Electronic Device and Light Emission Control Method For Electronic Device
    71.
    发明申请
    Electronic Device and Light Emission Control Method For Electronic Device 有权
    电子设备电子设备和发光控制方法

    公开(公告)号:US20100156311A1

    公开(公告)日:2010-06-24

    申请号:US11992592

    申请日:2008-02-04

    IPC分类号: H05B37/02

    CPC分类号: H05B33/0848 H05B33/089

    摘要: In an electronic device having a light emitting section that emits light by utilizing recombination of electrons and holes and in a light emission control method for this electronic device, an electronic device and a light emission control method for this electronic device are provided in which lifetime improvement is achieved in the light emitting section.An electronic device and a light emission control method for the electronic device, the electronic device including: a light emitting section that emits light by utilizing recombination of electrons and holes; and a driving section that inputs to the light emitting section a pulse-shaped driving signal having a duty ratio higher than or equal to 0.7 and lower than 1.0 and thereby causes the light emitting section to emit light intermittently, wherein when an electron density is denoted by n, a hole density is denoted by p, a thermal velocity of electrons is denoted by vth:n, a thermal velocity of holes is denoted by vth:p, an electron capture cross section of a defect level present in the light emitting section is denoted by σn, a hole capture cross section of a defect level present in the light emitting section is denoted by σp, and a pulse width of the driving signal is denoted by W, the driving section inputs to the light emitting section the driving signal having a pulse width W that satisfies W

    摘要翻译: 在具有通过利用电子和空穴的复合发光的发光部的电子设备中,在该电子设备的发光控制方法中,提供了一种电子设备和该电子设备的发光控制方法,其中寿命改善 在发光部分实现。 一种电子设备的电子设备和发光控制方法,所述电子设备包括:通过利用电子和空穴的复合发光的发光部分; 以及驱动部,其向所述发光部输入占空比高于或等于0.7且低于1.0的脉冲状驱动信号,从而使所述发光部分间歇地发光,其中当表示电子密度时 由n表示孔密度,以v表示电子的热速度,vth:n表示空穴的热速度,vth:p表示存在于发光部中的缺陷水平的电子捕获截面 由&sgr; n表示,发光部分中存在的缺陷电平的空穴捕获截面由&sgr; p表示,驱动信号的脉冲宽度由W表示,驱动部分输入到发光部分 将具有满足W <1 / {n·vth:n·&sgr; n·p·vth:p·&sgr; p /(n·vth:n·&sgr; n + p·vth)的脉冲宽度W的驱动信号 :p·&sgr; p)}。

    Thin film oxide interface
    72.
    发明授权
    Thin film oxide interface 失效
    薄膜氧化物界面

    公开(公告)号:US07196383B2

    公开(公告)日:2007-03-27

    申请号:US11046571

    申请日:2005-01-28

    IPC分类号: H01L29/772

    摘要: An oxide interface and a method for fabricating an oxide interface are provided. The method comprises forming a silicon layer and an oxide layer overlying the silicon layer. The oxide layer is formed at a temperature of less than 400° C. using an inductively coupled plasma source. In some aspects of the method, the oxide layer is more than 20 nanometers (nm) thick and has a refractive index between 1.45 and 1.47. In some aspects of the method, the oxide layer is formed by plasma oxidizing the silicon layer, producing plasma oxide at a rate of up to approximately 4.4 nm per minute (after one minute). In some aspects of the method, a high-density plasma enhanced chemical vapor deposition (HD-PECVD) process is used to form the oxide layer. In some aspects of the method, the silicon and oxide layers are incorporated into a thin film transistor.

    摘要翻译: 提供氧化物界面和制造氧化物界面的方法。 该方法包括形成硅层和覆盖硅层的氧化物层。 使用电感耦合等离子体源在低于400℃的温度下形成氧化物层。 在该方法的一些方面,氧化物层的厚度大于20纳米(nm),折射率在1.45和1.47之间。 在该方法的一些方面,通过等离子体氧化硅层形成氧化物层,以每分钟高达约4.4nm的速率产生等离子体氧化物(1分钟后)。 在该方法的某些方面,使用高密度等离子体增强化学气相沉积(HD-PECVD)工艺来形成氧化物层。 在该方法的一些方面,将硅和氧化物层结合到薄膜晶体管中。

    Voltage regulator circuit having short-circuit protection circuit
    73.
    发明申请
    Voltage regulator circuit having short-circuit protection circuit 失效
    稳压电路具有短路保护电路

