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公开(公告)号：US20060282246A1
公开(公告)日：2006-12-14
申请号：US10908724
申请日：2005-05-24
申请人： Ioana Graur , Kafai Lai , Rama Singh
发明人： Ioana Graur , Kafai Lai , Rama Singh
IPC分类号： G06F17/50
CPC分类号： G06F17/5068 , G06F2217/12 , Y02P90/265
摘要： A method for predicting functionality of an integrated circuit segment to be lithographically printed on a wafer. Initially there is provided a two-dimensional design of an integrated circuit, including an integrated circuit segment having critical width, and a two-dimensional printed image of the critical width integrated circuit segment is simulated. The method then includes determining a ratio of perimeters or areas of the designed critical width integrated circuit segment to the simulated printed critical width integrated circuit segment, and predicting functionality of the critical width integrated circuit segment after printing based on the ratio of perimeters or areas.
摘要翻译： 一种用于预测光刻印刷在晶片上的集成电路片段的功能性的方法。 最初提供了集成电路的二维设计，包括具有临界宽度的集成电路段，并且模拟了临界宽度集成电路段的二维打印图像。 该方法然后包括确定设计的关键宽度集成电路段的周长或区域与模拟的打印临界宽度集成电路段的比率，以及基于周边或区域的比率来预测打印之后的临界宽度集成电路段的功能。
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72.发明授权公开(公告)号：US08856693B2
公开(公告)日：2014-10-07
申请号：US13606055
申请日：2012-09-07
申请人： Joy Cheng , Kafai Lai , Wai-Kin Li , Young-Hye Na , Jed Walter Pitera , Charles Thomas Rettner , Daniel Paul Sanders , Da Yang
发明人： Joy Cheng , Kafai Lai , Wai-Kin Li , Young-Hye Na , Jed Walter Pitera , Charles Thomas Rettner , Daniel Paul Sanders , Da Yang
CPC分类号： G03F1/38 , B82Y10/00 , B82Y40/00 , G03F1/00 , G03F7/0002
摘要： A method and a computer system for designing an optical photomask for forming a prepattern opening in a photoresist layer on a substrate wherein the photoresist layer and the prepattern opening are coated with a self-assembly material that undergoes directed self-assembly to form a directed self-assembly pattern. The methods includes: generating a mask design shape from a target design shape; generating a sub-resolution assist feature design shape based on the mask design shape; using a computer to generate a prepattern shape based on the sub-resolution assist feature design shape; and using a computer to evaluate if a directed self-assembly pattern of the self-assembly material based on the prepattern shape is within specified ranges of dimensional and positional targets of the target design shape on the substrate.
摘要翻译： 一种用于设计光学掩模的方法和计算机系统，用于在基底上的光致抗蚀剂层中形成预模式开口，其中光致抗蚀剂层和预图案开口用自组装材料涂覆，所述自组装材料经过定向自组装以形成定向自身 装配模式 所述方法包括：从目标设计形状生成掩模设计形状; 基于掩模设计形状产生子分辨率辅助特征设计形状; 使用计算机基于子分辨率辅助特征设计形状生成预绘图形状; 并且使用计算机来评估基于预图案形状的自组装材料的定向自组装图案是否在基板上的目标设计形状的尺寸和位置目标的指定范围内。
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73.发明授权公开(公告)号：US08336003B2
公开(公告)日：2012-12-18
申请号：US12708570
申请日：2010-02-19
申请人： Joy Cheng , Kafai Lai , Wai-Kin Li , Young-Hye Na , Jed Walter Pitera , Charles Thomas Rettner , Daniel Paul Sanders , Da Yang
发明人： Joy Cheng , Kafai Lai , Wai-Kin Li , Young-Hye Na , Jed Walter Pitera , Charles Thomas Rettner , Daniel Paul Sanders , Da Yang
IPC分类号： G06F17/50
CPC分类号： G03F1/38 , B82Y10/00 , B82Y40/00 , G03F1/00 , G03F7/0002
摘要： A method and a computer system for designing an optical photomask for forming a prepattern opening in a photoresist layer on a substrate wherein the photoresist layer and the prepattern opening are coated with a self-assembly material that undergoes directed self-assembly to form a directed self-assembly pattern. The methods includes: generating a mask design shape from a target design shape; generating a sub-resolution assist feature design shape based on the mask design shape; using a computer to generate a prepattern shape based on the sub-resolution assist feature design shape; and using a computer to evaluate if a directed self-assembly pattern of the self-assembly material based on the prepattern shape is within specified ranges of dimensional and positional targets of the target design shape on the substrate.
