公开(公告)号：US20070018264A1

公开(公告)日：2007-01-25

申请号：US11210996

申请日：2005-08-24

申请人： Howard Rhodes ,  Hidetoshi Nozaki ,  Sohei Manabe ,  Hsin-chih Tai ,  Satyadev Nagaraja ,  Ashish Shah ,  William Qian ,  Hongli Yang ,  Tiejun Dai

发明人： Howard Rhodes ,  Hidetoshi Nozaki ,  Sohei Manabe ,  Hsin-chih Tai ,  Satyadev Nagaraja ,  Ashish Shah ,  William Qian ,  Hongli Yang ,  Tiejun Dai

IPC分类号： H01L31/0232

CPC分类号： H01L27/14689 ,  H01L27/1463 ,  H01L27/14654

摘要： An image sensor that has a pixel array using an isolation structure between pixels that reduce electrical cross-talk is disclosed. The pixel array is formed on a substrate that has a thin (less than 5 microns) epitaxial layer. The isolation structure uses a deep p-well to surround a shallow trench isolation. The deep p-well is formed using an implant energy of typically over 700 keV.

摘要翻译： 公开了一种使用减少电串扰的像素之间的隔离结构的像素阵列的图像传感器。 像素阵列形成在具有薄（小于5微米）外延层的衬底上。 隔离结构使用深p阱来围绕浅沟槽隔离。 使用典型地超过700keV的注入能量形成深p阱。

公开(公告)号：US07161130B2

公开(公告)日：2007-01-09

申请号：US11347857

申请日：2006-02-06

申请人： Sohei Manabe ,  Hidetoshi Nozaki

发明人： Sohei Manabe ,  Hidetoshi Nozaki

IPC分类号： H01L27/00

CPC分类号： H01L27/14643 ,  H01L27/14609 ,  H01L27/14632 ,  H04N5/374

摘要： A pixel sensor cell used in a CMOS image sensor is disclosed. The cell includes a pinned photodiode formed in a Pwell that is formed in an N-type semiconductor substrate. A transfer transistor is placed between the pinned photodiode and an output node. A reset transistor is coupled between a high voltage rail Vdd and the output node. Finally, an output transistor with its gate coupled to the output node is provided.

摘要翻译： 公开了一种在CMOS图像传感器中使用的像素传感器单元。 电池包括形成在P型中的钉扎光电二极管，其形成在N型半导体衬底中。 传输晶体管被放置在钉扎光电二极管和输出节点之间。 复位晶体管耦合在高电压轨V IN和输出节点之间。 最后，提供一个输出晶体管，其栅极耦合到输出节点。

公开(公告)号：US20060163684A1

公开(公告)日：2006-07-27

申请号：US11387819

申请日：2006-03-24

申请人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

发明人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

IPC分类号： H01L31/06

CPC分类号： H01L27/14621 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14685 ,  H01L31/035236 ,  Y10S257/927

摘要： The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.

公开(公告)号：US20060158538A1

公开(公告)日：2006-07-20

申请号：US11036647

申请日：2005-01-14

申请人： Howard Rhodes ,  Hidetoshi Nozaki

发明人： Howard Rhodes ,  Hidetoshi Nozaki

IPC分类号： H04N5/335

CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14643 ,  H01L31/0288

摘要： An active pixel using a transfer gate that has a polysilicon gate doped with indium. The pixel includes a photosensitive element formed in a semiconductor substrate and an n-type floating node formed in the semiconductor substrate. An n-channel transfer transistor having a transfer gate is formed between the floating node and the photosensitive element. The pixel substrate has a laterally doping gradient doped with an indium dopant.

