公开(公告)号：US10312076B2

公开(公告)日：2019-06-04

申请号：US15917079

申请日：2018-03-09

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit Ghosh ,  Sanjeev Baluja ,  Mayur G. Kulkarni

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/455 ,  C23C16/44 ,  C23C16/40 ,  C23C16/458 ,  C23C16/50

Abstract: Apparatus and methods for depositing a film in a PECVD chamber while simultaneously flowing a purge gas from beneath a substrate support are provided herein. In embodiments disclosed herein, a combined gas exhaust volume circumferentially disposed about the substrate support, below a first volume and above a second volume, draws processing gases from the first volume down over an edge of a first surface of the substrate support and simultaneously draws purge gases from the second volume upward over an edge of a second surface of the substrate support. The gases are than evacuated from the combined exhaust volume through an exhaust port fluidly coupled to a vacuum source.

公开(公告)号：US10199388B2

公开(公告)日：2019-02-05

申请号：US15214104

申请日：2016-07-19

Applicant: Applied Materials, Inc.

Inventor： Michael Wenyoung Tsiang ,  Praket P. Jha ,  Xinhai Han ,  Bok Hoen Kim ,  Sang Hyuk Kim ,  Myung Hun Ju ,  Hyung Jin Park ,  Ryeun Kwan Kim ,  Jin Chul Son ,  Saiprasanna Gnanavelu ,  Mayur G. Kulkarni ,  Sanjeev Baluja ,  Majid K. Shahreza ,  Jason K. Foster

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/40 ,  C23C16/455 ,  C23C16/505 ,  C23C16/52 ,  H01L27/11582 ,  H01L27/11556 ,  H01L21/3115 ,  H01L29/06 ,  H01L21/768 ,  H01L27/11548 ,  H01L27/11575 ,  H01L21/3105 ,  H01L21/311

Abstract: Embodiments of the present disclosure generally relate to an improved method for forming a dielectric film stack used for inter-level dielectric (ILD) layers in a 3D NAND structure. In one embodiment, the method comprises providing a substrate having a gate stack deposited thereon, forming on exposed surfaces of the gate stack a first oxide layer using a first RF power and a first process gas comprising a TEOS gas and a first oxygen-containing gas, and forming over the first oxide layer a second oxide layer using a second RF power and a second process gas comprising a silane gas and a second oxygen-containing gas.

公开(公告)号：US10113231B2

公开(公告)日：2018-10-30

申请号：US15138209

申请日：2016-04-25

Applicant: Applied Materials, Inc.

Inventor： Dale R. Dubois ,  Kalyanjit Ghosh ,  Kien N. Chuc ,  Mayur G. Kulkarni ,  Sanjeev Baluja ,  Yanjie Wang ,  Sungjin Kim

IPC: H01L21/67 ,  H01J37/32 ,  C23C16/44

Abstract: A process chamber is provided including a sidewall, a substrate support having an outer ledge, and a gas inlet beneath the substrate support. The process chamber further includes a first liner disposed around a bottom surface of the outer ledge of the substrate support. The first liner has an inner surface separated from the outer ledge of the substrate support by a first gap. The process chamber further includes a flow isolator ring having an inner bottom surface disposed on the outer ledge of the substrate support and an outer bottom surface extending outwardly relative to the inner bottom surface, the outer bottom surface overlying the first gap.

公开(公告)号：US10017855B2

公开(公告)日：2018-07-10

申请号：US14975133

申请日：2015-12-18

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit Ghosh ,  Mayur G. Kulkarni ,  Sanjeev Baluja ,  Kien N. Chuc ,  Sungjin Kim ,  Yanjie Wang

IPC: H01L21/00 ,  C23C16/44 ,  H01J37/32

CPC classification number: C23C16/4412 ,  C23C16/4401 ,  H01J37/32477

Abstract: A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a liner assembly disposed within an interior volume of the processing chamber, and a C-channel disposed in an interior volume of the chamber, circumscribing the liner assembly. In another embodiment, a process kit disposed in the interior volume of the processing chamber is disclosed herein. The process kit includes a liner assembly, a C-channel, and an isolator disposed in the interior volume. The C-channel and the isolator circumscribe the liner assembly. A method for depositing a silicon based material on a substrate by flowing a precursor gas into a processing chamber is also described herein.