摘要翻译： 一种用于设计光学掩模的方法和计算机系统，用于在基底上的光致抗蚀剂层中形成预模式开口，其中光致抗蚀剂层和预图案开口用自组装材料涂覆，所述自组装材料经过定向自组装以形成定向自身 装配模式 所述方法包括：从目标设计形状生成掩模设计形状; 基于掩模设计形状产生子分辨率辅助特征设计形状; 使用计算机基于子分辨率辅助特征设计形状生成预绘图形状; 并且使用计算机来评估基于预图案形状的自组装材料的定向自组装图案是否在基板上的目标设计形状的尺寸和位置目标的指定范围内。
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74.发明申请公开(公告)号：US20110209106A1
公开(公告)日：2011-08-25
申请号：US12708570
申请日：2010-02-19
申请人： Joy Cheng , Kafai Lai , Wai-Kin Li , Young-Hye Na , Jed Walter Pitera , Charles Thomas Rettner , Daniel Paul Sanders , Da Yang
发明人： Joy Cheng , Kafai Lai , Wai-Kin Li , Young-Hye Na , Jed Walter Pitera , Charles Thomas Rettner , Daniel Paul Sanders , Da Yang
IPC分类号： G06F17/50
CPC分类号： G03F1/38 , B82Y10/00 , B82Y40/00 , G03F1/00 , G03F7/0002
摘要： A method and a computer system for designing an optical photomask for forming a prepattern opening in a photoresist layer on a substrate wherein the photoresist layer and the prepattern opening are coated with a self-assembly material that undergoes directed self-assembly to form a directed self-assembly pattern. The methods includes: generating a mask design shape from a target design shape; generating a sub-resolution assist feature design shape based on the mask design shape; using a computer to generate a prepattern shape based on the sub-resolution assist feature design shape; and using a computer to evaluate if a directed self-assembly pattern of the self-assembly material based on the prepattern shape is within specified ranges of dimensional and positional targets of the target design shape on the substrate.
摘要翻译： 一种用于设计光学掩模的方法和计算机系统，用于在基底上的光致抗蚀剂层中形成预模式开口，其中光致抗蚀剂层和预图案开口用自组装材料涂覆，所述自组装材料经过定向自组装以形成定向自身 装配模式 所述方法包括：从目标设计形状生成掩模设计形状; 基于掩模设计形状产生子分辨率辅助特征设计形状; 使用计算机基于子分辨率辅助特征设计形状生成预绘图形状; 并且使用计算机来评估基于预图案形状的自组装材料的定向自组装图案是否在基板上的目标设计形状的尺寸和位置目标的指定范围内。
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75.发明申请公开(公告)号：US20100294740A1
公开(公告)日：2010-11-25
申请号：US12468391
申请日：2009-05-19
申请人： Joy Cheng , Kafai Lai , Wai-Kin Li , Young-Hye Na , Charles Rettner , Daniel P. Sanders
发明人： Joy Cheng , Kafai Lai , Wai-Kin Li , Young-Hye Na , Charles Rettner , Daniel P. Sanders
CPC分类号： B81C1/00031 , B81C1/00404 , B81C2201/0149 , H01L21/0337 , H01L21/31144
摘要： An opening in a substrate is formed, e.g., using optical lithography, with the opening having sidewalls whose cross section is given by segments that are contoured and convex. The cross section of the opening may be given by overlapping circular regions, for example. The sidewalls adjoin at various points, where they define protrusions. A layer of polymer including a block copolymer is applied over the opening and the substrate, and allowed to self-assemble. Discrete, segregated domains form in the opening, which are removed to form holes, which can be transferred into the underlying substrate. The positions of these domains and their corresponding holes are directed to predetermined positions by the sidewalls and their associated protrusions. The distances separating these holes may be greater or less than what they would be if the block copolymer (and any additives) were to self-assemble in the absence of any sidewalls.
摘要翻译： 例如使用光刻法形成衬底中的开口，其中开口具有侧壁，其横截面由轮廓和凸形的部分给出。 例如，开口的横截面可以由重叠的圆形区域给出。 侧壁在各个点处相邻，在那里它们限定突起。 将包含嵌段共聚物的聚合物层施加在开口和基底上，并允许自组装。 在开口中形成离散的，分离的畴，其被去除以形成孔，其可以转移到下面的基底中。 这些区域及其对应的孔的位置通过侧壁及其相关联的突起被引导到预定位置。 分离这些孔的距离可以大于或小于如果嵌段共聚物（和任何添加剂）在没有任何侧壁的情况下自组装就会发生。
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76.发明授权公开(公告)号：US07446859B2
公开(公告)日：2008-11-04
申请号：US11307230
申请日：2006-01-27
CPC分类号： G03D3/02 , G03F7/70341 , G03F7/70716 , G03F7/70916 , H01L21/68735
摘要： An apparatus for reducing contamination in immersion lithography includes a wafer chuck assembly having a wafer chuck configured to hold a semiconductor wafer on a support surface thereof. The wafer chuck has a gap therein, the gap located adjacent an outer edge of the wafer, and the gap containing a volume of immersion lithography fluid therein. A fluid circulation path is configured within the wafer chuck so as to facilitate the radial outward movement of the immersion lithography fluid in the gap, thereby maintaining a meniscus of the immersion lithography fluid at a selected height with respect to a top surface of the semiconductor wafer.