    公开(公告)号:US20050194949A1

    公开(公告)日:2005-09-08

    申请号:US11072229

    申请日:2005-03-07

    申请人: Masahiro Adachi

    发明人: Masahiro Adachi

    IPC分类号: G05F1/10 G05F1/56 H02M7/5387

    CPC分类号: G05F1/573

    摘要: A voltage regulator circuit includes a regulator circuit and a short-circuit protection circuit. The regulator circuit includes a first transistor and a first amplifier. The first amplifier outputs a gate voltage to a gate of the first transistor in response to a reference potential and a feedback potential such that the feedback potential coincides with the reference potential. The feedback potential is a fed back potential from the first transistor. The short-circuit protection circuit includes a second transistor, a first resistance, a second resistance and a second amplifier. The gate voltage is supplied to a gate of the second transistor. The first resistance connects a first terminal of the second transistor with a ground. The second resistance connects a second terminal of the second transistor with a power source. The second amplifier outputs a control voltage to the first amplifier in response to a bias potential and a potential of the first terminal to control the gate voltage.

    摘要翻译: 电压调节器电路包括调节器电路和短路保护电路。 调节器电路包括第一晶体管和第一放大器。 第一放大器响应于参考电位和反馈电位而将栅极电压输出到第一晶体管的栅极,使得反馈电位与参考电位重合。 反馈电位是第一晶体管的反馈电位。 短路保护电路包括第二晶体管,第一电阻,第二电阻和第二放大器。 栅极电压被提供给第二晶体管的栅极。 第一电阻将第二晶体管的第一端与地连接。 第二电阻将第二晶体管的第二端子与电源连接。 第二放大器响应于偏置电位和第一端子的电位来控制栅极电压而向第一放大器输出控制电压。

    Plasma method for fabricating oxide thin films
    74.
    发明授权
    Plasma method for fabricating oxide thin films 有权
    用于制造氧化物薄膜的等离子体方法

    公开(公告)号:US06689646B1

    公开(公告)日:2004-02-10

    申请号:US10295579

    申请日:2002-11-14

    IPC分类号: H01L2100

    摘要: A method is provided for fabricating a thin film oxide. The method include forming a first silicon layer, applying a second silicon layer overlying the first silicon layer, oxidizing the second silicon layer at a temperature of less than 400° C. using an inductively coupled plasma source, and forming a thin film oxide layer overlying the first silicon layer. In some cases, the thin film oxide layer overlies the oxidized second silicon layer and is formed by a high-density plasma enhanced chemical vapor deposition process and an inductively coupled plasma source at a temperature of less than 400° C. In some cases, the thin film oxide layer and the first silicon layer are incorporated into a thin film transistor and the thin film oxide layer has a fixed oxide charge density of 3×1011 per square centimeter.

    摘要翻译: 提供了制造薄膜氧化物的方法。 该方法包括形成第一硅层,施加覆盖第一硅层的第二硅层,使用电感耦合等离子体源在小于400℃的温度下氧化第二硅层,以及形成覆盖层的薄膜氧化物层 第一硅层。 在一些情况下,薄膜氧化物层覆盖氧化的第二硅层,并且通过高密度等离子体增强化学气相沉积工艺和电感耦合等离子体源在低于400℃的温度下形成。在一些情况下, 薄膜氧化物层和第一硅层结合到薄膜晶体管中,并且薄膜氧化物层具有固定的氧化物电荷密度为3×10 11每平方厘米。

    Projection image display device
    75.
    发明授权
    Projection image display device 失效
    投影图像显示装置

    公开(公告)号:US5969832A

    公开(公告)日:1999-10-19

    申请号:US751889

    申请日:1996-11-18

    摘要: A projection image display device includes, a light source, an image display panel having a number of pixels and a vertical scanning function, an optical system for dividing light from the light source into a plurality of lights of different wave ranges and directing and overlapping the divided plural lights onto an area from different directions, a light-collector for collecting each of the plural divided lights directed onto the area by the optical system into apertures of pixels of the image display panel corresponding to the wave range of the light, a projector for projecting an image displayed on the image display panel, and a color-changer for mutually changing, at every vertical scanning of the image display panel, the directions in which the optical system directs the plural divided lights of the different wave ranges, so as to mutually change the wave ranges of light directed to the pixels of the image display panel sequentially. The image display panel displays an image with each of the pixels displaying a color of the wave range of light directed to the pixel at every change by the color-changer.

