摘要:
In an electronic device having a light emitting section that emits light by utilizing recombination of electrons and holes and in a light emission control method for this electronic device, an electronic device and a light emission control method for this electronic device are provided in which lifetime improvement is achieved in the light emitting section.An electronic device and a light emission control method for the electronic device, the electronic device including: a light emitting section that emits light by utilizing recombination of electrons and holes; and a driving section that inputs to the light emitting section a pulse-shaped driving signal having a duty ratio higher than or equal to 0.7 and lower than 1.0 and thereby causes the light emitting section to emit light intermittently, wherein when an electron density is denoted by n, a hole density is denoted by p, a thermal velocity of electrons is denoted by vth:n, a thermal velocity of holes is denoted by vth:p, an electron capture cross section of a defect level present in the light emitting section is denoted by σn, a hole capture cross section of a defect level present in the light emitting section is denoted by σp, and a pulse width of the driving signal is denoted by W, the driving section inputs to the light emitting section the driving signal having a pulse width W that satisfies W
摘要翻译:在具有通过利用电子和空穴的复合发光的发光部的电子设备中,在该电子设备的发光控制方法中,提供了一种电子设备和该电子设备的发光控制方法,其中寿命改善 在发光部分实现。 一种电子设备的电子设备和发光控制方法,所述电子设备包括:通过利用电子和空穴的复合发光的发光部分; 以及驱动部,其向所述发光部输入占空比高于或等于0.7且低于1.0的脉冲状驱动信号,从而使所述发光部分间歇地发光,其中当表示电子密度时 由n表示孔密度,以v表示电子的热速度,vth:n表示空穴的热速度,vth:p表示存在于发光部中的缺陷水平的电子捕获截面 由&sgr; n表示,发光部分中存在的缺陷电平的空穴捕获截面由&sgr; p表示,驱动信号的脉冲宽度由W表示,驱动部分输入到发光部分 将具有满足W <1 / {n·vth:n·&sgr; n·p·vth:p·&sgr; p /(n·vth:n·&sgr; n + p·vth)的脉冲宽度W的驱动信号 :p·&sgr; p)}。
摘要:
An oxide interface and a method for fabricating an oxide interface are provided. The method comprises forming a silicon layer and an oxide layer overlying the silicon layer. The oxide layer is formed at a temperature of less than 400° C. using an inductively coupled plasma source. In some aspects of the method, the oxide layer is more than 20 nanometers (nm) thick and has a refractive index between 1.45 and 1.47. In some aspects of the method, the oxide layer is formed by plasma oxidizing the silicon layer, producing plasma oxide at a rate of up to approximately 4.4 nm per minute (after one minute). In some aspects of the method, a high-density plasma enhanced chemical vapor deposition (HD-PECVD) process is used to form the oxide layer. In some aspects of the method, the silicon and oxide layers are incorporated into a thin film transistor.
摘要:
A voltage regulator circuit includes a regulator circuit and a short-circuit protection circuit. The regulator circuit includes a first transistor and a first amplifier. The first amplifier outputs a gate voltage to a gate of the first transistor in response to a reference potential and a feedback potential such that the feedback potential coincides with the reference potential. The feedback potential is a fed back potential from the first transistor. The short-circuit protection circuit includes a second transistor, a first resistance, a second resistance and a second amplifier. The gate voltage is supplied to a gate of the second transistor. The first resistance connects a first terminal of the second transistor with a ground. The second resistance connects a second terminal of the second transistor with a power source. The second amplifier outputs a control voltage to the first amplifier in response to a bias potential and a potential of the first terminal to control the gate voltage.
摘要:
A method is provided for fabricating a thin film oxide. The method include forming a first silicon layer, applying a second silicon layer overlying the first silicon layer, oxidizing the second silicon layer at a temperature of less than 400° C. using an inductively coupled plasma source, and forming a thin film oxide layer overlying the first silicon layer. In some cases, the thin film oxide layer overlies the oxidized second silicon layer and is formed by a high-density plasma enhanced chemical vapor deposition process and an inductively coupled plasma source at a temperature of less than 400° C. In some cases, the thin film oxide layer and the first silicon layer are incorporated into a thin film transistor and the thin film oxide layer has a fixed oxide charge density of 3×1011 per square centimeter.
