Method of manufacturing field emission device
    71.
    发明申请
    Method of manufacturing field emission device 有权
    场致发射装置的制造方法

    公开(公告)号:US20080108271A1

    公开(公告)日:2008-05-08

    申请号:US11790657

    申请日:2007-04-26

    CPC classification number: H01J63/02 H01J9/025 H01J2201/30469 H01J2329/0455

    Abstract: A method of manufacturing a field emission display includes: sequentially forming a cathode electrode, an insulating layer, and a gate material layer on a substrate; forming a metal sacrificial layer on an upper surface of the gate material layer; forming a through hole to expose the insulating layer in the metal sacrificial layer and the gate material layer; forming an emitter hole to expose the cathode electrode in the insulating layer exposed through the through hole; forming a gate electrode by etching the gate material layer constituting an upper wall of the emitter hole; and forming an emitter of Carbon NanoTubes (CNTs) on an upper surface of the cathode electrode located below the through hole.

    Abstract translation: 场发射显示器的制造方法包括:在基板上依次形成阴极电极,绝缘层和栅极材料层; 在栅极材料层的上表面上形成金属牺牲层; 形成通孔以暴露金属牺牲层和栅极材料层中的绝缘层; 形成发射极孔,露出通过该通孔的绝缘层中的阴极电极; 通过蚀刻构成发射极孔的上壁的栅极材料层来形成栅电极; 以及在位于通孔下方的阴极电极的上表面上形成碳纳米管(CNT)的发射极。

    Nanowire electromechanical switching device, method of manufacturing the same and electromechanical memory device using the nanowire electromechanical switching device
    72.
    发明申请
    Nanowire electromechanical switching device, method of manufacturing the same and electromechanical memory device using the nanowire electromechanical switching device 有权
    纳米线机电开关器件及其制造方法和使用纳米线机电开关器件的机电存储器件

    公开(公告)号:US20080061351A1

    公开(公告)日:2008-03-13

    申请号:US11889515

    申请日:2007-08-14

    Abstract: A nanowire electromechanical switching device is constructed with a source electrode and a drain electrode disposed on an insulating substrate and spaced apart from each other, a first nanowire vertically grown on the source electrode and to which a V1 voltage is applied, a second nanowire vertically grown on the drain electrode and to which a V2 voltage having an opposite polarity to that of the V1 voltage is applied, and a gate electrode spaced apart from the second nanowire, partially surrounding the second nanowire and having an opening that faces the first nanowire in order to avoid disturbing a mutual switching operation of the first nanowire and the second nanowire and to which a V3 voltage having the same polarity as that of the V2 voltage is applied.

    Abstract translation: 纳米线机电开关器件由源电极和漏电极构成,绝缘基片设置在绝缘基片上并彼此隔开,第一纳米线在源电极上垂直生长,并且V 1电压 施加在漏电极上垂直生长的第二纳米线,并且施加具有与V 1电压的极性相反极性的V 2电压,并且栅极 电极与第二纳米线间隔开,部分地围绕第二纳米线并且具有面向第一纳米线的开口,以避免干扰第一纳米线和第二纳米线的相互切换操作,并且V 3 施加具有与V 2电压相同极性的电压。

    Electroluminescent device
    73.
    发明申请
    Electroluminescent device 审中-公开
    电致发光器件

    公开(公告)号:US20080007171A1

    公开(公告)日:2008-01-10

    申请号:US11730720

    申请日:2007-04-03

    CPC classification number: H05B33/10 H05B33/24 H05B33/26 H05B33/28

    Abstract: An electroluminescent device uses nano structures having a wide surface area. The electroluminescent device includes a substrate, a first electrode having a plurality of nano structures formed on an upper surface of the substrate, a dielectric layer formed so as to correspond to the shape of the nano structures, a light emitting layer formed so as to correspond to the shape of the dielectric layer, and a second electrode covering the light emitting layer. A surface of the second electrode facing the light emitting layer is separated by a predetermined distance from a surface of the nano structures.

    Abstract translation: 电致发光器件使用具有宽表面积的纳米结构。 电致发光器件包括衬底,具有形成在衬底的上表面上的多个纳米结构的第一电极,形成为对应于纳米结构的形状的电介质层,形成为对应于发光层的发光层 到电介质层的形状,以及覆盖发光层的第二电极。 面向发光层的第二电极的表面与纳米结构的表面隔开预定的距离。

    Field emission backlight unit, method of driving the backlight unit, and method of manufacturing lower panel
    74.
    发明申请
    Field emission backlight unit, method of driving the backlight unit, and method of manufacturing lower panel 失效
    场致发射背光单元,驱动背光单元的方法以及制造下面板的方法

    公开(公告)号:US20050152155A1

    公开(公告)日:2005-07-14

    申请号:US10980793

    申请日:2004-11-04

    Abstract: A field emission backlight unit for a liquid crystal display (LCD) includes: a lower substrate; first electrodes and second electrodes alternately formed in parallel lines on the lower substrate; emitters disposed on at least the first electrodes; an upper substrate spaced apart from the lower substrate by a predetermined distance such that the upper and lower substrates face each other; a third electrode formed on a bottom surface of the upper substrate; and a fluorescent layer formed on the third electrode. Since the backlight unit has a triode-type field emission structure, field emission is very stable. Since the first electrodes and the second electrodes are formed in the same plane, brightness uniformity is improved and manufacturing processes are simplified. If the emitters are disposed on both the first electrodes and the second electrodes, and a cathode voltage and a gate voltage are alternately applied to the first electrodes and second electrodes, the lifespan and brightness of the emitters can be improved. The above advantages are also achieved as a result of the method of driving the backlight unit and the method of manufacturing the lower panel thereof.

