摘要:
A one transistor DRAM device includes: a substrate with an insulating layer, a first semiconductor layer provided on the insulating layer and including a first source region and a first region which are in contact with the insulating layer and a first floating body between the first source region and the first drain region, a first gate pattern to cover the first floating body, a first interlayer dielectric to cover the first gate pattern, a second semiconductor layer provided on the first interlayer dielectric and including a second source region and a second drain region which are in contact with the first interlayer dielectric and a second floating body between the second source region and the second drain region, and a second gate pattern to cover the second floating body.
摘要:
A flash memory device includes a plurality of memory blocks. A selected memory block among the plurality of memory blocks includes 2n pages of data. The selected memory block includes different types of memory cells capable of storing different numbers of bits.
摘要:
A memory device may include L semiconductor layers, a gate structure on each of the semiconductor layers, N bitlines, and/or a common source line on each of the semiconductor layers. The L semiconductor layers may be stacked, and/or L may be an integer greater than 1. The N bitlines may be on the gate structures and crossing over the gate structures, and/or N may be an integer greater than 1. Each of the common source lines may be connected to each other such that the common source lines have equipotentiality with each other.
摘要:
Methods for setting a read voltage in a memory system which comprises a flash memory device and a memory controller for controlling the flash memory device, comprise sequentially varying a distribution read voltage to read page data from the flash memory device; constituting a distribution table having a data bit number and a distribution read voltage, the data bit number indicating an erase state among the page data respectively read from the flash memory device and the distribution read voltage corresponding to the read page data; detecting distribution read voltages corresponding to data bit numbers each indicating maximum points of possible cell states of a memory cell, based on the distribution table; and defining new read voltages based on the detected distribution read voltages.
摘要:
The present invention provides a flash memory device that includes a word line; even page cells that are physically adjacent and connected to the word line; and odd page cells that are physically adjacent and connected to the word line, wherein at a program operation, page data is programmed in either one of the even page cells or the odd page cells.
摘要:
A phase change memory device and a method of fabricating the same are disclosed. The phase change memory device includes a first conductor pattern having a first conductivity type and a sidewall. A second conductor pattern is connected to the sidewall of the first conductor pattern to form a diode. A phase change layer is electrically connected to the second conductor pattern and a top electrode is connected to the phase change layer.
摘要:
A flash memory device comprises an array of memory cells capable of storing different numbers of bits per cell. A page buffer circuit for the flash memory device comprises a plurality of page buffers, each operating during programming, erasing, and reading operations of the memory cells. A control logic unit controls functions of the page buffers in accordance with the number of bits stored in corresponding memory cells.
摘要:
A phase change memory device includes a mold layer disposed on a substrate, a heating electrode, a filling insulation pattern and a phase change material pattern. The heating electrode is disposed in an opening exposing the substrate through the mold layer. The heating electrode is formed in a substantially cylindrical shape, having its sidewalls conformally disposed on the lower inner walls of the opening. The filling insulation pattern fills an empty region surrounded by the sidewalls of the heating electrode. The phase change material pattern is disposed on the mold layer and downwardly extended to fill the empty part of the opening. The phase change material pattern contacts the top surfaces of the sidewalls of the heating electrode.
摘要:
Disclosed is a method of verifying a programmed condition of a flash memory device, being comprised of: determining a level of an additional verifying voltage in response to the number of programming/erasing cycles of memory cells; conducting a verifying operation to programmed memory cells with an initial verifying voltage lower than the additional verifying voltage; and selectively conducting an additional verifying operation with the additional verifying voltage to the program-verified memory cells in response to the number of programming/erasing cycles.
摘要:
A flash memory device comprises an array of memory cells capable of storing different numbers of bits per cell. A page buffer circuit for the flash memory device comprises a plurality of page buffers, each operating during programming, erasing, and reading operations of the memory cells. A control logic unit controls functions of the page buffers in accordance with the number of bits stored in corresponding memory cells.