公开(公告)号：US20090166727A1

公开(公告)日：2009-07-02

申请号：US12342721

申请日：2008-12-23

申请人： Markus Zundel ,  Franz Hirler ,  Armin Willmeroth

发明人： Markus Zundel ,  Franz Hirler ,  Armin Willmeroth

IPC分类号： H01L29/78

CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095

摘要： A power semiconductor element having a lightly doped drift and buffer layer is disclosed. One embodiment has, underneath and between deep well regions of a first conductivity type, a lightly doped drift and buffer layer of a second conductivity type. The drift and buffer layer has a minimum vertical extension between a drain contact layer on the adjacent surface of a semiconductor substrate and the bottom of the deepest well region which is at least equal to a minimum lateral distance between the deep well regions. The vertical extension can also be determined such that a total amount of dopant per unit area in the drift and buffer layer is larger then a breakdown charge amount at breakdown voltage.

公开(公告)号：US07459365B2

公开(公告)日：2008-12-02

申请号：US11540922

申请日：2006-09-29

申请人： Michael Rüb ,  Herbert Schäfer ,  Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier ,  Roland Rupp ,  Manfred Pippan ,  Hans Weber ,  Frank Pfirsch ,  Franz Hirler ,  Hans-Joachim Schulze

发明人： Michael Rüb ,  Herbert Schäfer ,  Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier ,  Roland Rupp ,  Manfred Pippan ,  Hans Weber ,  Frank Pfirsch ,  Franz Hirler ,  Hans-Joachim Schulze

IPC分类号： H01L21/336

CPC分类号： H01L29/7813 ,  H01L21/76224 ,  H01L29/0653 ,  H01L29/165 ,  H01L29/66734 ,  H01L29/7804 ,  H01L29/7849

摘要： The fabrication of a semiconductor component having a semiconductor body in which is arranged a very thin dielectric layer having sections which run in the vertical direction and which extend very deeply into the semiconductor body is disclosed. In one method a trench is formed in a drift zone region proceeding from the front side of a semiconductor body, a sacrificial layer is produced on at least a portion of the sidewalls of the trench and at least a portion of the trench is filled with a semiconductor material which is chosen such that the quotient of the net dopant charge of the semiconductor material in the trench and the total area of the sacrificial layer on the sidewalls of the trench between the semiconductor material and the drift zone region is less than the breakdown charge of the semiconductor material, and the sacrificial layer is replaced with a dielectric.

摘要翻译： 公开了具有半导体主体的半导体部件的制造，其中布置有具有在垂直方向上延伸并且非常深地延伸到半导体本体中的截面的非常薄的电介质层。 在一种方法中，在从半导体主体的前侧开始的漂移区域中形成沟槽，在沟槽的至少一部分侧壁上产生牺牲层，并且沟槽的至少一部分填充有 半导体材料被选择为使得沟槽中的半导体材料的净掺杂剂电荷的商和半导体材料和漂移区域之间的沟槽的侧壁上的牺牲层的总面积小于击穿电荷 的半导体材料，并且牺牲层被电介质代替。

公开(公告)号：US20080135871A1

公开(公告)日：2008-06-12

申请号：US11924115

申请日：2007-10-25

申请人： Holger Ruething ,  Frank Pfirsch ,  Armin Willmeroth ,  Frank Hille ,  Hans-Joachim Schulze

发明人： Holger Ruething ,  Frank Pfirsch ,  Armin Willmeroth ,  Frank Hille ,  Hans-Joachim Schulze

IPC分类号： H01L29/739 ,  H01L21/331

CPC分类号： H01L29/0696 ,  H01L21/22 ,  H01L29/083 ,  H01L29/0834 ,  H01L29/36 ,  H01L29/7395 ,  H01L29/7397

摘要： A semiconductor component is disclosed. One embodiment provides a semiconductor body having a cell region with at least one zone of a first conduction type and at least one zone of a second conduction type in a rear side. A drift zone of the first conduction type in the cell region is provided. The drift zone contains at least one region through which charge carriers flow in an operating mode of the semiconductor component in one polarity and charge carriers do not flow in an operating mode of the semiconductor component in an opposite polarity.