    Abstract translation: 用于液晶显示器(LCD)的场发射背光单元包括:下基板; 第一电极和第二电极在下基板上交替地以平行线形成; 至少设置在第一电极上的发射体; 上基板与下基板隔开预定距离,使得上基板和下基板彼此面对; 形成在所述上基板的底面上的第三电极; 以及形成在第三电极上的荧光层。 由于背光单元具有三极管型场发射结构,因此场发射非常稳定。 由于第一电极和第二电极形成在同一平面上,因此亮度均匀性得到改善,制造工艺简化。 如果发射体设置在第一电极和第二电极两者上,并且阴极电压和栅极电压交替施加到第一电极和第二电极,则能够提高发光体的寿命和亮度。 通过驱动背光单元的方法和制造其下面板的方法也可以实现上述优点。

    Pixel circuit and display apparatus including the same
    77.
    发明授权
    Pixel circuit and display apparatus including the same 有权
    像素电路及其显示装置

    公开(公告)号:US08896567B2

    公开(公告)日:2014-11-25

    申请号:US13096447

    申请日:2011-04-28

    Abstract: A pixel circuit includes a first transistor that supplies a data signal to a first node in response to a scan signal. The pixel circuit may also include a capacitor that is connected between the first node and a ground voltage and a detecting unit that is connected in parallel with the capacitor. More so, the detecting unit may change a voltage of the first node by being activated in response to a mode signal. Also, the detecting unit may have resistance that varies according to an external stimulus. The pixel circuit may also include a second transistor that is complementarily activated with respect to the detecting unit in response to the mode signal, and that provides a voltage of the first node.

    Abstract translation: 像素电路包括响应于扫描信号将数据信号提供给第一节点的第一晶体管。 像素电路还可以包括连接在第一节点和地电压之间的电容器以及与电容器并联连接的检测单元。 更重要的是,检测单元可以通过响应于模式信号被激活来改变第一节点的电压。 此外,检测单元可以具有根据外部刺激而变化的电阻。 像素电路还可以包括响应于模式信号而相对于检测单元互补地激活的第二晶体管,并且提供第一节点的电压。

    Method of manufacturing electric device, array of electric devices, and manufacturing method therefor
    78.
    发明授权
    Method of manufacturing electric device, array of electric devices, and manufacturing method therefor 有权
    电气装置的制造方法,电气装置的阵列及其制造方法

    公开(公告)号:US08679984B2

    公开(公告)日:2014-03-25

    申请号:US13173986

    申请日:2011-06-30

    Abstract: An example embodiment relates to a method of manufacturing an array of electric devices that includes attaching a platform including a micro-channel structure to a substrate. The method includes injecting first and second solutions into the micro-channel structure to form at least three liquid film columns, where the first and second solutions include different solvent composition ratios and the liquid columns each, respectfully, include different solvent composition ratios. The method further includes detaching the platform the substrate, removing solvent from the liquid film columns to form thin film columns, and treating the thin film columns under different conditions along a length direction of the thin film columns. The solvent is removed from the thin film columns and the thin film columns are treated under different conditions along a length direction of the thin film columns.

    Abstract translation: 示例性实施例涉及一种制造电气设备阵列的方法,其包括将包括微通道结构的平台附接到基板。 该方法包括将第一和第二溶液注入到微通道结构中以形成至少三个液膜柱,其中第一和第二溶液包括不同的溶剂组成比,并且液柱各自包括不同的溶剂组成比。 该方法还包括将基板分离,从液膜柱移除溶剂以形成薄膜柱,以及沿着薄膜柱的长度方向在不同条件下处理薄膜柱。 从薄膜柱中除去溶剂,并在薄膜柱的长度方向上在不同的条件下处理薄膜柱。

    Image Sensor
    79.
    发明申请
    Image Sensor 有权
    图像传感器

    公开(公告)号:US20120261649A1

    公开(公告)日:2012-10-18

    申请号:US13224613

    申请日:2011-09-02

    CPC classification number: H01L51/0043 H01L51/4253

    Abstract: An example embodiment of the image sensor includes a light-sensing device including a first electrode, a second electrode disposed opposite to the first electrode, and a photoelectric conversion layer positioned between the first electrode and the second electrode. The photoelectric conversion layer includes a block copolymer including electron donating blocks and electron accepting blocks. The electron donating blocks are deposited together and connected to the first electrode and the second electrode. The electron accepting blocks are deposited together and connected to the first electrode and the second electrode. A color filter may be positioned on the second electrode of the light-sensing device.

    Abstract translation: 图像传感器的示例性实施例包括光检测装置,其包括第一电极,与第一电极相对设置的第二电极和位于第一电极和第二电极之间的光电转换层。 光电转换层包括含有给电子基团和电子接受嵌段的嵌段共聚物。 给电子块沉积在一起并连接到第一电极和第二电极。 电子接收块被沉积在一起并连接到第一电极和第二电极。 滤色器可以位于光感测装置的第二电极上。

Patent Agency Ranking