摘要:
A semiconductor memory device manufactured separately is connected to an interface unit of a semiconductor device. An internal memory formed in the semiconductor device is connected to at least a part of the interface unit. A memory selecting circuit makes the internal memory accessible in a first operation mode, and makes the internal memory inaccessible in a second operation mode. Therefore, for example, putting the semiconductor device into the first operation mode and accessing the internal memory enables the semiconductor device to operate as a predetermined system even when the semiconductor memory device is not connected to the interface unit. The substitution of the internal memory for the semiconductor memory device makes it possible for the semiconductor device to test the interface unit and associated circuits thereof by itself. This consequently allows improvement in the assembly yield of multichip modules.
摘要:
A command receiver circuit receives a command signal in synchronization with either a rising edge or a falling edge of a clock signal. A data input/output circuit starts an output of read data and an input of write data in synchronization with the edges of the clock signal which are set in response to reception timing of the command signal. Since the command signal can be received in synchronization with both edges of the clock signal, it is possible to halve a clock cycle when a reception rate is the same as that of the conventional art. As a result of this, in a system on which the semiconductor memory device is mounted, it is possible to halve the frequency of a system clock and to reduce power consumption of a clock synchronization circuit in the system, without reducing a data input/output rate for the semiconductor memory device.
摘要:
A semiconductor device for generating first and second internal clocks complementary with each other from an external clock and usable for both a system of a type using a complementary clock and a system of a type generating a 180° phase clock internally, is disclosed. A first clock input circuit (buffer) is supplied with a first external clock and outputs a first internal clock. A second clock input circuit (buffer) is supplied with a second external clock complementary with the first external clock and outputs a second clock. A ½ phase clock generating circuit generates a ½ phase shift signal 180° out of phase with the first internal clock. A second external clock state detection circuit judges whether the second external clock is input to the second clock input buffer. A switch is operated to produce the second clock as the second internal clock when the second external clock is input and to produce the ½ phase shift signal as the second internal clock when the second external clock is not input, in accordance with the judgement at the second external clock state detection circuit.
摘要:
A data signal is output from an output circuit of a first chip and sent to a data input terminal in the second chip via a data lead line based on an output clock in first chip, which is sent to the second chip. And an input circuit in a second chip receives the data signal and transfers it inside in response to a transfer clock that has been generated from the output clock in the first chip. In synchronism with a single reference clock in the first chip, therefore, a data signal can be transferred to the second chip from the first chip at a high speed.
摘要:
A semiconductor device for generating first and second internal clocks complementary with each other from an external clock and usable for both a system of a type using a complementary clock and a system of a type generating a 180° phase clock internally, is disclosed. A first clock input circuit (buffer) is supplied with a first external clock and outputs a first internal clock. A second clock input circuit (buffer) is supplied with a second external clock complementary with the first external clock and outputs a second clock. A ½ phase clock generating circuit generates a ½ phase shift signal 180° out of phase with the first internal clock. A second external clock state detection circuit judges whether the second external clock is input to the second clock input buffer. A switch is operated to produce the second clock as the second internal clock when the second external clock is input and to produce the ½ phase shift signal as the second internal clock when the second external clock is not input, in accordance with the judgement at the second external clock state detection circuit.
摘要:
A semiconductor memory device, which refreshes memory cells to retain data, has a first refresh mode and a second refresh mode. The first refresh mode is a mode for refreshing all of the memory cells, and the second refresh mode is a mode for refreshing a part of the memory cells. By refreshing only designated areas where data must be retained, power consumption in a refresh operation can be reduced, drastically cutting power consumption in a power-down mode.
摘要:
The present invention is an integrated circuit device having a self timing control circuit for generating an input loading timing signal whose phase is adjusted with an external clock, where loading of input signals supplied from outside, such as a command input signal, address input signal and data input signal, to internal circuits is forbidden when the self timing control circuit is adjusting phase. And when the self timing control circuit finishes adjusting the phase to a certain degree, the loading operation of an input signal at the input circuit using the input loading timing signal is enabled. To execute such an operation, the input circuit generates an input loading control signal based on a lock-on signal or adjustment signal of the DLL circuit, or based on an input stop cancellation signal, for example. The input circuit controls the stop and restart of loading of the input signal according to this input loading control signal.
摘要:
The present invention omits a variable delay circuit (10 in FIG. 1) inside a DLL circuit, and instead, creates a timing synchronization circuit, which generates a second reference clock. The timing synchronization circuit shifts the phase of a first reference clock generated by a frequency divider to the timing of a timing signal generated from the other variable delay circuit so that the second reference clock matches to the timing signal. Then, a phase comparator compares the divided first reference clock to a variable clock that delays the second reference clock, and controls the delay time of the variable delay circuit so that both clocks are in phase. As a result, one variable delay circuit can be omitted, and a DLL circuit that uses a divided clock can be configured.
摘要:
A semiconductor integrated circuit device includes a DLL circuit. The DLL circuit includes a frequency divider which frequency-divides an input clock at a frequency dividing ratio which is varied depending on a frequency of the input clock and thus results in a dummy clock and a reference clock. A delay system includes a variable delay circuit which delays the dummy clock. A control circuit controls a delay amount of the variable delay circuit so that a phase of a delayed dummy clock from the delay system and the reference clock becomes zero.
摘要:
A switch 17 for short-circuiting is connected between the outputs of circuits 15 and 16 each of which outputs a pair of complementary signals .0.S1 and .0.R1. The circuits 15 and 16, and the switch 17 are controlled by a changeover control circuit 18 in response to an input signal .0.A1. To effectively utilizes electric charge which has become unnecessary on a complementary signal line pair, the circuit 18 comprises an edge detecting circuit for providing a pulse to the switch 17 to make it on in response to the edge of the signal .0.A1, and a state control circuit for making the outputs of the circuits 15 and 16 in a high impedance state while the switch 17 being on, and for making the logic states of the signals .0.S1 and .0.R1 completely transit in response to disappearance of the pulse while the switch 17 being off.