摘要翻译： 公开了半导体部件。 一个实施例提供一种半导体本体，其具有在后侧具有至少一个第一导电类型区域和至少一个第二导电类型区域的单元区域。 提供了单元区域中第一导电类型的漂移区。 漂移区包含至少一个区域，电荷载体在半导体组件的工作模式中以一个极性流动，并且电荷载体不以相反极性的半导体组件的工作模式流动。

公开(公告)号：US06940126B2

公开(公告)日：2005-09-06

申请号：US10654683

申请日：2003-09-04

申请人： Gerald Deboy ,  Uwe Wahl ,  Armin Willmeroth

发明人： Gerald Deboy ,  Uwe Wahl ,  Armin Willmeroth

IPC分类号： H01L29/06 ,  H01L29/78 ,  H01L29/808 ,  H01L29/76 ,  H01L21/336

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/7838 ,  H01L29/8083

摘要： A semiconductor component has at least one first terminal zone of a first conductivity type in a semiconductor body. The first terminal zone is contact-connected by a first terminal electrode. A drift zone of the first conductivity type is adjoined by a second terminal zone of the second conductivity type. A channel zone of a second conductivity type is formed between the at least one first terminal zone and the drift zone. A control electrode is insulated from the semiconductor body and adjacent to the channel zone. A first channel is formed by the channel zone in a region adjacent to the control electrode, the first channel conducts only upon application of a control voltage that is not equal to zero between the control electrode and the first terminal zone. The first terminal electrode is connected to the drift zone via at least one second channel of the first conductivity type, which already conducts in the event of a control voltage equal to zero.

公开(公告)号：US20050024925A1

公开(公告)日：2005-02-03

申请号：US10629107

申请日：2003-07-29

申请人： Gerald Deboy ,  Armin Willmeroth

发明人： Gerald Deboy ,  Armin Willmeroth

IPC分类号： G11C11/00 ,  H01L23/62 ,  H01L27/02 ,  H01L29/76 ,  H03K17/08

CPC分类号： H01L27/0248

摘要： The invention relates to a configuration for generating a low-voltage signal proportional to the high voltage present between the source and the drain of a power transistor. For this purpose, a capacitive voltage divider including the source-gate capacitance serving as a low-voltage tap and the source-drain capacitance serving as a high-voltage element is situated in a voltage sense region.

摘要翻译： 本发明涉及一种用于产生与功率晶体管的源极和漏极之间存在的高电压成比例的低电压信号的配置。 为此，包括用作低电压抽头的源极 - 栅极电容和用作高电压元件的源极 - 漏极电容的电容分压器位于电压感测区域中。

公开(公告)号：US08698229B2

公开(公告)日：2014-04-15

申请号：US13118928

申请日：2011-05-31

申请人： Armin Willmeroth ,  Franz Hirler

发明人： Armin Willmeroth ,  Franz Hirler

IPC分类号： H01L29/66

CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42356 ,  H01L29/7803 ,  H01L29/7831

摘要： Disclosed is a MOSFET including at least one transistor cell. The at least one transistor cell includes a source region, a drain region, a body region and a drift region. The body region is arranged between the source region and the drift region and the drift region is arranged between the body region and the drain region. The at least one transistor cell further includes a compensation region arranged in the drift region and distant to the body region, a source electrode electrically contacting the source region and the body region, a gate electrode arranged adjacent the body region and dielectrically insulated from the body region by a gate dielectric, and a coupling arrangement including a control terminal. The coupling arrangement is configured to electrically couple the compensation region to at least one of the body region, the source region, the source electrode and the gate electrode dependent on a control signal received at the control terminal.

摘要翻译： 披露了包括至少一个晶体管单元的MOSFET。 所述至少一个晶体管单元包括源极区，漏极区，体区和漂移区。 体区域布置在源极区域和漂移区域之间，并且漂移区域布置在体区域和漏极区域之间。 所述至少一个晶体管单元还包括布置在所述漂移区域中并且远离所述体区域的补偿区域，与所述源极区域和所述体区域电接触的源电极，邻近所述体区域布置并与所述主体电介质绝缘的栅电极 区域，以及包括控制端子的耦合装置。 耦合装置被配置为根据在控制端接收到的控制信号将补偿区域电耦合到体区域，源极区域，源电极和栅电极中的至少一个。

公开(公告)号：US08643086B2

公开(公告)日：2014-02-04

申请号：US13367909

申请日：2012-02-07

申请人： Frank Dieter Pfirsch ,  Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier

发明人： Frank Dieter Pfirsch ,  Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier

IPC分类号： H01L29/78

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4916 ,  H01L29/66734 ,  H01L29/7803 ,  H01L29/7804 ,  H01L29/7813 ,  H01L29/872

摘要： A semiconductor component having a semiconductor body is disclosed. In one embodiment, the semiconductor component includes a drift zone of a first conductivity type, a drift control zone composed of a semiconductor material which is arranged adjacent to the drift zone at least in places, a dielectric which is arranged between the drift zone and the drift control zone at least in places. A quotient of the net dopant charge of the drift control zone, in an area adjacent to the accumulation dielectric and the drift zone, divided by the area of the dielectric arranged between the drift control zone and the drift zone is less than the breakdown charge of the semiconductor material in the drift control zone.

