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    Non-hydroquinone photographic developer composition with lith quality and its method of usage
    71.
    依法登记的发明
    Non-hydroquinone photographic developer composition with lith quality and its method of usage 失效

    公开(公告)号：USH2048H1

    公开(公告)日：2002-09-03

    申请号：US08388600

    申请日：1995-02-14

    申请人： Haixing Wan ,  Diane Zhang ,  David Carlson ,  Alan A. Bornstein

    发明人： Haixing Wan ,  Diane Zhang ,  David Carlson ,  Alan A. Bornstein

    IPC分类号： G03C518

    摘要： A non-hydroquinone photographic developer composition comprising: (a) a developer selected from the group consisting of ascorbic acid and sugar-type derivatives thereof, or alkali metal salts and mixtures thereof, in an amount of 0.1 to 0.4 mol/liter (mol/l); (b) an effective amount of an auxiliary developing agent comprising a 3-pyrazolidone compound, an aminophenol or a mixture thereof; (c) an alkali metal sulfite in an amount less than or equal to 0.32 mol/l; (d) an alkali metal carbonate in an amount of 0.1 to 0.4 mol/l; (e) an alkali metal hydroxide in an amount of from 0.08 to 2.0 mols/l; (f) with the developer composition having a pH of 11.8 or higher at 25° C.; and (g) the developer composition does not contain an alkanolamine or contains an alkanolamine in an amount of less than 5 g/l; where the developer composition is useful for processing standard rapid access films while showing an especially advantageous effect in the processing of silver halide emulsions containing a hydrazine compound to achieve lith quality, and high dot quality in a stable development solution.

    Halogen lamp assembly with integrated heat sink
    73.
    发明授权
    Halogen lamp assembly with integrated heat sink 有权
    卤素灯组件，集成散热器

    公开(公告)号：US07522822B2

    公开(公告)日：2009-04-21

    申请号：US10752145

    申请日：2004-01-06

    申请人： Robert Trujillo ,  Roger Anderson ,  David Carlson ,  Michael Hale

    发明人： Robert Trujillo ,  Roger Anderson ,  David Carlson ,  Michael Hale

    IPC分类号： A21B2/00

    CPC分类号： H01L21/67115 ,  H01K1/58

    摘要： A halogen lamp assembly 20 for a substrate processing chamber 100 has a halogen lamp 22 and a ceramic heat sink monolith 24. The halogen lamp 22 includes a filament 28 and a pair of electrical connectors 30 encapsulated in an envelope 26 having a pinch seal end 34. The ceramic heat sink monolith 24 includes a block 38 and an array of spaced apart posts 40 projecting outwardly from the block 38. The block 38 includes a cavity 42 that has a recessed inner surface 44 shaped to mate with the pinch seal end 34 of the lamp 22 and an opening that allows the electrical connectors 30 of the halogen lamp 22 to pass through.

    摘要翻译： 用于衬底处理室100的卤素灯组件20具有卤素灯22和陶瓷散热器整体24.卤素灯22包括细丝28和一对电连接器30，该电连接器30封装在具有夹紧密封端34的封套26中 陶瓷散热器整料24包括块38和从块38向外突出的间隔开的柱40的阵列。块38包括空腔42，凹部42具有凹陷的内表面44，该内表面44成形为与挤压密封端34配合 灯22和允许卤素灯22的电连接器30通过的开口。

    SILICON-CONTAINING LAYER DEPOSITION WITH SILICON COMPOUNDS
    74.
    发明申请
    SILICON-CONTAINING LAYER DEPOSITION WITH SILICON COMPOUNDS 有权
    含硅化合物的硅含量沉积

    公开(公告)号：US20080102218A1

    公开(公告)日：2008-05-01

    申请号：US11969139

    申请日：2008-01-03

    申请人： Paul Comita ,  Lance Scudder ,  David Carlson

    发明人： Paul Comita ,  Lance Scudder ,  David Carlson

    IPC分类号： B05D3/00

    CPC分类号： C07F7/0896 ,  C01B33/04 ,  C01B33/107 ,  C07F7/12 ,  C23C16/24 ,  C23C16/30

    摘要： Methods for depositing a silicon-containing film are described. The methods may include delivering a silicon compound to a surface or a substrate, and reacting the silicon compound to grow the silicon-containing film. The silicon compound may be one or more compounds having a formula selected from the group Si4X8, Si4X10, Si5X10, and Si5X12, where X is independently a hydrogen or halogen.

