公开(公告)号：US11072767B2

公开(公告)日：2021-07-27

申请号：US16774220

申请日：2020-01-28

Applicant: FUJIFILM Corporation

Inventor： Tomonori Takahashi ,  Tetsuya Kamimura

IPC: C11D7/32 ,  C11D7/50 ,  C11D11/00 ,  H01L21/02

Abstract: A treatment liquid for a semiconductor device is a treatment liquid including water, an organic solvent, and two or more nitrogen-containing aromatic heterocyclic compounds.

公开(公告)号：US10401726B2

公开(公告)日：2019-09-03

申请号：US15288588

申请日：2016-10-07

Applicant: FUJIFILM Corporation

Inventor： Hirotaka Takishita ,  Tetsuya Kamimura ,  Hirokazu Kyota ,  Toshihide Ezoe ,  Kazuto Shimada

IPC: G03F7/00 ,  G02F1/361 ,  C08F2/44 ,  C08L101/00 ,  C09B67/46 ,  G02B5/22 ,  G03F7/004 ,  G03F7/029 ,  G03F7/039 ,  G03F7/16 ,  G03F7/20 ,  G03F7/30 ,  C08F2/48 ,  C09D4/00 ,  C09B67/00 ,  C09B67/22 ,  G03F7/027 ,  G03F7/105 ,  G02B5/20 ,  H01L27/146

Abstract: A coloring composition includes colorants, polymerizable compounds, and a resin, in which a ratio P/M of a mass P of the colorants to a mass M of the polymerizable compounds is 0.05 to 0.35, a content of the polymerizable compounds is 25 to 65 mass % with respect to a total solid content of the coloring composition, a ratio A/B of a minimum value A of an absorbance in a wavelength range of 400 nm or longer and shorter than 580 nm to a minimum value B of an absorbance in a wavelength range of 580 nm to 770 nm is 0.3 to 3, and a ratio C/D of a minimum value C of an absorbance in a wavelength range of 400 nm to 750 nm to a maximum value D of an absorbance in a wavelength range of 850 nm to 1300 nm is 5 or higher.

公开(公告)号：US10241247B2

公开(公告)日：2019-03-26

申请号：US15614742

申请日：2017-06-06

Applicant: FUJIFILM Corporation

Inventor： Yoshinori Taguchi ,  Tetsuya Kamimura ,  Akiko Yoshii

IPC: G02B5/20 ,  G03F7/004 ,  G02B5/22 ,  C09B29/33 ,  C09B57/04 ,  G03F7/033 ,  C08G18/32 ,  C08G18/34 ,  G03F7/032 ,  G03F7/038 ,  C08G18/81 ,  C09B67/22 ,  C08G18/28 ,  G03F7/00 ,  G03F7/105 ,  G02F1/1335

Abstract: A coloring composition includes Color Index Pigment Red 264, a graft resin having an acid group, a photopolymerizable compound, and a photopolymerization initiator.

公开(公告)号：US09548217B2

公开(公告)日：2017-01-17

申请号：US14711070

申请日：2015-05-13

Applicant: FUJIFILM CORPORATION

Inventor： Naotsugu Muro ,  Tetsuya Kamimura ,  Tadashi Inaba ,  Atsushi Mizutani

IPC: H01L21/461 ,  H01L21/3213 ,  H01L21/311 ,  C09K13/08

CPC classification number: H01L21/32134 ,  C09K13/08 ,  H01L21/31144

Abstract: An etching method containing, at the time of processing a substrate having a first layer containing titanium nitride (TiN) and a second layer containing a transition metal, selecting a substrate in which a surface oxygen content of the first layer is from 0.1 to 10% by mole, and applying an etching liquid containing a hydrofluoric acid compound and an oxidizing agent to the substrate and thereby removing the first layer.

Abstract translation: 一种蚀刻方法，其特征在于，在具有含有氮化钛（TiN）的第一层和含有过渡金属的第二层的基板的处理时，选择其中第一层的表面氧含量为0.1〜10％ 并将含有氢氟酸化合物和氧化剂的蚀刻液施加到基材上，从而除去第一层。