    摘要翻译: 投影图像显示装置包括光源,具有多个像素和垂直扫描功能的图像显示面板,用于将来自光源的光分成多个不同波段的光的光学系统,并且引导和重叠 将多个光分成来自不同方向的区域;集光器,用于将由光学系统引导到该区域上的多个分光中的每一个分别聚集到与光的波段相对应的图像显示面板的像素孔中;投影仪 用于投影显示在图像显示面板上的图像,以及用于在图像显示面板的每次垂直扫描时相互改变的颜色更换器,其中光学系统引导不同波段的多个分光的方向,以便 以顺序地相互改变指向图像显示面板的像素的光的波长范围。 图像显示面板显示图像,其中每个像素在每次由颜色变换器改变时显示指向像素的光的波段范围的颜色。

    Semiconductor device with increased distance between channel edges and a
gate electrode
    76.
    发明授权
    Semiconductor device with increased distance between channel edges and a gate electrode 失效
    具有增加通道边缘与栅电极之间距离的半导体器件

    公开(公告)号:US5747828A

    公开(公告)日:1998-05-05

    申请号:US623559

    申请日:1996-03-28

    摘要: The semiconductor device of this invention includes a substrate having an insulating surface and a thin film transistor formed on the substrate, wherein the thin film transistor has a semiconductor island including a channel region and source/drain regions, a gate insulating film formed on the semiconductor island and a gate electrode covering the channel region of the semiconductor island interposing the gate insulating film therebetween, and wherein a distance between an edge of the channel region of the semiconductor island and the gate electrode is larger then a distance between a central portion of the channel region of the semiconductor island and the gate electrode.

    摘要翻译: 本发明的半导体器件包括具有绝缘表面的衬底和形成在衬底上的薄膜晶体管,其中薄膜晶体管具有包括沟道区和源极/漏极区的半导体岛,形成在半导体上的栅极绝缘膜 岛和覆盖半导体岛的沟道区域的栅极电极,其间插入栅极绝缘膜,并且其中半导体岛的沟道区域的边缘与栅电极之间的距离大于所述半导体岛的中心部分之间的距离 沟道区域和栅电极。

    Reflective LCD having a resin-diffuser with dispersed metal oxide
particles between a substrate and pixel electrodes or integral with the
pixel electrodes
    77.
    发明授权
    Reflective LCD having a resin-diffuser with dispersed metal oxide particles between a substrate and pixel electrodes or integral with the pixel electrodes 失效
    具有树脂扩散器的反射LCD,其具有在基板和像素电极之间分散的金属氧化物颗粒或与像素电极成一体

    公开(公告)号:US5548425A

    公开(公告)日:1996-08-20

    申请号:US277109

    申请日:1994-07-20

    摘要: A reflective type display apparatus having a plurality of pixels includes: a first substrate; a second substrate provided in parallel to the first substrate, the second substrate being transparent to external light; a plurality of transparent pixel electrodes formed on the first substrate; a transparent counter electrode layer formed on the second substrate; a light modulating layer for modulating the external light in accordance with voltages between the plurality of transparent pixel electrodes and the transparent counter electrode, the light modulating layer being interposed between the plurality of transparent pixel electrodes and the transparent counter electrode; wherein a light scattering layer in which fine particles are dispersed in a matrix is interposed between the plurality of transparent pixel electrodes and the first substrate, the light scattering layer scatters the external light.

    摘要翻译: 具有多个像素的反射型显示装置包括:第一基板; 与第一基板平行地设置的第二基板,第二基板对于外部光是透明的; 形成在所述第一基板上的多个透明像素电极; 形成在所述第二基板上的透明对置电极层; 光调制层,用于根据多个透明像素电极和透明对电极之间的电压来调制外部光,光调制层插入在多个透明像素电极和透明对电极之间; 其中在所述多个透明像素电极和所述第一基板之间插入有将微粒分散在基质中的光散射层,所述光散射层散射外部光。

    Weft picking system for a fluid jet loom including a roller type
traction device
    78.
    发明授权
    Weft picking system for a fluid jet loom including a roller type traction device 失效
    用于流体喷射织机的纬纱拾取系统,包括滚子式牵引装置

    公开(公告)号:US5335700A

    公开(公告)日:1994-08-09

    申请号:US29661

    申请日:1993-03-10

    IPC分类号: D03D47/34

    CPC分类号: D03D47/34

    摘要: A weft picking system for an air jet loom provided with a microcomputer as a controller. The weft picking system comprises a weft traction device including a pair of rollers one of which is driven by an inverter motor. A weft yarn fed from a weft measuring and storing device can be put between the rollers to be drawn toward a weft posture regulating nozzle. The weft posture regulating nozzle is arranged to project the weft yarn into the shed of warp yarns while regulating the posture of the weft yarn, under the influence of an air jet ejected therefrom and under assistance of air ejection from a plurality of sub-nozzles. The rollers are always driven to rotate during a weaving operation of the loom. A change-over device is provided to change the weft yarn from a first state of being put between the rollers to a second state of separating from the rollers or vice versa. The changing from the second state to the first state of the weft yarn is made after the starting of ejection of the fluid jet from the weft posture regulating nozzle in a weft picking cycle thereby preventing the weft yarn from being slackened in a location between the weft traction device and the weft posture regulating nozzle.