摘要翻译： 公开了一种具有半导体本体的半导体部件。 在一个实施例中，半导体部件包括第一导电类型的漂移区，由半导体材料构成的漂移控制区，该半导体材料至少位于与漂移区相邻的位置处，布置在漂移区和 漂移控制区至少在地方。 漂移控制区的净掺杂剂电荷在与积聚电介质和漂移区相邻的区域除以布置在漂移控制区和漂移区之间的介质的面积除以小于 漂移控制区中的半导体材料。

公开(公告)号：US20140002145A1

公开(公告)日：2014-01-02

申请号：US13534003

申请日：2012-06-27

申请人： Anton Mauder ,  Armin Willmeroth

发明人： Anton Mauder ,  Armin Willmeroth

IPC分类号： H03K3/015

CPC分类号： H03K17/06

摘要： In various embodiments, a driving circuit for a transistor is provided. The driving circuit may include a transistor including a control terminal; a capacitance; a first switch and a power source, wherein the first switch may be coupled between the power source and a first terminal of the capacitance; a second switch and an inductance which may be coupled in series between the first terminal of the capacitance and the control terminal of the transistor.

摘要翻译： 在各种实施例中，提供了一种用于晶体管的驱动电路。 驱动电路可以包括：包括控制端子的晶体管; 电容; 第一开关和电源，其中所述第一开关可以耦合在所述电源和所述电容的第一端之间; 可以串联耦合在电容的第一端和晶体管的控制端之间的第二开关和电感。

公开(公告)号：US08421147B2

公开(公告)日：2013-04-16

申请号：US12976107

申请日：2010-12-22

申请人： Armin Willmeroth ,  Michael Treu

发明人： Armin Willmeroth ,  Michael Treu

IPC分类号： H01L29/66

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/4238 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813

摘要： A MOS transistor having an increased gate-drain capacitance is described. One embodiment provides a drift zone of a first conduction type. At least one transistor cell has a body zone, a source zone separated from the drift zone by the body zone, and a gate electrode, which is arranged adjacent to the body zone and which is dielectrically insulated from the body zone by a gate dielectric. At least one compensation zone of the first conduction type is arranged in the drift zone. At least one feedback electrode is arranged at a distance from the body zone, which is dielectrically insulated from the drift zone by a feedback dielectric and which is electrically conductively connected to the gate electrode.

摘要翻译： 描述了具有增加的栅 - 漏电容的MOS晶体管。 一个实施例提供了第一导电类型的漂移区。 至少一个晶体管单元具有体区，通过体区与漂移区分离的源极区以及邻近体区设置并通过栅介质与体区介电绝缘的栅电极。 在漂移区域中布置有至少一个第一导电类型的补偿区域。 至少一个反馈电极被布置在与身体区隔一定距离处，该区域通过反馈电介质与漂移区介电绝缘，并且与电极导电连接。

公开(公告)号：US08193584B2

公开(公告)日：2012-06-05

申请号：US12164630

申请日：2008-06-30

申请人： Anton Mauder ,  Stefan Sedlmaier ,  Armin Willmeroth

发明人： Anton Mauder ,  Stefan Sedlmaier ,  Armin Willmeroth

IPC分类号： H01L29/76

CPC分类号： H01L29/7813 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/7803 ,  H01L29/7804 ,  H01L29/7811

摘要： A semiconductor component including a drift zone and a drift control zone. One embodiment provides a transistor component having a drift zone, a body zone, a source zone and a drain zone. The drift zone is arranged between the body zone and the drain zone. The body zone is arranged between the source zone and the drift zone.

摘要翻译： 包括漂移区和漂移控制区的半导体组件。 一个实施例提供了具有漂移区，体区，源区和排水区的晶体管组件。 漂移区布置在身体区域和排水区之间。 身体区域布置在源区和漂移区之间。