摘要翻译： 使用具有掺杂有铟的多晶硅栅极的传输栅极的有源像素。 像素包括形成在半导体衬底中的感光元件和形成在半导体衬底中的n型浮动节点。 在浮动节点和感光元件之间形成具有传输门的n沟道传输晶体管。 像素衬底具有掺杂有铟掺杂剂的横向掺杂梯度。

公开(公告)号：US07045754B2

公开(公告)日：2006-05-16

申请号：US10816077

申请日：2004-03-30

申请人： Sohei Manabe ,  Hidetoshi Nozaki

发明人： Sohei Manabe ,  Hidetoshi Nozaki

IPC分类号： H01L27/00

CPC分类号： H01L27/14609 ,  H01L27/14643

摘要： An active pixel that incorporates elements of CCD technology into a CMOS image sensor is disclosed. Each pixel includes a reset transistor that resets a sense node. The active pixel includes an amplification transistor that is modulated by the signal on the sense node. A light sensing element, such as a photodiode, is provided and its signal is selectively read out by a transfer gate, selectively stored by a memory gate, and finally read out onto the sense node by a control gate. Underneath the memory gate is a memory well that acts as memory for the pixel and stores the signal output by the light sensing element.

摘要翻译： 公开了将CCD技术的元件结合到CMOS图像传感器中的有源像素。 每个像素包括复位感测节点的复位晶体管。 有源像素包括由感测节点上的信号调制的放大晶体管。 提供光敏元件，例如光电二极管，其信号由传输门选择性地读出，由存储器门选择性地存储，最后通过控制门读出到感测节点上。 存储器门下方是用作像素的存储器并存储由光感测元件输出的信号的存储器阱。

公开(公告)号：US06974943B2

公开(公告)日：2005-12-13

申请号：US10625411

申请日：2003-07-22

申请人： Sohei Manabe ,  Hidetoshi Nozaki

发明人： Sohei Manabe ,  Hidetoshi Nozaki

IPC分类号： H01L27/146 ,  H01L27/00

CPC分类号： H01L27/14609 ,  H01L27/14643

摘要： A active pixel sensor cell is disclosed that comprises a pinned photodiode. A transfer transistor is placed between the pinned photodiode and an output node, the transfer transistor being a depletion mode N-type MOSFET. A reset transistor is coupled between a high voltage rail Vdd and the output node. Finally, an output transistor has its gate coupled to the output node.

摘要翻译： 公开了一种有源像素传感器单元，其包括钉扎光电二极管。 传输晶体管位于钉扎光电二极管和输出节点之间，传输晶体管是耗尽型N型MOSFET。 复位晶体管耦合在高电压轨V IN和输出节点之间。 最后，输出晶体管的栅极耦合到输出节点。

公开(公告)号：US20050219884A1

公开(公告)日：2005-10-06

申请号：US10816077

申请日：2004-03-30

申请人： Sohei Manabe ,  Hidetoshi Nozaki

发明人： Sohei Manabe ,  Hidetoshi Nozaki

IPC分类号： H01L27/146 ,  H01L27/148 ,  G11C11/42 ,  G11C7/00

CPC分类号： H01L27/14609 ,  H01L27/14643

摘要： An active pixel that incorporates elements of CCD technology into a CMOS image sensor is disclosed. Each pixel includes a reset transistor that resets a sense node. The active pixel includes an amplification transistor that is modulated by the signal on the sense node. A light sensing element, such as a photodiode, is provided and its signal is selectively read out by a transfer gate, selectively stored by a memory gate, and finally read out onto the sense node by a control gate. Underneath the memory gate is a memory well that acts as memory for the pixel and stores the signal output by the light sensing element.

摘要翻译： 公开了将CCD技术的元件结合到CMOS图像传感器中的有源像素。 每个像素包括复位感测节点的复位晶体管。 有源像素包括由感测节点上的信号调制的放大晶体管。 提供光敏元件，例如光电二极管，其信号由传输门选择性地读出，由存储器门选择性地存储，最后通过控制门读出到感测节点上。 存储器门下方是用作像素的存储器并存储由光感测元件输出的信号的存储器阱。

公开(公告)号：US06344670B2

公开(公告)日：2002-02-05

申请号：US09755117

申请日：2001-01-08

申请人： Tetsuya Yamaguchi ,  Hisanori Ihara ,  Hirofumi Yamashita ,  Hidetoshi Nozaki ,  Ikuko Inoue

发明人： Tetsuya Yamaguchi ,  Hisanori Ihara ,  Hirofumi Yamashita ,  Hidetoshi Nozaki ,  Ikuko Inoue

IPC分类号： H01L31062

CPC分类号： H01L27/14601 ,  H01L27/14689

摘要： The solid-state image sensor comprises a semiconductor substrate, a plurality of photoelectric conversion sections formed within respective isolated active regions on the semiconductor substrate, an image area wherein unit cells comprising the plurality of photoelectric conversion sections and a signal scanning circuit are arranged in a two-dimensional array form, and signal lines for reading signals from the respective unit cells within the image pick-up area, wherein the respective photoelectric conversion sections being formed by at least two ion implantations.