公开(公告)号：US20250149367A1

公开(公告)日：2025-05-08

申请号：US19009195

申请日：2025-01-03

Applicant: Applied Materials, Inc.

Inventor： Muhannad Mustafa ,  Sanjeev Baluja

IPC: H01L21/68 ,  B25B11/00 ,  H01L21/683

Abstract: Processing chambers, substrate supports, centering wafers and methods of center calibrating wafer hand-off are described. A centering wafer comprises a disc-shaped body having a top surface and a bottom surface defining a thickness, a center, an outer edge having an outer peripheral face, a first arc-shaped slit and a second arc-shaped slit. Embodiments of the disclosure advantageously provide the ability to use the centering wafer to monitor and control backside pressure and thereby determine the center of a substrate support prior to processing the centering wafer. The centering wafer may be centered at a plurality of different angles by rotating the centering wafer.

公开(公告)号：USD1071103S1

公开(公告)日：2025-04-15

申请号：US29834288

申请日：2022-04-11

Applicant: Applied Materials, Inc.

Designer： Prahallad Iyengar ,  Janisht Golcha ,  Kartik Shah ,  Chaowei Wang ,  Sanjeev Baluja

公开(公告)号：US20250092953A1

公开(公告)日：2025-03-20

申请号：US18368144

申请日：2023-09-14

Applicant: Applied Materials, Inc.

Inventor： Muhannad Mustafa ,  Sanjeev Baluja

IPC: F16K1/54 ,  F16K1/38 ,  F16K13/00

Abstract: Variable orifice valves comprising a first fixed plate, a second fixed plate and a movable plate between are described. The movable plate is connected to the first fixed plate and the second fixed plate by sealing elements. The movable plate is moved closer to or further from the first fixed plate by rotation of an actuator ring that rotates at least two rotary elements connected to the movable plate. A needle on the movable plate engages an opening in the valve to seal or open the valve to allow fluid flow. Methods of controlling flow of fluid through the variable orifice valve are also described.

公开(公告)号：US20240360553A1

公开(公告)日：2024-10-31

申请号：US18765501

申请日：2024-07-08

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon ,  Sanjeev Baluja ,  Ashutosh Agarwal

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01L21/687

CPC classification number: C23C16/4412 ,  C23C16/45551 ,  C23C16/4584 ,  H01L21/68764

Abstract: Processing chambers and methods of use comprising a plurality of processing regions bounded around an outer peripheral edge by one or more vacuum channel. A first processing region has a first vacuum channel with a first outer diameter and a second processing region has a second vacuum channel with a second outer diameter, the first outer diameter being less than the second outer diameter.

公开(公告)号：US20240352586A1

公开(公告)日：2024-10-24

申请号：US18761994

申请日：2024-07-02

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon ,  Sanjeev Baluja ,  Michael Robert Rice ,  Arkaprava Dan ,  Hanhong Chen

IPC: C23C16/458 ,  C23C16/455 ,  C23C16/52

CPC classification number: C23C16/4584 ,  C23C16/45544 ,  C23C16/52

Abstract: Apparatus and methods to process one or more substrates are described. A plurality of process stations are arranged in a circular configuration around a rotational axis. A support assembly with a rotatable center base defining a rotational axis, at least two support arms extending from the center base and heaters on each of the support arms is positioned adjacent the processing stations so that the heaters can be moved amongst the various process stations to perform one or more process condition. The support assembly configured to offset the position of the substrate with respect to the processing stations.

公开(公告)号：US20240247373A1

公开(公告)日：2024-07-25

申请号：US18100326

申请日：2023-01-23

Applicant: Applied Materials, Inc.

Inventor： Muhannad Mustafa ,  Sanjeev Baluja

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/458

CPC classification number: C23C16/45517 ,  C23C16/4408 ,  C23C16/45576 ,  C23C16/4584

Abstract: Apparatus and methods for improving deposition uniformity in a cross-flow processing chamber are described. A precursor inlet is configured to allow a cross-flow of precursor from the precursor inlet side of the lid to an exhaust side of the lid opposite a center of the lid from the precursor inlet side. At least one purge gas inlet is in fluid communication with a purge gas channel, the purge gas channel having at least one opening aligned to provide a flow of gas to a center of a substrate in the cross-flow process chamber.