    摘要翻译： 描述了沉积含硅膜的方法。 所述方法可以包括将硅化合物递送到表面或基底，并使硅化合物反应生长含硅膜。 硅化合物可以是一种或多种具有选自下列化学式的化合物：Si 4 S 8 S 8，Si 4 X 10， / SUB，Si 5 X 10和Si 5 X 12，其中X独立地是氢或 卤素。

    CLUSTERING OF RECORDED PATIENT NEUROLOGICAL ACTIVITY TO DETERMINE LENGTH OF A NEUROLOGICAL EVENT
    75.
    发明申请
    CLUSTERING OF RECORDED PATIENT NEUROLOGICAL ACTIVITY TO DETERMINE LENGTH OF A NEUROLOGICAL EVENT 有权
    记录患者神经活动的聚集，以确定神经病学活动的长度

    公开(公告)号：US20080064934A1

    公开(公告)日：2008-03-13

    申请号：US11837987

    申请日：2007-08-13

    申请人： Mark Frei ,  Ivan Osorio ,  Nina Graves ,  Scott Schaffner ,  Mark Rise ,  Jonathon Giftakis ,  David Carlson

    发明人： Mark Frei ,  Ivan Osorio ,  Nina Graves ,  Scott Schaffner ,  Mark Rise ,  Jonathon Giftakis ,  David Carlson

    IPC分类号： A61B5/00 ,  A61M5/00 ,  A61N1/36

    CPC分类号： A61M5/1723 ,  A61B5/04001 ,  A61B5/0476 ,  A61B5/4094 ,  A61B5/6843 ,  A61B5/721 ,  A61N1/36025 ,  A61N1/36064 ,  A61N1/36082 ,  A61N1/361

    摘要： Apparatus and method detect a detection cluster that is associated with a neurological event, such as a seizure, of a nervous system disorder and update therapy parameters that are associated with a treatment therapy. The occurrence of the detection cluster is detected when the maximal ratio exceeds an intensity threshold. If the maximal ratio drops below the intensity threshold for a time interval that is less than a time threshold and subsequently rises above the intensity threshold, the subsequent time duration is considered as being associated with the detection cluster rather than being associated with a different detection cluster. Consequently, treatment of the nervous system disorder during the corresponding time period is in accordance with one detection cluster. Treatment therapy may be provided by providing electrical stimulation, drug infusion or a combination. Therapy parameters may be updated for each mth successive group of applications of the treatment therapy or for each nth detection cluster.

    摘要翻译： 装置和方法检测与神经系统疾病的神经系统事件（例如癫痫发作），与治疗疗法相关联的更新治疗参数相关联的检测簇。 当最大比例超过强度阈值时，检测到簇的出现。 如果最小比率在低于时间阈值的时间间隔下降到低于强度阈值，并且随后升高到强度阈值以上，则后续持续时间被认为与检测集群相关联，而不是与不同的检测集群相关联 。 因此，在相应时间段期间治疗神经系统疾病是根据一个检测群。 可以通过提供电刺激，药物输注或组合来提供治疗治疗。 治疗参数可以针对治疗疗法的每个连续的应用组或每个第n个检测簇进行更新。

    UV assisted low temperature epitaxial growth of silicon-containing films
    80.
    发明申请
    UV assisted low temperature epitaxial growth of silicon-containing films 审中-公开
    UV辅助低温外延生长的含硅膜

    公开(公告)号：US20070232031A1

    公开(公告)日：2007-10-04

    申请号：US11805428

    申请日：2007-05-22

    申请人： Kaushal Singh ,  David Carlson ,  Manish Hemkar ,  Satheesh Kuppurao ,  Randhir Thakur

    发明人： Kaushal Singh ,  David Carlson ,  Manish Hemkar ,  Satheesh Kuppurao ,  Randhir Thakur

    IPC分类号： H01L21/20

    CPC分类号： H01L21/0262 ,  C23C16/482 ,  C30B25/105 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02661

    摘要： A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.

    摘要翻译： 一种制备用于覆盖或选择性外延沉积含硅和/或含锗膜的清洁衬底表面的方法。 此外，生长含硅和/或含锗膜的方法，其中基板清洗方法和膜生长方法都在低于750℃的温度下进行，通常在约700℃的温度下进行 ℃至约500℃。清洁方法和膜生长方法在其中生长含硅膜的处理体积中使用波长为约310nm至约120nm的辐射。 将该辐射与用于反应性清洁或成膜组分物质的特定分压范围的组合的使用使得能够在低于工业以前已知的温度下进行基材清洗和外延膜生长。