摘要翻译： 固态图像传感器包括半导体衬底，形成在半导体衬底上的各个隔离有源区域内的多个光电转换部分，其中包括多个光电转换部分的单元电池和信号扫描电路的图像区域布置在 二维阵列形式和用于从图像拾取区域内的相应单位单元读取信号的信号线，其中各个光电转换部分由至少两个离子注入形成。

公开(公告)号：US06211509B1

公开(公告)日：2001-04-03

申请号：US09280722

申请日：1999-03-30

申请人： Ikuko Inoue ,  Nobuo Nakamura ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi ,  Hidetoshi Nozaki ,  Hisanori Ihara

发明人： Ikuko Inoue ,  Nobuo Nakamura ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi ,  Hidetoshi Nozaki ,  Hisanori Ihara

IPC分类号： H01L2700

CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14632 ,  H01L31/02325

摘要： A MOS-type solid-state image sensor has a plurality of pixel units arranged on a p-type Si substrate in a matrix format. Each pixel unit has a photoelectric conversion portion including a photodiode, and a signal extraction portion including an amplification MOS transistor. Each element isolation region for isolating the pixel units from each other has a field oxide film formed on the substrate and a p-type diffusion layer formed in the substrate layer immediately below the oxide film to have a higher carrier impurity concentration than the substrate layer. The bottom portion of each element isolation region is positioned deeper than the bottom portion of a depletion layer extending from the p-n junction of the photodiode to the substrate in an equilibrium state.

摘要翻译： MOS型固态图像传感器具有以矩阵形式布置在p型Si衬底上的多个像素单元。 每个像素单元具有包括光电二极管的光电转换部分和包括放大MOS晶体管的信号提取部分。 用于隔离像素单元的每个元件隔离区域具有形成在基板上的场氧化膜和形成在氧化膜正下方的基板层中的p型扩散层，以具有比基板层更高的载流子杂质浓度。 每个元件隔离区域的底部位于比平衡状态从光电二极管的p-n结延伸到衬底的耗尽层的底部更深的位置。

公开(公告)号：US5484658A

公开(公告)日：1996-01-16

申请号：US350144

申请日：1994-11-29

申请人： Hisanori Ihara ,  Hidetoshi Nozaki

发明人： Hisanori Ihara ,  Hidetoshi Nozaki

IPC分类号： C04B41/50 ,  C04B41/85 ,  C23C16/22 ,  C23C16/24 ,  C23C16/505 ,  H01L21/205 ,  H01L21/331 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786 ,  H01L29/861 ,  H01L31/04 ,  H01L31/20 ,  B32B17/06

CPC分类号： C04B41/009 ,  C04B41/5096 ,  C04B41/85 ,  C23C16/24 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/66242 ,  H01L29/66765 ,  H01L31/202 ,  C04B2111/00405 ,  C04B2111/00844 ,  Y02E10/50 ,  Y02P70/521 ,  Y10T428/265

摘要： A silicon thin film member according to the present invention comprises a supporting substrate and an a-Si thin film formed by plasma CVD and including hydrogen. The a-Si thin film has a distribution of hydrogen density in which a hydrogen content of the a-Si thin film has a maximum value of 1.times.10.sup.22 atoms/cm.sup.3 or more in a position 20 nm or less away from an interface between the a-Si thin film and the supporting substrate, and the maximum value of the hydrogen content is larger than a hydrogen content of the supporting substrate on the interface. The hydrogen content of the a-Si thin film decreases from the position toward the interface and decreases from the position in a direction from the supporting substrate to the a-Si thin film.