摘要翻译： 一种用于减少浸没式光刻中的污染的装置包括晶片卡盘组件，其具有构造成将半导体晶片保持在其支撑表面上的晶片卡盘。 晶片卡盘在其中具有间隙，间隙位于晶片的外边缘附近，并且该间隙包含一定量的浸没光刻流体。 流体循环路径被配置在晶片卡盘内，以便于浸没式光刻流体在间隙中的径向向外移动，从而将浸没式光刻流体的弯月面相对于半导体晶片的顶表面保持在选定的高度 。
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公开(公告)号：US20080071512A1
公开(公告)日：2008-03-20
申请号：US11942309
申请日：2007-11-19
申请人： Ioana Graur , Kafai Lai , Rama Singh
发明人： Ioana Graur , Kafai Lai , Rama Singh
IPC分类号： G06F17/50
CPC分类号： G06F17/5068 , G06F2217/12 , Y02P90/265
摘要： A method for predicting functionality of an integrated circuit segment to be lithographically printed on a wafer. Initially there is provided a two-dimensional design of an integrated circuit, including an integrated circuit segment having critical width, and a two-dimensional printed image of the critical width integrated circuit segment is simulated. The method then includes determining a ratio of perimeters or areas of the designed critical width integrated circuit segment to the simulated printed critical width integrated circuit segment, and predicting functionality of the critical width integrated circuit segment after printing based on the ratio of perimeters or areas.
摘要翻译： 一种用于预测光刻印刷在晶片上的集成电路片段的功能性的方法。 最初提供了集成电路的二维设计，包括具有临界宽度的集成电路段，并且模拟了临界宽度集成电路段的二维打印图像。 该方法然后包括确定设计的关键宽度集成电路段的周长或区域与模拟的打印临界宽度集成电路段的比率，以及基于周边或区域的比率来预测打印之后的临界宽度集成电路段的功能。
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78.发明申请公开(公告)号：US20070188731A1
公开(公告)日：2007-08-16
申请号：US11307669
申请日：2006-02-16
申请人： Raschid Bezama , Dario Goldfarb , Kafai Lai , Xiao Liu , Dmitriy Shneyder
发明人： Raschid Bezama , Dario Goldfarb , Kafai Lai , Xiao Liu , Dmitriy Shneyder
IPC分类号： G03B27/58
CPC分类号： G03F7/70341 , G03F7/707
摘要： An apparatus for reducing contamination in immersion lithography includes a wafer chuck assembly including a wafer chuck configured to hold a semiconductor wafer on a support surface thereof. An O-ring assembly has a deformable O-ring attached to movable support sections arranged in a generally circular configuration so as to surround the wafer.
摘要翻译： 一种用于减少浸没式光刻中的污染的装置包括晶片卡盘组件，其包括构造成将半导体晶片保持在其支撑表面上的晶片卡盘。 O形环组件具有可变形的O形环，其可连接到以大致圆形构造布置的可移动支撑部分，以便围绕晶片。
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79.发明申请公开(公告)号：US20060150131A1
公开(公告)日：2006-07-06
申请号：US11029884
申请日：2005-01-05
申请人： Kafai Lai , Chieh-Yu Lin , Nayak Jawahar , Mukherjee Maharaj
发明人： Kafai Lai , Chieh-Yu Lin , Nayak Jawahar , Mukherjee Maharaj
CPC分类号： G03F1/70 , G03F1/36 , G03F1/68 , G03F7/70941
摘要： A method is described for computing distance based and pattern density based design rules for the mask layout design of a VLSI chip so that the design satisfying the above design rules when manufactured on a wafer do not violate the specified tolerance on the critical dimensions (CD). The design rules are developed on the computed enclosed energy which is a convolution of the total optical energy and the pattern density of the mask. The total optical energy is the sum of the short range diffraction limited optical energy and the long range optical flare. The method steps for generating rules for a mask layout include: selecting a mask shape from a plurality thereof inputted from the mask layout, and determining a CD of the selected mask shape and a tolerance on variations of the CD; building a physical model of a component of the energy contributed by surrounding regions at a predetermined distance from the CD; using the physical model, computing the energy enclosed within the surrounding regions at the predetermined distance, and the maximum pattern density there of while remaining within the tolerance on variations of the CD; and outputting the maximum pattern density as a rule for the surrounding region at that distance.
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