    摘要翻译: 一种用于喷气织机的纬纱拾取系统,其具有作为控制器的微型计算机。 纬纱拾取系统包括一个纬纱牵引装置,该牵引装置包括一对辊,其中一个由逆变电动机驱动。 从纬纱测量和存储装置输送的纬纱可以放置在辊之间,以向纬纱姿势调节喷嘴拉出。 纬纱姿势调节喷嘴布置成在经过喷射的空气喷射的影响下并且在从多个副喷嘴的空气喷射的辅助下,将纬纱投射到经纱的梭口中,同时调节纬纱的姿势。 在织机的织造操作期间,辊总是被驱动旋转。 提供转换装置以将纬纱从放置在辊之间的第一状态改变到与辊分离的第二状态,反之亦然。 在纬纱采摘周期开始从纬纱姿势调节喷嘴喷射流体射流之后,进行纬纱从第二状态向第一状态的变化,由此防止纬纱在纬纱之间的位置松弛 牵引装置和纬纱姿势调节喷嘴。

    Method for removing binder from green body
    79.
    发明授权
    Method for removing binder from green body 失效
    从绿体中去除粘合剂的方法

    公开(公告)号:US4978498A

    公开(公告)日:1990-12-18

    申请号:US480211

    申请日:1990-02-14

    摘要: A method of removing a binder from a green body capable of accomplishing the binder removal at a substantially reduced temperature and in a significantly reduced period of time. The binder mainly consists of a polymer material of ultraviolet degradation properties such as, for example, a polymer material having a main chain containing a tertiary carbon atom. The green body is irradiated with ultraviolet rays at a temperature within the range of 150.degree. C. to 300.degree. C. under an atmospheric pressure to rapidly carry out the photo degradation of the polymer material by ultraviolet rays, so that the binder may be readily removed from the green body.

    摘要翻译: 一种从生坯中去除粘合剂的方法,其能够在显着降低的温度和显着减少的时间内完成粘合剂的除去。 粘合剂主要由紫外线降解性能的聚合物材料组成,例如具有含有叔碳原子的主链的聚合物材料。 在大气压下在150℃〜300℃的温度范围内用紫外线照射生坯,通过紫外线快速进行聚合物材料的光降解,使粘合剂容易 从绿色身体移除。

    Device for indicating any wire breaking in parallel connected plural
loads
    80.
    发明授权
    Device for indicating any wire breaking in parallel connected plural loads 失效
    用于指示任何断线并联连接多个负载的装置

    公开(公告)号:US4023153A

    公开(公告)日:1977-05-10

    申请号:US659361

    申请日:1976-02-19

    申请人: Masahiro Adachi

    发明人: Masahiro Adachi

    CPC分类号: B60Q11/00

    摘要: A device for detecting any failure in a plurality of loads connected in parallel with one another comprises an indicator lamp connected in series with first and second magnetically operable switching elements. A control circuit comprising first and second coils associated, respectively, with the first and second switching elements is connected in series between a DC power source and the parallel connected loads. A third coil associated with the first switching element and producing a magnetic field opposing that of the first coil is connected in series with a resistor across the power source. A zener diode in series with a resistance is connected in parallel with the third coil. The sensitivities of the first and second switching elements and the coil constants are adjusted so that the first switching element is opened only when the number of the load failures is between 1 and K-1, where K is an integer between 2 and n, while the second switching element is opened only when at least K loads fail on condition that the intensity of the composite magnetic field produced by the first and third coils is close to zero when the number of the load failures is K-1.

    摘要翻译: 用于检测彼此并联连接的多个负载中的任何故障的装置包括与第一和第二可操作的可开关元件串联连接的指示灯。 包括分别与第一和第二开关元件相关联的第一和第二线圈的控制电路串联连接在DC电源和并联连接的负载之间。 与第一开关元件相关联并产生与第一线圈相反的磁场的第三线圈与电源串联连接在电源上。 与电阻串联的齐纳二极管与第三线圈并联连接。 调整第一和第二开关元件和线圈常数的灵敏度,使得第一开关元件仅当负载故障的数量在1和K-1之间时断开,其中K是在2和n之间的整数,而 只有当负载故障次数为K-1时,由第1线圈和第3线圈产生的复合磁场的强度接近零的情况下,至少K个负载故障才能使第2开关元件断开。