the first semiconductor pattern; and a pixel electrode electrically connected to the data wiring. Because the second energy bandgap is larger than the first energy bandgap, a quantum well is formed in the first semiconductor pattern, enhancing electron mobility therein.

Abstract translation: 提供了一种显示基板和包括该基板的显示装置。 显示基板包括：栅极布线; 形成在所述栅极布线上并具有第一能量带隙的第一半导体图案; 形成在所述第一半导体图案上并具有大于所述第一能带隙的第二能带隙的第二半导体图案; 形成在第一半导体图案上的数据布线; 以及与数据配线电连接的像素电极。 由于第二能量带隙大于第一能带隙，所以在第一半导体图案中形成量子阱，增强其中的电子迁移率。

公开(公告)号：US08253892B2

公开(公告)日：2012-08-28

申请号：US12547039

申请日：2009-08-25

Applicant: Seung-Hwan Shim ,  Gug-Rae Jo ,  Sung-Hoon Yang ,  Kap-Soo Yoon ,  Ki-Hun Jeong ,  Jae-Ho Choi ,  Yang-Ho Jung

Inventor： Seung-Hwan Shim ,  Gug-Rae Jo ,  Sung-Hoon Yang ,  Kap-Soo Yoon ,  Ki-Hun Jeong ,  Jae-Ho Choi ,  Yang-Ho Jung

IPC: G02F1/1335

CPC classification number: G02F1/136227 ,  G02F1/133514 ,  G02F2001/133565 ,  G02F2001/133567 ,  H01L27/1248

Abstract: A liquid crystal display includes; a first substrate, a gate line and a data line disposed on the first substrate, a color filter including protrusions and depressions aligned with the data line, the color filter being disposed on the data line, a pixel electrode disposed on the color filter, a second substrate facing the first substrate, a common electrode disposed on the second substrate, and a liquid crystal layer interposed between the first substrate and the second substrate.

Abstract translation: 液晶显示器包括： 设置在第一基板上的第一基板，栅线和数据线，包括与数据线对准的突起和凹陷的滤色器，滤色器设置在数据线上，设置在滤色器上的像素电极， 面对第一基板的第二基板，设置在第二基板上的公共电极以及插在第一基板和第二基板之间的液晶层。

公开(公告)号：US08067768B2

公开(公告)日：2011-11-29

申请号：US12780246

申请日：2010-05-14

Applicant: Kap-Soo Yoon ,  Do-Hyun Kim ,  Sung-Hoon Yang ,  Ki-Hun Jeong ,  Jae-Ho Choi ,  Seung-Mi Seo

Inventor： Kap-Soo Yoon ,  Do-Hyun Kim ,  Sung-Hoon Yang ,  Ki-Hun Jeong ,  Jae-Ho Choi ,  Seung-Mi Seo

IPC: H01L29/786

CPC classification number: H01L27/1248 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/1288 ,  H01L29/7869

Abstract: Provided is a thin-film transistor (TFT) display panel having improved electrical and reliability properties and a method of fabricating the TFT display panel. The TFT display panel includes gate wiring formed on a substrate; an oxide active layer pattern formed on the gate wiring; data wiring formed on the oxide active layer pattern to cross the gate wiring; a passivation layer formed on the oxide active layer pattern and the data wiring and made of nitrogen oxide; and a pixel electrode disposed on the passivation layer.

Abstract translation: 提供了具有改善的电气和可靠性的薄膜晶体管（TFT）显示面板和制造TFT显示面板的方法。 TFT显示面板包括形成在基板上的栅极布线; 形成在栅极布线上的氧化物有源层图案; 在所述氧化物有源层图案上形成的与所述栅极布线交叉的数据布线; 形成在氧化物活性层图案上的钝化层和由氮氧化物制成的数据布线; 以及设置在钝化层上的像素电极。