摘要:
A projection image display device includes, a light source, an image display panel having a number of pixels and a vertical scanning function, an optical system for dividing light from the light source into a plurality of lights of different wave ranges and directing and overlapping the divided plural lights onto an area from different directions, a light-collector for collecting each of the plural divided lights directed onto the area by the optical system into apertures of pixels of the image display panel corresponding to the wave range of the light, a projector for projecting an image displayed on the image display panel, and a color-changer for mutually changing, at every vertical scanning of the image display panel, the directions in which the optical system directs the plural divided lights of the different wave ranges, so as to mutually change the wave ranges of light directed to the pixels of the image display panel sequentially. The image display panel displays an image with each of the pixels displaying a color of the wave range of light directed to the pixel at every change by the color-changer.
摘要:
The semiconductor device of this invention includes a substrate having an insulating surface and a thin film transistor formed on the substrate, wherein the thin film transistor has a semiconductor island including a channel region and source/drain regions, a gate insulating film formed on the semiconductor island and a gate electrode covering the channel region of the semiconductor island interposing the gate insulating film therebetween, and wherein a distance between an edge of the channel region of the semiconductor island and the gate electrode is larger then a distance between a central portion of the channel region of the semiconductor island and the gate electrode.
摘要:
A reflective type display apparatus having a plurality of pixels includes: a first substrate; a second substrate provided in parallel to the first substrate, the second substrate being transparent to external light; a plurality of transparent pixel electrodes formed on the first substrate; a transparent counter electrode layer formed on the second substrate; a light modulating layer for modulating the external light in accordance with voltages between the plurality of transparent pixel electrodes and the transparent counter electrode, the light modulating layer being interposed between the plurality of transparent pixel electrodes and the transparent counter electrode; wherein a light scattering layer in which fine particles are dispersed in a matrix is interposed between the plurality of transparent pixel electrodes and the first substrate, the light scattering layer scatters the external light.
摘要:
A weft picking system for an air jet loom provided with a microcomputer as a controller. The weft picking system comprises a weft traction device including a pair of rollers one of which is driven by an inverter motor. A weft yarn fed from a weft measuring and storing device can be put between the rollers to be drawn toward a weft posture regulating nozzle. The weft posture regulating nozzle is arranged to project the weft yarn into the shed of warp yarns while regulating the posture of the weft yarn, under the influence of an air jet ejected therefrom and under assistance of air ejection from a plurality of sub-nozzles. The rollers are always driven to rotate during a weaving operation of the loom. A change-over device is provided to change the weft yarn from a first state of being put between the rollers to a second state of separating from the rollers or vice versa. The changing from the second state to the first state of the weft yarn is made after the starting of ejection of the fluid jet from the weft posture regulating nozzle in a weft picking cycle thereby preventing the weft yarn from being slackened in a location between the weft traction device and the weft posture regulating nozzle.
摘要:
A method of removing a binder from a green body capable of accomplishing the binder removal at a substantially reduced temperature and in a significantly reduced period of time. The binder mainly consists of a polymer material of ultraviolet degradation properties such as, for example, a polymer material having a main chain containing a tertiary carbon atom. The green body is irradiated with ultraviolet rays at a temperature within the range of 150.degree. C. to 300.degree. C. under an atmospheric pressure to rapidly carry out the photo degradation of the polymer material by ultraviolet rays, so that the binder may be readily removed from the green body.
摘要:
A device for detecting any failure in a plurality of loads connected in parallel with one another comprises an indicator lamp connected in series with first and second magnetically operable switching elements. A control circuit comprising first and second coils associated, respectively, with the first and second switching elements is connected in series between a DC power source and the parallel connected loads. A third coil associated with the first switching element and producing a magnetic field opposing that of the first coil is connected in series with a resistor across the power source. A zener diode in series with a resistance is connected in parallel with the third coil. The sensitivities of the first and second switching elements and the coil constants are adjusted so that the first switching element is opened only when the number of the load failures is between 1 and K-1, where K is an integer between 2 and n, while the second switching element is opened only when at least K loads fail on condition that the intensity of the composite magnetic field produced by the first and third coils is close to zero when the number of the load failures is K-1.